MJB44H11 (NPN),

MJB45H11 (PNP)
Preferred Devices

Complementary
Power Transistors
D2PAK for Surface Mount
http://onsemi.com
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in SILICON POWER
applications such as switching regulators, converters and power TRANSISTORS
amplifiers.
10 AMPERES,
Features 80 VOLTS, 50 WATTS
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 1.0 V (Max) @ 8.0 A MARKING
DIAGRAM
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94 V−0 @ 0.125 in D2PAK
B4xH11G
• ESD Ratings: Human Body Model, 3B > 8000 V CASE 418B
AYWW
STYLE 1
Machine Model, C > 400 V
• Pb−Free Packages are Available

MAXIMUM RATINGS x = 4 or 5
A = Assembly Location
Rating Symbol Value Unit Y = Year
Collector−Emitter Voltage VCEO 80 Vdc WW = Work Week
G = Pb−Free Package
Emitter−Base Voltage VEB 5 Vdc
Collector Current − Continuous IC 10 Adc ORDERING INFORMATION
− Peak 20

Total Power Dissipation PD Device Package Shipping †

@ TC = 25°C 50 W MJB44H11 D2PAK 50 Units/Rail
Derate above 25°C 1.67 W/°C
MJB44H11G D2PAK 50 Units/Rail
Total Power Dissipation PD (Pb−Free)
@ TA = 25°C 2.0 W
Derate above 25°C 0.016 W/°C MJB44H11T4 D2PAK 800/Tape & Reel

Operating and Storage Junction TJ, Tstg −55 to 150 °C MJB44H11T4G D2PAK 800/Tape & Reel
Temperature Range (Pb−Free)
THERMAL CHARACTERISTICS MJB45H11 D2PAK 50 Units/Rail

Characteristic Symbol Max Unit MJB45H11G D2PAK 50 Units/Rail

(Pb−Free)
Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W MJB45H11T4 D2PAK 800/Tape & Reel

Maximum ratings are those values beyond which device damage can occur. MJB45H11T4G D2PAK 800/Tape & Reel
Maximum ratings applied to the device are individual stress limit values (not (Pb−Free)
normal operating conditions) and are not valid simultaneously. If these limits are
†For information on tape and reel specifications,
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.

© Semiconductor Components Industries, LLC, 2005 1 Publication Order Number:

December, 2005 − Rev. 2 MJB44H11/D
 MJB44H11 (NPN), MJB45H11 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 30 mA, IB = 0) VCEO(sus) 80 − − Vdc

Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 mA

Emitter Cutoff Current (VEB = 5 Vdc) IEBO − − 50 mA

ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1.0 Vdc

Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc

DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) hFE 60 − − −

DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) 40 − −

DYNAMIC CHARACTERISTICS
Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) Ccb pF
MJB44H11 − 130 −
MJB45H11 − 230 −

Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) fT MHz
MJB44H11 − 50 −
MJB45H11 − 40 −

SWITCHING TIMES

Delay and Rise Times(IC = 5 Adc, IB1 = 0.5 Adc) td + tr ns

MJB44H11 − 300 −
MJB45H11 − 135 −

Storage Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) ts ns

MJB44H11 − 500 −
MJB45H11 − 500 −

Fall Time(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) tf ns

MJB44H11 − 140 −
MJB45H11 − 100 −

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL

0.3
0.2
0.2
0.1
0.1 P(pk)
ZqJC(t) = r(t) RqJC
0.07 0.05 RqJC = 1.56°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) − TC = P(pk) ZqJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 1. Thermal Response

http://onsemi.com
2
 MJB44H11 (NPN), MJB45H11 (PNP)

100 There are two limitations on the power handling ability of

50 a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMPS)

30 breakdown. Safe operating area curves indicate IC − VCE

20 1.0 ms
100 ms limits of the transistor that must be observed for reliable
10 10 ms operation; i.e., the transistor must not be subjected to greater
5.0 dissipation than the curves indicate.
3.0 The data of Figure 2 is based on T J(pk) = 150°C; TC is
2.0 TC ≤ 70° C dc variable depending on conditions. Second breakdown pulse
1.0 DUTY CYCLE ≤ 50% 1.0 ms
limits are valid for duty cycles to 10% provided T J(pk)
0.5 v 150°C. T J(pk) may be calculated from the data in
0.3 Figure 1. At high case temperatures, thermal limitations will
0.2
reduce the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Rated Forward Bias

Safe Operating Area

TA TC
PD, POWER DISSIPATION (WATTS)

3.0 60

2.0 40

TC

1.0 20 TA

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 3. Power Derating

http://onsemi.com
3
 MJB44H11 (NPN), MJB45H11 (PNP)

1000 1000
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

VCE = 4 V
VCE = 4 V
100 100

1V
VCE = 1 V
TJ = 25°C TJ = 25°C

10 10
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 4. MJB44H11 DC Current Gain Figure 5. MJB45H11 DC Current Gain

1000 1000

TJ = 125°C
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN 25°C

TJ = 125°C
−40 °C
25°C
100 100
−40 °C

VCE = 1 V
VCE = 1 V

10 10
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 6. MJB44H11 Current Gain Figure 7. MJB45H11 Current Gain

versus Temperature versus Temperature

1.2 1.2
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

1 VBE(sat) 1 VBE(sat)

0.8 0.8

0.6 0.6
IC/IB = 10 IC/IB = 10
0.4 TJ = 25°C 0.4 TJ = 25°C
VCE(sat)
0.2 VCE(sat) 0.2

0 0
0.1 1 10 0.1 1 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 8. MJB44H11 On−Voltages Figure 9. MJB45H11 On−Voltages

http://onsemi.com
4
 MJB44H11 (NPN), MJB45H11 (PNP)

PACKAGE DIMENSIONS

D2PAK 3
CASE 418B−04
ISSUE J

NOTES:
C 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
E 2. CONTROLLING DIMENSION: INCH.
V 3. 418B−01 THRU 418B−03 OBSOLETE,
−B− NEW STANDARD 418B−04.
W
4 INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.340 0.380 8.64 9.65
B 0.380 0.405 9.65 10.29
A C 0.160 0.190 4.06 4.83
S D 0.020 0.035 0.51 0.89
1 2 3
E 0.045 0.055 1.14 1.40
F 0.310 0.350 7.87 8.89
G 0.100 BSC 2.54 BSC
−T− K H 0.080 0.110 2.03 2.79
SEATING W J 0.018 0.025 0.46 0.64
PLANE K 0.090 0.110 2.29 2.79
G J
L 0.052 0.072 1.32 1.83
H M 0.280 0.320 7.11 8.13
D 3 PL N 0.197 REF 5.00 REF
P 0.079 REF 2.00 REF
0.13 (0.005) M T B M R 0.039 REF 0.99 REF
S 0.575 0.625 14.60 15.88
V 0.045 0.055 1.14 1.40

STYLE 1:
PIN 1. BASE
2. COLLECTOR
VARIABLE 3. EMITTER
CONFIGURATION 4. COLLECTOR
ZONE N P
R U
L L L

M M M

F F F

VIEW W−W VIEW W−W VIEW W−W

1 2 3

SOLDERING FOOTPRINT*

8.38
0.33

10.66 1.016
5.08
0.42 0.04
0.20

3.05
0.12
17.02
0.67 SCALE 3:1 ǒinches
mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com
5
 MJB44H11 (NPN), MJB45H11 (PNP)

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com
Literature Distribution Center for ON Semiconductor USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your
Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative.

http://onsemi.com MJB44H11/D
6