Scribd Logo
Upload

Welcome to Scribd!

  • 13 views

    Diffusion Sum

    Uploaded by

    Jack
    The document discusses three topics: 1) Designing a carburizing heat treatment to produce 0.45% carbon at a depth of 0.2cm below the surface of a steel gear. 2) Determining if increasing the carburizing temperature from 900C to 1000C is economical based on furnace operating costs. 3) Calculating the depth at which the phosphorus concentration will be 1018 atoms/cm3 in a silicon wafer undergoing diffusion doping at 1100C for 1 hour, with an initial surface concentration of 1020 atoms/cm3.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd

    Diffusion Sum

    Uploaded by

    Jack
    13 views6 pages
    The document discusses three topics: 1) Designing a carburizing heat treatment to produce 0.45% carbon at a depth of 0.2cm below the surface of a steel gear. 2) Determining if increasing the carburizing temperature from 900C to 1000C is economical based on furnace operating costs. 3) Calculating the depth at which the phosphorus concentration will be 1018 atoms/cm3 in a silicon wafer undergoing diffusion doping at 1100C for 1 hour, with an initial surface concentration of 1020 atoms/cm3.

    Original Description:

    4t3tt

    Copyright

    © © All Rights Reserved

    Available Formats

    PPTX, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The document discusses three topics: 1) Designing a carburizing heat treatment to produce 0.45% carbon at a depth of 0.2cm below the surface of a steel gear. 2) Determining if increasing the carburizing temperature from 900C to 1000C is economical based on furnace operating costs. 3) Calculating the depth at which the phosphorus concentration will be 1018 atoms/cm3 in a silicon wafer undergoing diffusion doping at 1100C for 1 hour, with an initial surface concentration of 1020 atoms/cm3.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    13 views6 pages

    Diffusion Sum

    Uploaded by

    Jack
    The document discusses three topics: 1) Designing a carburizing heat treatment to produce 0.45% carbon at a depth of 0.2cm below the surface of a steel gear. 2) Determining if increasing the carburizing temperature from 900C to 1000C is economical based on furnace operating costs. 3) Calculating the depth at which the phosphorus concentration will be 1018 atoms/cm3 in a silicon wafer undergoing diffusion doping at 1100C for 1 hour, with an initial surface concentration of 1020 atoms/cm3.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    You are on page 1of 6

    nr4h4rh3s

    Basic sums
    The surface of a 0.1% C steel gear is to be hardened by carburizing.
    In gas carburizing, the steel gears are placed in an atmosphere that
    provides 1.2% C at the surface of the steel at a high temperature
    (Figure 5-1). Carbon then diffuses from the surface into the steel. For
    optimum properties, the steel must contain 0.45% C at a depth of 0.2
    cm below the surface. Design a carburizing heat treatment that will
    produce these optimum properties. Assume that the temperature is
    high enough (at least 900C) so that the iron has the FCC structure.

    C0 (or) initial condition = 0.1%


    Cs surface =1.2%
    C x depth =0.45% C
    We find that 10 h are required to successfully carburize a batch of
    500 steel gears at 900C, where the iron has the FCC structure. We
    find that it costs $1000 per hour to operate the carburizing furnace
    at 900C and $1500 per hour to operate the furnace at 1000C. Is it
    economical to increase the carburizing temperature to 1000C? What
    other factors must be considered?

    Devices such as transistors are made by doping semiconductors. The


    diffusion coefficient of phosphorus (P) in Si is D 6.5 * 10-13 cm2 s at a
    temperature of 1100C. Assume the source provides a surface
    concentration of 1020 atoms cm3 and the diffusion time is one hour.
    Assume that the silicon wafer initially contains no P. Calculate the
    depth at which the concentration of P will be 1018 atoms cm3. State any
    assumptions you have made while solving this problem.

    Ex 5.8 and 5.9


    End

    You might also like