Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
2SC5071
Application : Switching Regulator and General Purpose
Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)
Symbol Ratings Unit Symbol Conditions Ratings Unit
4.80.2
A 15.60.4
5.00.2
VCBO 500 ICBO VCB=500V 100max
2.0
V
1.8
9.6 2.00.1
19.90.3
4.0
IC 12(Pulse24) hFE VCE=4V, IC=7A 10 to 30 a
A 3.20.1
b
IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max V
PC 100(Tc=25C) W VBE(sat) IC=7A, IB=1.4A 1.3max V
2
4.0max
20.0min
Tj 150 C fT VCE=12V, IE=1A 10typ MHz 3
Tstg 55 to +150 C COB VCB=10V, f=1MHz 105typ pF 1.05 +0.2 0.65 +0.2
-0.1 -0.1
I C V CE Characteristics (Typical) V CE (sat),V BE (sat) I C Temperature Characteristics (Typical) I C V BE Temperature Characteristics (Typical)
(I C /I B =5) (V CE =4V)
12 12
Collector-Emitter Saturation Voltage V C E (s at) (V )
1A
Base-Emitter Saturation Voltage V B E (s at) (V)
80 0m A
10 10
V B E (sat)
60 0m A
1
8 8
Temp)
55C (Case
400m A
e Temp)
6 25C (Cas 6
emp )
mp)
ase T
)
)
emp
)
mp
(C
25 Temp
200mA 125C
e Te
Te
4 4
se T
se
e
C
(Cas
as
(Ca
(Ca
I B =100mA
(C
5C
5
25C
55C
2 2
12 C
5
12
V C E (sat) 5
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.5 1.0
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)
(V C E =4V)
40 5 3
t on t s tg t f ( s)
125C
V C C 200V t s tg
DC Cur rent Gain h F E
I C :I B1 :I B2 =10:1:2
25C
1
1
Swi tchi ng T im e
30C
0.5
tf
0.5
10
t on
8 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 12 0.5 1 5 10 12 1 10 100 1000
Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c T a Derating
30 30 100
10
0
s
M aximum Power Dissipa ti on P C (W)
10 10
W
ith
Co lle ctor Cu rren t I C (A)
5 5
In
fin
ite
he
50
at
si
nk
1 1
Without Heatsink
Natural Cooling
0.5 Without Heatsink 0.5
L=3mH
Natural Cooling I B2 =1.0A
Dut y:less than 1%
Without Heatsink
0.1 3.5
0.1 0
5 10 50 100 500 5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(C)
125