TRANSISTOR - Introduction

Introduction
• Beside diodes, the most popular semiconductor devices is transistors. Eg:
Bipolar Junction Transistor (BJT)
• Transistors are often said to be the most significant invention of the 20th
Century.
• If cells are the building blocks of life, transistors are the building blocks of
the digital revolution. Without transistors, the technological wonders you
use every day -- cell phones, computers, cars -- would be vastly different,
if they existed at all.
• Transistors are more complex and can be used in many ways
• Most important feature: can amplify signals and as switch
• Amplification can make weak signal strong (make sounds louder and
signal levels greater), in general, provide function called Gain
 Who Invented the Transistor?
• In the mid 1940’s a team of scientists working for Bell Telephone Labs in
Murray Hill, New Jersey, were working to discover a device to replace the
then present vacuum tube technology. Vacuum tubes were the only
technology available at the time to amplify signals or serve as switching
devices in electronics. The problem was that they were expensive,
consumed a lot of power, gave off too much heat, and were unreliable,
causing a great deal of maintenance.
 The Transistor
• The scientists that were responsible for the 1947 invention of
the transistor were: John Bardeen, Walter Brattain, and
William Shockley. Bardeen, with a Ph.D. in mathematics and
physics from Princeton University, was a specialist in the
electron conducting properties of semiconductors. Brattain,
Ph.D., was an expert in the nature of the atomic structure of
solids at their surface level and solid-state physics. Shockley,
Ph.D., was the director of transistor research for Bell Labs.

Their original patent name for the transistor was:

“Semiconductor amplifier; Three-electrode circuit element
utilizing semi conductive materials.” In 1956, the group was
awarded the Noble Prize in Physics for their invention of the
transistor. In John Bardeen was
1977, Presidential Medal awarded Freedom.
the of
Transistor Structure
• BJT is bipolar because both holes (+) and electrons (-) will take part in the
current flow through the device
– N-type regions contains free electrons (negative carriers)
–P-type regions contains free holes (positive carriers)
• 2 types of BJT
– NPN transistor
– PNP transistor
• The transistor regions are:
– Emitter (E) – send the carriers into the base region and then on to the
collector
– Base (B) – acts as control region. It can allow none,some or many
carriers to flow
– Collector (C) – collects the carriers
Operation of Bipolar Junction Transistor

There are three operating regions of a bipolar

junction transistor:
•Active region: The region in which the transistors
operate as an amplifier.
•Saturation region: The region in which the
transistor is fully on and operates as a switch such
that collector current is equal to the saturation
current.
•Cut-off region: The region in which the transistor
is fully off and collector current is equal to zero
 PNP and NPN transistor
structure
P N
N P

P N

Ic(mA) IC(mA)
IB(µA) IB(µA)

IE(mA) IE(mA)

Arrow shows the current flows

 Transistor Construction
• A transistor has three doped regions.
• For both types, the base is a narrow region sandwiched between the larger
collector and emitter regions.

▪The emitter region is

heavily doped and its job is
to emit carriers into the
base.

▪The base region is very

thin and lightly doped.
▪Most of the current carriers
injected into the base pass
on to the collector.

▪The collector region is

moderately doped and is the
largest of all three regions.
 NPN Transistor Structure

The collector is lightly doped. N C

The base is thin and

P B
is lightly doped.

N E
The emitter is heavily doped.
 Transistor
configuration
• Transistor configuration –is a connection of transistor to get variety operation.
• 3 types of configuration:
– Common Collector.
– Common Base.
– Common Emitter
 Common-Collector Configuration
The input signal is applied to the base terminal and the output is taken
from the emitter terminal.
Collector terminal is common to the input and output of the circuit
Input – BC
Output – EC
 Common-Base Configuration
• Base terminal is a common point for input and output.
• Input – EB
• Output – CB
• Not applicable as an amplifier because the relation between input current
gain (IE) and output current gain (IC) is approximately 1
 Common-Emitter Configuration
• Emitter terminal is common for input and output circuit
• Input – BE
• Output – CE
• Mostly applied in practical amplifier circuits, since it provides good voltage,
current and power gain
NPN Transistor Bias
No current flows.
N C
The C-B junction
is reverse
P B
biased.

N E
NPN Transistor Bias

N C

The B-E junction P B

is forward biased.
N E

Current flows.
 NPN Transistor Bias
IC
Current flows
everywhere. N C

When both junctions P B

are biased.... IB
N E
Note that IB is smaller
IE
than IE or IC.
Transistor operation
 Note: when the IC
switch opens, all
currents go to zero. N C

Although IB is smaller
P B
it controls IE and IC.
IB
Gain is something small N E
controlling something large
IE
(IB is small).
 IC = 99 mA

The current gain from

base to collector C
is called 
IB = 1 mA P B

N E
 = 9I9Cm = 99
AI
1 BmA
 IC = 99 mA

Kirchhoff’s
current C
law:
IB = 1 mA P B
IE = I B + IC
N E
= 1 mA + 99

mA

= 100 mAIE = 100 mA

 IC = 99 mA

In a PNP transistor,
holes flow from C
emitter to collector.

IB = 1 mA B
Notice the PNP
bias voltages.
E

IE = 100 mA
 NPN Schematic Symbol

Collector

C
Base
BE

Emitter
Memory aid: NPN
means Not Pointing iN.
 PNP Schematic Symbol

Collector

C
Base
BE

Emitter
Memory aid: NPN
means Pointing iN Properly.
 Recall: NPN and PNP Bias

• Fundamental operation of pnp transistor and npn transistor is similar except for:
– role of electron and hole,
– voltage bias polarity, and
– Current direction
 I-V Characteristic for CE configuration : Input
• Input characteristic: input characteristic
current (IB) against input
voltage (VBE) for several output
voltage (VCE)
• From the graph
– I =0A V < 0.7V (Si)
BE
B
V > 0.7V
• – Itransistor
The B= value
BE

turned
(Si) on when
VBE = 0.7V
 I-V Characteristic for CE configuration : Output
characteristic
• Output characteristic: output
current (IC) against output
voltage (VCE) for several
input current (IB)
• 3 operating regions:
– Saturation region
– Cut-off region
– Active region
 I-V Characteristic for CE configuration :
Output characteristic
• Saturation region – in which both junctions are forward-biased and IC increase
linearly with VCE

• Cut-off region – where both junctions are reverse-biased, the IB is very

small, and essentially no IC flows, IC is essentially zero with increasing VCE

• Active region – in which the transistor can act as a linear amplifier, where
the BE junction is forward-biased and BC junction is reverse-biased. IC
increases drastically although only small changes of IB.

• Saturation and cut-off regions – areas where the transistor can operate as
a switch

• Active region – area where transistor operates as an amplifier

 Current Relationships

• Relations between IC and IE :

α = IC
IE
• Value of α usually 0.9998
• to 0.9999, α ≈ 1
Relations between IC and
IB :
β = IC @
IC =
βIB IB
• Value of β usually in range of 50 400
•• The current gain factor , α and β is:
The equation, IE =IC + IB can also written in β
α= β @ β
I = βI
=C α B .
 Simple Transistor Circuit
• Pictured below is a very simple circuit which demonstrates the use of
transistors. When a finger is placed in the circuit where shown, a tiny
current of around 0.1mA flows (assuming a finger resistance of 50,000
Ohms). This is nowhere near enough to light the LED which needs at least
10mA. However the tiny current is applied to the Base of the transistor
where it is boosted by a factor (gain) of around 100 times and the LED
lights!
 Checking a Transistor with an Ohmmeter

▪An analog ohmmeter can be used to check a transistor because the

emitter-base and collector-base junctions are p-n junctions.
▪This is illustrated in Fig. where the npn transistor is replaced by its
diode equivalent circuit.