2SC4138

Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P)
Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit
15.6±0.4 4.8±0.2

5.0±0.2
µA

2.0

1.8
VCBO 500 V ICBO VCB=500V 100max 9.6 2.0±0.1

VCEO 400 V IEBO VEB=10V 100max µA

VEBO 10 V V(BR)CEO IC=25mA 400min V

19.9±0.3

4.0
a ø3.2±0.1
IC 10(Pulse20) A hFE VCE=4V, IC=6A 10 to 30
b
IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max V
PC 80(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max V 2

4.0max
20.0min
Tj 150 °C fT VCE=12V, IE=–0.7A 10typ MHz 3

Tstg –55 to +150 °C COB VCB=10V, f=1MHz 85typ pF 1.05 +0.2

-0.1 0.65 +0.2
-0.1

■Typical Switching Characteristics (Common Emitter) 5.45±0.1

B C E
5.45±0.1 1.4

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
200 33.3 6 10 –5 0.6 –1.2 1max 3max 0.5max b. Lot No.

I C – V CE Characteristics (Typical) V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)
(I C /I B =5) (V C E =4V)
Collector-Emitter Saturation Voltage V CE(s a t) (V )

10 1.4 10
A 1A
1.2
Base-Emitter Saturation Voltage V B E (s a t) (V )

8 600 mA 8

Collector Current I C (A)

Collector Current I C (A)

400mA
6 6
V B E (sat)

)
mp

)
emp

mp)
Te
4 200m A 4

se T

e Te
se
(Ca

(Ca

(Cas
˚C
I B =100m A

25˚C
125

–55˚C
2 2

V C E (sat)
0 0 0
0 1 2 3 4 0.02 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-Emitter Voltage V C E (V) Collector Current I C (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) t on •t stg • t f – I C Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚ C/ W)

(V C E =4V)
100 10 3
t o n• t s t g• t f (µ s)

5 t s tg
Transient Thermal Resistance

125˚C
DC C urrent G ain h FE

50
25˚C V C C 200V
I C :I B 1 :–I B2 =10:1:2
–55˚C
1
Switching Ti me

0.5 t on
10 0.5
tf

5 0.1 0.3
0.02 0.05 0.1 0.5 1 5 10 0.1 0.5 1 5 10 1 10 100 1000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

Safe Operating Area (Single Pulse) Reverse Bias Safe Operating Area P c – T a Derating
30 30 80
10
1m 0µ
s s
Ma xim um Powe r Dissipat io n P C (W)

10 10
60
W
ith
Collect or Curr ent I C (A)

Collect or Cur ren t I C (A)

5 5
In
fin
ite
he

40
at
si
nk

1 1
Without Heatsink
Natural Cooling
0.5 0.5
Without Heatsink L=3mH
20
Natural Cooling –IB2=1A
Duty:less than 1%

Without Heatsink
3.5
0.1 0.1
5 10 50 100 500 0
5 10 50 100 500 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E (V) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

90