Darlington: Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SD1785)

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(3 k Ω)(1 0 0Ω) E

Darlington
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)
2SB1258 B

Equivalent circuit C

Application : Driver for Solenoid, Relay and Motor and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM20(TO220F)
Symbol Ratings Unit Symbol Conditions Ratings Unit 4.2±0.2
10.1±0.2

4.0±0.2
2.8 c0.5
VCBO –100 V ICBO VCB=–100V –10max µA
VCEO –100 V IEBO VEB=–6V –10max µA

8.4±0.2
16.9±0.3
VEBO –6 V V(BR)CEO IC=–10mA –100min V
ø3.3±0.2
IC –6(Pulse–10) hFE VCE=–2V, IC=–3A 1000min a
A

0.8±0.2
b
IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max V
PC 30(Tc=25°C) VBE(sat) IC=–3A, IB=–6mA –2max V

±0.2
3.9
W

13.0min
Tj 150 °C fT VCE=–12V, IE=0.2A 100typ MHz 1.35±0.15

Tstg COB 100typ 1.35±0.15


–55 to +150 °C VCB=–10V, f=1MHz pF
0.85 +0.2
-0.1
0.45 +0.2
-0.1 2.4±0.2
2.54 2.54
■Typical Switching Characteristics (Common Emitter) 2.2±0.2

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Part No.
B C E
–30 10 –3 –10 5 –6 6 0.6typ 1.6typ 0.5typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)


(V C E =–4V)
Collector-Emitter Saturation Voltage V C E (s at) (V )

–6 –3 –6
mA mA
–2.0
A

4
2.
4m


–1 .8 m A
3.
=–

–5 –5
IB

Collector Current I C (A)


–1.2 mA
Collector Current I C (A)

–4 –4

–0.9mA –2

–3 –3

mp)

)
Temp

Temp
e Te
(Cas

(Case
–2

(Case
–2
–6A

125˚C

25˚C
–4A

–30˚C
–1 –1 I C =–2A –1

0 –0.6 0
0 –1 –2 –3 –4 –5 –6 –0.5 –1 –10 –100 –200 0 –1 –2 –2.2
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics


θ j- a ( ˚ C/ W)

(V C E =–4V) (V C E =–4V)
8000 8000 5
Typ
5000 5000
DC Curr ent Gain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

5˚C
12
˚C
1000 25
1000
500
0˚C
500 –3
1
100

80 30 0.5
–0.03 –0.1 –0.5 –1 –6 –0.03 –0.1 –0.5 –1 –6 1 10 100 1000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating


(V C E =–12V)
120 –20 30

Typ –10 Natural Cooling


10

Silicone Grease
Ma xim um Powe r Dissipation P C (W)

100
50

Heatsink: Aluminum
1m


10

–5
s

in mm
Cu t-off Fr eque ncy f T ( MH Z )

s
m

DC
s
Collector Cur rent I C (A)

80 20
W
ith
In
fin

60 –1 150x150x2
ite
he

100x100x2
at

–0.5
si

40 10
nk

Without Heatsink 50x50x2


Natural Cooling
20
–0.1 Without Heatsink
2
0 –0.05 0
0.05 0.1 0.5 1 5 6 –3 –5 –10 –50 –100 –200 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

40

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