Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD1785)
Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD1785)
Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD1785)
Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)
2SB1258 B
Equivalent circuit C
Application : Driver for Solenoid, Relay and Motor and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2
4.0±0.2
2.8 c0.5
VCBO –100 V ICBO VCB=–100V –10max µA
VCEO –100 V IEBO VEB=–6V –10max µA
8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –100min V
ø3.3±0.2
IC –6(Pulse–10) hFE VCE=–2V, IC=–3A 1000min a
A
0.8±0.2
b
IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max V
PC 30(Tc=25°C) VBE(sat) IC=–3A, IB=–6mA –2max V
±0.2
3.9
W
13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz 1.35±0.15
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ b. Lot No.
–6 –3 –6
mA mA
–2.0
A
4
2.
4m
–
–1 .8 m A
3.
=–
–5 –5
IB
–4 –4
–0.9mA –2
–3 –3
mp)
)
Temp
Temp
e Te
(Cas
(Case
–2
(Case
–2
–6A
125˚C
25˚C
–4A
–30˚C
–1 –1 I C =–2A –1
0 –0.6 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 –200 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)
(V C E =–4V) (V C E =–4V)
8000 8000 5
Typ
5000 5000
DC Curr ent Gain h FE
5˚C
12
˚C
1000 25
1000
500
0˚C
500 –3
1
100
80 30 0.5
–0.03 –0.1 –0.5 –1 –6 –0.03 –0.1 –0.5 –1 –6 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
Silicone Grease
Ma xim um Powe r Dissipation P C (W)
100
50
0µ
Heatsink: Aluminum
1m
0µ
10
–5
s
in mm
Cu t-off Fr eque ncy f T ( MH Z )
s
m
DC
s
Collector Cur rent I C (A)
80 20
W
ith
In
fin
60 –1 150x150x2
ite
he
100x100x2
at
–0.5
si
40 10
nk
40