Dr.N.G.P.

Institute of Technology, Coimbatore – 48

(An Autonomous Institution)
(Approved by AICTE, New Delhi & Affiliated to Anna University, Chennai)
Recognized by UGC & Accredited by NAAC with A+ and
NBA (BME, CSE, ECE, EEE and Mechanical)

DEPARTMENT OF
ELECTRONICS AND COMMUNICATION ENGINEERING

LABORATORY MANUAL
REGULATION 2022

22UEC203 - ELECTRONIC DEVICES LABORATORY

YEAR / SEMESTER: I YEAR ECE / II SEMESTER

Prepared by
Approved by
Mr.U.Vinothkumar HoD – (ECE)
Ms.V.Bhuvaneshwari
 22UEC203 - ELECTRONIC DEVICES LABORATORY

Si. No. List of Experiments

1 PN Diode Characteristics of Silicon and Germanium Diode.

2 Rectifiers using PN Junction diode.

3 Zener Diode Characteristics and Voltage Regulator.

4 Wave shaping circuits: Clippers and clampers.

5 Input–output characteristics of BJT for CE, CB, CC configuration.

6 BJT as an Amplifier and Switch.

7 Drain and transfer characteristics of JFET.

8 Characteristics of MOSFET (enhancement and depletion).

9 Characteristics of UJT.

10 Switching characteristics of SCR.

 Dr. N.G.P. INSTITUTE OF TECHNOLOGY
COIMBATORE – 641 048
(An Autonomous Institution)

DEPARTMENT OF
ELECTRONICS AND COMMUNICATION ENGINEERING

22UEC203 - ELECTRONIC DEVICES LABORATORY

OBSERVATION BOOK

Name

Register Number

Class

Batch
 Dr. N.G.P. INSTITUTE OF TECHNOLOGY
Dr. N.G.P.-Kalapatti Road, Coimbatore – 641 048. Tamil Nadu. Ph : 0422 – 2369105

BONAFIDE CERTIFICATE
Department of

……………………………………………………………………………

Certified that this is a bonafied record of work done by

Mr./Ms.……………..………………of the ……….…year B.E. / B. Tech. /

M.E. / M. Tech. / MBA in the….………………………………….…………

Laboratory conducted in this institution, as prescribed by Anna University –

Chennai, for the ……. Semester, during the academic year 20….. / 20…...

................................ ...…….………………..…
Faculty In-Charge Head of the Department
Date:

Anna University Register No.: ..............................................................

Submitted for the Anna University Examination held on: ………….

…….…………………. ……………………..…..
Internal Examiner External Examiner
 CONTENTS

Exp. Date Name of the Experiment Page Marks Faculty Remarks

No. No. Awarded Signature if any
out of ( )

Average:
Exp. Date Name of the Experiment Page Marks Faculty Remarks
No. No. Awarded Signature if any
out of ( )

Average:

Faculty In-Charge
 Dr.N.G.P. INSTITUTE OF TECHNOLOGY, COIMBATORE

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

VISION OF THE DEPARTMENT

To develop professionally competent Electronics and Communication Engineers with

sound technical knowledge and skills for contributing global societal needs.

MISSION OF THE DEPARTMENT

The stated Vision of the Electronics and Communication Engineering Department will
be achieved by:

MD1: Facilitating the students with profound technical knowledge and quality contemporary
education through effective teaching learning process for a successful career.
MD2: Nurturing experiential learning through collaborative interaction with industry and
professional organizations.
MD3: Promoting collaborative-scientific and socially relevant research in the thrust areas of
Electronics and Communication Engineering.
MD4: Attaining professional excellence with well-equipped laboratories and industry driven
skill development programs.
MD5: Inculcating ethical, moral and healthy professional practices for societal benefits.

PROGRAM EDUCATIONAL OBJECTIVES (PEOs)

The Graduates of Electronics and Communication Engineering Program will

PEO1: Practice as successful professionals in Electronics and Communication Engineering

and allied disciplines.
PEO2: Pursue Higher education and research using appropriate techniques, skills and modern
tools for solving real world problems.
PEO3: Exhibit leadership qualities and teamwork with ethical standards for societal and
environmental well-being.

PROGRAM SPECIFIC OUTCOMES (PSOs)

After the successful completion of B.E. Program in Electronics and Communication

Engineering, the student’s will be able to
PSO 1: Apply the knowledge in the field of Electronics, Signal and Image processing, VLSI,
Networking, Communication and Embedded Systems to solve complex problems in
electronics and communication engineering.
PSO 2: Analyze and design analog, digital or mixed signal systems for the given specifications
and verify using simulation tools and development boards.
PSO 3: Function effectively as an individual or a leader of a team in multidisciplinary
environments and adapt to change in industrial scenarios
 Dr.N.G.P. INSTITUTE OF TECHNOLOGYCOIMBATORE - 48
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

PROGRAM OUTCOMES (POs)

After the successful completion of B.E. Program in Electronics and Communication, the student’s will
be able to

PO 1: Engineering Knowledge: Apply the knowledge of mathematics, science, engineering fundamentals, and
an engineering specialization to the solution of complex engineering problems.

PO 2: Problem Analysis: Identify, formulate, review literature, and analyze complex engineering problems
reaching substantiated conclusions using first principles of mathematics, natural sciences and
engineering services.

PO 3: Design / Development of solutions: Design solutions for complex engineering problems and design
system components or processes that meet the specified needs with appropriate consideration for the
public health and safety, and the cultural, societal, and environmental considerations.

PO 4: Conduct investigations of complex problems: Use research-based knowledge and research methods
including design of experiments, analysis and interpretation of data, and synthesis of the information
to provide valid conclusions.

PO 5: Modern tool usage: Create, select, and apply appropriate techniques, resources, and modern
engineering and IT tools including prediction and modeling to complex engineering activities with an
understanding of the limitations.

PO 6: The engineer and society: Apply reasoning informed by the contextual knowledge to assess societal,
health, legal and cultural issues and the consequent responsibilities relevant to the professional
engineering practice.

PO 7: Environment and sustainability: Understand the impact of the professional engineering solutions in
societal and environmental contexts, and demonstrate the knowledge of, and need for sustainable
development

PO 8: Ethics: Apply ethical principles and commit to professional ethics and responsibilities and norms of the
engineering practice.

PO 9: Individual and team work: Function effectively as an individual, and as a member or leader in diverse
teams, and in multidisciplinary settings.

PO 10: Communication: Communicate effectively in complex engineering activities with the engineering
community and with society at large, such as, being able to comprehend and write effective reports
and design documentation, make effective presentations, and give and receive clear instructions.

PO 11: Project management and finance: Demonstrate knowledge and understanding of the engineering and
management principles and apply these to one’s own work, as a member and leader in a team, to
manage projects and in multidisciplinary environments.

PO 12: Life-long learning: Recognize the need for, and have the preparation and ability to engage in
independent and life-long learning in the broadest context of technological change.

-
 Dr.N.G.P. INSTITUTE OF TECHNOLOGY, COIMBATORE - 48
DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

DO’s

 Do come to lab with proper uniform & shoes.

 Do learn the usage and know the location of the fire extinguisher, emergency power off
and emergency telephones during emergency.
 Equipment found to be faulty in any way should be reported immediately to the lab
instructor.
 Notify your instructor immediately after any injury, fire or explosion.
 If a small electrical fire occurs, try to disconnect the electrical power source, if possible.
 Pull the plug itself, not the cord attached to it.
 Disconnect any appliance that sparks and get it repaired immediately by the lab
instructor.
 Properly shut down/switch off the systems and appliances after use.
 Work areas must be left clean and tidy after use.
 Be familiar with electrical hazards associated with your workplace.
 Use extension cords only when necessary and only on a temporary basis.

DON’Ts

 Avoid bulky, Loose or trailing clothes. Avoid long loose hair. Remove metal bracelets,
rings or watch straps when working in the laboratories.
 Food beverages and other substances are strictly prohibited in the laboratory at all times.
 Avoid working with wet hands and clothing. At most care should be taken while handling
the equipment, proper indent should be made to the lab in-charge.
 Do not open any irrelevant internet sites on Lab Computers.
 Do not use a flash drive on Lab Computers.
 Do not upload, delete or alter any software on the Lab Computers.
 Don’t make any changes to the circuits or mechanical layout without first isolating the
circuits by switching off and removing connections to power supplies.
 Don’t use damaged cords, cords that become hot, or cords with exposed wiring. Inform
the instructor about damaged cords.
 Don’t roll chairs over electrical cord or wires
 Don’t use water on an electrical fire.
 SYLLABUS
L T P C Hours
22UEC203 ELECTRONIC DEVICES LABORATORY
0 0 2 1 30
Common to -
Prerequisites: -
Course objectives: This Course aims to
 Study the characteristics of PN Diode and Zener diode
 Study the applications of diodes
 Study the different configurations of BJT and its applications
 Study the different characteristics of JFET and MOSFET
 Understand the applications of devices such as UJT, LED, LDR and SCRs.

List of Experiments:
1. PN Diode Characteristics of Silicon and Germanium Diode.
2. Rectifiers using PN Junction diode.
3. Zener Diode Characteristics and Voltage Regulator.
4. Wave shaping circuits: Clippers and clampers.
5. Input–output characteristics of BJT for CE, CB, CC configuration.
6. BJT as an Amplifier and Switch.
7. Drain and transfer characteristics of JFET.
8. Characteristics of MOSFET (enhancement and depletion).
9. Characteristics of UJT.
10. Switching characteristics of SCR.

Course Outcomes:

At the end of the course students will be able to:

CO1: Experiment with PN Diode to study its characteristics.

CO2: Experiment with Zener Diode to study its characteristics.
CO3: Experiment with BJT to study its characteristics and applications
CO4: Experiment with JFET and MOSFET to study its Drain and transfer characteristics
CO5: Experiment with Special devices to study its characteristics.

Text Books:
[1] S. Salivahanan, N.Sureshkumar, A. Vallavaraj, “Electronic Devices and Circuits”, 3rd
Edition, Tata McGraw Hill Inc., 2010.
[2] Donald A Neaman, “Semiconductor Physics and Devices”, 4th Edition, Tata McGraw Hill
Inc. 2012.

Reference Books:
[1] Jacob Millman, Christos C Halkias, Satyabrata Jit, “Electronic Devices and Circuits”, 4th
Edition, Mc Graw Hill India, 2015.
[2] R.S.Sedha, “A Text Book of Applied Electronics”, 3rd Edition, S. Chand Publications, 2006.
[3] Yang, “Fundamentals of Semiconductor Devices”, 1st Edition, McGraw Hill International,
2017.
Ex. No.: Date:

P-N DIODE CHARACTERISTICS OF SILICON AND

GERMANIUM DIODE

AIM: 1. To Plot the Volt Ampere Characteristics of PN Junction Diode under Forward
and Reverse Bias Condition.
2. To find the Cut-in voltage, Static Resistance, Dynamic Resistance for
Forward & Reverse Bias

APPARATUS:

S.No. Name Range/Value Quantity

1 DC Regulated Power Supply 0 – 30 volts 1

2 Diode 1N 4001 1
3 Diode OA 82 1

4 Resistor 1KὨ 1
5 D.C Ammeters (0–100)mA,(0– Each 1
500)µA
6 D.C Volt meters (0–2)V,( 0–20)V Each 1
7 Bread Board - 1
8 connecting wires - 1 set

THEORY:

A P-N junction diode conducts only in one direction. The V-I characteristics
of the diode are curve between voltage across the diode and current flowing through
the diode. When external voltage is zero, circuit is open and the potential barrier does
not allow the current to flow. Therefore, the circuit current is zero. When P-type
(Anode) is connected to +ve terminal and n- type (cathode) is connected to –ve
terminal of the supply voltage is known as forward bias. The potential barrier is
reduced when diode is in the forward biased condition. At some forward voltage, the
potential barrier altogether eliminated and current starts flowing through the diode
and also in the circuit. Then diode is said to be in ON state. The current increases
with increasing forward voltage.

When N-type (cathode) is connected to +ve terminal and P-type (Anode) is

connected –ve terminal of the supply voltage is known as reverse bias and the
potential barrier across the junction increases. Therefore, the junction resistance
becomes very high and a very small current (reverse saturation current) flows in the
circuit. Then diode is said to be in OFF state. The reverse bias current is due to
minority charge carriers.

1
Ex. No.: Date:

CIRCUIT DIAGRAM:

A) FORWARD BIAS:

B) REVERSE BIAS:

C) MODEL GRAPH:

2
Ex. No.: Date:

OBSERVATIONS:

A) FORWARD BIAS:

S.No. Forward Forward

Voltage(Vf) Current (If(mA))

3
Ex. No.: Date:

B) REVERSE BIAS:

S.No. Reverse Reverse Current

Voltage(VR) (IR(µA))

CALCULATIONS:
Calculation of Static and Dynamic Resistance for a given diode.

IN FORWARD BIAS CONDITION:

Static Resistance, Rs =Vf/If =

Dynamic Resistance, RD =∆Vf/ ∆If =

IN REVERSE BIAS CONDITION:

Static Resistance, Rs=VR/IR=

Dynamic Resistance, RD=∆VR/ ∆IR =

Page 4
Ex. No.: Date:

PROCEDURE:
FORWARD BIAS:
1. Connect the circuit as per the circuit diagram on the bread board.
2. Switch on the Regulated Power Supply and slowly increase the source
voltage. Increase the Diode Current in steps of 2mA and note down the
corresponding voltage across the PN junction Diode under forward Bias
condition as per table given below.
3. Take the readings until a Diode Current of 30mA.
4. Repeat the same by using Ge Diode instead of Si Diode.
5. Plot the graph VF versus IF on the graph Sheet in the 1st quadrant as in Fig.
6. From the graph find out the Static & Dynamic forward Bias resistance of the
diode.
7. Observe and note down the cut in Voltage of the diode.

REVERSE BIAS:

1. Connect the Circuit as per the Circuit Diagram on the bread board.
2. Switch on the Regulated Power Supply and slowly increase the source
voltage. Increase the Diode voltage in steps of 2.0 volts and note down the
corresponding current against the Voltage under Reverse Bias condition as
per table given below.
3. Take readings until a Diode Voltage reaches 30.0V.
4. Repeat the same by using Ge Diode instead of Si Diode.
5. Plot the graph VR versus IR on the graph Sheet in the 3rd quadrant as in Fig.
6. From the graph find out the Dynamic Reverse Bias resistance of the diode.
7. Observe and note down the break down Voltage of the diode.

PRECAUTIONS:
1. Check the wires for continuity before use.
2. Keep the power supply at Zero volts before Start.
3. All the contacts must be intact.

RESULT:

Page 5
Ex. No.: Date:

VIVA QUESTIONS:
1. Define depletion region of a diode.
2. Define doping.
3. Is the V-I relationship of a diode Linear or Exponential?
4. Define cut-in voltage of a diode and specify the values for Si and Ge diodes?
5. What are the applications of a p-n diode?
6. Draw the ideal characteristics of P-N junction diode?
7. What is the diode equation?
8. Draw the circuit symbol of the Diode.
9. What is the break down voltage?
10. What is the effect of temperature on PN junction diodes?

Page 6
Ex. No.: Date:

RECTIFIERS USING P-N JUNCTION DIODE

AIM: 1. To construct the half and full wave rectifier with and without filter.
2. To find out ripple factor and percentage of regulation for half wave and full
wave rectifier.

APPARATUS:

S.No. Name Range/Value Quantity

1 Transformer 230V /6- 0 - 6V 1

2 Diode 1N4001 1
3 Capacitors 1000µf/25V Each 1
470µF /16V
4 Decade Resistance Box - 1
5 Dual Trace CRO 20MHz 1
6 Bread Board - 1
7 Connecting wires - 1 set

THEORY:
HALF WAVE RECTIFIER
In Half Wave Rectification, When AC supply is applied at the input, only
Positive Half Cycle appears across the load whereas, the negative Half Cycle is
suppressed. During positive half-cycle of the input voltage, the diode D1 is in
forward bias and conducts through the load resistor RL. Hence the current
produces an output voltage across the load resistor RL, which has the same shape
as the +ve half cycle of the input voltage.

During the negative half-cycle of the input voltage, the diode is reverse
biased and there is no current through the circuit. i.e., the voltage across RL is
zero. The net result is that only the +ve half cycle of the input voltage appears
across the load. The average value of the half wave rectified o/p voltage is the value
measured on dc voltmeter.

For practical circuits, transformer coupling is usually provided for two reasons.
1. The voltage can be stepped-up or stepped-down, as needed.
2. The ac source is electrically isolated from the rectifier.
Thus preventing shock hazards in the secondary circuit. The efficiency of the
Half Wave Rectifier is 40.6%.

THEORETICAL CALCULATIONS FOR RIPPLE FACTOR:

WITHOUT FILTER:
Vrms = Vm/2
Vm = 2Vrms
Vdc = Vm/π
Page 7
Ex. No.: Date:

Ripple factor r=√ (Vrms/ Vdc )2-1 =1.21

WITH FILTER:
Ripple factor, r = 1/ (2√3 f C R)

OBSERVATIONS:
HALF WAVE RECTIFIER:
WITHOUT FILTER V no Load Voltage Vdc=V

S.No Load resistance RL Output Ripple %of regulation

(k ohm) voltage(Vo) Factor
Vac(V) Vdc(V)

WITHFILTER V no Load Voltage Vdc=V

S.No Load resistance RL Output Ripple %of Regulation

(K ohm) voltage(Vo) Factor
Vac(V) Vdc(V)

Page 8
Ex. No.: Date:

CIRCUIT DIAGRAM:

A) HALF WAVE RECTIFIER WITH & WITHOUT FILTER:

C) MODEL WAVEFORM:

Page 9
Ex. No.: Date:

THEORY:
FULL WAVE RECTIFIER:
The circuit of a center-tapped full wave rectifier uses two diodes D1&D2. During
positive half cycle of secondary voltage (input voltage), the diode D1 is forward biased
and D2 is reverse biased. So the diode D1 conducts and current flows through load
resistor RL. During negative half cycle, diode D2 becomes forward biased and D1
reverse biased. Now, D2 conducts and current flows through the load resistor RL in
the same direction. There is a continuous current flow through the load resistor RL,
during both the half cycles and will get unidirectional current as show in the model
graph. The difference between full wave and half wave rectification is that a full wave
rectifier allows unidirectional (one way) current to the load during the entire 360
degrees of theinput signal and half-wave rectifier allows this only during one half cycle
(180 degree).

THEORETICAL CALCULATIONS:
Vrms = Vm/ √2
Vm = Vrms√2
Vdc = 2Vm/π
(i).WITHOUT FILTER:
Ripple factor, r = √ (Vrms/ Vdc )2-1 = 0.812

(ii).WITH FILTER:
Ripple factor, r = 1/ (4√3 f C RL)

OBSERVATIONS:
FULL WAVE RECTIFIER
WITHOUT FILTER V no Load Voltage Vdc=V

S.No Load resistance RL Output Ripple %of Regulation

(K ohm) voltage(Vo) Factor
Vac(V) Vdc(V)

Page
10
Ex. No.: Date:

WITH FILTER V no Load Voltage Vdc=V

S.No Load resistance RL Output Ripple %of Regulation

(K ohm) voltage(Vo) Factor
Vac(V) Vdc(V)

CIRCUIT DIAGRAM:

A) FULL WAVE RECTIFIER WITH & WITHOUT FILTER:

Page
11
Ex. No.: Date:

C) MODEL WAVEFORM:

Page
12
Ex. No.: Date:

PROCEDURE:
HALF WAVE RECTIFIER WITHOUT FILTER:
1. Connecting the circuit on bread board as per the circuit diagram
2. Connect the primary of the transformer to main supply i.e. 230V, 50Hz
3. Connect the decade resistance box and set the RL value to 100Ω
4. Connect the Multimeter at output terminals and vary the load resistance
(DRB) from 100Ω to 1KΩ and note down the Vac and Vdc as per given
tabular form
5. Disconnect load resistance ( DRB) and note down no load voltage Vdc (V
no load)
6. Connect load resistance at 1KΩ and connect Channel – II of CRO at
output terminals and CH – I of CRO at Secondary Input terminals observe
and note down the Input and Output Wave form on Graph Sheet.
7. Calculate ripple factor
8. Calculate Percentage of Regulation,

WITH FILTER:
1.Connecting the circuit as per the circuit Diagram and repeat the above
procedurefrom steps 2 to 8.
FULL WAVE RECTIFIER WITHOUT FILTER:
1. Connections are made as per the circuit diagram.
2. Connect the ac mains to the primary side of the transformer and the
secondaryside to the rectifier.
3. Measure the ac voltage at the input side of the rectifier.
4. Measure both ac and dc voltages at the output side the rectifier.
5. Find the theoretical value of the dc voltage by using the formula Vdc =
2Vm/П
6. Connect the filter capacitor across the load resistor and measure the values
of Vac and Vdc at the output.
7. The theoretical values of Ripple factors with and without capacitor are
calculated.
8. From the values of Vac and Vdc practical values of Ripple factors are
calculated. The practical values are compared with theoretical values.

WITH FILTER:
1. Connecting the circuit as per the circuit Diagram and repeat the above
procedurefrom steps 2 to 8.

PRECAUTIONS:
1. Check the wires for continuity before use.
2. Keep the power supply at Zero volts before Start.
3. All the contacts must be intact.

Page
13
Ex. No.: Date:

RESULT:

Page
14
Ex. No.: Date:

VIVA QUESTIONS:

1. What is a rectifier?
2. How Diode acts as a rectifier?
3. What is the significance of PIV? What is the condition imposed on PIV?
4. Draw the o/p wave form of half wave and full wave without filter?
5. Draw the o/p wave form half wave and full wave with filter?
6. What is meant by ripple factor? For a good filter whether ripple factor should be high
or low?
7. What is meant by regulation?
8. What is meant by time constant?
9. What happens to the o/p wave form if we increase the capacitor value?
10. What happens if we increase the capacitor value?

15
Ex. No.: Date:

ZENER DIODE CHARACTERISTICS AND VOLTAGE

REGULATOR

AIM:
1) To observe and draw the static characteristics of a Zener diode
2) To find the voltage regulation of a given Zener diode

APPARATUS:

S.No. Name Range/Value Quantity

1 Zener diode IZ 5.6 1
2 Regulated Power 0-30V 1
Supply
3 Voltmeter 0-20V 1

4 Ammeter 0-20mA 1
5 Resistor 1K ohm 1
6 Bread Board - 1
7 Connecting wires - -

THEORY:
A Zener diode is heavily doped p-n junction diode, specially made to operate in the
break down region. A p-n junction diode normally does not conduct when reverse biased. But
if the reverse bias is increased, at a particular voltage it starts conducting heavily. This voltage
is called Break down Voltage. High current through the diode can permanently damage the
device.
To avoid high current, we connect a resistor in series with Zener diode. Once the diode
starts conducting it maintains almost constant voltage across the terminals whatever may be
the current through it, i.e., it has very low dynamic resistance. It is used in voltage regulators.

16
Ex. No.: Date:

CIRCUIT DIAGRAM:

A) STATIC CHARACTERISTICS:

B) REVERSE BIAS CHARACTERISTICS:

C) VOLTAGE REGULATION:

17
Ex. No.: Date:

D) MODEL GRAPH:

LOAD REGULATION:

18
Ex. No.: Date:

OBSERVATIONS:

A) FORWARD BIAS CHARACTERISTICS:

Si.No. Applied Voltage (V) Forward Voltage (Vf) Forward Current (If(mA))

A) REVERSE BIAS CHARACTERISTICS:

Si.No. Applied Voltage (V) Forward Voltage (VR) Forward Current (IR(mA))

PROCEDURE:

A) STATIC CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. The Regulated power supply voltage is increased in steps.
3. The Forward current (lf), and the forward voltage (Vf.) are observed and then noted
in the tabular form.
4. A graph is plotted between Forward current (lf) on X-axis and the forward voltage
(Vf) on Y-axis.

B) LOAD REGULATION CHARACTERISTICS:

1. Connect the Circuit as per the Circuit Diagram on the bread board.
2. By changing the load Resistance, kept constant I/P Voltage at 5V, 10V, 15V as per
table given below. Take the readings of O/P Voltmeter (Vo=Vz).
3.Now by changing the I/P Voltage, kept constant load Resistance at 1K, 2K, 3K as
per table given below. Take the readings of O/P Voltmeter (Vo=Vz).

19
Ex. No.: Date:

LOAD REGULATION

Si.No. RL (Ω) Vi1=5V Vi2=10V Vi3=15V

Vo(V) Vo(V) Vo(V)
1 100
2 300
3 500
4 700
5 900
6 1K
7 3K
8 5K
9 7K
10 10K

LINE REGULATION:
Vi (V) RL1=1KΩ RL2=2KΩ RL3=3KΩ
Vo(V) Vo(V) Vo(V)
0
1
3
5
7
9
11
13
15
20

REGULATION CHARACTERISTICS: VNL =

S.No RL (ohms) VL (Volts) IS=(IZ+IL) (mA) % Regulation

((VNL-VL) /VL) x 100

20
Ex. No.: Date:

PRECAUTIONS:
1. The terminals of the zener diode should be properly identified
2. While determined the load regulation, load should not be immediately shorted.
3. Should be ensured that the applied voltages & currents do not exceed the ratings
of the diode.

RESULT:

21
Ex. No.: Date:

VIVA QUESTIONS:

1. What type of temp coefficient does the zener diode have?

2. If the impurity concentration is increased, how the depletion width effected?
3. Does the dynamic impendence of a zener diode vary?
4. Explain briefly about avalanche and zener breakdowns?
5. Draw the zener equivalent circuit?
6. Differentiate between line regulation & load regulation?
7. In which region zener diode can be used as a regulator?
8. How the breakdown voltage of a particular diode can be controlled?
9. What type of temperature coefficient does the Avalanche breakdown has?
10. By what type of charge carriers the current flows in zener and avalanche
breakdown diodes?
11. Define zener break down
12. Applications of zener diode
13. Explain how zener diode as voltage regulator?

22
 Ex. No.: Date:

WAVE SHAPING CIRCUITS: CLIPPERS AND CLAMPERS

AIM:

To construct and verify the output of clipper and clamper circuits.

APPARATUS REQUIRED:

S.n Components Range/specifica Quantit

o tion y
1. Resistor 4.7KΩ,100KΩ 1Each
2. Capacitor 0.1µf 1
3. Diode IN4001 1
4. AFG 1MHz 1
5. CRO 30MHz 1
6. Regulated power (0-30)V 1
supply
7. Bread Board - 1
8. Connecting Wires - 1 set

THEORY:

Clipper
The basic action of a clipper circuit is to remove certain portions of the
waveform, above or below certain levels as per the requirements. Thus the
circuits which are used to clip off unwanted portion of the waveform, without
distorting the remaining part of the waveform are called clipper circuits or
Clippers. The half wave rectifier is the best and simplest type of clipper circuit
which clips off the positive/negative portion of the input signal. The clipper
circuits are also called limiters or slicers.

Clamper
A Clamper Circuit is a circuit that adds a DC level to an AC signal. Actually,
the positive and negative peaks of the signals can be placed at desired levels
using the clamping circuits. As the DC level gets shifted, a clamper circuit is
called as a Level Shifter. Clamper circuits consist of energy storage elements
like capacitors.
23
 Ex. No.: Date:

OBSERVATIONS:

CIRCUIT DIAGRAM:

POSITIVE CLIPPER:

NEGATIVE CLIPPER:

MODEL GRAPH:

POSITIVE CLIPPER:

Input waveform Output Waveform

24
 Ex. No.: Date:

NEGATIVE CLIPPER:

Input waveform Output Waveform

PROCEDURE
Clipper
1. Connect the components and apparatus as shown in the circuit diagram.
2. Set input, sinusoidal signal of 8Vp-p and 1 kHz frequency and the reference
voltage as2V using RPS.
3. Observe the output across the diode using CRO.
4. Plot the input and output signal in a linear graph.

Clamper
1. Connect the components and apparatus as shown in the circuit diagram.
2. Set input, sinusoidal signal of 8Vp-p and 1kHz frequency
3. Observe the output across the load resistance using CRO.
4. Plot the input and output signal in a linear graph.

OBSERVATIONS

CIRCUIT DIAGRAM

POSITIVE CLAMPER

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 Ex. No.: Date:

NEGATIVE CLAMPER

MODEL GRAPH:
Positive Clamper:

Input waveform Output waveform

Negative Clamper:

Input Waveform Output Waveform

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 Ex. No.: Date:

RESULT:

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 Ex. No.: Date:

Viva Questions:

1. What is Clipper?
2. What is Clamper?
3. What is negative series clipper?
4. What is positive series clipper?
5. What is negative shunt clipper?
6. What is positive shunt clipper?
7. What is positive clamper?
8. What is negative clamper?
9. What is two- level clipper?
10. Importance of clippers and clampers.

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 Ex. No.: Date:

INPUT–OUTPUT CHARACTERISTICS OF BJT

FOR CE, CB, CC CONFIGURATION

AIM:

To plot the input- output characteristics of BJT for CE, CB, CC

configuration.
APPARATUS REQUIRED:

S.No. Components Specification Quantity

1. Transistor BC 107 Max Rating : 1
50V 1A, 3W
2. Resistors 10KΩ,100Ω 1
3. RPS (Regulated power (0-30) V 1
supply)
4. Voltmeters (0-10) V 1
(0-1) V
5. Ammeters (0-30) mA 1
(0-100)µA
6. Bread board - 1

7. Connecting wires - 1 set

THEORY:

A NPN function transistor consist of a silicon (or germanium) crystal in

which a layer of p – type silicon is sandwiched between two layers of N – type
silicon. The arrow on emitter lead specifies the direction of the current flow when
the emitter –base function is biased in the forward direction since the
conductivity of the BJT depends on both the majority and minority carriers it is
called bipolar device.
In CE configuration, Emitter is common to both the Collector and Base.
In CC configuration, Collector is common to both the Emitter and Base.
In CB configuration, Base is common to both the Collector and Emitter.

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 Ex. No.: Date:

PIN DIAGRAM OF BC107

CE CONFIGURATION:
Input Characteristics:
Voltage across Base Emitter junction VBE vs IB, where VCE is constant

Output Characteristics:
Voltage across Collector Emitter junction VCE vs IC where IB is constant.

CB CONFIGURATION:
Input Characteristics:
Voltage across Base Emitter junction VEB vs IE, where VCB is constant
Output characteristics:
Voltage across Collector Emitter junction VCB vs IC where IE is constant

CC CONFIGURATION
Input Characteristics
Voltage across Base Collector junction VBC vs IB, where VCE is constant
Output characteristics:
Voltage across Emitter Collector junction VEC vs IE where IB is constant

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CIRCUIT DIAGRAM
CE CONFIGURATION

MODEL GRAPH:

INPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

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CIRCUIT DIAGRAM:

CB CONFIGURATION:

MODEL GRAPH:

INPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

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 Ex. No.: Date:

CIRCUIT DIAGRAM:

CC CONFIGURATION:

MODEL GRAPH:

INPUT CHARACTERISTICS OUTPUT CHARACTERISTICS

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 Ex. No.: Date:

TABULATION:
CE CONFIGURATION:
INPUT CHARACTERISTICS:

VCE = V VCE = V
VBE(V) IB (µA) VBE(V) IB (µA)

OUTPUT CHARACTERISTICS:

IB = µA IB = µA
VCE(V) IC(mA) VCE(V) IC(mA)

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 Ex. No.: Date:

CB CONFIGURATION
INPUT CHARACTERISTICS:

VCB = V VCB = V
VEB(V) IE(mA) VEB(V) IE(mA)

OUTPUT CHARACTERISTICS:

IE= mA IE= mA
VCB(V) IC (mA) VCB(V) IC(mA)

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 Ex. No.: Date:

CC CONFIGURATION:

INPUT CHARACTERISTICS:

VEC = V VEC = V
VBC(V) IB((µA) VBC(V) IB (µA)

OUTPUT CHARACTERISTICS:

IB= mA IB= mA
VCE(V) IC(mA) VCE(V) IC(mA)

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 Ex. No.: Date:

PROCEDURE:
CE CONFIGURATION:
Input Characteristics:
1. Connections are made as per the circuit diagram.
2. VCE is kept constant (say 2v), VBE is varied in steps of 0.1v and the
corresponding IB values are tabulated. The above procedure is repeated for
1V etc.
3. Graph is plotted between VBE vs IB, where VCE constant.
Output Characteristics:
1. Connection are made as per the circuit diagram
2. IB is kept constant, VCE is varied in step IV the corresponding IC values
are tabulated. The above procedure is repeated for different constant
values.
3. Graph is plotted between VCE and Ic for a constant IB.
CB CONFIGURATION:
Input Characteristics:
1. Connections are made as per the circuit diagram.
2. VCB is kept constant (say 2v), VEB is varied insteps of 0.1V and the
Corresponding IE values are tabulated. The above procedure is repeated for
1V etc.
3. Graph is plotted between VEB vs IE, where VCB constant.
Output Characteristics:
1. Connection are made as per the circuit diagram
2. IE is kept constant, VCB is varied in step IV the corresponding IC values
are tabulated. The above procedure is repeated for different constant
values.
3. Graph is plotted between VCB and Ic for a constant IE.
CC CONFIGURATION
Input Characteristics:
1. Connections are made as per the circuit diagram.
2. The output voltage VEC is kept constant at 3V and the input voltage
VBC is increased from zero volts to different voltage levels. For each level
of input voltage VBC, the corresponding input current IB is noted.
3. A curve is then drawn between input current IB and input voltage VBC
at constant output voltage VEC (3V).
Output Characteristics:
1.The input current IB is kept constant at zero micro amperes and the
output voltage VEC is increased from zero volts to different voltage levels.
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 Ex. No.: Date:

2.For each level of output voltage VEC, the corresponding output current
IE is noted.
3.A curve is then drawn between output current IE and output voltage VEC
at constant input current IB (0 μA).

RESULT:

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 Ex. No.: Date:

VIVA QUESTIONS:

1. What is the range of  for the transistor?

2. Why CE configuration is preferred for amplification?
3. What is the phase relation between input and output?
4. What is the range of α for the transistor?
5. What is the relation between α and β?
6. What is EARLY effect?
7. What are the applications of CB configuration?
8. Based on which parameters do we choose a transistor for a particular
application?
9. What are the applications of CC configuration?
10.Draw the input output characteristics of CC configuration.

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 Ex. No.: Date:

BJT AS AN AMPLIFIER AND SWITCH

AIM: 1. To observe the action of a Transistor as an electronic switch and as an

amplifier.
2. To measure the voltage across the transistor when it is ON and when it
is OFF.
3. To measure the amplified output voltage and plot the frequency
response of an amplifier.

APPARATUS REQUIRED:

S.No. Apparatus Range /Value Quantity

1. Regulated D.C (0–30) Volts 1
Power supply
2. Transistor BC – 107 1
3. Resistors 4.7K Ω, 2.2K Ω Each 1
1 K Ω,10KΩ,100
KΩ
4. Capacitors 10µf 3
5. LED CQY24 1 1
6. CRO (0-30)MHz 1
7. Function Generator (0-1)MHz 1
8. Bread Board - 1
9. Connecting wires - 1 set

THEORY:
BJT as an Amplifier:
The single-stage common emitter amplifier circuit shown above uses what is
commonly called “Voltage Divider Biasing”. This type of biasing arrangement
uses two resistors as a potential divider network across the supply with their
center point supplying the required Base bias voltage to the transistor. Voltage
divider biasing is commonly used in the design of bipolar transistor amplifier
circuits. This method of biasing the transistor greatly reduces the effects of
varying Beta, ( β ) by holding the Base bias at a constant steady voltage level
allowing for best stability. The quiescent Base voltage (Vb) is determined by the
potential divider network formed by the two resistors, R1, R2 and the power
supply voltage Vcc as shown with the current flowing through both resistors.
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 Ex. No.: Date:

CIRCUIT DIAGRAM:
BJT AS AN AMPLIFIER:

MODEL GRAPH

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Ex. No.: Date:

TABULAR COLUMN:
Vi= 20mV

S.No. Frequency(Hz) Output Voltage Av in dB =

voltage Gain 20 log (Av)
Av =Vo/Vi

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 Ex. No.: Date:

THEORY:
BJT as a switch
A Transistor switch, which is used for opening or closing of a circuit that means
the transistor, is commonly used as a switch in the electronic devices only for
the low voltage applications because of its low power consumption. Transistor
work as a switch when it is in cutoff and saturation regions.

PROCEDURE:
BJT as an amplifier
1. Connect the circuit as per circuit diagram.,
2. Apply I/P Voltage of 20mV at 1KHz from the Function Generator and observe
the O/P on CRO.
3. Vary the frequency from 50 Hz to 1MHz in appropriate steps and note down
the corresponding O/P Voltage Vo in a tabular form.
4. Calculate the Voltage Gain Av = Vo/Vs and note down in the tabular form.
5. Plot the frequency (f) Vs Gain (Av) on a Semi-log Graph sheet
6. Draw a horizontal line at 0.707 times Av and note down the cut off points and
the Bandwidth is given by B.W = f2 – f1.

PROCEDURE:
BJT as a Switch
1. Construct the circuit as shown in figure.
2. Connect ‘0’ volts to the input terminals.
3. Measure the voltage across collector to Emitter(VCE), collector to base(VCB)
and base to emitter(VBE).
4. Connect ‘5’ volts to the input terminals. Measure the voltage across collector
to Emitter(VCE), collector to base(VCB) and base to emitter(VBE).
5. Observe that the LED glows when the input terminals are supplied with ‘0’volts
and the LED will not glow when the input is ‘5’ volts.

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 Ex. No.: Date:

CIRCUIT DIAGRAM:
BJT as a switch

TABULAR COLUMN:

Input VCE (V) VCB (V) VBE (V) Mode Mode of

voltage (V) ON/OFF LED

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 Ex. No.: Date:

RESULT:

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 Ex. No.: Date:

VIVA QUESTIONS:

1. In which region of the characteristics transistor acts as a switch?

2. What is the typical value of the collector current on ON state?
3. How the junctions of Transistor are biased in ON state and OFF state?

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 Ex. No.: Date:

DRAIN AND TRANSFER CHARACTERISTICS OF JFET

AIM:
To conduct an experiment on a given JFET and obtain
1) Drain characteristics
2) Transfer Characteristics.

APPARATUS REQUIRED:

S.No Name Range/Value Quantity

1 JFET BFW10 1
2 Regulated power (0-30)V 1
supply
3 Ammeter (0-20)mA
1
4 Voltmeter (0-20)V,(0-2)V 1
5 Bread Board 1
6 Connecting wires 1 set

THEORY:
The field effect transistor (FET) is made of a bar of N type material called the
SUBSTRATE with a P type junction (the gate) diffused into it. With a positive
voltage on the drain, with respect to the source, electron current flows from
source to drain through the CHANNEL. If the gate is made negative with respect
to the source, an electrostatic field is created which squeezes the channel and
reduces the current. If the gate voltage is high enough the channel will be
"pinched off" and the current will be zero. The FET is voltage controlled, unlike
the transistor which is current controlled. This device is sometimes called the
junction FET or IGFET or JFET.

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 Ex. No.: Date:

CIRCUIT DIAGRAM:

Pin assignment of JFET (BFW10):

Model Graph:

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 Ex. No.: Date:

TABULAR COLUMN

Drain Characteristics Transfer Characteristics

VGS= VGS= VDS= VDS=
VDS(V) ID(mA) VDS(V) ID(mA) VGS(V) ID(mA) VGS(V) ID(mA)

PROCEDURE:
The connections are given as per the circuit diagram.

DRAIN CHARACTERICTICS
1. Voltage VGS is kept at some fixed level.
2. The Drain to Source voltage VDS is varied and the corresponding drain current
Id is noted. The Graph was plotted between VDS on the x-axis and Id on y-axis.
3. The drain resistance (rd) was determined as rd = VDS / Id

TRANSFER CHARACTERICTICS
1. The VDS is kept at some particular value.
2. The Source voltage VGS is varied at some particular level and the
corresponding drain current Id was noted.
3. A graph was plotted between VGS and ID.
4. Transfer conductance value was determined by gm = Id / Vgs

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Ex. No.: Date:

RESULT:

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 Ex. No.: Date:

VIVA QUESTIONS:

1. Why FET is called as a Unipolar transistor?

2. What are the advantages of FET over BJT?
3. State why FET is voltage controlled device?
4. JFET operates in either Enhancement mode or Depletion mode or both. Why?
5.How electron flows through P-channel JFET?

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Ex. No.: Date:

CHARACTERISTICS OF MOSFET
(Enhancement and Depletion).

AIM:

To plot the Transfer and Drain characteristics of MOSFET

APPARATUS REQUIRED:

THEORY:
A MOSFET (Metal oxide semiconductor field effect transistor) has three
terminals called Drain, Source and Gate. MOSFET is a voltage controlled
device. It has very high input impedance and works at high switching
frequency. MOSFET’s are of two types 1) Enhancement type 2) Depletion
type.

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Ex. No.: Date:

MODEL GRAPH

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Ex. No.: Date:

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Ex. No.: Date:

PROCEDURE:
A) Transfer Characteristics:
1. Make the connections as per the circuit diagram.
2. Initially keep V1 and V2 at 0 V.
3. Switch ON the regulated power supplies. By varying V1, set VDS to
some
constant voltage say 5V.
4. Vary V2 in steps of 0.5V, and at each step note down the corresponding
values of VGS and ID. (Note: note down the value of VGS at which ID
starts
increasing as the threshold voltage).
5. Reduce V1 and V2 to zero.
6. By varying V1, set VDS to some other value say 10V.
7. Repeat step 4.
8. Plot a graph of VGS versus ID for different values of VDS.
B) Drain or Output Characteristics:
1. Make the connections as per the circuit diagram.
2. Initially keep V1 and V2 at zero volts.
3. By varying V2, set VGS to some constant voltage (must be more than
Threshold voltage).
4. By gradually increasing V1, note down the corresponding value of VDS
and
ID. (Note: Till the MOSFET jumps to conducting state, the voltmeter which
is connected across device as VDS reads approximately zero voltage.
Further
increase in voltage by V1 source cannot be read by VDS, so connect
multimeter to measure the voltage and tabulate the readings in the tabular
column).
5. Set VGS to some other value (more than threshold voltage) and repeat
step 4.
6. Plot a graph of VDS versus ID for different values of VGS.
Note: If VDS is lower than VP (pinch-off voltage) the device works in the constant
resistance region thatis linear region. If VDS is more than VP, a constant ID flows
from the device and this operating region is called constant current region

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Ex. No.: Date:

RESULT:

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 Ex. No.: Date:

VIVA QUESTIONS:
1.State the full form of MOSFET.
2.How many terminals the MOSFET consists of?
3.Describe the main advantage of the Power MOSFET over other
semiconductor devices.
4.Advantages of the MOSFET.
5.Whether the MOSFET is voltage controlled or current controlled device?

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Ex. No.: Date:

CHARACTERISTICS OF UJT

AIM:
To study and plot the characteristics of UJT and its negative resistance.

APPARATUS REQUIRED:

S.No. Name Range/Value Quantity

1 UJT 2N2646 1
2 Regulated power (0-30)V 1
supply
3 Ammeter (0-50)mA
1
4 Voltmeter (0-20)V 2
5 Resistor 1KΩ 2
6 Bread Board 1
7 Connecting wires 1 set

THEORY:
UJT is a three terminal semiconductor-switching device. As it has only one
junction (pn) and three terminal it is called so. It consists of a lightly doped n-
type silicon bar with a heavily doped p-type Material alloyed to forma p-n
rectifying junction. The ohmic carriers B1 and B2are attached to it at opposite
ends.

PROCEDURE:
1. The connections are made as per the circuit diagram.
2. VBB was kept fixed and IE was gradually increased by varying VS and
the corresponding VE readings are noted.
3. The same procedure was repeated for other values of VGS.
4. A Graph was drawn keeping VE on y-axis and IE on x-axis.

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Ex. No.: Date:

CIRCUIT DIAGRAM:

MODEL GRAPH:

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Ex. No.: Date:

TABULAR COLUMN:

S.No Vs(V) VE(V) IE(mA)

RESULT:

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Ex. No.: Date:

VIVA QUESTIONS:
1.Write the features of UJT?
2.What is the difference between UJT and FET?
3.What is a UJT?
4.What is relaxation oscillator?
5.What are the applications of UJT?
6.What is the intrinsic stand-off ratio?
7.Why does negative resistance region appears in UJT?
8.What is the doping profile of UJT?

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Ex. No.: Date:

SWITCHING CHARACTERISTICS OF SCR

AIM:
To plot the switching characteristics of SCR.

APPARATUS REQUIRED:

THEORY:
The SCR consists of four layers of semiconductor material alternatively P
type and N type. It can be brought of as an ordinary rectifier with a control
element .The control element is called GATE. The gate current determines the
anode to cathode voltage at which the device starts to conduct. It means that
gate terminal of the SCR is controlled by the applied voltage. Once switched ON
the gate has no further control. To switch the SCR the anode current has to be
reduced below a certain level called HOLDING CURRENT. The SCR can be
triggered ON with the gate or amplitude triggering, pulse triggering methods.
The terms ON & OFF are used to represent the conduction and blocking mode
of SCR respectively open circuited with the anode to cathode voltage made
large enough .In conduction state the SCR behaves as an ordinary diode. The
anode to cathode voltage at which the SCR conducts is called BREAK OVER
VOLTAGE or FORWARD BLOCKING VOLTAGE. It has great switching speed
than other devices.

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Ex. No.: Date:

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Ex. No.: Date:

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Ex. No.: Date:

PROCEDURE:

1. All the connections are made as per the circuit diagram.

2. Keep the gate current (IG) open i.e. IG = 0 mA.
3. Vary the anode to cathode supply voltage and note down the readings
of Voltage VAK (V), and Current IAK (µA)
4. Now Keep the gate current (IG) at a standard value of 10 mA i.e. IG =
10 mA
5. Again vary the anode to cathode supply voltage and note down the
corresponding readings of Voltage VAK (V), and Current IAK (mA).
6. Plot the graph by taking VAK (V) on x-axis and Current IAK (mA) on y-
axis. 7. Measure the Break-over voltage (VBO) and Holding current (IH)
of SCR from the graph.

RESULT:

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Ex. No.: Date:

VIVA QUESTIONS:

1. What is meant by Valley Point and Peak Point?

2. After triggering an SCR, the gate pulse is removed. What is the state
(ON or OFF) of the device at this condition? Justify our answer
3. Why is Peak Reverse Voltage Important?
4. What is asymmetrical SCR?
5. What is the difference between SCR and TRIAC?

66