Datasheet

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Sanken Power Devices

from Allegro MicroSystems
STR-A6252M
Universal-Input 20 W 67 kHz
Flyback Switching Regulators
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Package DIP-8
Approximate Scale 1:1
FEATURES AND BENEFITS

67 kHz PWM with 5% frequency jittering for EMI noise
filtering and cost reduction
Rugged 650 V avalanche-rated MOSFET:
Simplified surge absorption
No VDSS derating required
Low RDS(on) : 2.8 maximum
Auto-burst mode for stand-by operation or light loads; less
transformer audible noise
Built-in leading edge blanking
Soft start and low start-up current; start-up circuit disabled in
The STR-A6252M is a 67 kHz PWM topology (with 5%

frequency jittering for minimum EMI) regulator specifically
designed to satisfy the requirements for increased integration and
reliability in flyback converters. It incorporates a primary control
and drive circuit with an avalanche-rated power MOSFET. This
is a higher-frequency version of the STR-A6252.
Covering the power range from below 24 watts for a
230 VAC input, or to 20 watts for a universal (85 to 264 VAC)
input, this device can be used in a wide range of applications,
from DVD players and VCR player/recorders to ac adapters
for cellular phones and digital cameras. An auto-burst standby
function reduces power consumption at light load, while multiple
protections, including the avalanche-energy guaranteed MOSFET,
provide high reliability of system design.
Cycle-by-cycle current limiting, undervoltage lockout with
hysteresis, overvoltage protection, and thermal shutdown protect
the power supply during the normal overload and fault conditions.
Overvoltage protection and thermal shutdown are latched after a
short delay. The latch may be reset by cycling the input supply.
Low start-up current and a low-power standby mode selected
from the secondary circuit completes a comprehensive suite of
features.
It is provided in an 8-pin mini-DIP plastic package with pin
6 removed. The leadframe plating is pure Sb, and the package
complies with RoHS.
operation
Auto-burst stand-by (intermittent operation) input power
<0.1 W at no load
Built-in constant-voltage/constant current (CV/CC)
Multiple protections:
Pulse-by-pulse overcurrent protection (OCP)
Overload protection (OLP) with auto restart
Latching overvoltage protection (OVP)
Undervoltage lockout (UVLO) with hysteresis
Latching thermal shutdown (TSD)
All performance characteristics given are typical values for circuit or

system baseline design only and are at the nominal operating voltage and
an ambient temperature of +25C, unless otherwise stated.
Datasheet 28103.44-5a
Always order by complete part number, e.g.:
STR-A6252M
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FUNCTIONAL BLOCK DIAGRAM AND TERMINAL ASSIGNMENTS
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Vcc
RESET
OVP
Internal
BIAS
7.2V
32V
Delay
TSD
Istartup
=1.1mA
UVLO
S/OCP
FB/CC
/OLP
GND
13.4V/10V
S Q
10 s
125C
Drive
RQ
PWM OSC
CV/CC
Feedback
Control
Soft Start
FM/SS 2
OLP
OCP
LEB
Frequency
Modulation
Number
Name
S/OCP
Source/OCP terminal
MOSFET Source/Overcurrent
protection
FM/SS
FM/Soft start terminal
Capacitor connection terminal for

frequency jitter and soft start.
GND
Ground terminal
Ground
FB /CC/OLP
FB/CC/OLP terminal
Input of constant voltage control

signal / constant current operation
control signal / over load protection
signal
VCC
Power supply terminal
Input of power supply for control

circuit
Drain terminals
MOSFET drain / Input of startup

current
7
8
Description
Functions
115 Northeast Cutoff, Box 15036

Worcester, Massachusetts 01615-0036
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ABSOLUTE MAXIMUM RATINGS at TA = 25C
Characteristic
Symbol
Terminal
Max.
Unit
IDpeak
8-1
Single Pulse
3.0
IDMAX
8-1
VS/OCP = 0.81 V with reference to GND,

TA = 20 to 125C
3.0
Single Pulse Avalanche Energy2
EAS
8-1
Single Pulse
123
mJ
VDD = 99 V, L = 20 mH, IL = 3.0 A
123
mJ
S/OCP Terminal Voltage
VOCP
1-3
0.3 to 6
Controller (MIC) Input Voltage
Vcc
5-3
36
FB/CC/OLP Terminal Voltage
VFB
4-3
0.3 to 12
FM Terminal Voltage
VFM
2-3
0.3 to 6
MOSFET Power Dissipation3,4
PD1
8-1
1.35
Controller (MIC) Power Dissipation5
PD2
5-3
For VccIcc
0.15
Refer to TOP
Drain Current1
Maximum Switching Current
Operating Internal Frame
Temperature6
TF
Note
20 to 125
Operating Ambient Temperature
Top
20 to 125
Storage Temperature
Tstg
40 to 125
Channel Junction Temperature
TJ
150
1Refer
to figure 1
2Refer to figure 3
3Refer to figure 5
4Mounted on 15 x 15 mm printed circuit board
5Refer to figure 6
6Measured at the root of terminal 3
Figure 1 MOSFET Safe Operating Area

Derating Curve
10.00
100
ms
40
60
it
im n)
t l S(o
n
D
re R
ur to
C ue
d
1.00
Drain Current, ID (A)
0.1
80
1
Safe Operating Area

Temperature Derating Coefficient (%)
Figure 2 MOSFET Safe Operating Area

Drain Current versus Voltage
0.10
20
Refer to figure 1 for MOSFET SOA
temperature derating coefficient
0.01
0
0
25
50
75
100
125
150
10
100
1000
Drain-to-Source Voltage, VDS (V)
Temperature, TF (C)

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Figure 3 MOSFET Avalanche Energy Derating Curve

Transient Thermal Resistance, RJC (C/W)
80
EAS Derating Coefficient (%)
Figure 4 Transient Thermal Resistance

10.00
100
60
40
20
1.00
0.10
0.01
0
25
50
75
100
125
150
10
100
Channel Junction Temperature, TJ (C)
Figure 5 MOSFET Power Dissipation versus Temperature
10m
100m
Figure 6 MIC Power Dissipation versus Temperature
1.6
1.6
1.4
1.4
1.2
Power Dissipation, PD2 (W)
Power Dissipation, PD1 (W)
1m
t (s)
PD1 = 1.35 W at TA &

1.0
0.8
0.6
0.4
1.2
1.0
0.8
0.6
0.4
PD2 = 0.15 W at TA &
0.2
0.2
0
0
20
40
60
80
100
120
140
160
20
Ambient Temperature, TA (C)
40
60
80
100
120
140
160
Internal Frame Temperature, TF (C)

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ELECTRICAL CHARACTERISTICS for Controller (MIC), valid at TA = 25C, VCC = 18 V, unless otherwise specified
Characteristic
Symbol
Terminal
Test Conditions
Min.
Typ.
Max.
Unit
12.9
14.3
15.7
Operation Start Voltage
VCC(ON)
5-3
(Power supply voltage at which device starts operating)

Measurement circuit 1, VCC = 0 through 12.9 to 15.7 V
Operation Stop Voltage
VCC(OFF)
5-3
(Power supply voltage at which device stops operating)

Measurement circuit 1, VCC = 15.7 through 9 to 11 V
10
11
Circuit Current In Operation
ICC(ON)
5-3
(Inflow current into power supply terminal, in operation)

Measurement circuit 1
mA
Initialization Circuit Current
ICC(OFF)
5-3
(Inflow current into power supply terminal,, while subject to

UVLO prior to operation)
Measurement circuit 1, VCC = 12 V
25
Center Switching Frequency
fosc(av)
8-3
(Center oscillation frequency of D terminal)

60
67
74
KHz
8-3
Maximum frequency minimum frequency

4.0
6.7
9.4
kHz
Maximum Duty Cycle
DMAX
8-3
(Maximum width of the low portion of the D terminal

waveform)
70
76
82
FM High Voltage
VHFM
2-3
(VFM at which the FM current is changed from 10 A to

10 A)
4.0
4.5
5.0
FM Low Voltage
VLFM
2-3
(VFM at which the FM current is changed from 10 A to

10 A)
3.2
3.6
4.0
FM Outflow Current
IsorcFM
2-3
Outflow current from FM terminal at VFM = VLFM (3.7 V typ.)

7.7
11
15.4
FM Inflow Current
IsinkFM
2-3
Inflow current into FM terminal at VFM = VHFM (4.4 V typ.)

15.4
11
7.7
VOCP(th)
1-3
(The drain current at which the low portion of the D

terminal waveform becomes shorter than the high portion,
with VOCP increasing)
0.67
0.74
0.81
twb
8-3
(The low portion of the D terminal waveform with

VOCP = 1 V)
240
350
460
ns
Burst Threshold Voltage
Vburst(th)
4-3
(FB/CC/OLP terminal voltage at which D terminal

waveform oscillation stops due to VFB decreasing from 5 V)
1.0
1.12
1.24
OLP Threshold Voltage
VOLP(th)
4-3
(FB/CC/OLP terminal voltage at which D terminal

waveform oscillation stops due to VFB increasing from 5 V)
7.3
8.6
9.9
Output Current at OLP

Operation
IOLP
4-3
(Outflow current from FB/CC/OLP terminal at VFB = 8 V)

12
18
25
OLP Delay Time
TOLP
4-3
(Time between surpassing VOLP(th) and stop of oscillation)

0.84
1.2
1.56
IFB(MAX)
4-3
(Outflow current from FB/CC/OLP terminal at VFB = 0 V)

220
310
430
Frequency Jitter Deviation
OCP Threshold Voltage
Leading Edge Blanking Time
Maximum Feedback Current
Continued on next page

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ELECTRICAL CHARACTERISTICS for Controller (MIC) continued, valid at TA = 25C, VCC = 18 V, unless otherwise specified
Constant Current Set Voltage
VSET(CC)
4-3
(FB/CC/OLP terminal voltage at which IFB changes from

310 A to 16 A due to VFB increasing from 5 V)
4.9
5.8
6.7
Constant Current Reset

Voltage
VRES(CC)
4-3
(FB/CC/OLP terminal voltage at which IFB changes from

16 A to 310 A due to VFB decreasing from 8 V)
VRES(CC) VCC = 25 V, Measurement circuit 4, VCC = 25 V
3.5
3.9
4.3
Istartup
6-3
(Outflow current from VCC terminal at VDD = 600 V)

Measurement circuit 5, VCC = 13 V
0.77
1.1
1.43
mA
OVP Threshold Voltage
VCC(OVPth)
5-3
(VCC at which the oscillation of the D terminal waveform

stops due to VCC increasing from 18 V)
Measurement circuit 1, VCC = 18 through 31 to 35.2 V
28.8
32
35.2
Latch Circuit Sustaining

Current1
ICC(H)
5-3
(Inflow current into VCC at VCC = 8.4 V, after OVP

operation)
Measurement circuit 1, VCC = 35.2 to 8.6 V
270
VCC(LaOFF)
5-3
(VCC at which ICC drops below 20 A due to decreasing

VCC after OVP operation)
Measurement circuit 1, VCC = 35.2 through 5.9 to 8.6 V
5.9
7.2
8.6
125
140
650
300
Start-Up Current
Latch Circuit Release

Voltage1
Thermal Shutdown Operating
Temperature
TJ(TSD)
ELECTRICAL CHARACTERISTICS for MOSFET, valid at TA = 25C, VCC = 18 V, unless otherwise specified
Drain-to-Source Breakdown
Voltage
VDSS
8-1
Measurement circuit 6, ID = 300 A
Drain Leakage Current
IDSS
8-1
(Inflow current into D terminal at VDD = 650 V)

On-Resistance
RDS(ON)
8-1
Measurement circuit 3, ID = 0.4 A
2.8
Switching Time
tf
8-1
250
ns
Between channel and internal frame; measured at the root

of terminal 3
52
C/W
Thermal Resistance
1Latch
Rch-F
circuit enabled when OVP and TSD in operation

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STR-A6252M
Measurement Circuit 1
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VD
100
VCC
13V
10V
18V
36V
8.4V
Vcc(La.OFF)
18V
0V
FB/CC
/OLP
Vcc(OVP)
Vcc
Vcc(OFF)
Vcc
STR-A6252M
S/OCP FM/SS GND
Vcc(ON)
VD
VD
V DD
Icc
47nF
5.1V
Icc
1F
Icc
Icc(OFF)
Vcc
4A
typ.
150A typ.
Icc
Icc(H)
VD
100
18V
VCC
V CC
V H FM
STR-A6252M
S/OCP FM/SS GND
10V
V DD
V FM
FB/CC
/OLP
18V
V FM
5.1V
1F
10V
90%
f =fosc(Hi)-fosc(Lo)
IsorcFM
Vcc
V L FM+(V H FM -V L FM )/2
IsinkFM
IFM
0A
IFM
A
V L FM
Dmax=T2/T1 100
T2
VD
0V
fosc(Hi)
10%
VD
tf
fosc(av)
T1
fosc(Lo)
VD
8
VCC
ID
18V
Vcc
Vocp
STR-A6252M
0.4A
S/OCPFM/SS GND
1
V OCP
FB/CC
/OLP
1V
0V
VD
V OCP
47nF
5.1V
18V
Vcc
1F
V D(Lo)
Tbw
RDS(ON) =V D(Lo) / 0.4

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25V
18V
100
Vcc
VCC
10V
V FB
FB/CC
/OLP
Vburst
V RST(CC)
8V
V (HYS)
STR-A6252M
S/OCP FM/SS GND
V OLP
V SET(CC)
0V
TOLP
IFB
Vcc
V DD
47nF
VD
1F
V FB
310A typ.
IFB
18A typ.
IOLP
IFB(MAX)
VCC
VCC
ID
S/OCP FM/SS GND
V DD
STR-A6252M
STR-A6252M
VD
Icc
FB/CC
/OLP
ID S/OCP FM/SS GND
Vcc
310A typ.
Icc
FB/CC
/OLP
4
300
A
1F
Vcc
18V
1F
L
VCC
Vcc
STR-A6252M
V DS
V DD
S/OCP FM/SS GND

1
V GS
18V
8V
V GS
Icc
FB/CC
/OLP
4
V DSpeak
Vcc
18V
1F
IL
V DD
V DS
VDS peak
2
EAS = L (ILpeak )
2
VDS peak VDD
Adjust T such that ILpeak = 3.0 A

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STR-A6252M
TYPICAL APPLICATION CIRCUIT
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For improved thermal dissipation, connect terminals 7 and 8

to as large an area of exposed copper as possible
OUT
85~ 265VAC
PC
VCC
GND
STR-A6252
S/OCP FM/SS GND
1
2
3
R4
FB/CC
/OLP
4
Function of External Parts
PC
R5

Mode
R4
R5
CV/CC
1 to 1.8 M
82 to 150 k
OLP
None
None
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STR-A6252M
PACKAGE DIMENSIONS, DIP-8
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Dimens ions in Inc hes

(for reference only)
Dimens ions in Millimeters

(controlling dimens ions )

10
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STR-A6252M
PACKING SPECIFICATIONS
Minimum packing option: Tubes
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Stopper, with
attached tab
Stopper, with
no tab
Orientation of Devices in
Shipping Tubes
50 pieces
Type A
Type B
0
51
130
135
140
145
Outer Carton Dimensions

Capacity: 4 inner
cartons per outer carton;
10,000 devices maximum
per outer carton
4
52
63
Inner Carton Dimensions

Capacity: 50 tubes
per inner carton
69
Shipping Tube
Dimensions
5
53
0
52
290
265
All dimensions: mm
11
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WARNING These devices are designed to be operated at lethal voltages and energy levels.
Circuit designs
that embody these components must conform with applicable safety requirements. Precautions must be
taken to prevent accidental contact with power-line potentials. Do not connect grounded test equipment.
The use of an isolation transformer is recommended during circuit development and breadboarding.
Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions.
Cautions for Storage
Ensure that storage conditions comply with the standard temperature (5C to 35C) and the standard relative humidity (around 40 to 75%); avoid
storage locations that experience extreme changes in temperature or humidity.
Avoid locations where dust or harmful gases are present and avoid direct sunlight.
Reinspect for rust in leads and solderability of products that have been stored for a long time.
Cautions for Testing and Handling
When tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device,
shorts between adjacent products, and shorts to the heatsink.
Remarks About Using Silicone Grease with a Heatsink
When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more silicone grease than required is
applied, it may produce stress.
Volatile-type silicone greases may produce cracks after long periods of time, resulting in reduced heat radiation effect. Silicone grease with low
consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.
Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, are indicated below:
Type
Suppliers
G746
Shin-Etsu Chemical Co., Ltd.
YG6260
Toshiba Silicone Co., Ltd.
SC102
Dow Corning Toray Silicone Co., Ltd.
Soldering
When soldering the products, please be sure to minimize the working time, within the following limits:
2605C 10 s
3505C 3 s
Soldering iron should be at a distance of at least 1.5 mm from the body of the products
Electrostatic Discharge
When handling the products, operator must be grounded. Grounded wrist straps worn should have at least 1 M of resistance to ground to prevent
shock hazard.
Workbenches where the products are handled should be grounded and be provided with conductive table and floor mats.
When using measuring equipment such as a curve tracer, the equipment should be grounded.
When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltages generated by them
from being applied to the products.
The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped in aluminum foil.

12
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The products described herein are manufactured in Japan by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.
Sanken and Allegro reserve the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the performance, reliability, or manufacturability of its products. Therefore, the user is cautioned to verify that the information in this
publication is current before placing any order.
When using the products described herein, the applicability and suitability of such products for the intended purpose shall be reviewed at the users
responsibility.
Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products
at a certain rate is inevitable.
Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems
against any possible injury, death, fires or damages to society due to device failure or malfunction.
Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equipment or apparatus
(home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Their use in any application requiring radiation
hardness assurance (e.g., aerospace equipment) is not supported.
When considering the use of Sanken products in applications where higher reliability is required (transportation equipment and its control systems
or equipment, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written
confirmation of your specifications.
The use of Sanken products without the written consent of Sanken in applications where extremely high reliability is required (aerospace equipment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.
The information included herein is believed to be accurate and reliable. Application and operation examples described in this publication are
given for reference only and Sanken and Allegro assume no responsibility for any infringement of industrial property rights, intellectual property
rights, or any other rights of Sanken or Allegro or any third party that may result from its use.
Copyright 2006 Allegro MicroSystems, Inc.
This datasheet is based on Sanken datasheet SSE-23421
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S

Sanken Power Devices

Approximate Scale 1:1

FEATURES AND BENEFITS

The STR-A6252M is a 67 kHz PWM topology (with 5%

All performance characteristics given are typical values for circuit or

Always order by complete part number, e.g.:

FM/Soft start terminal

Capacitor connection terminal for

Input of constant voltage control

Power supply terminal

Input of power supply for control

MOSFET drain / Input of startup

115 Northeast Cutoff, Box 15036

VS/OCP = 0.81 V with reference to GND,

Single Pulse Avalanche Energy2

VDD = 99 V, L = 20 mH, IL = 3.0 A

S/OCP Terminal Voltage

Controller (MIC) Input Voltage

FB/CC/OLP Terminal Voltage

MOSFET Power Dissipation3,4

Controller (MIC) Power Dissipation5

Operating Internal Frame

Operating Ambient Temperature

Channel Junction Temperature

Figure 1 MOSFET Safe Operating Area

Drain Current, ID (A)

Safe Operating Area

Figure 2 MOSFET Safe Operating Area

Drain-to-Source Voltage, VDS (V)

115 Northeast Cutoff, Box 15036

Figure 3 MOSFET Avalanche Energy Derating Curve

Figure 4 Transient Thermal Resistance

Channel Junction Temperature, TJ (C)

Figure 5 MOSFET Power Dissipation versus Temperature

Figure 6 MIC Power Dissipation versus Temperature

Power Dissipation, PD2 (W)

Power Dissipation, PD1 (W)

PD1 = 1.35 W at TA &

Ambient Temperature, TA (C)

Internal Frame Temperature, TF (C)

115 Northeast Cutoff, Box 15036

Operation Start Voltage

(Power supply voltage at which device starts operating)

Operation Stop Voltage

(Power supply voltage at which device stops operating)

Circuit Current In Operation

(Inflow current into power supply terminal, in operation)

Initialization Circuit Current

(Inflow current into power supply terminal,, while subject to

Center Switching Frequency

(Center oscillation frequency of D terminal)

Maximum frequency minimum frequency

Maximum Duty Cycle

(Maximum width of the low portion of the D terminal

(VFM at which the FM current is changed from 10 A to

(VFM at which the FM current is changed from 10 A to

Outflow current from FM terminal at VFM = VLFM (3.7 V typ.)

Inflow current into FM terminal at VFM = VHFM (4.4 V typ.)

PD1 = 1.35 W at TA &