Electronic Devices and Circuits

MOS Field-Effect Transistors (MOSFETs)

Lecture 4
Small Signal Operations

Prepared By: Muhammad Abdullah

muhammad.abdullah@nu.edu.pk , uetian.09@gmail.com

National University FAST (CFD Campus)

My YouTube Channel:
https://www.youtube.com/@BlueFish506

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Transconductance of MOSFET:
The parameter that relates 𝑖˙𝑑 and 𝑣𝑔𝑠 is the MOSFET transconductance 𝑔𝑚 .
𝑖𝑑
𝑔𝑚 = = 𝑘𝑛 𝑉𝑂𝑉
𝑣𝑔𝑠

Voltage Gain:

Figure 1: Conceptual circuit to study the operation of the MOSFET as a small-signal amplifier

𝑣𝐷𝑆 = 𝑉𝐷𝐷 − 𝑅𝐷 𝑖𝐷 = 𝑉𝐷𝐷 − 𝑅𝐷 (𝐼𝐷 + 𝑖𝑑 )

𝑣𝐷𝑆 = 𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 − 𝑖𝑑 𝑅𝐷 = 𝑉𝐷𝑆 − 𝑖𝑑 𝑅𝐷
The signal component of the drain voltage is;
𝑣𝑑𝑠 = −𝑖𝑑 𝑅𝐷 = −𝑔𝑚 𝑣𝑔𝑠 𝑅𝐷
which indicates that the voltage gain is given by
𝑣𝑑𝑠
𝐴𝑣 = = −𝑔𝑚 𝑅𝐷
𝑣𝑔𝑠

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Small-Signal Equivalent-Circuit Models

From a signal point of view, the FET behaves as a voltage-controlled current source.
It accepts a signal 𝑣𝑔𝑠 between gate and source and provides a current 𝑔𝑚 𝑣𝑔𝑠 at the
drain terminal. The input resistance of this controlled source is very high-ideally,
infinite. The output resistance-that is, the resistance looking into the drain-also is
high, and we have assumed it to be infinite thus far. Small-signal equivalent circuit
is drawn as;

Figure 2: Small Signal Models of MOSFET

where
|𝑉𝐴 | 1
𝑟𝑜 = , |𝑉𝐴 | =
𝐼𝐷 𝜆
The voltage-gain expression is;
𝑣𝑑𝑠
𝐴𝑣 = = −𝑔𝑚 (𝑅𝐷 ∥ 𝑟𝑜 )
𝑣𝑔𝑠
It is important to note that the small-signal model parameters 𝑔𝑚 and 𝑟𝑜 depend on
the de bias point of the MOSFET.
The equivalent circuit models of apply to PMOS devices, except for using
|𝑉𝐺𝑆 |, |𝑉𝑡 |, |𝑉𝑂𝑉 |, and |𝑉𝐴 | and replacing 𝑘𝑛 with 𝑘𝑝 .

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Alternative Expressions for Transconductance 𝒈𝒎 :
𝑖𝑑
𝑔𝑚 = = 𝑘𝑛 𝑉𝑂𝑉
𝑣𝑔𝑠
𝑔𝑚 = 𝑘𝑛′ (𝑊/𝐿)(𝑉𝐺𝑆 − 𝑉𝑡 ) = 𝑘𝑛′ (𝑊/𝐿)𝑉𝑂𝑉
Drain current in saturation region is;
1 1 𝑊
𝐼𝐷 = 𝑘𝑛 𝑉𝑂𝑉 2 = 𝑘𝑛′ ( ) 𝑉𝑂𝑉 2
2 2 𝐿
Putting value of 𝑉𝑂𝑉 in expression of 𝑔𝑚 gives;

𝑊
𝑔𝑚 = √2𝑘𝑛′ 𝐼 = √2𝑘𝑛 𝐼𝐷
𝐿 𝐷
𝑊
Putting value of 𝑘𝑛′ ( ) in expression of 𝑔𝑚 gives;
𝐿

2𝐼𝐷 2𝐼𝐷
𝑔𝑚 = =
𝑉𝑂𝑉 𝑉𝐺𝑆 − 𝑉𝑡
There are three equations for 𝑔𝑚 ;

1. Three independent design parameters are 𝑊/𝐿, 𝑉𝑂𝑉 , and 𝐼𝐷 .

2. Designers can choose two parameters (e.g., 𝑉𝑂𝑉 and 𝐼𝐷 ), and calculate the
third (𝑊/𝐿) to achieve the desired 𝑔𝑚 .

Example 1

Figure 3 shows a discrete common source (CS) MOSFET amplifier utilizing a drain-
to-gate resistance 𝑅𝐺 for biasing purposes. The input signal 𝑣𝑖 is coupled to the gate
via a large capacitor, and the output signal at the drain is coupled to the load
resistance 𝑅𝐿 via another large capacitor. We wish to analyze this amplifier circuit to
determine its small-signal voltage gain, its input resistance, and the largest allowable
input signal. The transistor has 𝑉𝑡 = 1.5 V, 𝑘𝑛′ (𝑊/𝐿) = 0.25 mA/V 2 , and 𝑉𝐴 =

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50 V. Assume the coupling capacitors to be sufficiently large so as to act as short
circuits at the signal frequencies of interest.

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 Figure 3: (a) Amplifier Circuit (b) Circuit for determining the dc operating point (c) the
amplifier small-signal equivalent circuit (d) a simplified version of the circuit in (c)

Note:
𝑣𝑖 𝑅𝐺
𝑅𝑖𝑛 = =
𝑖𝑖 1 + 𝑔𝑚 𝑅𝐿′

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Solution:

DC Analysis:
𝑉𝐷𝑆 = 𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 = 15 − 10000𝐼𝐷
𝑉𝐺𝑆 = 𝑉𝐷𝑆 = 15 − 10000𝐼𝐷
𝑉𝑂𝑉 = 𝑉𝐺𝑆 − 𝑉𝑡 = 15 − 10000𝐼𝐷 − 1.5 = 13.5 − 10000𝐼𝐷
With 𝑉𝐷𝑆 = 𝑉𝐺𝑆 , the NMOS transistor will be operating in saturation. Thus,
1
𝐼𝐷 = 𝑘𝑛 (𝑉𝑂𝑉 )2 = 0.125𝑚(13.5 − 10000𝐼𝐷 )2
2
12500𝐼𝐷 2 − 32.75𝐼𝐷 + 0.02278125 = 0
Using quadratic formula, we get;
𝐼𝐷 = 1.06 𝑚𝐴, 1.72 𝑚𝐴
Which value of 𝐼𝐷 is correct?
For 𝐼𝐷 = 1.06 mA :
𝑉𝐺𝑆 = 𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 = 15 − 1.06𝑚 × 10𝑘 = 4.4 V
For 𝐼𝐷 = 1.72 mA :
𝑉𝐺𝑆 = 𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 = 15 − 1.72𝑚 × 10𝑘 = −2.2 V
For 𝐼𝐷 = 1.72 mA, 𝑉𝐺𝑆 < 𝑉𝑡 , so MOSFET is in cutoff mode.
For 𝐼𝐷 = 1.06 mA, 𝑉𝐺𝑆 ≥ 𝑉𝑡 , MOSFET is in saturation mode.
So, 𝐼𝐷 = 1.06 mA is the correct value.
𝑉𝑂𝑉 = 𝑉𝐺𝑆 − 𝑉𝑡 = 4.4 − 1.5 = 2.9 𝑉

Small Signal Parameters:

𝑔𝑚 = 𝑘𝑛 𝑉𝑂𝑉 = 0.25𝑚 × 2.9 = 0.725 mA/V
𝑉𝐴 50
𝑟𝑜 = = = 47𝑘Ω
𝐼𝐷 1.06

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Small-Signal Voltage Gain 𝑨𝒗
𝑅𝐿′ = 𝑅𝐿 ∥𝑅𝐷 ∥𝑟𝑜 = 10𝑘 ∥ 10𝑘 ∥ 47𝑘 = 4.52 𝑘Ω
𝐴𝑣 = −𝑔𝑚 𝑅𝐿′ = −0.725𝑚 × 4.52𝑘 = −3.3 V/V
Input Resistance 𝑹𝒊𝒏
𝑅𝐺 10𝑀Ω
𝑅𝑖𝑛 = = = 2.33𝑀Ω
1 + 𝑔𝑚 𝑅𝐿′ 1 + (0.725𝑚 × 4.52𝑘)

Maximum Allowable Input Signal 𝒗ˆ𝒊

Ensure 𝑣𝐷𝑆 ≥ 𝑣𝑂𝑉
𝑣𝐷𝑆,min = 𝑣𝐺𝑆,max − 𝑉𝑡
𝑉𝐷𝑆 − 𝑣𝑑𝑠 = 𝑉𝐺𝑆 + 𝑣𝑔𝑠 − 𝑉𝑡
𝑉𝐷𝑆 − |𝐴𝑣 |𝑣ˆ𝑖 = 𝑉𝐺𝑆 + 𝑣ˆ𝑖 − 𝑉𝑡
−|𝐴𝑣 |𝑣ˆ𝑖 = 𝑣ˆ𝑖 − 𝑉𝑡 As 𝑉𝐷𝑆 = 𝑉𝐺𝑆
𝑣ˆ𝑖 (1 + |𝐴𝑣 |) = 𝑉𝑡
𝑉𝑡 1.5
𝑣ˆ𝑖 = = = 0.35 V
|𝐴𝑣 | + 1 3.3 + 1

Example 2

Consider the amplifier circuit of Figure 3(a) without the load resistance 𝑅𝐿 and with
channel-length modulation neglected.
Let 𝑉𝐷𝐷 = 5 V, 𝑉𝑡 = 0.7 V, and 𝑘𝑛 = 1 mA/V 2 . Find 𝑉𝑂𝑉 , 𝐼𝐷 , 𝑅𝐷 , and 𝑅𝐺 to obtain
a voltage gain of −25 V/V and an input resistance of 0.5MΩ. What is the maximum
allowable input signal, 𝑣ˆ𝑖 ?
Solution:
Circuit is redrawn and shown in Figure 4.
The voltage gain 𝐴𝑣 is related to 𝑔𝑚 and 𝑅𝐷 :
𝐴𝑣 = −𝑔𝑚 𝑅𝐷 = −𝑘𝑛 𝑉𝑂𝑉 𝑅𝐷

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 𝐴𝑣 25
𝑅𝐷 = − =
𝑘𝑛 𝑉𝑂𝑉 𝑘𝑛 𝑉𝑂𝑉

Figure 4

The MOSFET bias equation is:

𝑉𝐷𝑆 = 𝑉𝐷𝐷 − 𝐼𝐷 𝑅𝐷 ; 𝑉𝐺𝑆 = 𝑉𝐷𝑆 = 𝑉𝑡 + 𝑉𝑂𝑉
From above two equations, we can write;
𝑉𝑡 + 𝑉𝑂𝑉 = 𝑉𝐷𝐷 − 𝑅𝐷 𝐼𝐷
1 2
Value of 𝐼𝐷 = 𝑘𝑛 𝑉𝑂𝑉 , 𝑉𝑡 and 𝑅𝐷 in above equation
2
25 1 2
0.7 + 𝑉𝑂𝑉 = 5 − ( 𝑘𝑛 𝑉𝑂𝑉 )
𝑘𝑛 𝑉𝑂𝑉 2
0.7 + 𝑉𝑂𝑉 = 5 − 12.5𝑉𝑂𝑉
0.7 + 13.5𝑉𝑂𝑉 = 5
4.3
𝑉𝑂𝑉 = = 0.319 V
13.5
Now 𝑅𝐷 is calculated as;

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 25 25
𝑅𝐷 = = = 78.5 𝑘Ω
𝑘𝑛 𝑉𝑂𝑉 1𝑚 × 0.319
Relation between 𝑅in and 𝑅𝐺 :
𝑅𝐺
𝑅𝑖𝑛 =
1 + 𝑔𝑚 𝑅𝐷
𝑅𝐺 = 𝑅𝑖𝑛 (1 + 𝑔𝑚 𝑅𝐷 ) = 0.5𝑀(1 + 25) = 13 𝑀Ω
Now drain current is calculated as;
1 2
1
𝐼𝐷 = 𝑘𝑛 𝑉𝑂𝑉 = × 1𝑚 × (0.3192 ) = 50.9 𝑢𝐴
2 2
Finally, the maximum allowable input signal 𝑣ˆ𝑖 can be found as follows:
𝑉𝑡 0.7 V
𝑣ˆ𝑖 = = = 27mV
|𝐴𝑣 | + 1 25 + 1

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Small Signal Equivalent Circuit Models for the MOSFET

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Example 3

An NMOS transistor has 𝜇𝑛 𝐶𝑜𝑥 = 60𝜇 A/V 2 , 𝑊/𝐿 = 40, 𝑉𝑡 = 1 V, and 𝑉𝐴 = 15 V.

Find 𝑔𝑚 and 𝑟𝑜 when (a) the bias voltage 𝑉𝐺𝑆 = 1.5 V, (b) the bias current 𝐼𝐷 =
0.5 mA.
Solution:

Part (a)
𝑊
𝑘𝑛 = 𝑘𝑛′ ( ) = 60𝜇 × 40 = 2.4 mA/V 2
𝐿
𝑉𝑂𝑉 = 𝑉𝐺𝑆 − 𝑉𝑡 = 1.5 − 1 = 0.5 𝑉
1 2
1
𝐼𝐷 = 𝑘𝑛 𝑉𝑂𝑉 = × 2.4𝑚 × (1.5 − 1)2 = 0.3 𝑚𝐴
2 2
2𝐼𝐷 2 × 0.3𝑚
𝑔𝑚 = = = 1.2 mA/V
𝑉𝑂𝑉 0.5
𝑉𝐴 15
𝑟𝑜 = = = 50kΩ
𝐼𝐷 0.3𝑚

Part (b)

𝑔𝑚 = √2𝑘𝑛 𝐼𝐷 = √2 × 2.4𝑚 × 0.5𝑚 = 1.55 𝑚𝐴/𝑉

𝑉𝐴 15
𝑟𝑜 = = = 30 kΩ
𝐼𝐷 0.5𝑚

Example 4

A MOSFET is to operate at 𝐼𝐷 = 0.1 mA and is to have 𝑔𝑚 = 1 mA/V. If 𝑘𝑛′ =

50𝜇 A/V 2 , find the required 𝑊/𝐿 ratio and the overdrive voltage.

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Solution:
2𝐼𝐷
𝑔𝑚 =
𝑉𝑂𝑉
2𝐼𝐷 2 × 0.1𝑚
𝑉𝑂𝑉 = = = 0.2 V
𝑔𝑚 1𝑚
1 𝑊 2
𝐼𝐷 = 𝑘𝑛′ 𝑉
2 𝐿 𝑂𝑉
𝑊 2𝐼𝐷 2 × 0.1𝑚
= ′ 2 = = 100
𝐿 𝑘𝑛 𝑉𝑂𝑉 50𝜇 × 0.22

Example 5

A PMOS transistor has 𝑉𝑡 = −1 V, 𝑘𝑝′ = 60𝜇 A/V 2 , and 𝑊/𝐿 = 16𝜇 m/0.8𝜇 m.
Find 𝐼𝐷 and 𝑔𝑚 when the device is biased at 𝑉𝐺𝑆 = −1.6 V. Also, find the value of
𝑟𝑜 if 𝜆( at 𝐿 = 1𝜇 m) = −0.04 V −1 .
Solution:
𝑊 16𝜇
𝑘𝑝 = 𝑘𝑝′ ( ) = 60𝜇 × = 4.5 𝑚 A/V 2
𝐿 0.8𝜇
|𝑉𝑂𝑉 | = |𝑉𝐺𝑆 | − |𝑉𝑡 | = 1.6 − 1 = 0.6 𝑉
1 1
𝐼𝐷 = 𝑘𝑝 (|𝑉𝑂𝑉 |)2 = × 4.5𝑚 × (0.6)2 = 0.216 𝑚𝐴
2 2
2𝐼𝐷 2 × 0.216𝑚
𝑔𝑚 = = = 0.72𝑚 A/V
|𝑉𝑂𝑉 | 0.6
|𝜆| = 0.04 V −1
1 1
𝑉𝐴′ = = = 25 V/𝜇m
|𝜆| 0.04
𝑉𝐴 = 𝑉𝐴′ × 𝐿 = 25 × 0.8 = 20 𝑉
𝑉𝐴 20
𝑟𝑜 = = = 92.6 𝑘Ω
𝐼𝐷 0.216𝑚

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