tlc272
tlc272
tlc272
1OUT
VDD
Extends Below the Negative Rail (C-Suffix,
NC
NC
NC
I-Suffix types)
D Low Noise . . . Typically 25 nV/√Hz at NC 4
3 2 1 20 19
18 NC
f = 1 kHz 1IN – 2OUT
5 17
D Output Voltage Range Includes Negative NC 6 16 NC
Rail 1IN + 7 15 2IN –
D High Input impedance . . . 1012 Ω Typ NC 8 14 NC
9 10 11 12 13
D ESD-Protection Circuitry
D
2IN +
GND
NC
NC
NC
Small-Outline Package Option Also
Available in Tape and Reel
D Designed-In Latch-Up Immunity NC – No internal connection
description
The TLC272 and TLC277 precision dual
operational amplifiers combine a wide range of DISTRIBUTION OF TLC277
input offset voltage grades with low offset voltage INPUT OFFSET VOLTAGE
30
drift, high input impedance, low noise, and speeds
473 Units Tested From 2 Wafer Lots
approaching those of general-purpose BiFET VDD = 5 V
devices. 25 TA = 25°C
P Package
These devices use Texas Instruments silicon-
Percentage of Units – %
description (continued)
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
VIOmax SMALL CHIP CERAMIC PLASTIC
TA TSSOP FORM
AT 25°C OUTLINE CARRIER DIP DIP
(PW) (Y)
(D) (FK) (JG) (P)
500 µV TLC277CD — — TLC277CP — —
2 mV TLC272BCD — — TLC272BCP — —
0°C to 70°c
5 mV TLC272ACD — — TLC272ACP — —
10mV TLC272CD — — TLC272CP TLC272CPW TLC272Y
500 µV TLC277ID — — TLC277IP — —
2 mV TLC272BID — — TLC272BIP — —
– 40°C to 85°C
5 mV TLC272AID — — TLC272AIP — —
10 mV TLC272ID — — TLC272IP — —
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC277CDR).
In general, many features associated with bipolar technology are available on LinCMOS operational amplifiers
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog
calculations, amplifier blocks, active filters, and signal buffering are easily designed with the TLC272 and
TLC277. The devices also exhibit low voltage single-supply operation, making them ideally suited for remote
and inaccessible battery-powered applications. The common-mode input voltage range includes the negative
rail.
A wide range of packaging options is available, including small-outline and chip carrier versions for high-density
system applications.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC272 and TLC277 incorporate internal ESD-protection circuits that prevent functional failures at voltages
up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling
these devices as exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55°C to 125°C.
P3 P4
R6
R1 R2 N5
IN –
P5 P6
P1 P2
IN + C1
R5
OUT
N3
N1 N2 N6 N7
N4
R3 D1 R4 D2 R7
GND
TJmax = 150°C
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± VDD
Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.3 V to VDD
Input current, II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 5 mA
output current, IO (each output) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 mA
Total current into VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA
Total current out of GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 mA
Duration of short-circuit current at (or below) 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature, TA: C suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
I suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 40°C to 85°C
M suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 55°C to 125°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Case temperature for 60 seconds: FK package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, P, or PW package . . . . . . . . . . . . 260°C
Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package . . . . . . . . . . . . . . . . . . . . 300°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.
2. Differential voltages are at IN+ with respect to IN –.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
25°C 0.1 60
IIO Input offset current (see Note 4) pA
70°C 7 300
2 5 V,
VO = 2.5 V 25V
VIC = 2.5
25°C 0.6 60
IIB Input bias current (see Note 4) pA
70°C 40 600
– 0.2 – 0.3
25°C to to V
Common mode in
Common-mode input
ut voltage range 4 4.2
VICR
(see Note 5) – 0.2
Full range to V
3.5
25°C 3.2 3.8
VOH High-level
High output
level out ut voltage VID = 100 mV, RL = 10 kΩ 0°C 3 3.8 V
70°C 3 3.8
25°C 0 50
VOL Low-level
Low level out
output
ut voltage VID = –100
100 mV, IOL = 0 0°C 0 50 mV
70°C 0 50
25°C 5 23
AVD Large-signal
Large signal differential voltage am
amplification
lification VO = 0.25 V to 2 V, RL = 10 kΩ 0°C 4 27 V/mV
70°C 4 20
25°C 65 80
CMRR Common-mode
Common mode rejection ratio VIC = VICRmin 0°C 60 84 dB
70°C 60 85
25°C 65 95
Supply-voltage
S l lt rejection
j ti ratio
ti
kSVR VDD = 5 V to 10 V, VO = 1.4 V 0°C 60 94 dB
(∆VDD /∆VIO)
70°C 60 96
25°C 1.4 3.2
VO = 2.5
2 5 V,
V VIC = 2.5
2 5 V,
V
IDD Supply
y current ((two amplifiers)) 0°C 1.6 3.6 mA
No load
70°C 1.2 2.6
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
25°C 0.1 60
IIO Input offset current (see Note 4) pA
70°C 7 300
V
VO = 5 V, VIC = 5 V
25°C 0.7 60
IIB Input bias current (see Note 4) pA
70°C 50 600
– 0.2 – 0.3
25°C to to V
Common mode in
Common-mode input
ut voltage range 9 9.2
VICR
(see Note 5) – 0.2
Full range to V
8.5
25°C 8 8.5
VOH High-level
High output
level out ut voltage VID = 100 mV, RL = 10 kΩ 0°C 7.8 8.5 V
70°C 7.8 8.4
25°C 0 50
VOL Low-level
Low level out
output
ut voltage VID = –100
100 mV, IOL = 0 0°C 0 50 mV
70°C 0 50
25°C 10 36
AVD Large-signal
Large signal differential voltage am
amplification
lification VO = 1 V to 6 V, RL = 10 kΩ 0°C 7.5 42 V/mV
70°C 7.5 32
25°C 65 85
CMRR Common-mode
Common mode rejection ratio VIC = VICRmin 0°C 60 88 dB
70°C 60 88
25°C 65 95
Supply-voltage
S l lt rejection
j ti ratio
ti
kSVR VDD = 5 V to 10 V, VO = 1.4 V 0°C 60 94 dB
(∆VDD /∆VIO)
70°C 60 96
25°C 1.9 4
VO = 5 V,
V VIC = 5 V,
V
IDD Supply
y current ((two amplifiers)) 0°C 2.3 4.4 mA
No load
70°C 1.6 3.4
† Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
25°C 0.1 60
IIO Input offset current (see Note 4) pA
85°C 24 15
2 5 V,
VO = 2.5 V 25V
VIC = 2.5
25°C 0.6 60
IIB Input bias current (see Note 4) pA
85°C 200 35
– 0.2 – 0.3
25°C to to V
Common mode in
Common-mode input
ut voltage range 4 4.2
VICR
(see Note 5) – 0.2
Full range to V
3.5
25°C 3.2 3.8
VOH High-level
High level out
output
ut voltage VID = 100 mV, RL = 10 kΩ – 40°C 3 3.8 V
85°C 3 3.8
25°C 0 50
VOL Low-level
Low level out
output
ut voltage VID = –100
100 mV, IOL = 0 – 40°C 0 50 mV
85°C 0 50
25°C 5 23
L
Large-signal
i l differential
diff ti l voltage
lt amplification
lifi ti
AVD VO = 1 V to 6 V, RL = 10 kΩ – 40°C 3.5 32 V/mV
85°C 3.5 19
25°C 65 80
CMRR Common-mode
Common mode rejection ratio VIC = VICRmin – 40°C 60 81 dB
85°C 60 86
25°C 65 95
S l lt
Supply-voltage j ti ratio
rejection ti
kSVR VDD = 5 V to 10 V, VO = 1.4 V – 40°C 60 92 dB
(∆VDD /∆VIO)
85°C 60 96
25°C 1.4 3.2
VO = 2.5
2 5 V,
V VIC = 2.5
2 5 V,
V
IDD Supply
y current ((two amplifiers)) – 40°C 1.9 4.4 mA
No load
85°C 1.1 2.4
† Full range is – 40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
25°C 0.1 60
IIO Input offset current (see Note 4) pA
85°C 26 1000
V
VO = 5 V, VIC = 5 V
25°C 0.7 60
IIB Input bias current (see Note 4) pA
85°C 220 2000
– 0.2 – 0.3
25°C to to V
Common mode in
Common-mode input
ut voltage range 9 9.2
VICR
(see Note 5) – 0.2
Full range to V
8.5
25°C 8 8.5
VOH High-level
High level out
output
ut voltage VID = 100 mV, RL = 10 kΩ – 40°C 7.8 8.5 V
85°C 7.8 8.5
25°C 0 50
VOL Low-level
Low level out
output
ut voltage VID = –100
100 mV, IOL = 0 – 40°C 0 50 mV
85°C 0 50
25°C 10 36
AVD Large-signal
Large signal differential voltage am
amplification
lification VO = 1 V to 6 V, RL = 10 kΩ – 40°C 7 46 V/mV
85°C 7 31
25°C 65 85
CMRR Common-mode
Common mode rejection ratio VIC = VICRmin – 40°C 60 87 dB
85°C 60 88
25°C 65 95
S l lt
Supply-voltage j ti ratio
rejection ti
kSVR VDD = 5 V to 10 V, VO = 1.4 V – 40°C 60 92 dB
(∆VDD /∆VIO)
85°C 60 96
25°C 1.4 4
VO = 5 V,
V VIC = 5 V,
V
IDD Supply
y current ((two amplifiers)) – 40°C 2.8 5 mA
No load
85°C 1.5 3.2
† Full range is – 40°C to 85°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
VDD VDD +
– –
VO VO
VI +
VI
+
CL RL CL RL
VDD –
2 kΩ 2 kΩ
VDD VDD +
20 Ω – –
1/2 VDD VO VO
+ +
20 Ω
20 Ω 20 Ω
VDD –
(a) SINGLE SUPPLY (b) SPLIT SUPPLY
VDD VDD +
100 Ω 100 Ω
– –
VI VI
VO VO
+ +
1/2 VDD
CL CL
VDD –
8 5
V = VIC
1 4
full-power response
Full-power response, the frequency above which the operational amplifier slew rate limits the output voltage
swing, is often specified two ways: full-linear response and full-peak response. The full-linear response is
generally measured by monitoring the distortion level of the output while increasing the frequency of a sinusoidal
input signal until the maximum frequency is found above which the output contains significant distortion. The
full-peak response is defined as the maximum output frequency, without regard to distortion, above which full
peak-to-peak output swing cannot be maintained.
Because there is no industry-wide accepted value for significant distortion, the full-peak response is specified
in this data sheet and is measured using the circuit of Figure 1. The initial setup involves the use of a sinusoidal
input to determine the maximum peak-to-peak output of the device (the amplitude of the sinusoidal wave is
increased until clipping occurs). The sinusoidal wave is then replaced with a square wave of the same
amplitude. The frequency is then increased until the maximum peak-to-peak output can no longer be maintained
(Figure 5). A square wave is used to allow a more accurate determination of the point at which the maximum
peak-to-peak output is reached.
(a) f = 1 kHz (b) BOM > f > 1 kHz (c) f = BOM (d) f > BOM
test time
Inadequate test time is a frequent problem, especially when testing CMOS devices in a high-volume,
short-test-time environment. Internal capacitances are inherently higher in CMOS than in bipolar and BiFET
devices and require longer test times than their bipolar and BiFET counterparts. The problem becomes more
pronounced with reduced supply levels and lower temperatures.
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO Input offset voltage Distribution 6, 7
αVIO Temperature coefficient of input offset voltage Distribution 8, 9
vs High-level out
output
ut current 10, 11
VOH High-level
High level out
output
ut voltage vs Su
Supply
ly voltage 12
vs Free-air temperature 13
vs Common-mode in input
ut voltage 14, 15
vs Differential input
in ut voltage 16
VOL Low level output voltage
Low-level
vs Free
Free-air
air tem
temperature
erature 17
vs Low-level output current 18, 19
vs Su
Supply
ly voltage 20
AVD Large-signal
Large signal differential voltage am
amplification
lification Free-air
vs Free temperature
air tem erature 21
vs Frequency 32, 33
IIB Input bias current vs Free-air temperature 22
IIO Input offset current vs Free-air temperature 22
VIC Common-mode input voltage vs Supply voltage 23
Supply
vs Su ly voltage 24
IDD Supply current
vs Free-air temperature 25
vs Su
Supply
ly voltage 26
SR Slew rate
vs Free-air temperature 27
Normalized slew rate vs Free-air temperature 28
VO(PP) Maximum peak-to-peak output voltage vs Frequency 29
vs Free
Free-air
air tem
temperature
erature 30
B1 Unity gain bandwidth
Unity-gain
vs Supply voltage 31
vs Su
Supply
ly voltage 34
φm Phase margin Free-air
vs Free temperature
air tem erature 35
vs Load capacitance 36
Vn Equivalent input noise voltage vs Frequency 37
Phase shift vs Frequency 32, 33
TYPICAL CHARACTERISTICS
ÌÌÌÌ
ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌ
60 60
ÌÌÌÌÌÌÌÌÌÌÌÌ
ÌÌÌÌ
ÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌ
ÌÌÌÌ
753 Amplifiers Tested From 6 Wafer Lots 753 Amplifiers Tested From 6 Wafer Lots
VDD = 5 V
ÌÌÌÌÌ ÌÌÌÌ
VDD = 10 V
50 50
TA = 25°C TA = 25°C
ÌÌÌÌÌ ÌÌÌÌ
P Package P Package
Percentage of Units – %
Percentage of Units – %
40 40
30 30
20 20
10 10
0 0
–5 –4 –3 –2 –1 0 1 2 3 4 5 –5 –4 –3 –2 –1 0 1 2 3 4 5
VIO – Input Offset Voltage – mV VIO – Input Offset Voltage – mV
Figure 6 Figure 7
ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ
60 60
324 Amplifiers Tested From 8 Wafer Lots
ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ
324 Amplifiers Tested From 8 Wafer Lots
VDD = 5 V VDD = 5 V
ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ
50 TA = 25°C to 125°C 50 TA = 25°C to 125°C
P Package P Package
ÌÌÌÌÌÌÌÌÌÌÌÌ ÌÌÌÌÌÌÌÌÌÌÌÌ
Outliers:
Percentage of Units – %
Outliers:
Percentage of Units – %
30 30
20 20
10 10
0
– 10 – 8 – 6 – 4 – 2 0 2 4 6 8 10
0
– 10 – 8 – 6 – 4 – 2 0 2 4 6 8
Á 10
αVIO – Temperature Coefficient – µV/°C αVIO – Temperature Coefficient – µV/°C
Figure 8 Figure 9
TYPICAL CHARACTERISTICS†
TA = 25°C
VDD = 5 V
3 10
VDD = 4 V
8
VDD = 10 V
2 VDD = 3 V
6
ÁÁ ÁÁ
ÁÁ ÁÁ
4
VOH
VOH
ÁÁ 0
ÁÁ 2
0
0 –2 –4 –6 –8 – 10 0 – 5 – 10 – 15 – 20 – 25 – 30 – 35 – 40
IOH – High-Level Output Current – mA IOH – High-Level Output Current – mA
NOTE A: The 3-V curve only applies to the C version.
Figure 10 Figure 11
ÌÌÌÌÌ
ÌÌÌÌ
16 VDD – 1.6
VID = 100 mV
ÌÌÌÌ
ÌÌÌÌÌ
IOH = – 5 mA
14 RL = 10 kΩ VDD – 1.7
VOH – High-Level Output Voltage – V
VID = 100 mA
TA = 25°C VDD = 5 V
12 VDD –1.8
10 VDD – 1.9
8 VDD – 2
VDD = 10 V
6 VDD –2.1
ÁÁ ÁÁ
ÁÁ ÁÁ
4 VDD – 2.2
VOH
VOH
ÁÁ 2
0
ÁÁ VDD –2.3
VDD –2.4
0 2 4 6 8 10 12 14 16 – 75 – 50 – 25 0 20 50 75 100 125
VDD – Supply Voltage – V TA – Free-Air Temperature – °C
Figure 12 Figure 13
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
IOL = 5 mA IOL = 5 mA
550
VID = – 100 mV 400
ÁÁ
ÁÁ ÁÁ
400
300
VOL
VID = – 1 V
ÁÁ ÁÁ
VOL
350
300 250
0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 9 10
VIC – Common-Mode Input Voltage – V VIC – Common-Mode Input Voltage – V
Figure 14 Figure 15
600 VDD = 5 V
500
VDD = 5 V
500
400
400
300 VDD = 10 V
ÁÁ ÁÁ
VDD = 10 V 300
200
ÁÁ ÁÁ 200
VOL
VOL
ÁÁ 100
0
ÁÁ 100
0
0 –1 – 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 – 10
– 75 – 50 – 25 0 25 50 75 100 125
VID – Differential Input Voltage – V
TA – Free-Air Temperature – °C
Figure 16 Figure 17
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
ÌÌÌÌ ÌÌÌÌÌ
ÌÌÌÌ
1.0 3.0
VID = – 1 V
ÌÌÌÌ ÌÌÌÌÌ
ÌÌÌÌ
0.9 VID = – 1 V
VIC = 0.5 V VIC = 0.5 V
VOL – Low-Level Output Voltage – V
0.4
ÁÁ ÁÁ
0.3 1.0
ÁÁ ÁÁ
VOL
VOL
0.2
ÁÁ
0.5
0.1
0 0
0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30
IOL – Low-Level Output Current – mA IOL – Low-Level Output Current – mA
NOTE A: The 3-V curve only applies to the C version.
Figure 18 Figure 19
LARGE-SIGNAL LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION DIFFERENTIAL VOLTAGE AMPLIFICATION
vs vs
SUPPLY VOLTAGE FREE-AIR TEMPERATURE
60 50
TA = – 55°C
ÌÌÌÌ
RL = 10 kΩ 45 RL = 10 kΩ
50 TA = 0°C
AVD – Large-Signal Differential
40
Voltage Amplification – V/mV
VDD = 10 V
35
40
30
ÌÌÌÌ
30 25
ÁÁ ÌÌÌÌ ÁÁ
TA = 25°C 20 VDD = 5 V
ÁÁ ÌÌÌÌÌÁÁ
20 TA = 85°C
15
AVD
AVD
ÁÁ ÁÁ
TA = 125°C
10
10
5
0 0
0 2 4 6 8 10 12 14 16 – 75 – 50 – 25 0 25 50 75 100 125
VDD – Supply Voltage – V TA – Free-Air Temperature – °C
Figure 20 Figure 21
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
COMMON-MODE
INPUT BIAS CURRENT AND INPUT OFFSET CURRENT INPUT VOLTAGE POSITIVE LIMIT
vs vs
FREE-AIR TEMPERATURE SUPPLY VOLTAGE
10000 16
I IB and I IO – Input Bias and Offset Currents – pA
VDD = 10 V
VIC = 5 V TA = 25°C
ÌÌ
1000
12
IIB
ÌÌ
100 10
ÌÌ
IIO
8
10
6
4
1
2
0.1 0
45 55 65 75 85 95 105 115 125 25 35 0 2 4 6 8 10 12 14 16
TA – Free-Air Temperature – °C VDD – Supply Voltage – V
NOTE A: The typical values of input bias current and input
offset current below 5 pA were determined mathematically.
Figure 22 Figure 23
I DD – Supply Current – mA
3
3.5
ÌÌÌÌ
3 TA = 0°C
TA = 25°C VDD = 10 V
2.5 2
2
1.5
1.5 VDD = 5 V
ÌÌÌÌ
1
1
ÌÌÌÌ
TA = 70°C
0.5
ÌÌÌÌ
0.5
TA = 125°C
0 0
0 2 4 6 8 10 12 14 16 – 75 – 50 – 25 0 25 50 75 100 125
VDD – Supply Voltage – V TA – Free-Air Temperature – °C
Figure 24 Figure 25
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
SR – Slew Rate – V/ µs
See Figure 1
VDD = 10 V
5 5 VIPP = 1 V
4 4
3 3
2 2 VDD = 5 V
VIPP = 1 V
1 1 VDD = 5 V
VIPP = 2.5 V
0 0
0 2 4 6 8 10 12 14 16 – 75 – 50 – 25 0 25 50 75 100 125
VDD – Supply Voltage – V TA – Free-Air Temperature – °C
Figure 26 Figure 27
1.5 10
AV = 1
1.4 9 VDD = 10 V
VIPP = 1 V
VDD = 10 V RL = 10 kΩ
1.3 8
CL = 20 pF
TA = 125°C
Normalized Slew Rate
1.2 7 TA = 25°C
TA = – 55°C
1.1 VDD = 5 V 6
1.0 5
VDD = 5 V
0.9 4
0.8 3
0.7 2 RL = 10 kΩ
See Figure 1
0.6 1
0.5 0
– 75 – 50 – 25 0 25 50 75 100 125 10 100 1000 10000
TA – Free-Air Temperature – °C f – Frequency – kHz
Figure 28 Figure 29
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
2.0
1.5
1.5
1.0 1.0
– 75 – 50 – 25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16
Figure 30 Figure 31
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
107
VDD = 5 V
10 6 RL = 10 kΩ
TA = 25°C
AVD – Large-Signal Differential
10 5 0°
Voltage Amplification
10 4 30°
AVD
Phase Shift
10 3 60°
10 2
Á
90°
Phase Shift
Á
AVD
101 120°
1 150°
0.1 180°
10 100 1k 10 k 100 k 1M 10 M
f – Frequency – Hz
Figure 32
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS†
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE SHIFT
vs
FREQUENCY
10 7
VDD = 10 V
10 6 RL = 10 kΩ
TA = 25°C
AVD – Large-Signal Differential
10 5 0°
Voltage Amplification
10 4 30°
Phase Shift
AVD
10 3 60°
10 2
ÁÁ
90°
Phase Shift
ÁÁ
AVD
101 120°
1 150°
0.1 180°
10 100 1k 10 k 100 k 1M 10 M
f – Frequency – Hz
Figure 33
VDD = 5 V
52°
VI = 10 mV
48° CL = 20 pF
51° See Figure 3
m – Phase Margin
m – Phase Margin
50°
46°
49°
48° 44°
φm
φm
VI = 10 mV
47° CL = 20 pF
TA = 25°C 42°
46° See Figure 3
45° 40°
0 2 4 6 8 10 12 14 16 –75 –50 –25 0 25 50 75 100 125
VDD – Supply Voltage – V TA – Free-Air Temperature – °C
Figure 34 Figure 35
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
TYPICAL CHARACTERISTICS
40°
200
35°
φm
100
30°
VN
25° 0
0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000
CL – Capacitive Load – pF f – Frequency – Hz
Figure 36 Figure 37
APPLICATION INFORMATION
single-supply operation
While the TLC272 and TLC277 perform well using dual power supplies (also called balanced or split supplies),
the design is optimized for single-supply operation. This design includes an input common-mode voltage range
that encompasses ground as well as an output voltage range that pulls down to ground. The supply voltage
range extends down to 3 V (C-suffix types), thus allowing operation with supply levels commonly available for
TTL and HCMOS; however, for maximum dynamic range, 16-V single-supply operation is recommended.
Many single-supply applications require that a voltage be applied to one input to establish a reference level that
is above ground. A resistive voltage divider is usually sufficient to establish this reference level (see Figure 38).
The low input bias current of the TLC272 and TLC277 permits the use of very large resistive values to implement
the voltage divider, thus minimizing power consumption.
The TLC272 and TLC277 work well in conjunction with digital logic; however, when powering both linear devices
and digital logic from the same power supply, the following precautions are recommended:
1. Power the linear devices from separate bypassed supply lines (see Figure 39); otherwise, the linear
device supply rails can fluctuate due to voltage drops caused by high switching currents in the digital
logic.
2. Use proper bypass techniques to reduce the probability of noise-induced errors. Single capacitive
decoupling is often adequate; however, high-frequency applications may require RC decoupling.
VDD
R4
R1
R2
VI –
VO V + V R3
+ REF DD R1 ) R3
VREF
R3 C V + (V * V ) R4 ) V
O REF I R2 REF
0.01 µF
– Power
OUT Logic Logic Logic Supply
+
– Power
OUT Logic Logic Logic Supply
+
APPLICATION INFORMATION
input characteristics
The TLC272 and TLC277 are specified with a minimum and a maximum input voltage that, if exceeded at either
input, could cause the device to malfunction. Exceeding this specified range is a common problem, especially
in single-supply operation. Note that the lower range limit includes the negative rail, while the upper range limit
is specified at VDD – 1 V at TA = 25°C and at VDD – 1.5 V at all other temperatures.
The use of the polysilicon-gate process and the careful input circuit design gives the TLC272 and TLC277 very
good input offset voltage drift characteristics relative to conventional metal-gate processes. Offset voltage drift
in CMOS devices is highly influenced by threshold voltage shifts caused by polarization of the phosphorus
dopant implanted in the oxide. Placing the phosphorus dopant in a conductor (such as a polysilicon gate)
alleviates the polarization problem, thus reducing threshold voltage shifts by more than an order of magnitude.
The offset voltage drift with time has been calculated to be typically 0.1 µV/month, including the first month of
operation.
Because of the extremely high input impedance and resulting low bias current requirements, the TLC272 and
TLC277 are well suited for low-level signal processing; however, leakage currents on printed-circuit boards and
sockets can easily exceed bias current requirements and cause a degradation in device performance. It is good
practice to include guard rings around inputs (similar to those of Figure 4 in the Parameter Measurement
Information section). These guards should be driven from a low-impedance source at the same voltage level
as the common-mode input (see Figure 40).
Unused amplifiers should be connected as grounded unity-gain followers to avoid possible oscillation.
noise performance
The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stage
differential amplifier. The low input bias current requirements of the TLC272 and TLC277 result in a very low
noise current, which is insignificant in most applications. This feature makes the devices especially favorable
over bipolar devices when using values of circuit impedance greater than 50 kΩ, since bipolar devices exhibit
greater noise currents.
– –
VI –
OUT OUT OUT
VI + +
VI
+
output characteristics
The output stage of the TLC272 and TLC277 is designed to sink and source relatively high amounts of current
(see typical characteristics). If the output is subjected to a short-circuit condition, this high current capability can
cause device damage under certain conditions. Output current capability increases with supply voltage.
All operating characteristics of the TLC272 and TLC277 are measured using a 20-pF load. The devices can
drive higher capacitive loads; however, as output load capacitance increases, the resulting response pole
occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation (see Figure 41). In many
cases, adding a small amount of resistance in series with the load capacitance alleviates the problem.
APPLICATION INFORMATION
2.5 V
–
TA = 25°C
VO f = 1 kHz
+ VIPP = 1 V
VI
CL
– 2.5 V
Although the TLC272 and TLC277 possess excellent high-level output voltage and current capability, methods
for boosting this capability are available, if needed. The simplest method involves the use of a pullup resistor
(RP) connected from the output to the positive supply rail (see Figure 42). There are two disadvantages to the
use of this circuit. First, the NMOS pulldown transistor N4 (see equivalent schematic) must sink a comparatively
large amount of current. In this circuit, N4 behaves like a linear resistor with an on resistance between
approximately 60 Ω and 180 Ω, depending on how hard the operational amplifier input is driven. With very low
values of RP, a voltage offset from 0 V at the output occurs. Second, pullup resistor RP acts as a drain load to
N4 and the gain of the operational amplifier is reduced at output voltage levels where N5 is not supplying the
output current.
APPLICATION INFORMATION
VI + IP RP
– VO
C
IF
R2
R1 IL RL
–
VO
VDD – VO
ÁÁÁÁÁÁÁÁÁ
+
Rp =
IF + IL + IP
ÁÁÁÁÁÁÁÁÁ
Ip = Pullup current required by
ÁÁÁÁÁÁÁÁÁ
the operational amplifier
(typically 500 µA)
Figure 42. Resistive Pullup to Increase VOH Figure 43. Compensation for Input Capacitance
feedback
Operational amplifier circuits almost always employ feedback, and since feedback is the first prerequisite for
oscillation, some caution is appropriate. Most oscillation problems result from driving capacitive loads
(discussed previously) and ignoring stray input capacitance. A small-value capacitor connected in parallel with
the feedback resistor is an effective remedy (see Figure 43). The value of this capacitor is optimized empirically.
latch-up
Because CMOS devices are susceptible to latch-up due to their inherent parasitic thyristors, the TLC272 and
TLC277 inputs and outputs were designed to withstand –100-mA surge currents without sustaining latch-up;
however, techniques should be used to reduce the chance of latch-up whenever possible. Internal protection
diodes should not, by design, be forward biased. Applied input and output voltage should not exceed the supply
voltage by more than 300 mV. Care should be exercised when using capacitive coupling on pulse generators.
Supply transients should be shunted by the use of decoupling capacitors (0.1 µF typical) located across the
supply rails as close to the device as possible.
The current path established if latch-up occurs is usually between the positive supply rail and ground and can
be triggered by surges on the supply lines and/or voltages on either the output or inputs that exceed the supply
voltage. Once latch-up occurs, the current flow is limited only by the impedance of the power supply and the
forward resistance of the parasitic thyristor and usually results in the destruction of the device. The chance of
latch-up occurring increases with increasing temperature and supply voltages.
APPLICATION INFORMATION
10 kΩ
10 kΩ
0.016 µF 0.016 µF
10 kΩ
–
VI
1/2 10 kΩ – 5V
TLC272 10 kΩ
+ 1/2 –
TLC272
+ 1/2
TLC272 Low Pass
+
High Pass
5 kΩ
Band Pass
R = 5 kΩ(3/d-1) (see Note A)
12 V
H.P.
VI +
5082-2835
1/2
TLC272 +
1/2
– TLC272 VO
0.5 µF N.O.
–
Mylar Reset
100 kΩ
APPLICATION INFORMATION
VI
(see Note A)
100 kΩ
1.2 kΩ 0.47 µF
4.7 kΩ
–
TL431 1 kΩ
20 kΩ 1/2 TIP31
0.1 µF
TLC272 15 Ω
+
TIS193 250 µF, +
25 V
–
VO
(see Note B)
10 kΩ
47 kΩ
0.01 µF
22 kΩ 110 Ω
NOTES: A. VI = 3.5 to 15 V
B. VO = 2 V, 0 to 1 A
VO (see Note A)
9V
0.1 µF
10 kΩ 9V
C
1/2 100 kΩ
–
TLC272
R2 1/2
10 kΩ TLC272 VO (see Note B)
+
100 kΩ
R1 47 kΩ
fO + 1
[ ]
R1
4C(R2) R3
R3
NOTES: A. VO(PP) = 8 V
B. VO(PP) = 4 V
APPLICATION INFORMATION
5V
VI – +
1/2 10 kΩ 100 kΩ
TLC277
–
–
1/2
TLC277 VO
+
10 kΩ
– R1,10 kΩ
10 kΩ 95 kΩ (see Note A)
1/2
TLC277
+
VI +
–5 V
5V
–
1/2
R R VO
TLC272
10 MΩ 10 MΩ
+
VI
2C
540 pF
1
R/2 f NOTCH + 2pRC
5 MΩ
C C
270 pF 270 pF
www.ti.com 10-Oct-2023
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TLC272ACP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272ACP Samples
TLC272ACPE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272ACP Samples
TLC272AID LIFEBUY SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272AI
TLC272AIDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272AI Samples
TLC272AIP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC272AIP Samples
TLC272BCP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272BCP Samples
TLC272BCPE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272BCP Samples
TLC272BIP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC272BIP Samples
TLC272CDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 272C Samples
TLC272CP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272CP Samples
TLC272CPE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC272CP Samples
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Oct-2023
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TLC272CPWR ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P272C Samples
TLC272CPWRG4 ACTIVE TSSOP PW 8 2000 RoHS & Green NIPDAU Level-1-260C-UNLIM 0 to 70 P272C Samples
TLC272ID LIFEBUY SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272I
TLC272IDG4 LIFEBUY SOIC D 8 75 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272I
TLC272IDR ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272I Samples
TLC272IDRG4 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 272I Samples
TLC272IP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC272IP Samples
TLC272IPE4 ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC272IP Samples
TLC277CP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type 0 to 70 TLC277CP Samples
TLC277IP ACTIVE PDIP P 8 50 RoHS & Green NIPDAU N / A for Pkg Type -40 to 85 TLC277IP Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com 10-Oct-2023
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Sep-2023
B0 W
Reel
Diameter
Cavity A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
W Overall width of the carrier tape
P1 Pitch between successive cavity centers
Sprocket Holes
Q1 Q2 Q1 Q2
Pocket Quadrants
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Sep-2023
Width (mm)
H
W
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Sep-2023
TUBE
T - Tube
height L - Tube length
W - Tube
width
Pack Materials-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com 28-Sep-2023
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
TLC277ID D SOIC 8 75 507 8 3940 4.32
TLC277IDG4 D SOIC 8 75 507 8 3940 4.32
TLC277IDG4 D SOIC 8 75 505.46 6.76 3810 4
TLC277IP P PDIP 8 50 506 13.97 11230 4.32
Pack Materials-Page 4
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
PACKAGE OUTLINE
PW0008A SCALE 2.800
TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
C
6.6 SEATING PLANE
TYP
6.2
A PIN 1 ID 0.1 C
AREA
6X 0.65
8
1
3.1 2X
2.9
NOTE 3 1.95
4
5
0.30
8X
0.19
4.5 1.2 MAX
B 0.1 C A B
4.3
NOTE 4
(0.15) TYP
SEE DETAIL A
0.25
GAGE PLANE
0.75 0.15
0 -8 0.05
0.50
DETAIL A
TYPICAL
4221848/A 02/2015
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-153, variation AA.
www.ti.com
EXAMPLE BOARD LAYOUT
PW0008A TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
8X (1.5)
8X (0.45) SYMM
(R0.05)
1 TYP
8
SYMM
6X (0.65)
5
4
(5.8)
4221848/A 02/2015
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
PW0008A TSSOP - 1.2 mm max height
SMALL OUTLINE PACKAGE
8X (1.5)
SYMM (R0.05) TYP
8X (0.45)
1
8
SYMM
6X (0.65)
5
4
(5.8)
4221848/A 02/2015
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
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