LAPT 2SC3264

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1295) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-200
Symbol Ratings Unit Symbol Conditions Ratings Unit
36.4±0.3 6.0±0.2
VCBO 230 V ICBO VCB=230V 100max µA 24.4±0.2 2.1
VCEO 230 V IEBO VEB=5V 100max µA 2-ø3.2±0.1 9

VEBO 5 V V(BR)CEO IC=25mA 230min V

7
21.4±0.3
IC 17 A hFE VCE=4V, IC=5A 50min∗ a
IB 5 A VCE(sat) IC=5A, IB=0.5A 2.0max V b

PC 200(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz 2

4.0max
20.0min
Tj 150 °C COB VCB=10V, f=1MHz 250typ pF 3
0.65 +0.2
∗hFE Rank O(50 to 100), Y(70 to 140)
-0.1
Tstg –55 to +150 °C 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 3.0 +0.3

-0.1

■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 18.4g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
60 12 5 10 –5 0.5 –0.5 0.30typ 2.40typ 0.50typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
17 3 17
Collector-Emitter Saturation Voltage V C E (s at) (V )

0 A 0A 1.5
A
3. 2.
A
15 1.0 15

A
600m

Collector Current I C (A)

Collector Current I C (A)

A
400m 2

10 10
A
200m

p)

mp)
10 0m A

em

e Te
eT
1

Cas
5 I C =10A 5

(Cas
50mA

˚C (

–30˚C
125
I B =20mA 5A 25˚C

0 0 0
0 1 2 3 4 0 0.5 1.0 1.5 2.0 0 1 2 3
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC Curr ent Gain h FE

Transient Thermal Resistance

DC Curr ent Gain h FE

100 100
25˚C
Typ
1
–30˚C
50
50
0.5

10
10 0.1
0.02 0.1 0.5 1 5 10 17 0.02 0.1 0.5 1 5 10 17 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
100 40 200

10
m
s
Ma xim um Powe r Dissipat io n P C (W)

80 160
10 DC
Cut-o ff Fr eque ncy f T ( MH Z )

W
ith
Co lle ctor Cu rren t I C ( A)

Typ 5
In
fin

60 120
ite
he
at
si
nk

40 1 80

0.5
20 Without Heatsink
Natural Cooling 40

Without Heatsink
5
0 0.1
–0.02 –0.1 –1 –10 3 10 100 300 0
0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

65