LAPT 2SC4886

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Symbol Conditions Ratings

0.8±0.2
Unit Unit 15.6±0.2 5.5±0.2

VCBO 150 V ICBO VCB=150V 100max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO 150 V IEBO VEB=5V 100max

23.0±0.3
VEBO 5 V V(BR)CEO IC=25mA 150min V
ø3.3±0.2
IC 14 A hFE VCE=4V, IC=5A 50min∗ a

1.6
b
IB 3 A VCE(sat) IC=5A, IB=500mA 2.0max V

3.0
PC fT VCE=12V, IE=–2A 60typ MHz

3.3
80(Tc=25°C) W
1.75
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter) 1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Part No.
B C E
60 12 5 10 –5 0.5 –0.5 0.26typ 1.5typ 0.35typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A (V C E =4V)
14 0m 3 14
Collector-Emitter Saturation Voltage V C E (s at) (V )

60 0mA 400m
A
A

50 A
0m

300m
75

A
200m

Collector Current I C (A)

Collector Current I C (A)

10 A 10
150m
2

10 0m A

p)
p)
50m A 5

em

Tem
5
1

eT

se
as

(Ca
(C
I C =10A

5˚C
I B =20mA

˚C
˚C
12

–30
25
5A

0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j - a ( ˚ C/W)

(V C E =4V) (V C E =4V)
200 200 3

125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E

Transient Thermal Resistance

100 100 25˚C 1

Typ

–30˚C
0.5
50 50

20 20 0.1
0.02 0.1 0.5 1 5 10 14 0.02 0.1 0.5 1 5 10 14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
80 40 80

1m
10 s
M aximum Power Dissipa ti on P C (W)

10 m
Typ s
10 0m
Cut-o ff F requ ency f T (MH Z )

60 DC s 60
W
ith
Co lle ctor Cu rre nt I C (A)

5
In
fin
ite
he

40 40
at
si

1
nk

0.5

20 Without Heatsink 20
Natural Cooling

0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 2 5 10 50 100 200 0 25 50 75 100 125 150
150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

120