Diodes Spice Models
Diodes Spice Models
Diodes Spice Models
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=20May2016
*VERSION=1
.MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35
+ BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7
+ CJE=1.02E-12 MJE=0.3 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45
+ BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7
+ CJE=114E-12 MJE=0.35 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35
+ BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5
+ CJE=1.05E-12 MJE=0.2 VJE=0.6
+ TF=10E-9 TR=30e-9
.MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45
+ BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6
+ CJE=125E-12 MJE=0.5 VJE=1
+ TF=10E-9 TR=30e-9
.ENDS
.MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35
+ BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7
+ CJE=1.02E-12 MJE=0.3 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45
+ BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7
+ CJE=114E-12 MJE=0.35 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35
+ BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5
+ CJE=1.05E-12 MJE=0.2 VJE=0.6
+ TF=10E-9 TR=30e-9
.MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45
+ BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6
+ CJE=125E-12 MJE=0.5 VJE=1
+ TF=10E-9 TR=30e-9
.ENDS
* (c) 2016 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
.SUBCKT ZXGD3108 1 2 3 4 5 6 7 8
Gin 12 11 8 2 .1
D1 10 11 DMOD
D2 10 12 DMOD
Rset 11 12 33.3k TC2=.1m
Cset 11 12 1p
Rgnd 12 2 1m
Sw 14 2 12 11 SMOD
Rbias 5 14 1k
Cbias 14 2 .8n
Rshort1 2 3 10m
Rshort2 5 6 10m
Q1 5 14 31 npns
Q2 5 31 4 npnl
Q3 2 31 4 pnpl
Q4 2 14 31 pnps
.MODEL npns NPN IS=6E-16 NF=1.005 BF=260 IKF=0.007 VAF=51 ISE=2E-16 NE=1.35
+ BR=25 ISC=1e-15 NC=1.2 RB=200 RE=3 RC=0.6 CJC=0.24E-12 MJC=0.33 VJC=0.7
+ CJE=1.02E-12 MJE=0.3 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL npnl NPN IS=3E-13 NF=1.005 BF=260 IKF=0.7 VAF=51 ISE=1E-14 NE=1.45
+ BR=25 ISC=1e-13 NC=1.2 RB=2 RE=0.05 RC=0.1 CJC=27E-12 MJC=0.4 VJC=0.7
+ CJE=114E-12 MJE=0.35 VJE=0.7
+ TF=1E-9 TR=30e-9
.MODEL pnps PNP IS=5E-16 NF=1 BF=350 IKF=0.006 VAF=51 ISE=5E-16 NE=1.35
+ BR=25 ISC=1e-15 NC=1.2 RB=500 RE=5 RC=.6 CJC=0.54E-12 MJC=0.32 VJC=0.5
+ CJE=1.05E-12 MJE=0.2 VJE=0.6
+ TF=10E-9 TR=30e-9
.MODEL pnpl PNP IS=2.2E-13 NF=1 BF=350 IKF=0.6 VAF=51 ISE=1E-14 NE=1.45
+ BR=25 ISC=1e-13 NC=1.2 RB=3 RE=0.05 RC=0.1 CJC=35E-12 MJC=0.4 VJC=0.6
+ CJE=125E-12 MJE=0.5 VJE=1
+ TF=10E-9 TR=30e-9
.ENDS
*DIODES_INC_SPICE_MODEL ZXGD3105
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Nov2012
*VERSION=1
.SUBCKT ZXGD3105 1 2 3 4 5 6 7 8
L1 1 11 2n
L2 7 12 2n
Din 3 4 DMOD1
Rin 3 12 30000
*Dx 3 5 DMOD
D1 3 11 DMOD
D2 12 3 DMOD
Q1 5 3 12 NMOD
G1 11 13 VALUE={1.38e-11*(exp((V(30)-V(13))/.0026))}
G2 14 12 VALUE={1.38e-11*(exp((V(14)-V(30))/.0026))}
R01 11 13 1000000
R02 14 12 1000000
R03 13 8 2
R04 14 8 1.2
D3 8 11 DMOD
D4 12 8 DMOD
R1 5 30 10
C2 30 12 8p
CS 30 8 2p
.MODEL DMOD D(IS=8n BV=30)
.MODEL DMOD1 D(IS=200E-15 RS=59.7m
+ CJO=.6p VJ=.42 M=0.36 N=1.35 TT=7n)
.MODEL NMOD NPN(IS=1.25E-15 BF=11 NF=1 ISE=6E-16 NE=1.15 CJC=2.56E-12 VJC=.72
MJC=.21 CJE=3.72E-12 VJE=.72 MJE=.24 TR=.1E-9)
.ENDS
*TITLE=AP8803 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX
*DATE=6th Jan 2012
*VERSION=1
*PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN
*
* SIMetrix macromodel for AL8803 Buck LED Driver
.subckt AL8803_SIMETRIX 10 26 13 20 18
* pins-------------------1---2---3----4---5
*names SW GND CTRL SET VIN
* Vref Generator *
E2 19 26 18 26 1
B111 14 26 V=Min(V(19), 1.25)
R3 14 19 20k
R4 14 13 200k
* UV lockout *
X_S6 18 26 23 26 AP_S6
* Main Function *
G2 26 8 18 20 1m
C4 26 20 20p
R9 26 9 3.832k
R10 9 8 10.859k
X_S7 23 26 9 26 AP_S7
G3 21 26 8 12 1000m
R11 26 21 1meg
V3 24 26 700mV
D8 24 21 Dclamp
V4 22 26 6V
D9 21 22 Dclamp
* Output NMOS *
X_S8 23 26 11 26 AP_S8
R12 11 10 0.4
C5 26 10 100p
* Supply Current *
X_S3 adj_lockout 26 4 7 AP_S3
R1 26 7 1.58k
R2 26 4 67k
X_S2 18 26 6 4 AP_S2
V1 5 26 1V
X_F1 6 5 18 26 AP_F1
* Timestep Control *
* Only purpose is to force timestep without using a control card *
V99 99 26 DC 0 AC 0 PULSE 0 0 0 100n 100n 500n 1u
R99 99 26 100
.model Dzener D Is=1e-8 N=10 bv=1.245 ibv=1e-12 Cjo=.1e-12 Rs=.1 TBV1=4e-5 nbv=.01
.model Dclamp D Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Cjo=4p M=.3333 Vj=.5
.subckt AP_F1 1 2 3 4
F_F1 3 4 VF_F1 1
VF_F1 1 2 0V
.ends AP_F1
.subckt AP_S3 1 2 3 4
S_S3 3 4 1 2 S3
RS_S3 1 2 1G
.MODEL S3 VSWITCH Roff=1e6 Ron=1.0 Voff=198mV Von=200mV
.ends AP_S3
.subckt AP_S2 1 2 3 4
S_S2 3 4 1 2 S2
RS_S2 1 2 1G
.MODEL S2 VSWITCH Roff=1e6 Ron=1.0 Voff=1.248V Von=1.25V
.ends AP_S2
.subckt AP_S6 1 2 3 4
S_S6 3 4 1 2 S6
RS_S6 1 2 1G
.MODEL S6 VSWITCH Roff=10e6 Ron=1.0 Voff=6.505V Von=6.495V
.ends AP_S6
.subckt AP_S7 1 2 3 4
S_S7 3 4 1 2 S7
RS_S7 1 2 1G
.MODEL S7 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV
.ends AP_S7
.subckt AP_S8 1 2 3 4
S_S8 3 4 1 2 S8
RS_S8 1 2 1G
.MODEL S8 VSWITCH Roff=10e6 Ron=1.0 Voff=2750mV Von=2755mV
.ends AP_S8
.subckt AP_S4 1 2 3 4
S_S4 3 4 1 2 S4
RS_S4 1 2 1G
.MODEL S4 VSWITCH Roff=10e6 Ron=1 Voff=255mV Von=245mV
.ends AP_S4
.subckt AP_S5 1 2 3 4
S_S5 3 4 1 2 S5
RS_S5 1 2 1G
.MODEL S5 VSWITCH Roff=10e6 Ron=1.0 Voff=251mV Von=249mV
.ends AP_S5
.ends AP8803_SIMETRIX
*
* (c) 2012 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*TITLE=AL8806 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=22 Jul 2013
*VERSION=3
*PIN_ORDER 1:SET, 2:GND, 3:GND, 4:CTRL, 5:SW, 6:SW, 7: N/C, 8: VIN
.subckt AL8806 1 2 3 4 5 6 7 8
Rsh1 2 3 1u
Rsh2 5 6 1u
*
* Block 1: Vref Generator * input nodes 8 and 2, outputs 11 and 2
.param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and
output
.param MUH1=0.05 MUL1=0.1 ; high and low curve error
.param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope
E11 11 2 value={min(max(VOL1+SL1*(V(8)-V(2)-VIL1+MUL1*(1-tanh((V(8)-V(2)-
VIL1+MUL1)/MUL1))
+ -MUH1*(1+tanh((V(8)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)}
R11 11 4 50k
S32 53 2 32 2 S_32
.MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV
.ends AL8805
* =====================================================================
*
* (c) 2013 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA
*TITLE=AL8807 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=17th Jan 2013
*VERSION=1
*PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN
*
* This model is intended for feasibility study of application
* design. It is expected that it will not accurately represent
* the device real performance. However some important features
* of the device are modelled approximately.
* The model does not include effects of temperature or self-heating.
* Testing of prototype hardware and optimisation on the bench
* is always required before production build.
*
* NOTE: set RELTOL=1E-5 for clean switching waveform
*
.subckt AL8807 10 26 13 20 18
* Connections SW GND CTRL SET VIN
* pins SOT23 1 2 3 4 5
*
* Block 1: Vref Generator * input is V(18)-V(26)
*required input parameters
.param VIL1=0.7 VIH1=3.5 VOL1=0 VOH1=2.5 ; low and high limits of input and
output
.param MUL1=0.1 MUH1=0.05 ; low and high curve error
*calculations
.param KL1={MUL1*tanh((VIH1-VIL1)/MUL1)} KH1={MUH1*tanh((VIH1-VIL1)/MUH1)}
.param SL1={(VOH1-VOL1)/(VIH1-VIL1-KL1-KH1)} ;gain slope
E11 14 26 value={min(max(VOL1+SL1*(V(18)-V(26)-VIL1-MUL1*tanh((V(18)-V(26)-
VIL1)/MUL1)
+ -MUH1*tanh((V(18)-V(26)-VIH1)/MUH1)-KH1),VOL1),VOH1)}
R4 14 13 50k
S5 21 26 31 26 S_5
.MODEL S_5 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV
.ends AL8807
* =====================================================================
*
* (c) 2013 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA
*
*TITLE=AL8807A MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=1st Feb 2013
*VERSION=1
*PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN
*
* This model is intended for feasibility study of application
* design. It is expected that it will not accurately represent
* the device real performance. However some important features
* of the device are modelled approximately.
* The model does not include effects of temperature or self-heating.
* Testing of prototype hardware and optimisation on the bench
* is always required before production build.
*
* NOTE: set RELTOL=1E-5 for clean switching waveform
*
.subckt AL8807A 1 2 3 4 5
* Connections SW GND CTRL SET VIN
* pins SOT23 1 2 3 4 5
*
* Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2
.param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and
output
.param MUH1=0.05 MUL1=0.1 ; high and low curve error
.param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope
E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-
VIL1+MUL1)/MUL1))
+ -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)}
R11 11 3 50k
.ends AL8807A
* =====================================================================
*
* (c) 2013 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA
**$ENCRYPTED_LIB
**$INTERFACE
*$
.SUBCKT ZXLD1371_PSPICE GATE ADJ REF GI ISIM VIN PWM SGND STATUS
+ VAUX SHP PGND FLAG TADJ NC1 NC2
$CDNENCSTART
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.ENDS ZXLD1371_PSPICE
*$
.subckt ZXLD1371_FOR_HIERARCHY_S7 1 2 3 4
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S7
*$
.subckt ZXLD1371_FOR_HIERARCHY_S4 1 2 3 4
$CDNENCSTART
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.ends ZXLD1371_FOR_HIERARCHY_S4
*$
.subckt ZXLD1371_FOR_HIERARCHY_S1 1 2 3 4
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.ends ZXLD1371_FOR_HIERARCHY_S1
*$
.subckt ZXLD1371_FOR_HIERARCHY_S5 1 2 3 4
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.ends ZXLD1371_FOR_HIERARCHY_S5
*$
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.ends ZXLD1371_FOR_HIERARCHY_S9
*$
.subckt FREQ_HYS_CONTROL_freq_S5 1 2 3 4
$CDNENCSTART
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.ends FREQ_HYS_CONTROL_freq_S5
*$
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.ends FREQ_HYS_CONTROL_freq_S4
*$
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$CDNENCFINISH
.ends FREQ_HYS_CONTROL_freq_S2
*$
.subckt FREQ_HYS_CONTROL_freq_S7 1 2 3 4
$CDNENCSTART
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.ends FREQ_HYS_CONTROL_freq_S7
*$
.subckt FREQ_HYS_CONTROL_freq_S6 1 2 3 4
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$CDNENCFINISH
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$CDNENCSTART
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$CDNENCFINISH
.ends FREQ_HYS_CONTROL_freq_S3
*$
.subckt ZXLD1371_FOR_HIERARCHY_S3 1 2 3 4
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S3
*$
.subckt ZXLD1371_FOR_HIERARCHY_S2 1 2 3 4
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S2
*$
.subckt ZXLD1371_FOR_HIERARCHY_S8 1 2 3 4
$CDNENCSTART
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$CDNENCFINISH
.ends ZXLD1371_FOR_HIERARCHY_S8
*$
.subckt FLAG_AND_STATUS_STATUS_FLAG_S1 1 2 3 4
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$CDNENCFINISH
.ends FLAG_AND_STATUS_STATUS_FLAG_S1
*$
.SUBCKT COMPARATOR IN+ IN- OUT PARAMS: DELAY=10n
$CDNENCSTART
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$CDNENCFINISH
.ENDS COMPARATOR
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.SUBCKT AND_2 A B Y
$CDNENCSTART
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$CDNENCFINISH
.ENDS AND_2
*$
.SUBCKT AND_3 A B C Y
$CDNENCSTART
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$CDNENCFINISH
.ENDS AND_3
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.SUBCKT OR_2 A B Y
$CDNENCSTART
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$CDNENCFINISH
.ENDS OR_2
*$
.SUBCKT OR_3 A B C Y
$CDNENCSTART
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.SUBCKT BUFFER IN OUT
$CDNENCSTART
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$CDNENCFINISH
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.SUBCKT BUFFER_DELAY IN OUT PARAMS: DELAY=10n
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$CDNENCFINISH
.ENDS BUFFER_DELAY
*$
.SUBCKT INVERTER IN OUT
$CDNENCSTART
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.ENDS INVERTER
*$
.MODEL D_IDEAL D
$CDNENCSTART
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$CDNENCFINISH
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.MODEL D_LED D
$CDNENCSTART
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$CDNENCFINISH
*$
.SUBCKT COMP_HYS IN+ IN- OUT PARAMS: HYS=100m
$CDNENCSTART
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$CDNENCFINISH
.ENDS COMP_HYS
*$
.MODEL symbol_name_d d
$CDNENCSTART
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$CDNENCFINISH
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.model symbol_name_nmos nmos
*$
.model symbol_name_bjt npn
*$
.SUBCKT OPAMP IN+ IN- OUT PARAMS: POLE=100k VMAX=5 VMIN=0 GAIN=10000
$CDNENCSTART
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$CDNENCFINISH
.ENDS OPAMP
*$
.SUBCKT SR_LATCH S R Q Qb
$CDNENCSTART
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.ENDS SR_LATCH
*$
*TITLE=AL8805 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=1st Feb 2013
*VERSION=2
*PIN_ORDER 1:SW, 2:GND, 3:CTRL, 4:SET, 5:VIN
*
* This model is intended for feasibility study of application
* design. It is expected that it will not accurately represent
* the device real performance. However some important features
* of the device are modelled approximately.
* The model does not include effects of temperature or self-heating.
* Testing of prototype hardware and optimisation on the bench
* is always required before production build.
*
* NOTE: set RELTOL=1E-5 for clean switching waveform
*
.subckt AL8805 1 2 3 4 5
* Connections SW GND CTRL SET VIN
* pins SOT23 1 2 3 4 5
*
* Block 1: Vref Generator * input nodes 5 and 2, outputs 11 and 2
.param VIL1=0.8 VOL1=0 VIH1=3.45 VOH1=2.5 ;high and low limits of input and
output
.param MUH1=0.05 MUL1=0.1 ; high and low curve error
.param SL1={(VOH1-VOL1)/(VIH1-VIL1)} ; gain slope
E11 11 2 value={min(max(VOL1+SL1*(V(5)-V(2)-VIL1+MUL1*(1-tanh((V(5)-V(2)-
VIL1+MUL1)/MUL1))
+ -MUH1*(1+tanh((V(5)-V(2)-VIH1-MUH1)/MUH1))) ,VOL1),VOH1)}
R11 11 3 50k
S32 53 2 32 2 S_32
.MODEL S_32 VSWITCH Roff=10e6 Ron=100 Voff=501mV Von=499mV
.ends AL8805
* =====================================================================
*
* (c) 2013 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 4949 Hedgcoxe Road, Suite 200, Plano, TX 75024, USA
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=23/07/2015
*VERSION=1
Q1 5 8 6 BCRNPN
R1 1 8 20K TC1=0.2m
R2 6 4 95 TC1=2m
Rshort23 2 3 10u
Rshort35 3 5 10u
D1 8 9 BCRdiode
D2 9 4 BCRdiode
.ENDS
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=23/07/2015
*VERSION=1
.SUBCKT BCR421UW6 1 2 3 4 5 6
Q1 5 8 6 BCRNPN
R1 1 8 1.5K TC1=0.2m
R2 6 4 95 TC1=2m
Rshort23 2 3 10u
Rshort35 3 5 10u
D1 8 9 BCRdiode
D2 9 4 BCRdiode
.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004
.model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=3 XTI=10)
.ENDS
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=23/07/2015
*VERSION=1
.SUBCKT BCR421UW6 1 2 3 4 5 6
Q1 5 8 6 BCRNPN
R1 1 8 1.5K TC1=0.2m
R2 6 4 95 TC1=2m
Rshort23 2 3 10u
Rshort35 3 5 10u
D1 8 9 BCRdiode
D2 9 4 BCRdiode
.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004
.model BCRdiode D(IS=10f RS=.01 N=1.05 IKF=1m CJO=.5p M=0.3 VJ=0.7
+ BV=3 XTI=10)
.ENDS
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=5OCT2011
*VERSION=1
.SUBCKT AL5802 1 2 3 4 5 6
Q1 1 3 6 T2
Q2 3 5 4 T1
R1 2 3 10K TC1=-4E-3
.MODEL T2 NPN IS=2.6E-14 NF=1 BF=300 ISE=4.5E-15 NE=1.5
+ BR=5 ISC=2E-14 NC=1.3 NR=1 CJC=5.6E-12 MJC=0.24 VJC=0.4
+ CJE=13.49E-12 MJE=0.37 VJE=0.75
.MODEL T1 NPN IS=1E-14 NF=1 BF=150 ISE=8E-15 NE=1.5
+ BR=1.5 ISC=1.2E-13 NC=1.5 NR=1 CJC=5.279E-12 MJC=0.28 VJC=0.5
+ CJE=8.92E-12 MJE=0.36 VJE=0.73
.ENDS
.SIMULATOR DEFAULT
.SUBCKT BCR401UW6 1 6 2 5 3 4
Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 91 TC=3.5m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode
.ENDS
*TITLE=BCR402UW6
*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
*PIN ORDER 1:GND 2:OUT 3:OUT 4:VS 5:OUT 6:Rext
.SUBCKT BCR402UW6 1 6 2 5 3 4
Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 44 TC=3.5m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode
.ENDS
*TITLE=BCR405UW6
*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.SUBCKT BCR405UW6 1 6 2 5 3 4
Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 16.5 TC=4m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode
.ENDS
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=23/07/2015
*VERSION=1
Q1 5 8 6 BCRNPN
R1 1 8 20K TC1=0.2m
R2 6 4 95 TC1=2m
Rshort23 2 3 10u
Rshort35 3 5 10u
D1 8 9 BCRdiode
D2 9 4 BCRdiode
.ENDS
.SIMULATOR DEFAULT
*TITLE=ZXRE060 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=3rd March 2011
*VERSION=1
*PIN_ORDER 1:PGND, 2:GND, 3:IN, 4:FB, 5:OUT
*
.subckt ZXRE060 PGND GND IN FB OUT
* pins-----------1----2----3----4---5
*
*Voltage reference with temperature effect
E1 REFG 1 value={(0.6+1.72e-5*(TEMP-25)-1e-7*(TEMP-
25)**2)*(0.5+0.5*tanh(4*(V(VCCL)-1.5)))}
I1 VCCL 1 0.48m ; Supply current
R1 REFG inm 48k
R2 FB inp 48k
C1 inm inp 0.2p
I3 VCCL inp 45n ; input bias current
I4 VCCL inm 45n
*
*First amplifier, limited to internal 2V supply
E2 E2out 1 value={tanh(11.52*(V(inp)-V(inm)))}
R7 E2out C3p 1
C3 C3p 1 250n ; 600kHz first breakpoint
R3 C3p int 10k
I2 VCCL int 2.5u
C2 int 1 6p ; 2MHz second breakpoint
*Second amplifier: transconductance
*with sink current output voltage limit of 0
*source current output voltage limit of 2V
G1 G1out 1 value={11e-6*(1-tanh(19.3*(v(int)-
v(Q2e))))*tanh(10*max((V(G1out)-V(1)),0))}
G2 VCCL G1out value={11e-6*(1+tanh(19.3*(V(int)-V(Q2e))))*tanh(10*max(2-
(V(G1out)-V(1)),0))}
*
*Output Stage
Q1 Q1c G1out Q2b 1 NPNCT
R4 VCCL Q1c 250
R5 Q2b PGNDL 50k
Q2 OUTL Q2b Q2e 1 NPNCT 5
R6 Q2e PGNDL 2.56
*
L1 IN VCCL 2n
L2 GND 1 2n
L3 OUT OUTL 2n
L4 PGND PGNDL 2n
*Output transistor model from CT
.model NPNCT NPN
+ is = 2.265f
+ nf = 1.000
+ ise = 6.055f
+ ne = 1.562
+ bf = 190.0
+ ikf = 28.71m
+ vaf = 22.83
+ nr = 1.008
+ isc = 1.00000e-24
+ nc = 1.543
+ br = 34.83
+ ikr = 1.250m
+ var = 19.13
+ rb = 267.9
+ irb = 1.250m
+ rbm = 100.0m
+ re = 802.9m
+ rc = 164.1m
+ cje = 163.1f
+ vje = 1.200
+ mje = 151.0m
+ tf = 70.00p
+ xtf = 10.00
+ vtf = 30.00
+ itf = 200.0m
+ ptf = 34.00
+ cjc = 380.6f
+ vjc = 410.0m
+ mjc = 360.0m
+ xcjc = 50.00m
+ tr = 6.00n
+ cjs = 525.2f
+ vjs = 401.0m
+ mjs = 179.2m
+ xtb = 200.0m
+ xti = 5.100
+ eg = 1.110
+ fc = 950.0m
.ends ZXRE060
*
* (c) 2011 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*TITLE=ZXCT1030 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=14th June 2010
*VERSION=1
*PIN_ORDER 1:VCC, 2:VS-, 3:VS+, 4:GND, 5:COMPIN, 6:REF, 7:OUT, 8:COMPOUT
*
.subckt ZXCT1030 VCC VS- VS+ GND COMPIN REF OUT COMPOUT
* pins------------1--2----3---4---5------6---7----8
*
*Voltage reference
R1 REFG REF 34
V1 REFG GND 1.24
*
* Current sense amplifier limited by supply voltage
R2 GND VCC 58k ;quiescent current at 5V
R3 VS- AIN- 100k ;input filter
C1 VS+ AIN- 1p ;input filter
G1 VS+ OUT VALUE={ max(V(VS+)-V(AIN-),0)/150*tanh ( 20*max(V(VS+)-1.1-
V(OUT),0) ) }
R4 OUT GND 1.5k ;output resistance
*
*Comparator with VS- undervoltage detection and limited by supply voltage
E2 DELTA GND VALUE = { V(OUT)-V(COMPIN)+0.015*V(E3OUT) }
R5 DELTA COMPINT 1k ; delay filter
C2 COMPINT GND 150p ; delay filter
E3 E3OUT GND VALUE={ 0.5*(1+tanh(V(COMPINT)*10000)) }
E4 S1IN GND VALUE={ ( V(E3OUT)+tanh(20*max(2.1-V(VS-),0)) )*tanh(20*max(V(VCC)-
2.1,0)) }
*
*Output transistor open collector
S1 COMPOUT GND S1IN GND _S1
.MODEL _S1 VSWITCH Roff=10e6 Ron=300 Voff=0.25 Von=0.75
*
.ends ZXCT1030
*
* (c) 2010 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*
*Zetex ZXCT1080 Spice Model v2.0 Last Revised 28/04/08
*
.SUBCKT ZXCT1080 1 2 3 4 5
*
*Pins = Gnd, Vcc, S+, S-, Vout
*
R1 2 1 1E6
R2 4 1 1E8
R3 13 14 1000
R4 15 5 Rmod1 3.5
R5 16 12 9
R6 12 1 Rmod2 1
R7 3 1 1E6
R8 21 22 Rmod3 1
C1 14 1 3E-10
E1 16 1 value={((V(3)-V(4))*100)+(V(3)/466*(V(3)-V(4))+((V(2)-5)/100)+0.025+
(V(21)*10))}
E2 13 1 value={V(12)-((V(12)-V(2))*(TANH((V(12)-V(2))*110)+1)/2)}
E3 15 1 value={V(14)*((TANH(V(14)*100)+1)/2)}
I1 1 21 1
V1 1 22 1
.MODEL Rmod1 RES (TC1=6e-3 )
.MODEL Rmod2 RES (TC1=5e-6 )
.MODEL Rmod3 RES (TC1=5e-5 )
.ENDS ZXCT1080
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*TITLE=ZXCT1010 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=14th July 2010
*VERSION=1
*PIN_ORDER 2:GND, 3:OUT, 4:S+, 5:S- (Pin 1 is NC)
*
.subckt ZXCT1010 GND OUT S+ S-
* pins------------2---3--4--5
*
R1 S- FILT 100k ;input filter
C1 S+ FILT 20p ;input filter
R2 S+ GND 1Meg ;quiescent current at 5V
* Output as a voltage: first part of expression limits resonse to zero for
negative input
* tanh function limits output when supply is less than 1.1V above Vout
E1 E1OUT GND VALUE={ max(V(S+)-V(FILT),0)*tanh( 20*max(V(S-)-1.1-V(OUT),0) ) }
R3 E1OUT GND 1Meg
* Transconductance = 1/100 A/V, with temperature dependence
G1 S+ OUT VALUE={(V(E1OUT) - V(GND))*(1/100)*(1.01-0.0003*TEMP-6e-6*(TEMP**2)-5e-
8*(TEMP**3)+2.7e-10*(TEMP**4))}
.ends ZXCT1010
*
*
* (c) 2010 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*TITLE=ZXCT1082 MACROMODEL
*ORIGIN=DZSL_AG_GS
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*DATE=1st Sept 2011
*VERSION=2
*PIN_ORDER 1:OUT 2:GND, 3:S+, 4:S-, 5:VCC
*Does not include temperature dependence of offset error, gain or input current.
*Includes roughly approximated temperature effect of low voltage operating knee of
VS- and VCC.
*
*Zetex ZVN4424Z Spice Model v1 Last Revised 28/7/08
*
.SUBCKT ZVN4424Z 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 N4424AM
M2 6 2 8 8 N4424AMS
RG 4 2 35
RD 3 6 3.6
RS 8 5 0.15
RL 3 5 240E6
D1 5 3 N4424AD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 145E-12
C2 2 3 11E-12
C3 15 14 235E-12
C4 16 8 226E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1 VOFF=2
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2 VOFF=1
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-4
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-4 VOFF=-3
.MODEL N4424AM NMOS VTO=1.3 IS=1E-15 KP=0.85
+CBD=66.2E-12 PB=1
.MODEL N4424AMS NMOS VTO=.86 IS=1E-15 KP=0.0085
+CBD=.66E-12 PB=1
.MODEL N4424AD D IS=5.516E-13 RS=.2084 N=1.0078
.ENDS ZVN4424Z
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*NMOS
.SUBCKT DMC3018LSD_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.005805
RS 30 3 0.001
RG 20 2 1.32
CGS 2 3 6.922E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 9.2E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028
+ TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200
.MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267
.MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011
VJ = 0.4558 M = 0.5515
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3018LSD_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02496
RS 30 3 0.001
RG 20 2 11.1
CGS 2 3 8.938E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8.92E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583
.MODEL DLIM D IS = 0.0001
.ENDS
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=22/02/2005
*VERSION=2
*PIN_ORDER D G S
*
.SUBCKT ZXMN2A02X8 30 40 50
M1 6 2 7 7 Nmod L=1.16E-6 W=2.3
M2 7 2 7 6 Pmod L=1.3E-6 W=1.3
RG 4 2 1
RIN 2 5 1E12
RD 3 6 Rdmod 0.0045
RS 7 5 Rdmod 0.01
RL 3 5 3E9
C1 2 5 10E-12
C2 3 2 5E-12
D1 5 3 Dbodymod
LD 3 30 1.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16
+VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9
+CJO=450e-12 BV=22)
.MODEL Rdmod RES (TC1=3e-3 TC2=6E-6)
.ENDS
*
*$
*
.MODEL FZTA42 NPN IS =5E-14 NF =1 BF =230 IKF=250E-3
+VAF=610 ISE=9E-15 NE =1.28 RCO=75 GAMMA=3.1E-7
+NR =1 BR =5 VAR=45 ISC=5e-12 NC =1.3
+RB =7 RE =0.07 RC =0.07 QUASIMOD=1
+CJC=9.26E-12 MJC=0.241 VJC=0.3905 CJE=68.6E-12
+TF =1.1E-9 TR =0.9e-6 XTB=1.4
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTN5551Z NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=18/09/2014
*VERSION=1
.SUBCKT DMG4406LSS 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 5E-3
RS 23 3 Rmod1 4E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 1250E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1250E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.0015
LS 30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2.1 TOX=5.8E-8 NSUB=3E+16 KP=130 NFS=1E+12 IS=.5E-15
N=10)
.MODEL DCGD D (CJO =260E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 1E-12 N=1.025 RS=0.002 BV=35 CJO=400E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6)
.ENDS
*DIODES_INC_SPICE_MODEL PD3Z284C5V6
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=02/10/15
*VERSION=1
*PINS 1=A 2=K
.SUBCKT PD3Z284C5V6 1 2
* Terminals A K
D1 1 2 DF
DR 3 1 DR
VZ 2 3 3
.MODEL DF D ( IS=24f RS=.3 N=1.1
+ CJO=84p VJ=0.66 M=0.330 TT=50.1n BV=5.7 IBV=1m TBV1=.281m)
.MODEL DR D ( IS=8f RS=12k N=2 EG=1.4)
.ENDS
.LIB B540C
*
.MODEL B540C D (
+LEVEL = 1 IS = 1.5672e-06 RS = 0.0209949
+N = 1.01362 IBV = 0.0001 CJO = 8.98694e-10
+VJ = 0.396195 MJ = 0.457747 FC = 0.5
+XTI = 0.000352915 EG = 0.750278 TRS1 = 0.00406277
+TRS2 = 2.17553e-07 BV = 50 TT = 0 )
*
.ENDL B540C
*BAS70LP;Schottky rectifier
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11NOV2011
*VERSION=1
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=10AUG2011
*VERSION=2
*
.MODEL DFLS130L D(IS=10U RS=58m N=0.88 BV=30 IBV=0.36m NBV=150
+ EG=0.62 ISR=30u CJO=396.4p VJ=0.31 M=0.48 TBV1=-0.007 TRS1=0.0045)
*$
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=16/12/2014
*VERSION=1.1
*
.SUBCKT DFLS2100 1 2
D1 1 2 Dsch
D2 1 2 Dpn
.MODEL Dsch D (IS=4n RS=.2 BV=110 IBV=50u CJO=88p M=.4 VJ=.55 N=1.05 IKF=60m
TRS1=.006 TT=15n EG=.8)
.model Dpn D(IS=1p IKF=100 BV=110 TT=50n EG=1.05 RS=.028 ISR=1n)
.ENDS
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=13/10/2009
*VERSION=1
*
.MODEL PD3S230L D IS=1.07E-5 N=1 ISR=7E-6 NR=1 BV=33
+ IBV=1E-4 NBV=5 IBVL=6E-6 NBVL=200 RS=0.035 CJO=220E-12
+ VJ=0.33 M=0.40 EG=0.6 XTI=2 TRS1=6E-3
*
*$
*DIODES_INC_SPICE_MODEL_PDS3200
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=30/06/2014
*VERSION=1
*
*Zetex PDS360 Spice Model v1.0 Last Revised 20/02/09
*
.MODEL PDS360 D IS=0.7E-7 N=1.02 ISR=0.94E-7 NR=1.1 BV=63 IBV=2E-4
+ NBV=2 IBVL=8E-8 NBVL=300 RS=0.034 CJO=390E-12 VJ=1.1 M=0.53
+ EG=0.74 XTI=2 TRS1=4e-3
*
*$
*
* (c) 2009 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*PDS5100H Spice Model v2.0 Last Revised 05/12/2014 Diodes Inc SCHOTTKY BARRIER
RECTIFIER
*SIMULATOR=SPICE3
*DIODES_INC_SPICE_MODEL_PDS560
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=4/08/2014
*VERSION=1
*SDM1L30BLP Spice Model v1.0 Last Revised 04/10/2014 Diodes Inc Surface Mount
Schottky Bridge
*
*Zetex PDS760 Spice Model v1.0 Last Revised 24/02/09
*
.MODEL PDS760 D IS=2.1E-7 N=1.02 ISR=2.6E-7 NR=1.1 BV=63 IBV=2E-4
+ NBV=2 IBVL=5.5E-7 NBVL=350 RS=0.016 CJO=1060E-12 VJ=1.1 M=0.53
+ EG=0.74 XTI=2 TRS1=4e-3
*
*$
*
* (c) 2009 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*SRC=B0520WS;DI_B0520WS;Schottky rectifier
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=7OCT2011
*VERSION=1
.SIMULATOR DEFAULT
SDM2U30CSP Spice Model v1.0 Last Revised 8/11/2015 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SDM02U30LP3 D ( IS=10.49u RS=43.16m BV=100.00 IBV=200.00u
+ CJO=375.0p M=333.0m N=1.146 TT=21.6n EG=480.0m VJ=600.0m )
*SBRT20U50SLP Spice Model v1.0 Last Revised 04/16/2014 Diodes Inc Trench SUPER
BARRIER RECTIFIER
*SBRT10U50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT10M50SP5 Spice Model v1.0 Last Revised 11/06/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT5A50SAF Spice Model v1.0 Last Revised 04/11/2014 Diodes Inc Trench SUPER
BARRIER RECTIFIER
*SBRT3U40P1 Spice Model v1.0 Last Revised 05/28/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT60U100CT Spice Model v1.0 Last Revised 04/15/2014 Diodes Inc Trench SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT20M60SP5 Spice Model v1.0 Last Revised 05/23/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT20U60SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT15U100SP5 Spice Model v1.0 Last Revised 05/22/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT25M50SLP Spice Model v1.0 Last Revised 05/20/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT3U45SA Spice Model v1.0 Last Revised 04/22/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*SBRT3M40SA Spice Model v1.0 Last Revised 04/21/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*TITLE=SBRT30u45CT
*DATE=28/1/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.MODEL SBRT30U45CT D(IS=100u RS=.005 BV=48 IBV=110u CJO=4000p M=.6 VJ=.4 N=1.05
ISR=20n IKF=15 TRS1=4m XTI1=3 TT=85n EG=.51 NBV=200)
*SBRT5A50SA Spice Model v1.0 Last Revised 04/23/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*DIODES_INC_SPICE_MODEL SBR10U45SP5
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=3/10/2012
*VERSION=1
.MODEL SBR10U45SP5 D( IS=28E-6 RS=10m BV=46.0 IBV=300u N=.97 TT=10n EG=.48 TRS1=4m
CJO=12590p M=.8 VJ=.4)
*SBR1U150SA Spice Model v1.0 Last Revised 05/07/2014 Diodes Inc SURFACE MOUNT
SUPER BARRIER RECTIFIER
*TITLE: SBR1U40LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=27Apr2012
*VERSION=1
*PIN 1=Anode 2=Cathode
.SUBCKT SBR1U40LP 1 2
M1 3 4 5 5 NMOD
D1 5 3 DMOD
R1 1 4 1u
C1 3 5 1p
R2 1 5 1u
R3 3 2 1u
.MODEL NMOD NMOS(LEVEL=3 VTO=.24 TOX=90E-10 NSUB=6E+15 KP=40 NFS=.2E+12 RS=0.3)
.MODEL DMOD D(IS=5.7E-7 TT=3u N=1.74)
.ENDS
.SIMULATOR DEFAULT
* (c) 2012 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=02/07/2009
*VERSION=3
*PIN_ORDER anode cathode
*
.SUBCKT SBR3U20SA 1 2
D1 1 3 Dmod
R1 3 2 95
L1 3 2 1.8E-9
.MODEL Dmod D (IS=8E-5 N=1.1 ISR=5E-8 NR=1.0 BV=21 IBV=1E-3 NBV=5
+ IBVL=2E-6 NBVL=500 RS=0.015 CJO=3500E-12 VJ=0.38 M=0.7 EG=0.5 XTI=2
+ TRS1=0.003 TT=3e-9)
.ENDS
*
*$
.MODEL SBR3U40P1 D( IS=20E-6 RS=35m BV=41.0 IBV=70u N=1 TT=10n EG=.53 TRS1=5m
CJO=500p M=.6 VJ=.4)
.MODEL SBR4U130LP D (
+ IS=15.568E-6
+ N=1.031
+ RS=20e-3
+ IKF=257.62E-6
+ CJO=5.0982E-9
+ M=1.0812
+ VJ=68.681E-3
+ ISR=38.247E-9
+ NR=4.9950
+ BV=130.27
+ IBV=100.00E-6
+ XTI=2.89 )
*SBR60A300CT Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SBR60A300CT D ( IS=3.829u RS=25.27m BV=330.0 IBV=10.00
+ CJO=1.006n M=557.8m N=1.413 TT=25.00n EG=480.0m VJ=826.8m )
*SBR10U200P5 Spice Model v1.0 Last Revised 2/24/2015 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SBR10U200P5 D ( IS=35.49n RS=15.06m BV=220.0 IBV=10.00
+ CJO=1.190n M=412.1m N=1.366 TT=21.70n EG=480.0m VJ=61.27m )
*SBR40U300CTB Spice Model v1.0 Last Revised 12/17/2014 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SBR40U300CTB D ( IS=233.1n RS=16.34m BV=330.0 IBV=10.00
+ CJO=1.055n M=487.5m N=1.424 TT=33.00n EG=480.0m VJ=504.9m )
*TITLE=SBR1U400P1
*DATE=12/03/2012
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.MODEL SBR1U400P1 D(IS=70n RS=.05 BV=401 IBV=50u CJO=65p M=.41 VJ=.41 N=1.25
ISR=20n IKF=.51m TRS1=0 XTI1=3 TT=85n EG=.75 TIKF=.1)
*TITLE=SBR1U200P1
*DATE=5/02/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=2
.SUBCKT SBR1U200P1 1 2
D1 1 2 Dsch
D2 1 2 Dpn
.MODEL Dsch D(IS=55n RS=1.8 BV=201 IBV=50u CJO=355p M=.41 VJ=.41 N=1.05 ISR=20n
IKF=10m TRS1=.001 XTI1=3 TT=50n EG=.6 TIKF=.1)
.model Dpn D(IS=8p IKF=30m BV=250 N=1 TT=50n EG=1.12 RS=.008 ISR=.1n)
.ends
*SBR12U120P5 Spice Model v1.0 Last Revised 3/28/2016 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SBR12U120P5 D ( IS=3.440u RS=40.05m BV=135.0 IBV=10.00
+ CJO=3.462n M=3.523 N=1.047 TT=10.00n EG=480.0m VJ=682.4m )
*TITLE: SBR2U150SA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=16Dec2014
*VERSION=1
.SUBCKT SBR2U150SA 1 2
D1 1 2 Dsch
D2 1 2 Dpn
.MODEL Dsch D ( IS=4u RS=.3 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145 TT=17.3n
EG=.5 TRS1=3m NBV=10 IKF=200m)
.model Dpn D(IS=2p IKF=20000m BV=160 TT=50n EG=1.12 RS=.02 ISR=1n)
.ENDS
The SBR12U45LH uses SBR patented technology that offers ultra low VF to reduce
forward power loss and improve efficiency. Encapsulated in the new PDI-5SP package
with a 0.75mm low height profile and protruding leads for easy soldering, it is
specially suited for use as a bypass diode in solar panels.
*TITLE: SBR2U10LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Dec2014
*VERSION=1
.MODEL SBR1U30CSP D( IS=5.5u RS=45m BV=32 IBV=150.0u CJO=750p M=1 VJ=.45 N=1.05
TT=30n EG=.5 TRS1=5m IKF=85m)
*TITLE: SBR3150SB
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=16Dec2014
*VERSION=1
.SUBCKT SBR3150SB 1 2
D1 1 2 Dsch
D2 1 2 Dpn
.MODEL Dsch D ( IS=11u RS=.22 BV=160.0 IBV=150.0u CJO=951p M=0.333 N=1.145
TT=17.3n EG=.47 TRS1=2m NBV=10 IKF=120m)
.model Dpn D(IS=2p IKF=100 BV=160 TT=50n EG=1.1 RS=.011 ISR=1n)
.ENDS
*SBR3U60P1 Spice Model v1.0 Last Revised 04/29/2014 Diodes Inc SUPER BARRIER
RECTIFIER
*SBRT15U50SP5 Spice Model v1.0 Last Revised 10/30/2014 Diodes Inc TRENCH SUPER
BARRIER RECTIFIER
*SIMULATOR=SPICE3
*TITLE: SBR2U10LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Dec2014
*VERSION=1
.MODEL SBR1U30CSP D( IS=5.5u RS=50m BV=32 IBV=150.0u CJO=750p M=1 VJ=.45 N=1.05
TT=30n EG=.5 TRS1=5m IKF=85m)
*TITLE: SBR2U10LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=9Jun2014
*VERSION=1
.MODEL SBR2U10LP D( IS=26u RS=20m BV=11 IBV=150.0u CJO=790p M=0.65 VJ=.4 N=1.05
TT=50n EG=.5 TRS1=6m ISR=50u)
*
.MODEL SBR02U100LP D (
+ IS=37.999E-9
+ N=1.2423
+ RS=1.0042
+ IKF=6.4683E-3
+ CJO=138.07E-12
+ M=1.4985
+ VJ=.79033
+ ISR=7.0384E-12
+ NR=4.9950
+ BV=103
+ IBV=1.0000E-3
+ XTI=2.67 )
*SBR0230T5 Spice Model v1.0 Last Revised 1/12/2016 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SDM02U30LP3 D ( IS=54.13n RS=378.1m BV=50.00 IBV=10.00
+ CJO=237.7p M=526.0m N=1.032 TT=10.00n EG=480.0m VJ=12.71m )
*TITLE: SBR2U30P1
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Jan2012
*VERSION=2
*PIN 1=Anode 2=Cathode
***********************************************************************************
**********************************
*SRC=10A01;DI_10A01;Diodes;Si; 50.0V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A01 D ( IS=844n RS=2.06m BV=50.0 IBV=10.0u
+ CJO=277p M=0.333 N=2.06 TT=4.32u )
***********************************************************************************
**********************************
***********************************************************************************
**********************************
*SRC=10A02;DI_10A02;Diodes;Si; 100V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A02 D ( IS=844n RS=2.06m BV=100 IBV=10.0u
+ CJO=277p M=0.333 N=2.06 TT=4.32u )
***********************************************************************************
**********************************
***********************************************************************************
**********************************
*SRC=10A04;DI_10A04;Diodes;Si; 400V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A04 D ( IS=844n RS=2.06m BV=400 IBV=10.0u
+ CJO=277p M=0.333 N=2.06 TT=4.32u )
***********************************************************************************
**********************************
***********************************************************************************
**********************************
*SRC=10A05;DI_10A05;Diodes;Si; 600V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A05 D ( IS=844n RS=2.06m BV=600 IBV=10.0u
+ CJO=148p M=0.333 N=2.06 TT=4.32u )
***********************************************************************************
**********************************
***********************************************************************************
**********************************
*SRC=10A06;DI_10A06;Diodes;Si; 800V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A06 D ( IS=844n RS=2.06m BV=800 IBV=10.0u
+ CJO=148p M=0.333 N=2.06 TT=4.32u )
***********************************************************************************
**********************************
***********************************************************************************
**********************************
*SRC=10A07;DI_10A07;Diodes;Si; 1.00kV 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A07 D ( IS=844n RS=2.06m BV=1.00k IBV=10.0u
+ CJO=148p M=0.333 N=2.06 TT=4.32u )
***********************************************************************************
**********************************
***********************************************************************************
****************************************************
*SRC=1N4002G;DI_1N4002G;Diodes;Si; 100V 1.00A 2.00us Diodes Inc. Glass
Passivated Rectifier
.MODEL DI_1N4002G D ( IS=65.4p RS=42.2m BV=100 IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
***********************************************************************************
****************************************************
***********************************************************************************
****************************************************
*SRC=1N4003G;DI_1N4003G;Diodes;Si; 200V 1.00A 2.00us Diodes Inc. Glass
Passivated Rectifier
.MODEL DI_1N4003G D ( IS=65.4p RS=42.2m BV=200 IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
***********************************************************************************
****************************************************
***********************************************************************************
****************************************************
*SRC=1N4004G;DI_1N4004G;Diodes;Si; 400V 1.00A 2.00us Diodes Inc. Glass
Passivated Rectifier
.MODEL DI_1N4004G D ( IS=65.4p RS=42.2m BV=400 IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
***********************************************************************************
****************************************************
***********************************************************************************
****************************************************
*SRC=1N4005G;DI_1N4005G;Diodes;Si; 600V 1.00A 2.00us Diodes Inc. Glass
Passivated Rectifier
.MODEL DI_1N4005G D ( IS=65.4p RS=42.2m BV=600 IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
***********************************************************************************
****************************************************
***********************************************************************************
****************************************************
*SRC=1N4006G;DI_1N4006G;Diodes;Si; 800V 1.00A 2.00us Diodes Inc. Glass
Passivated Rectifier
.MODEL DI_1N4006G D ( IS=65.4p RS=42.2m BV=800 IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
***********************************************************************************
****************************************************
***********************************************************************************
****************************************************
*SRC=1N4007G;DI_1N4007G;Diodes;Si; 1.00kV 1.00A 2.00us Diodes Inc. Glass
Passivated Rectifier
.MODEL DI_1N4007G D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
***********************************************************************************
***************************************************
*TITLE=S1G-13-F
*DATE=19/11/2013
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.model S1G-13-F D(IS=.0005n RS=0.03 CJO=17p M=0.5 VJ=0.75 N=1.1 IKF=.15 ISR=.01u
+ BV=401 IBV=100u TT=150n EG=.95 TRS1=.1m)
*TITLE=PDR5K
*DATE=1/04/2015
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.MODEL PDR5K D(IS=1n RS=.006 BV=850 IBV=50u CJO=88p M=.4 VJ=.6 N=1.5 ISR=2n TRS1=0
XTI1=3 IKF=10 TT=2u EG=1.18)
*PD3R1600 Spice Model v1.0 Last Revised 04/02/2014 Diodes Inc SURFACE MOUNT
STANDARD RECTIFIER
***********************************************************************************
**********************************
*SRC=10A03;DI_10A03;Diodes;Si; 200V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A03 D ( IS=844n RS=2.06m BV=200 IBV=10.0u
+ CJO=277p M=0.333 N=2.06 TT=4.32u )
***********************************************************************************
**********************************
***********************************************************************************
****************************************************
*SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass
Passivated Rectifier
.MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
***********************************************************************************
****************************************************
*
* This model account for one of the two diodes contained in the
* BAS40-4 device. The other one is totally identical.
*
.LIB BAS40_04
*
.SUBCKT BAS40_04 A K
*
D1 A K BAS40_1
D2 A K1 BAS40_2
V1 K1 K DC 217e-3
*
.MODEL BAS40_1 D (
+LEVEL = 1 IS = 2.24014e-09 RS = 7.23547
+N = 1.02505 IKF = 0.255776
+CJO = 3.0881e-12 VJ = 119.67e-3 MJ = 183.18e-3
+FC = 0.5 XTI = 0.60541 EG = 0.75453
+TRS1 = 0.00733869 TRS2 = 1.45813e-05 IBV = 0.01
+BV = 40 TT = 6.02e-9 )
*
.MODEL BAS40_2 D (
+LEVEL = 1 IS = 5.04958e-11 RS = 0.00692754
+N = 1.10729 XTI = 1.45276 EG = 1.46766
+TRS1 = 0.0021771 TRS2 = 0.000729073 IKF = 0.0102054
+IBV = 0.01 BV = 1e3 TT = 0 )
*
.ENDS BAS40_04
*
.ENDL BAS40_04
*
*Zetex BAT54 Spice Model v1.0 Last Revised 25/04/00
*
.MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3
+XTI=2 EG=0.58
+CJO=12.4e-12 M=0.381 VJ=0.391
+BV=50 IBV=100e-6 ISR=431e-9 NR=4.99
*
*$
*
* (c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*BAT54LP Spice Model v1.0 Last Revised 08/04/2014 Diodes Inc SUPER BARRIER
RECTIFIER
*SIMULATOR=SPICE3
***********************************************************************************
********************************************************
*SRC=QSBT40;DI_QSBT40;Diodes;Si; 30.0V 0.200A 50.0ns Diodes Inc. Schottky Bus
- Single Device of Multiple
.MODEL DI_QSBT40 D ( IS=500n RS=0.211 BV=30.0 IBV=2.00u
+ CJO=10.0p M=0.333 N=1.70 TT=72.0n )
***********************************************************************************
********************************************************
***********************************************************************************
********************************************************
*SRC=SD101AWS;DI_SD101AWS;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky-
SD101AWS/BWS/CWS
.MODEL DI_SD101AWS D ( IS=230n RS=2.13 BV=60.0 IBV=200n
+ CJO=2.00p M=0.333 N=1.96 TT=1.44n )
***********************************************************************************
********************************************************
***********************************************************************************
********************************************************
*SRC=BAT54DW;DI_BAT54DW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky,
dual, one of two nodes
.MODEL DI_BAT54DW D ( IS=235n RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=1.28 TT=7.20n )
***********************************************************************************
********************************************************
*TITLE=SDM02U30LP3
*DATE=30/08/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.MODEL SDM02U30LP3 D(IS=.22u RS=2.2 BV=33 IBV=110u CJO=6p M=.33 VJ=.4 N=1 ISR=1u
IKF=100m TRS1=5m XTI1=3 TT=30n EG=.54 NBV=2)
*SDM02U30CSP Spice Model v1.0 Last Revised 8/31/2016 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SDM02U30CSP D ( IS=276.7n RS=424.6p BV=50.00 IBV=10.00
+ CJO=261.8p M=526.0m N=625.2p TT=1.627n EG=480.0m VJ=8.630m )
*SDM02M30LP3 Spice Model v1.0 Last Revised 8/31/2016 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SDM02M30LP3 D ( IS=25.07n RS=444.1p BV=50.00 IBV=10.00
+ CJO=45.92p M=357.3m N=285.5 TT=10.00n EG=480.0m VJ=1.309m )
*SRC=MSB15MH; DI_MSB15MH; Diodes Inc.; Si; 1000V 1.50A Diodes Bridge -- for
one element
*SRC=MSB25MH; DI_MSB25MH; Diodes Inc.; Si; 1000V 2.50A Diodes Bridge -- for
one element
***********************************************************************************
******
*SRC=ES2AA;DI_ES2AA;Diodes;Si; 50.0V 2.00A 25.0ns Diodes Inc. Fast
Rectifier
.MODEL DI_ES2AA D ( IS=267n RS=21.0m BV=50.0 IBV=5.00u
+ CJO=83.5p M=0.333 N=1.70 TT=36.0n )
***********************************************************************************
*****
***********************************************************************************
*****
SRC=ES2BA;DI_ES2BA;Diodes;Si; 100V 2.00A 25.0ns Diodes Inc. Fast
Rectifier
.MODEL DI_ES2BA D ( IS=267n RS=21.0m BV=100 IBV=5.00u
+ CJO=83.5p M=0.333 N=1.70 TT=36.0n )
***********************************************************************************
****
***********************************************************************************
****
*SRC=ES2CA;DI_ES2CA;Diodes;Si; 150V 2.00A 25.0ns Diodes Inc. Fast
Rectifier
.MODEL DI_ES2CA D ( IS=267n RS=21.0m BV=150 IBV=5.00u
+ CJO=83.5p M=0.333 N=1.70 TT=36.0n )
***********************************************************************************
******
***********************************************************************************
******
*SRC=ES2DA;DI_ES2DA;Diodes;Si; 200V 2.00A 25.0ns Diodes Inc. Fast
Rectifier
.MODEL DI_ES2DA D ( IS=267n RS=21.0m BV=200 IBV=5.00u
+ CJO=83.5p M=0.333 N=1.70 TT=36.0n )
***********************************************************************************
******
*DFLF1800 Spice Model v1.0 Last Revised 03/06/2014 Diodes Inc Fast Recovery
Rectifier
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=25Aug2016
*VERSION=1
.SUBCKT RS1MWF 1 2
D1 1 2 DF
D2 1 2 DR
.MODEL DF D ( IS=5p RS=.041 BV=1000 IKF=80u CJO=15p M=0.35 VJ=.65 N=1 TT=460n
EG=.7 TRS1=0.01m XTI=15)
.model DR D (N=10 ISR=6.5n BV=1010 IBV=100u EG=.8 RS=2 CJO=1p VJ=.65)
.ENDS
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=25Aug2016
*VERSION=1
.SUBCKT RS1MSWF 1 2
D1 1 2 DF
D2 1 2 DR
.MODEL DF D ( IS=.3p RS=.1 BV=1000 IKF=500u CJO=6p M=0.35 VJ=.65 N=1 TT=500n
EG=.7 TRS1=.01m XTI=16)
.model DR D(N=10 ISR=6.5n BV=1010 IBV=100u EG=.55 RS=2.6 CJO=1p VJ=.65)
.ENDS
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=25Aug2016
*VERSION=1
.SUBCKT RS1MSWFQ 1 2
D1 1 2 DF
D2 1 2 DR
.MODEL DF D ( IS=.3p RS=.1 BV=1000 IKF=500u CJO=6p M=0.35 VJ=.65 N=1 TT=500n
EG=.7 TRS1=.01m XTI=16)
.model DR D(N=10 ISR=6.5n BV=1010 IBV=100u EG=.55 RS=2.6 CJO=1p VJ=.65)
.ENDS
*SYM=HZEN
.SUBCKT DI_BZT52C13 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.4
.MODEL DF D ( IS=15.8p RS=1.24 N=1.10
+ CJO=51.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=1.26 N=0.814 )
.ENDS
***********************************************************************************
***********************************************
*SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C18S 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=25.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 )
.ENDS
***********************************************************************************
**********************************************
.ENDS
* (c) 2014 Diodes Inc
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=16/04/2014
*VERSION=1
.SIMULATOR DEFAULT
.ENDS
***********************************************************************************
*********************************************
*SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZENER
*SYM=HZEN
.SUBCKT DI_BZT52C3V9S 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.37
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=74.5 N=3.00 )
.ENDS
***********************************************************************************
*********************************************
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=1Mar2011
*VERSION=2
.SUBCKT DDZ8V2C 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.6
.MODEL DF D ( IS=25.1p RS=33.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=3.8 N=1 )
.ENDS
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=17/09/2014
*VERSION=1
.model DDZ9689T D(IS=.015p RS=.06 CJO=165p M=0.5 IKF=20m VJ=0.5 N=1.08 BV=5.8
NBVL=24 NBV=1.2 IBVL=.15m IBV=.4m TT=40n EG=1.1 TRS1=1.1m TBV1=.01m)
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2
.SUBCKT MMSZ5221B 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.65
*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2
.SUBCKT MMSZ5221B 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.65
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=23/12/2014
*VERSION=1
.model 1SMB5929B D(IS=1n RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=10u
BV=15 NBV=10 IBV=25m TT=40n EG=.84 TRS1=.1m)
.SIMULATOR DEFAULT
*TITLE=GDZ5V1LP3
*DATE=21/11/2013
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.model GDZ5V1LP3 D(IS=.21f RS=0.15 CJO=17p M=0.37 VJ=0.7 N=1 IKF=5m ISR=.05n
+ BV=5 IBV=100u TT=30n EG=1.12 TRS1=.1m)
*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2
.SUBCKT MMSZ5225B 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.3
*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2
.SUBCKT MMSZ5226B 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.6
*DIODES_INC_SPICE_MODEL ZENER
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Apr2013
*VERSION=2
.SUBCKT MMSZ5227B 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.9
.SUBCKT MMSZ5223B 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=18sep2013
*VERSION=1
.SUBCKT SMAZ15 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 14.2
.MODEL DF D ( IS=2.51p RS=.0780 N=1.15
+ CJO=100p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.02f RS=3.8 N=1 )
.ENDS
.SIMULATOR DEFAULT
*TITLE=GDZ5V6LP3
*DATE=25/01/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
*DIODES_INC_SPICE_MODEL PD3Z284C5V6
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=02/12/15
*VERSION=1
*PINS 1=A 2=K
.SUBCKT DDZ9684 1 2
* Terminals A K
D1 1 2 DF
DR 3 1 DR
VZ 2 3 2.25
.MODEL DF D ( IS=1.5f RS=.22 N=1
+ CJO=119p VJ=0.750 M=0.330 TT=50.1n BV=5.1 IBV=3u TBV1=.31m TRS1=3m NBV=1.8)
.MODEL DR D ( IS=80f RS=200 N=2 EG=1.4)
.ENDS
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Jan2016
*VERSION=1
.SUBCKT DDZ3V6BSF 1 2
* Terminals A K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=10f RS=.5 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=3.35 IBV=.1u TBV1=-1m)
.MODEL DR D ( IS=5f RS=6k N=10 BV=.5 IBV=1f ISR=1f Eg=1.4 TBV1=-6m)
.ENDS
.model GDZ6V8LP3 D(IS=.2f RS=.05 CJO=17p M=0.37 VJ=0.7 N=.9 IKF=.1m ISR=.05n
+ BV=6.71 IBV=100u TT=30n EG=1.14 TRS1=.01m)
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=26Feb2016
*VERSION=1
.SUBCKT DDZ6V8B 1 2
* Terminals A K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=30f RS=.22 N=1.13
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=6.5 IBV=1u TBV1=.3m NBV=.8)
.MODEL DR D ( IS=5f RS=4k N=10 BV=4.5 IBV=1f ISR=1f Eg=1.4 TBV1=-1.22m NBV=3)
.ENDS
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=26Feb2016
*VERSION=1
.SUBCKT DDZ6V8BSF 1 2
* Terminals A K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=30f RS=.22 N=1.13
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=6.5 IBV=1u TBV1=.3m NBV=.8)
.MODEL DR D ( IS=5f RS=4k N=10 BV=4.5 IBV=1f ISR=1f Eg=1.4 TBV1=-1.22m NBV=3)
.ENDS
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=13May2016
*VERSION=1
.SUBCKT DDZ9V1BSF 1 2
* Terminals A K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=55f RS=.075 N=1.15
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=8.6 IBV=10u TBV1=.4m IKF=30m EG=1.16)
.MODEL DR D ( IS=5f RS=6k N=10 BV=7 IBV=1p ISR=1f Eg=.05 TBV1=-1m)
.ENDS
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=13Jun2016
*VERSION=1
.SUBCKT DDZ4V3BSF 1 2
* Terminals A K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=10f RS=.5 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=4 IBV=.6u TBV1=-1m)
.MODEL DR D ( IS=5f RS=6k N=10 BV=.5 IBV=1f ISR=1f Eg=1.4 TBV1=-6m)
.ENDS
*TITLE=GDZ3V9LP3
*DATE=21/11/2013
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
*
.ENDS
(c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=1/04/2014
*VERSION=1
.ENDS
* (c) 2016 Diodes Inc
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=8Aug2016
*VERSION=1
.SUBCKT DDZ4V7ASF 1 2
* Terminals A K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=15f RS=.15 N=1.07
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=4.31 IBV=6u TBV1=.1m ISR=50f)
.MODEL DR D ( IS=10f RS=3k N=10 BV=2.5 IBV=10p ISR=150p Eg=1.4 TBV1=-.1m)
.ENDS
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=07Sep2016
*VERSION=1
.SUBCKT DDZ17 1 2
* Terminals A K
D1 1 2 DF
DZ 1 2 DR
.MODEL DF D ( IS=55f RS=.075 N=1.15
+ CJO=46.3p VJ=0.750 M=0.330 TT=10.1n BV=16.85 IBV=10u TBV1=.4m IKF=30m EG=1.16)
.MODEL DR D ( IS=5f RS=6k N=10 BV=16 IBV=1p ISR=1f Eg=.08 TBV1=-1m)
.ENDS
***********************************************************************************
***********************************************************
*SRC=MMBD4448HT;DI_MMBD4448HT;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching
.MODEL DI_MMBD4448HT D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
***********************************************************************************
*********************************************************
***********************************************************************************
***********************************************************
*SRC=MMBD4448HTA;DI_MMBD4448HTA;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTA D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
***********************************************************************************
***********************************************************
***********************************************************************************
***********************************************************
*SRC=MMBD4448HTC;DI_MMBD4448HTC;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTC D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
***********************************************************************************
***********************************************************
***********************************************************************************
***********************************************************
*SRC=MMBD4448HTS;DI_MMBD4448HTS;Diodes;Si; 80.0V 0.500A 1.50ns
Diodes Inc. Switching - One node of two
.MODEL DI_MMBD4448HTS D ( IS=1.12n RS=84.0m BV=80.0 IBV=100n
+ CJO=2.92p M=0.333 N=1.70 TT=2.16n )
***********************************************************************************
***********************************************************
*SRC=MMBD5004A/C/S; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode
D1 1 = A 2 = C DI_MMBD5004ACS
.MODEL DI_MMBD5004ACS D
+ IS = 10n
+ N = 2.02
+ BV = 400
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.6p
+ VJ = 60m
+ M = 35m
+ FC = 0.5
+ TT = 50n
*SRC=BAV5004LP; 400V 0.3A 50.0ns Diodes Inc. High Voltage Switching Diode
D1 1 = A 2 = C DI_BAV5004LP
.MODEL DI_BAV5004LP D
+ IS = 10n
+ N = 2.15
+ BV = 400
+ IBV = 1.00u
+ RS = 0.6
+ CJO = 0.90p
+ VJ = 55m
+ M = 28m
+ FC = 0.5
+ TT = 50n
D1 1 = A 2 = C DI_1SS361UDJ
.MODEL DI_1SS361UDJ D
+ IS = 2.0n
+ N = 1.83
+ BV = 80
+ IBV = 1.00u
+ RS = 0.7
+ CJO = 0.71p
+ VJ = 5m
+ M = 9m
+ FC = 0.5
+ TT = 4n
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=2/07/2015
*VERSION=1
*
.MODEL DLLFSD01LP3 D(IS=30p RS=.6 N=1 BV=105 IBV=0.36m IKF=1u
+ EG=1.1 ISR=.8n CJO=.5p VJ=0.4 M=0.48 TRS1=0.0001 TT=2n)
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=13/11/2013
*VERSION=1
.model BAS116LP3 D(IS=4f RS=0.1 CJO=2.37p M=0.4 VJ=0.6 ISR=.005n N=1.05 IKF=1m
+ BV=85 IBV=100u TT=40n EG=1.14 TRS1=.1m)
D1 1 = A 2 = C DI_BAS116UDJ
.MODEL DI_BAS116UDJ D
+ IS = 1.1p
+ N = 1.42
+ BV = 400
+ IBV = 1.00u
+ RS = 0.350
+ CJO = 1.95p
+ VJ = 60m
+ M = 173m
+ FC = 0.5
+ TT = 50n
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=27/11/09
*VERSION=2
*PIN_ORDER D G S
*
.SUBCKT ZXMS6001N3 1 2 3
M1 31 4 33 33 Mmod1
M2 4 4 43 3 Mmod2 M=25
M3 41 37 38 38 Mmod3
M4 16 45 17 3 Mmod2 M=200
M5 15 16 17 3 Mmod2 M=200
M6 14 15 3 3 Mmod2 M=400
R1 2 4 20E3
R2 41 31 0.01
R3 3 33 0.25
R4 1 3 10E6
R5 37 3 20E3
R6 2 13 15E3
R7 2 3 26E3
R8 12 10 30E3
R9 12 11 28E3
R10 11 3 2.3E3
R11 13 16 35E3
R12 13 15 35E3
R13 17 3 2.5E3
R14 4 14 300
R15 18 45 50E3
R16 44 12 1.2E3
C1 4 33 400E-12
C2 4 1 75E-12
C3 35 36 400E-12
C4 16 3 200E-12
S1 43 3 41 42 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 42 3 2 3 0.22
E2 34 33 4 33 1
E3 18 19 11 10 100
E4 44 3 2 3 1
E6 36 3 31 4 1
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 3 13 Dmod5
D6 10 3 Dmod6
D7 37 41 Dmod7
D8 3 1 Dmod8
D9 3 45 Dmod2
V1 1 41 0
*
*Distributed Thermal Model for device mounted on minimum copper Rth=208C/W
*To enable thermal feedback for transient analysis only change **G1 to G1
*Transient junction temperature may be observed at node 100 where 1V=1C
*
**G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) }
R21 20 21 0.07
R22 21 22 0.17
R23 22 23 0.37
R24 23 24 1.34
R25 24 25 2.80
R26 25 26 11.19
R27 26 27 48.10
R28 27 28 78.30
R29 28 29 65.99
C21 20 21 7.45E-5
C22 21 22 2.98E-4
C23 22 23 8.94E-4
C24 23 24 2.23E-3
C25 24 25 1.97E-2
C26 25 26 3.58E-2
C27 26 27 5.61E-2
C28 27 28 4.47E-1
C29 28 29 1.36
V2 29 3 25
E5 19 3 22 29 0.201
*Junction temperature at node 20 is 1V/C
*Ambient temperature set V2 at 1V per 1C
*
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2 )
.MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5)
.MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150)
.MODEL Dmod1 D (RS=11 BV=11)
.MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
.MODEL Dmod3 D (RS=10 BV=12)
.MODEL Dmod4 D (RS=10 BV=4)
.MODEL Dmod5 D (RS=10 BV=7)
.MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
.MODEL Dmod7 D (RS=1 BV=65)
.MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12)
.MODEL Smod1 VSWITCH RON=6000 ROFF=1E6 VON=0.5 VOFF=-1.5
.MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5
.MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/12/2009
*VERSION=2
*PIN_ORDER D G S
*
.SUBCKT ZXMS6004FF 1 2 3
M1 31 40 33 33 Mmod1
M2 4 4 21 3 Mmod2 M=40
M3 41 37 38 38 Mmod3
M6 14 51 3 3 Mmod2 M=400
R1 2 4 60E3
R2 41 31 0.01
R3 3 33 0.35
R4 41 3 10E6
R5 37 3 20E3
R7 2 12 600
R8 12 10 50E3
R10 50 3 1000
R11 12 52 98E3
R12 3 52 2E3
R13 51 52 120E3
R14 4 14 500
R15 110 111 Rmod1 1
C1 4 33 200E-12
C2 4 31 50E-12
C3 35 31 200E-12
C4 52 3 50E-12
S1 21 3 41 22 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 22 3 2 3 0.22
E2 34 33 4 33 1
E3 19 3 103 109 4E-3
E4 19 50 value={V(10)-V(52)-0.50}
E5 51 3 value={V(12)*((TANH(V(50)*100)+1)/2)}
E6 4 40 100 3 4.2e-3
E7 109 3 value={(V(110)*1000)+27}
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 13 3 Dmod6
D6 10 13 Dmod6
D7 37 41 Dmod7
D8 3 41 Dmod8
V1 1 41 0
V2 3 111 1
I1 3 110 1
*
* Distributed Thermal Model 15mm x 15mm x 1.6mm FR4 1oz Cu
* To enable thermal feedback for transient analysis only change **G1 to G1
* Transient junction temperature may be observed at node 100 where 1V=1C
*
**G1 3 100 value={ABS( I(V1) * V(1,3) ) }
R21 100 101 0.23
R22 101 102 0.275
R23 102 103 1.265
R24 103 104 2.875
R25 104 105 10.925
R26 105 106 28.175
R27 106 107 29.67
R28 107 108 11.73
R29 108 109 67.85
C21 100 101 2.17E-5
C22 101 102 1.09E-4
C23 102 103 2.37E-4
C24 103 104 6.61E-4
C25 104 105 2.563E-3
C26 105 106 6.744E-3
C27 106 107 2.7974E-2
C28 107 108 0.8525
C29 108 109 0.8843
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.35 IS=1E-15 KP=10)
.MODEL Mmod2 NMOS (LEVEL=1 VTO=2.7 )
.MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.001 RS=10)
.MODEL Dmod1 D (RS=11 BV=11)
.MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
.MODEL Dmod3 D (RS=10 BV=12)
.MODEL Dmod4 D (RS=10 BV=6)
.MODEL Dmod5 D (RS=10 BV=7)
.MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
.MODEL Dmod7 D (RS=1 BV=65)
.MODEL Dmod8 D (IS=1E-13 RS=0.05 N=1.005 BV=90 CJO=212E-12 M=0.5 VJ=0.75)
.MODEL Smod1 VSWITCH RON=100 ROFF=1E6 VON=0.5 VOFF=0
.MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5
.MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5
.MODEL Rmod1 RES (TC1=1e-3)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=12/11/2009
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT BSP75G 1 2 3
M1 31 4 33 33 Mmod1
M2 4 4 43 3 Mmod2 M=25
M3 41 37 38 38 Mmod3
M4 16 18 17 3 Mmod2 M=200
M5 15 16 17 3 Mmod2 M=200
M6 14 15 3 3 Mmod2 M=400
R1 2 4 20E3
R2 41 31 0.01
R3 3 33 0.25
R4 1 3 10E6
R5 37 3 20E3
R6 2 13 15E3
R7 2 12 1.7E3
R8 12 10 30E3
R9 12 11 28E3
R10 11 3 2300
R11 13 16 35E3
R12 13 15 35E3
R13 17 3 2.5E3
R14 4 14 300
R15 18 45 50E3
C1 4 33 200E-12
C2 4 1 60E-12
C3 35 33 200E-12
S1 43 3 41 42 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 42 3 2 3 0.22
E2 34 33 4 33 1
E3 18 19 11 10 100
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 3 13 Dmod5
D6 10 3 Dmod6
D7 37 41 Dmod7
D8 3 1 Dmod8
D9 3 45 Dmod2
*
*Distributed Thermal Model for device mounted on minimum copper Rth=208C/W
*To enable thermal feedback for transient analysis change **G1 to G1
V1 1 41 0
**G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) }
R21 20 21 0.07
R22 21 22 0.17
R23 22 23 0.37
R24 23 24 1.34
R25 24 25 2.80
R26 25 26 11.19
R27 26 27 48.10
R28 27 28 78.30
R29 28 29 65.99
C21 20 21 7.45E-5
C22 21 22 2.98E-4
C23 22 23 8.94E-4
C24 23 24 2.23E-3
C25 24 25 1.97E-2
C26 25 26 3.58E-2
C27 26 27 5.61E-2
C28 27 28 4.47E-1
C29 28 29 1.36
V2 29 3 25
E4 19 3 22 29 0.201
*Junction temperature at node 20 is 1V/C
*Ambient temperature set V2 at 1V per 1C
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2)
.MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5 CGDO=5E-7 CGSO=5E-7)
.MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150
+ CGDO=5E-7 CGSO=5E-7)
.MODEL Dmod1 D (RS=11 BV=11)
.MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
.MODEL Dmod3 D (RS=10 BV=12)
.MODEL Dmod4 D (RS=10 BV=4)
.MODEL Dmod5 D (RS=10 BV=7)
.MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
.MODEL Dmod7 D (RS=1 BV=65)
.MODEL Dmod8 D (IS=6E-13 RS=.13 N=1.01 BV=82 CJO=200E-12)
.MODEL Smod1 VSWITCH RON=3.9E3 ROFF=1E6 VON=0.5 VOFF=-1.5
.MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5
.MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMN3A04K 1 2 3
M11 20 21 22 22 Nnmod1 L=0.7E-6 W=2.183
M12 22 21 22 20 Pnmod1 L=1.2E-6 W=2.183
RG1 26 27 1.1
RIN1 21 22 1E12
RD1 20 24 Rnmod1 0.01
RS1 22 23 1E-6
RL1 23 24 1E8
C11 21 22 11E-10
C12 20 21 1E-12
D1 23 24 Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1
Igt1 22 30 1
Rgt1 30 31 Rnmod2 2.3
LD1 1 24 1.3E-9
LG1 2 27 2.4E-9
LS1 3 23 2.4E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=64E-9 NSUB=3.07E16 UO=389 RS=0.02 XJ=1.6e-6)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=64E-9 NSUB=1.07E16 UO=429 TPG=-1)
.MODEL Dnmod1 D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 XTI=0.1)
.MODEL Rnmod1 RES (TC1=10.7E-3 TC2=-4E-5)
.MODEL Rnmod2 RES (TC1=-2.6E-3 TC2=-5E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=02NOV2010
*VERSION=2
*
.SUBCKT DMN3300U 10 20 30
* TERMINALS: D G S
M1 10 20 30 30 DMOS L=100U W=100U
.MODEL DMOS NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24
+ PHI=.75 LAMBDA=127u RD=21.0m RS=21.0m
+ IS=1.00p PB=0.800 MJ=0.460 CBD=39.7p
+ CBS=47.7p CGSO=276n CGDO=230n CGBO=1.42u )
.ENDS
*
*$
*DIODES_INC_SPICE_MODEL DMN3404L
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=22Jan2013
*VERSION=1.1
.SUBCKT DMN3404L 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 10E-3
RS 23 3 Rmod1 12E-3
RG 20 22 1.8
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 320E-12
EGD 12 0 2 1 1
REGD 12 0 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 500E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS 30 23 2E-9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2 TOX=6.4E-8 NSUB=5E+16 KP=33 NFS=1E11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 162E-12 VJ = 0.45 M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=50E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=210JUL2010
*VERSION=1
*------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1
*
.SUBCKT DMN3024LSD P1 P2 P3 P4 P5 P6 P7 P8
*Device1
M11 106 103 108 108 Nmod
R12 P2 102 2
R11 104 106 Rmod1 0.015
R13 108 105 Rmod1 0.005
R15 104 105 100E6
R16 102 105 100E6
D11 105 104 Dmod1
I11 108 121 1
V11 122 121 1
R17 122 108 Rmod2 1
E11 102 103 121 108 1
E12 113 108 102 108 1
E13 114 108 104 108 1
C11 102 108 549E-12
C12 102 104 129E-12
C13 115 114 390E-12
C14 116 108 400E-12
S11 102 115 114 113 SMOD1
S12 113 115 114 113 SMOD2
S13 116 113 113 108 SMOD3
S14 116 102 113 108 SMOD4
L11 P7 104 1E-9
L12 P1 105 1E-9
R18 P7 P8 0.001
*Device2
M21 206 203 208 208 Nmod
R22 P4 202 2
R21 204 206 Rmod1 0.015
R23 208 205 Rmod1 0.005
R25 204 205 100E6
R26 202 205 100E6
D21 205 204 Dmod1
I21 208 221 1
V21 222 221 1
R27 222 208 Rmod2 1
E21 202 203 221 208 1
E22 213 208 202 208 1
E23 214 208 204 208 1
C21 202 208 549E-12
C22 202 204 129E-12
C23 215 214 390E-12
C24 216 208 400E-12
S21 202 215 214 213 SMOD1
S22 213 215 214 213 SMOD2
S23 216 213 213 208 SMOD3
S24 216 202 213 208 SMOD4
L21 P5 204 1E-9
L22 P3 205 1E-9
R28 P5 P6 0.001
*
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9
NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4
BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS DMN3024LSD
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*------connections-------D-G-S
*
.SUBCKT DMN3024LSS 3 4 5
M1 6 20 8 8 Nmod
RG 4 2 2
RD 3 6 Rmod1 0.015
RS 8 5 Rmod1 0.005
RL 3 5 100E6
D1 5 3 Dmod1
I1 8 21 1
V1 22 21 1
RT 22 8 Rmod2 1
Et 2 20 21 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
C1 2 8 549E-12
C2 2 3 129E-12
C3 15 14 390E-12
C4 16 8 400E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9
NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4
BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS DMN3024LSS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*------connections-------D-G-S
*
.SUBCKT DMN3024LK3 3 4 5
M1 6 20 8 8 Nmod
RG 4 2 2
RD 3 6 Rmod1 0.015
RS 8 5 Rmod1 0.005
RL 3 5 100E6
D1 5 3 Dmod1
I1 8 21 1
V1 22 21 1
RT 22 8 Rmod2 1
Et 2 20 21 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
C1 2 8 549E-12
C2 2 3 129E-12
C3 15 14 390E-12
C4 16 8 400E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9
NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4
BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS DMN3024LK3
*
*$
*SYM=POWMOSN
.SUBCKT DMG4800LSD D=10 G=20 S=30
* TERMINALS: D G S
M1 1 20 3 3 NMOS L=0.6U W=2.304672
RD 10 1 2m
RS 30 3 4m
CGS 20 3 692p
EGD 12 0 20 1 1
VFB 14 0 0
FFB 20 1 VFB 1
CGD 13 14 488p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=400 VMAX=40k
+ ETA=0.1m VTO=1.62 TOX=60n NSUB=2.16e16
.MODEL DCGD D CJO=488p VJ=450m M=0.420
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=30
+ CJO=48p VJ=0.950 M=0.920
.MODEL DLIM D IS=100U
.ENDS
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=S1
*2=G1
*3=S2
*4=G2
*5=D2
*6=D2
*7=D1
*8=D1
*
.SUBCKT ZXMN3AMC 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28
M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13
RG11 2 12 5
RIN11 12 13 1E12
RD11 11 15 Rdmod1 0.08
RS11 13 14 1E-6
RL11 13 15 3E9
C11 12 13 8.5E-12
C12 12 15 3E-12
D11 13 15 Dmod1
RP11 15 7 1E-6
RP12 15 8 1E-6
LS11 14 1 11.2E-9
*Dev2 N-channel
M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.28
M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.13
RG21 4 22 5
RIN21 22 23 1E12
RD21 21 25 Rdmod1 0.08
RS21 23 24 1E-6
RL21 23 25 3E9
C21 22 23 8.5E-12
C22 22 25 3E-12
D21 23 25 Dmod1
RP21 25 5 1E-6
RP22 25 6 1E-6
LS21 24 3 11.2E-9
.MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3
+KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=85e-12 BV=33)
.MODEL Rdmod1 RES (TC1=4.2e-3 TC2=1E-5)
.ENDS
*
*$
.SUBCKT DMN3730 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 400E-3
RS 23 3 Rmod1 10E-3
RG 20 22 70
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 120E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 90E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.0015
LS 30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.87 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10 IS=1E-
15 N=10)
.MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43)
.MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=35 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6)
.ENDS
.SIMULATOR DEFAULT
.SUBCKT DMN3025LFG 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01437
RS 30 3 0.001
RG 20 2 1.84
CGS 2 3 4.55E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.1E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232
.MODEL DLIM D IS = 0.0001
.ENDS
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=21/03/2014
*VERSION=1
.SUBCKT DMN3190LDW 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 50E-3
RS 23 3 Rmod1 100E-3
RG 20 22 50
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 90E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 84E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.0015
LS 30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2.5 TOX=7.3E-8 NSUB=6E+16 KP=7.5 NFS=2.8E+12 IS=.5E-
15 N=10)
.MODEL DCGD D (CJO =26E-12 VJ = 0.5 M = 0.43)
.MODEL DSUB D (IS = 1E-13 N=1.0 RS=0.07 BV=35 CJO=100E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.1e-3 TC2=12E-6)
.ENDS
* (c) 2014 Diodes Inc
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
.SIMULATOR DEFAULT
*Q1
*Q2
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=210JUL2010
*VERSION=1
*------connections-------P1=G1, P2=S1, P3=G2, P4=S2, P5=P6=D2, P7=P8=D1
*
.SUBCKT ZXMN3F31DN8 P1 P2 P3 P4 P5 P6 P7 P8
*Device1
M11 106 103 108 108 Nmod
R12 P2 102 2
R11 104 106 Rmod1 0.015
R13 108 105 Rmod1 0.005
R15 104 105 100E6
R16 102 105 100E6
D11 105 104 Dmod1
I11 108 121 1
V11 122 121 1
R17 122 108 Rmod2 1
E11 102 103 121 108 1
E12 113 108 102 108 1
E13 114 108 104 108 1
C11 102 108 549E-12
C12 102 104 129E-12
C13 115 114 390E-12
C14 116 108 400E-12
S11 102 115 114 113 SMOD1
S12 113 115 114 113 SMOD2
S13 116 113 113 108 SMOD3
S14 116 102 113 108 SMOD4
L11 P7 104 1E-9
L12 P1 105 1E-9
R18 P7 P8 0.001
*Device2
M21 206 203 208 208 Nmod
R22 P4 202 2
R21 204 206 Rmod1 0.015
R23 208 205 Rmod1 0.005
R25 204 205 100E6
R26 202 205 100E6
D21 205 204 Dmod1
I21 208 221 1
V21 222 221 1
R27 222 208 Rmod2 1
E21 202 203 221 208 1
E22 213 208 202 208 1
E23 214 208 204 208 1
C21 202 208 549E-12
C22 202 204 129E-12
C23 215 214 390E-12
C24 216 208 400E-12
S21 202 215 214 213 SMOD1
S22 213 215 214 213 SMOD2
S23 216 213 213 208 SMOD3
S24 216 202 213 208 SMOD4
L21 P5 204 1E-9
L22 P3 205 1E-9
R28 P5 P6 0.001
*
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=0.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=-0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3 VTO=2.5 KP=35 NFS=1.33E12 KAPPA=500 TOX=30E-9
NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.019 CJO=400E-12 VJ=0.6 M=0.55 TT=1e-9 TRS1=1e-4
BV=33)
.MODEL Rmod1 RES (TC1=4.3e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-4.5e-3 TC2=-6E-6)
.ENDS ZXMN3F31DN8
*
*$
.SUBCKT DMN3016LDV 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.007058
RS 30 3 0.001
RG 20 2 2.94
CGS 2 3 1.348E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ =
0.7 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*SYM=POWMOSN
.SUBCKT DMN2020LSN D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=1943.229m
RD 10 1 5m
RS 30 3 4m
RG 20 2 1.5
CGS 2 3 952p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 550p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16
.MODEL DCGD D CJO=550p VJ=0.350 M=0.410
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=116p VJ=0.120 M=0.380
.MODEL DLIM D IS=100U
.ENDS
*SYM=POWMOSN
.SUBCKT DMG9926USD D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=0.8625
RD 10 1 16m
RS 30 3 4m
RG 20 2 1.5
CGS 2 3 872p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 408p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16
*********************************************
.MODEL DCGD D CJO=448p VJ=0.450 M=0.550
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=28p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS
*SYM=POWMOSN
.SUBCKT DMN2075 D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=0.8625
RD 10 1 16m
RS 30 3 4m
RG 20 2 1.24
CGS 2 3 872p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 408p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16
.MODEL DCGD D CJO=448p VJ=0.450 M=0.550
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=25.0
+ CJO=28p VJ=0.800 M=0.420
.MODEL DLIM D IS=100U
.ENDS
*SYM=POWMOSN
.SUBCKT DMG9926UDM D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=0.8625
RD 10 1 16m
RS 30 3 4m
RG 20 2 1.5
CGS 2 3 872p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 408p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16
*********************************************
.MODEL DCGD D CJO=448p VJ=0.450 M=0.550
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=28p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS
*
*Zetex ZXMN2B03E6 Spice Model v1.0 Last Revised 7/12/07
*
.SUBCKT ZXMN2B03E6 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=1.83
M2 5 2 5 6 Pmod L=1.2E-6 W=0.67
RG 4 22 1.5
RIN 2 5 1E12
RD 3 6 Rmod1 0.015
RL 3 5 3E9
C1 2 5 10E-12
C2 3 4 3E-12
D1 5 3 Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22 62 5 1
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.8
+KP=7E-5 RS=.020 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=1E-11 RS=.05 IKF=.5 TT=0.6E-8
+CJO=200e-12 BV=23)
.MODEL Rmod1 RES (TC1=8e-3 TC2=0.9E-5)
.MODEL Rmod2 RES (TC1=-1.2e-3 TC2=-1E-6)
.ENDS ZXMN2B03E6
*
*$
*
* (c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
.SUBCKT ZXMN2F30FH 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 15E-3
RS 23 3 Rmod1 10E-3
RG 20 22 10
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 20E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 36E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.015
LS 30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.95 KP=90 NFS=8E12 TOX=3.5E-8 NSUB=1E17 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 16E-12 VJ = 0.5 M = 0.43)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.003 BV=22 CJO=10E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=3E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=3e-6 TC2=6E-6)
.ENDS
.SIMULATOR DEFAULT
.SIMULATOR DEFAULT
*
*Zetex ZXMN2F34FH Spice Model v1.0 Last Revised 31/07/08
*
.SUBCKT ZXMN2F34FH 3 4 5
*------connections-------D-G-S
M1 6 20 8 8 Nmod
RG 4 2 7
RD 3 6 Rmod1 0.025
RS 8 5 Rmod1 0.0033
RL 3 5 100E6
D1 5 3 Dmod1
I1 8 21 1
V1 22 21 1
RT 22 8 Rmod2 1
Et 2 20 21 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
C1 2 8 200E-12
C2 2 3 40E-12
C3 15 14 270E-12
C4 16 8 230E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=1.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3 VTO=1.574 KP=16 NFS=1.33E12 KAPPA=500 TOX=30E-9
NSUB=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.026 CJO=320E-12 VJ=0.55 M=0.45 TT=1e-9 TRS1=1e-4
BV=22)
.MODEL Rmod1 RES (TC1=3.1e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-1.9e-3 TC2=-6E-6)
.ENDS ZXMN2F34FH
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*SYM=POWMOSN
.SUBCKT DMG1012T D=10 G=20 S=30
* TERMINALS: D G S
M1 1 20 3 3 NMOS L=0.6U W=47.66m
RD 10 1 220m
RS 30 3 80m
CGS 20 3 57p
EGD 12 0 20 1 1
VFB 14 0 0
FFB 20 1 VFB 1
CGD 13 14 27p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16
.MODEL DCGD D CJO=27p VJ=80m M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
.MODEL DLIM D IS=100U
.ENDS
*
*Zetex ZXMN2B01F Spice Model v1.0 Last Revised 5/12/07
*
.SUBCKT ZXMN2B01F 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=0.55
M2 5 2 5 6 Pmod L=1.2E-6 W=0.22
RG 4 22 4.2
RIN 2 5 1E12
RD 3 6 Rmod1 0.05
RL 3 5 3E9
C1 2 5 10E-12
C2 3 4 3E-12
D1 5 3 Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22 62 5 1
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.66
+KP=7E-5 RS=.025 KAPPA=0.07 NFS=2E11 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=3e-3 TT=0.6E-8
+CJO=115e-12 BV=23)
.MODEL Rmod1 RES (TC1=4.6e-3 TC2=0.9E-5)
.MODEL Rmod2 RES (TC1=-1.4e-3 TC2=0E-5)
.ENDS ZXMN2B01F
*
*$
*
* (c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=S1
*2=G1
*3=S2
*4=G2
*5=D2
*6=D2
*7=D1
*8=D1
*
.SUBCKT ZXMN2AMC 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.46
M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.22
RG11 2 16 5
RIN11 12 13 1E12
RD11 11 15 Rmod11 0.036
RS11 13 14 1E-6
RL11 13 15 3E9
C11 12 13 8.5E-12
C12 12 15 3E-12
Egt11 16 12 17 13 1
Vgt11 13 18 1
Igt11 13 17 1
Rgt11 17 18 Rmod12 1
D11 13 15 Dmod1
RP11 15 7 1E-6
RP12 15 8 1E-6
LS11 14 1 1.2E-9
*Dev2 N-channel
M21 21 22 23 23 Nmod1 L=1.16E-6 W=0.46
M22 23 22 23 21 Pmod1 L=1.3E-6 W=0.22
RG21 4 26 5
RIN21 22 23 1E12
RD21 21 25 Rmod11 0.036
RS21 23 24 1E-6
RL21 23 25 3E9
C21 22 23 8.5E-12
C22 22 25 3E-12
Egt21 26 22 27 23 1
Vgt21 23 28 1
Igt21 23 27 1
Rgt21 27 28 Rmod12 1
D21 23 25 Dmod1
RP21 25 5 1E-6
RP22 25 6 1E-6
LS21 24 3 1.2E-9
.MODEL Nmod1 NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31
+KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=230e-12 BV=23)
.MODEL Rmod11 RES (TC1=5.8e-3 TC2=1.3E-5)
.MODEL Rmod12 RES (TC1=-3e-4 TC2=0)
.ENDS
*
*$
.SUBCKT DMN2300UFB4 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 130E-3
RS 23 3 Rmod1 10E-3
RG 20 22 50
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 140E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 140E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.022
LS 30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.9095 TOX=5.8E-8 NSUB=1E+17 KP=11.5 NFS=.5E+10
IS=1E-15 N=10)
.MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 1E-13 N=1.19 RS=0.06 BV=22 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=6e-3 TC2=12E-6)
.ENDS
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL DMN2065UW
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Apr2013
*VERSION=1
*PINS 10=D 20=G 30=S
.SUBCKT DMN2065UW 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 33E-3
RS 23 3 Rmod1 15E-3
RG 20 22 8
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 220E-12
EGD 12 0 2 1 1
*REGD 12 0 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 760E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS 30 23 2E-9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.92 TOX=4.5E-8 NSUB=1E+16 KP=75 NFS=1E+11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=.1E-12 N=1.02 RS=0.06 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6)
.ENDS
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL DMN2013UFDE
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Mar2104
*VERSION=1
*PINS 10=D 20=G 30=S
.SUBCKT DMN2013UFDE 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 4E-3
RS 23 3 Rmod1 3E-3
RG 20 22 1.2
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 1200E-12
EGD 12 0 2 1 1
*REGD 12 0 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1900E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 .005
RL 30 23 3
LS 30 23 2E-9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=.9 TOX=4.5E-8 NSUB=1E+16 KP=190 NFS=1E+11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 180E-12 VJ = 0.45 M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=200E-12 N=1 RS=0.0128 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.3e-3 TC2=1E-6)
.ENDS
*NMOS
.SUBCKT DMN2990UFA 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.3743
RS 30 3 0.001
RG 20 2 113
CGS 2 3 2.5E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 8E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716
+ TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7
.MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429
.MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ
= 0.2048 M = 0.1841
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMN2990UFA Spice Model v1.0 Last Revised 2012/11/30
*single channel
.SUBCKT Single 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.007802
RS 30 3 0.001
RG 20 2 1
CGS 2 3 2.306E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.5E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9022
+ TOX = 6E-008 NSUB = 1E+016 KP = 202.3 U0 = 400 KAPPA = 1
.MODEL DCGD D CJO = 9.462E-010 VJ = 1 M = 0.7
.MODEL DSUB D IS = 3.451E-008 N = 4.441E-010 RS = 1.473 BV = 65 CJO = 1.058E-
011 VJ = 1 M = 0.7
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMN2023UCB4 Spice Model v1.0 Last Revised 2015/1/5
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/01/2009
*VERSION=1
*PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMN6A11DN8 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=0.8E-6 W=0.5
M12 22 21 22 20 Pnmod1 L=0.6E-6 W=0.45
RG1 26 27 4.5
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.08
RS1 22 23 1E-6
RL1 23 24 10E9
C11 21 22 220E-12
C12 20 21 1E-12
D1 23 24 Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 N-channel
M21 60 61 62 62 Nnmod1 L=0.8E-6 W=0.5
M22 62 61 62 60 Pnmod1 L=0.6E-6 W=0.45
RG21 66 67 4.5
RIN2 61 62 2E12
RD2 60 64 Rnmod1 0.08
RS2 62 63 1E-6
RL2 63 64 10E9
C21 61 62 220E-12
C22 60 61 1E-12
D2 63 64 Dnmod1
Egt2 66 61 30 22 1
Vgt2 62 71 1.0
Igt2 62 70 1.0
Rgt2 70 71 Rnmod2 1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=1E17 VTO=2.45 KP=1.6E-5
+RS=.007 NFS=2E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=1.8E-13 RS=.023 TT=2.2e-8 CJO=90e-12 BV=63)
.MODEL Rnmod1 RES (TC1=5.5e-3 TC2=1.4E-5)
.MODEL Rnmod2 RES (TC1=-1.04e-3 TC2=-2E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/01/2009
*VERSION=1
*PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMN6A25DN8 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=1E-6 W=2
M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5
RG1 26 27 2
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.04
RS1 22 23 1e-6
RL1 23 24 10E9
C11 21 22 200E-12
C12 20 21 5E-12
D1 23 24 Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 N-channel
M21 60 61 62 62 Nnmod1 L=1E-6 W=2
M22 62 61 62 60 Pnmod1 L=1E-6 W=1.5
RG2 66 67 2
RIN2 61 62 2E12
RD2 60 64 Rnmod1 0.04
RS2 62 63 1e-6
RL2 63 64 10E9
C21 61 62 200E-12
C22 60 61 5E-12
D2 63 64 Dnmod1
Egt2 66 61 30 22 1
Vgt2 62 71 1.0
Igt2 62 70 1.0
Rgt2 70 71 Rnmod2 1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
+RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=66)
.MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5)
.MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=27/10/2008
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMN6A25N8 1 2 3
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=1E-6 W=2
M12 22 21 22 20 Pnmod1 L=1E-6 W=1.5
RG1 26 27 2
RIN1 21 22 2E12
RD1 20 24 Rnmod1 0.04
RS1 22 23 1e-6
RL1 23 24 10E9
C11 21 22 200E-12
C12 20 21 5E-12
D1 23 24 Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1.0
Igt1 22 30 1.0
Rgt1 30 31 Rnmod2 1
LD1 1 24 1.3E-9
LG1 2 27 1.2E-9
LS1 3 23 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=8E-8 NSUB=6E16 VTO=2.4 KP=1.6E-5
+RS=.006 NFS=5E11 KAPPA=0.06 IS=1E-16 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=8E-8 NSUB=6.6E15 TPG=-1 IS=1E-16 N=10)
.MODEL Dnmod1 D (IS=3E-12 RS=.02 TT=2.3e-8 CJO=210e-12 BV=66)
.MODEL Rnmod1 RES (TC1=3.4e-3 TC2=-1.5E-5)
.MODEL Rnmod2 RES (TC1=1.42E-3e-3 TC2=-1.5E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=02/11/2009
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMN6A08K 30 40 50
M1 6 2 5 5 Nmod L=1E-6 W=0.6
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.075
RL 6 5 10E9
C1 2 5 100E-12
C2 3 4 5E-12
D1 5 3 Dbodymod
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 5 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25
+KP=1.8E-5 RS=0.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-12 RS=0.025 IKF=0.06 TRS1=1.5e-3
+CJO=120e-12 BV=61)
.MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5)
.ENDS ZXMN6A08K
*
*$
.SUBCKT DMN6068 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 380E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 426E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.0015
LS 30 23 2n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.4 TOX=6E-8 NSUB=2.8E+17 KP=155 NFS=8E+11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 244E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=145E-9
TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)
.ENDS
.SUBCKT DMN6066 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 420E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 420E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.0015
LS 30 23 3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=6E-8 NSUB=3E+17 KP=140 NFS=8E+11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 220E-12 VJ = 0.5 M = 0.43)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.02 BV=66 CJO=330E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=2e-3 TC2=6E-6)
.ENDS
.SIMULATOR DEFAULT
.SUBCKT DMN62D0LFB 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 1.1
RS 23 3 Rmod1 .3
RG 20 22 126
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 40E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 40E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.003
LS 30 23 3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.15 TOX=5E-8 NSUB=3E+15 KP=3.8 NFS=12E+11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 15E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 5E-13 N=1.1 RS=0.06 BV=66 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.1e-3 TC2=6E-6)
.ENDS
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=17/12/2014
*VERSION=1
.SUBCKT DMN6016LFDF 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 6E-3
RS 23 3 Rmod1 6E-3
RG 20 22 1.5
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 740E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 660E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.00015
LS 30 23 3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2.77 TOX=7.5E-8 NSUB=7.5E+16 KP=120 NFS=7E+11
IS=.5E-15 N=10)
.MODEL DCGD D (CJO = 320E-12 VJ = 0.42 M = 0.4 T_ABS=25)
.MODEL DSUB D (IS = .1E-10 N=1.1 RS=0.004 BV=66 CJO=500E-12 VJ=0.42 M=0.5 TT=18E-9
TRS1=2E-3 IKF=10)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1.5e-3 TC2=6E-6)
.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15
N=10)
.MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5
TT=11E-9 TRS1=1E-3 EG=1.09)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6)
.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15
N=10)
.MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5
TT=11E-9 TRS1=1E-3 EG=1.09)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6)
.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.65 TOX=4.1E-8 NSUB=2E+17 KP=2 NFS=1E+10 IS=1E-15
N=10)
.MODEL DCGD D (CJO =30E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 2E-13 N=1 RS=0.06 BV=80 IKF=50m CJO=100E-12 VJ=0.42 M=0.5
TT=11E-9 TRS1=1E-3 EG=1.09)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=.05e-3 TC2=12E-6)
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=16/10/2009
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMN0545G4 3 4 5
M1 6 20 8 8 MOSMOD
M2 6 20 8 8 MOSMODS
RG 4 2 55
RIN 2 8 200E6
RD 3 6 RMOD1 40
RS 8 5 RMOD1 2.5
RL 3 5 200E6
C1 2 8 160E-12
C2 17 3 2E-12
D1 5 3 DMOD1
D2 17 3 DMOD2
Egs1 2 17 2 8 1
Egt1 2 20 21 5 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 RMOD2 1
.MODEL MOSMOD NMOS VTO=2.26 IS=1E-15 KP=.59 CBD=15E-12 PB=1 LAMBDA=4.9E-3
.MODEL MOSMODS NMOS VTO=1.9 IS=1E-15 KP=0.02 PB=1
.MODEL DMOD1 D IS=2E-13 RS=10 N=1.01 IKF=3E-3
.MODEL DMOD2 D CJO=25E-12 IS=1E-30 N=10
.MODEL RMOD1 RES (TC1=8E-3 TC2=1.7E-5)
.MODEL RMOD2 RES (TC1=-2.5E-3 TC2=3.3E-6)
.ENDS
*
*$
.SUBCKT ZXMN10A07F 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 400E-3
RS 23 3 Rmod1 200E-3
RG 20 22 2.6
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 105E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 80E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.0015
LS 30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11
IS=1E-15 N=10)
.MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43)
.MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=3E-3 IKF=.4)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6)
.ENDS
.SIMULATOR DEFAULT
.SUBCKT ZXMN10A07Z 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 400E-3
RS 23 3 Rmod1 200E-3
RG 20 22 2.6
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 105E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 80E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.0015
LS 30 23 1n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=4.15 TOX=10.7E-8 NSUB=1.2E+17 KP=4.2 NFS=5E+11
IS=1E-15 N=10)
.MODEL DCGD D (CJO = 60E-12 VJ = 0.5 M = 0.43)
.MODEL DSUB D (IS = .02E-10 N=1.1 RS=0.04 BV=105 CJO=33E-12 VJ=0.42 M=0.5 TT=11E-9
TRS1=3E-3 IKF=.4)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=3e-3 TC2=6E-6)
.ENDS
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/09
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMN10A08G 1 2 3
M11 20 21 22 22 Nnmod1 L=1E-6 W=0.6
M12 22 21 22 20 Pnmod1 L=1.5E-6 W=0.45
RG1 21 27 3.2
RIN1 21 22 1E12
RD1 20 24 Rnmod1 0.14
RS1 22 23 1E-6
RL1 23 24 10E9
C11 21 22 65E-12
C12 20 21 10E-12
D1 23 24 Dnmod1
LD1 1 24 1.0E-9
LG1 2 27 2.3E-9
LS1 3 23 2.3E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=4.05
+KP=18E-5 RS=.07 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=15E-8 NSUB=2E15
+TPG=-1 IS=1E-15 N=10)
.MODEL Dnmod1 D (IS=2E-12 RS=.02 IKF=0.06 TRS1=1.5e-3
+CJO=120e-12 BV=110)
.MODEL Rnmod1 RES (TC1=9.5e-3 TC2=2.5E-5)
.ENDS ZXMN10A08G
*
*$
*DIODES_INC_SPICE_MODEL ZXMN20B28K
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=23Apr2014
*VERSION=1
*PINS 10=D 20=G 30=S
.SUBCKT ZXMN20B28K 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 530E-3
RS 23 3 Rmod1 120E-3
RG 20 22 20
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 450E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 800E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.00001
LS 30 23 3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=2.2 TOX=5E-8 NSUB=1E+15 KP=150 NFS=15E+11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 130E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 1.5E-12 N=1 RS=0.01 BV=210 IKF=.12 CJO=350E-12 VJ=0.42 M=0.5
TT=130E-9 TRS1=1.2E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1.2e-3 TC2=8E-6)
.ENDS
*DIODES_INC_SPICE_MODEL ZXMN15A25K
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=20Dec2011
*VERSION=1
*PINS 10=D 20=G 30=S
.SUBCKT zxmn15a27k 10 20 30
M1 1 2 3 3 Nmod1
RD 10 1 Rmod1 300E-3
RS 23 3 Rmod1 180E-3
RG 20 22 2
RIN 20 23 2E11
RDS 10 23 6E9
CGS 2 3 150E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 240E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 10 DSUB
EL 2 22 1 3 0.001
LS 30 23 3n
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.2 TOX=20E-8 NSUB=2.8E+15 KP=9.5 NFS=1E+11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 140E-12 VJ = 0.5 M = 0.43 T_ABS=25)
.MODEL DSUB D (IS = 1.85E-12 N=1.085 RS=0.022 BV=155 CJO=330E-12 VJ=0.42 M=0.5
TT=150E-9 TRS1=2.6E-3)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=8e-3 TC2=8E-6)
.ENDS
.SIMULATOR DEFAULT
*
*Zetex BS170P Spice Model v1.1 Last Revised 3/5/00
*
.SUBCKT BS170P 3 4 5
* D G S
M1 3 2 5 5 N3306M
RG 4 2 270
RL 3 5 1.2E8
C1 2 5 28E-12
C2 3 2 3E-12
D1 5 3 N3306D
*
.MODEL N3306M NMOS VTO=1.824 RS=1.572 RD=1.436 IS=1E-15 KP=.1233
+CBD=35E-12 PB=1
.MODEL N3306D D IS=5E-12 RS=.768
.ENDS BS170P
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=02JUN2010
*VERSION=1
*PIN_ORDER Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMD63C03X 1 2 3 4 5 6 7 8
*Device1
M11 13 12 11 11 Mmod11
M12 13 12 11 11 Mmod12
R11 12 2 5
R12 12 11 2E9
R13 13 14 Rmod11 0.065
R14 11 15 Rmod11 0.012
R15 14 15 300E6
C11 12 11 269E-12
C12 12 14 33E-12
C13 16 17 300E-12
C14 18 11 365E-12
D11 15 14 Dmod11
S11 12 17 13 12 Smod11
S12 17 19 13 12 Smod12
S13 19 18 12 11 Smod13
S14 18 12 12 11 Smod14
E11 19 11 12 11 1
E12 16 11 14 11 1
L11 15 1 1E-9
L12 14 20 1E-9
R16 20 7 1E-3
R17 20 8 1E-3
* Device2
M21 23 22 21 21 Mmod21
R21 22 4 18
R22 23 21 300E6
R25 21 22 2E9
C21 22 21 450E-12
C22 23 22 35E-12
D21 23 21 Dmod21
L21 21 3 1E-9
L22 23 24 1E-9
R23 24 5 1E-3
R24 24 6 1E-3
*
.MODEL Mmod11 NMOS VTO=2.2 IS=1E-15 KP=5 CBD=170E-12 LAMBDA=4.9E-3
.MODEL Mmod12 NMOS VTO=1.8 IS=1E-15 KP=0.033
.MODEL Dmod11 D IS=2E-13 RS=0.075 BV=38 IBV=1E-6 TT=21e-9
.MODEL Smod11 VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5
.MODEL Smod12 VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5
.MODEL Smod13 VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=-3.5
.MODEL Smod14 VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5
.MODEL Rmod11 RES (TC1=3E-3 TC2=2E-5)
.MODEL Mmod21 PMOS VTO=-2.32 RS=0.09 RD=0.045 KP=4.2
+CBD=480E-12 LAMBDA=4.9E-3
.MODEL Dmod21 D IS=4E-13 N=1.04 IKF=295E-3 RS=94E-3
.ENDS
*
*$
*PMOS
.SUBCKT DMC3021LSD_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02496
RS 30 3 0.001
RG 20 2 11.1
CGS 2 3 8.938E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8.92E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC3032LSD_NMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01735
RS 30 3 0.001
RG 20 2 1.51
CGS 2 3 3.898E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.95E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 1.5
+ TOX = 6E-008 NSUB = 1E+017 KP = 16.9 KAPPA = 9.834 U0 = 400
.MODEL DCGD D CJO = 2.661E-010 VJ = 0.2369 M = 0.408
.MODEL DSUB D IS = 1.445E-010 N = 1.257 RS = 0.01296 BV = 35
+ CJO = 4.795E-011 VJ = 0.3436 M = 0.5232
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3032LSD_PMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02496
RS 30 3 0.001
RG 20 2 11.1
CGS 2 3 8.938E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8.92E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMC3032LSD Spice Model v2.0 Last Revised 2012/8/06
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=S1
*2=G1
*3=S2
*4=G2
*5=D2
*6=D2
*7=D1
*8=D1
*
.SUBCKT ZXMC3AMC 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 11 12 13 13 Nmod1 L=1.16E-6 W=0.28
M12 13 12 13 11 Pmod1 L=1.3E-6 W=0.13
RG11 2 12 5
RIN11 12 13 1E12
RD11 11 15 Rmod1 0.08
RS11 13 14 1E-6
RL11 13 15 3E9
C11 12 13 8.5E-12
C12 12 15 3E-12
D11 13 15 Dmod1
RP11 15 7 1E-6
RP12 15 8 1E-6
LS11 14 1 11.2E-9
.MODEL Nmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3
+KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=85e-12 BV=33)
.MODEL Rmod1 RES (TC1=4.2e-3 TC2=1E-5)
*Dev2 P-channel
M21 21 22 23 23 Pmod2 L=1.2E-6 W=0.33
M22 23 22 23 21 Nmod2 L=1.4E-6 W=0.19
RG21 4 22 10
RIN21 22 23 1E9
RD21 21 25 Rmod2 0.05
RS21 23 24 1E-6
RL21 23 25 3E9
C21 22 23 8.5E-12
C22 22 25 5E-12
D21 25 23 Dmod2
RP21 25 5 1E-6
RP22 25 6 1E-6
LS21 24 3 1.2E-9
.MODEL Pmod2 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17
+VTO=-1.9 KP=2E-5 RS=.05 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Nmod2 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=2E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod2 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=65e-12 BV=33)
.MODEL Rmod2 RES (TC1=5.5e-3 TC2=1.5E-5)
.ENDS
*
*$
*---------- DMC3021LK4 Spice Model ----------
*NMOS
.SUBCKT DMC3021LK4_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.005805
RS 30 3 0.001
RG 20 2 1.32
CGS 2 3 6.922E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 9.2E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028
+ TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200
.MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267
.MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011
VJ = 0.4558 M = 0.5515
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3021LK4_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02496
RS 30 3 0.001
RG 20 2 11.1
CGS 2 3 8.938E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8.92E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMG6602SVT_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01593
RS 30 3 0.001
RG 20 2 1.4
CGS 2 3 2.711E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.2E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.227
+ TOX = 6E-008 NSUB = 1E+016 KP = 9.816 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 2.317E-010 VJ = 0.2783 M = 0.4405
.MODEL DSUB D IS = 1E-015 N = 0.8731 RS = 0.04482 BV = 35 CJO = 1.086E-011 VJ
= 0.4101 M = 0.9
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMG6602SVT_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.04762
RS 30 3 0.001
RG 20 2 17
CGS 2 3 3.334E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 3.9E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 7.77E+005 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 7.61 KAPPA = 25 VTO = -1.533
.MODEL DCGD D CJO = 1.725E-010 VJ = 0.4474 M = 0.3707
.MODEL DSUB D IS = 1.119E-011 N = 1.169 RS = 0.06724 BV = 35 CJO = 2.406E-011
VJ = 0.1 M = 0.8
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3025LSD_PMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.01769
RS 30 3 0.001
RG 20 2 10.8
CGS 2 3 5.834E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 3.85E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008
+ NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877
.MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC31D5UDJ_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 1.727
RS 30 3 0.001
RG 20 2 389
CGS 2 3 2.041E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 5.3E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.5546 KAPPA = 49.86 VTO = -0.7516
.MODEL DCGD D CJO = 7.862E-012 VJ = 0.2 M = 0.3592
.MODEL DSUB D IS = 2.888E-005 N = 4.275 RS = 4.441E-010 BV = 35 CJO = 2.878E-
012 VJ = 0.6 M = 0.2781
.MODEL DLIM D IS = 0.0001
.ENDS
.SUBCKT DMC3400SDW_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.08876
RS 30 3 0.001
RG 20 2 91.88
CGS 2 3 5E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 8E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.728
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.286 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 2.92E-011 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.377E-010 N = 1.449 RS = 0.8337 BV = 30 CJO = 1.5E-011 VJ =
0.6427 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3400SDW_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.2004
RS 30 3 0.001
RG 20 2 240.1
CGS 2 3 4.97E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 7.5E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.8889 KAPPA = 19.32 VTO = -1.774
.MODEL DCGD D CJO = 2.466E-011 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.247E-010 N = 1.538 RS = 0.6734 BV = 30 CJO = 2.286E-011 VJ =
0.6656 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC3730UFL3 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.2286
RS 30 3 0.001
RG 20 2 1.08
CGS 2 3 6E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 9E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.8442
+ TOX = 6E-008 NSUB = 1E+016 KP = 6.177 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 3.263E-011 VJ = 0.6 M = 0.6
.MODEL DSUB D IS = 1.909E-009 N = 1.3 RS = 0.4387 BV = 34 CJO = 1E-015 VJ = 0.6 M =
0.7823
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3730UFL3 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.4982
RS 30 3 0.001
RG 20 2 177.7
CGS 2 3 8.153E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 6.5E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 2.741 KAPPA = 19.32 VTO = -0.9343
.MODEL DCGD D CJO = 2.569E-011 VJ = 0.6 M = 0.6165
.MODEL DSUB D IS = 4.013E-007 N = 2.187 RS = 0.2665 BV = 38 CJO = 1.212E-011 VJ =
0.71 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
.SUBCKT DMC3025LNS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01437
RS 30 3 0.001
RG 20 2 1.84
CGS 2 3 4.55E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.1E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 BV = 35 CJO = 4.795E-011 VJ =
0.3436 M = 0.5232
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3025LNS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.01336
RS 30 3 0.001
RG 20 2 8.56
CGS 2 3 1.2E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 6.5E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ =
0.8 M = 0.6 TT = 5.17E-009
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC3025LDV 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01437
RS 30 3 0.001
RG 20 2 1.84
CGS 2 3 4.55E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.1E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361 BV = 35 CJO = 4.795E-011 VJ =
0.3436 M = 0.5232
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3025LDV 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.01336
RS 30 3 0.001
RG 20 2 8.56
CGS 2 3 1.2E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 6.5E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ =
0.8 M = 0.6 TT = 5.17E-009
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC3016LNS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.007058
RS 30 3 0.001
RG 20 2 2.94
CGS 2 3 1.348E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ =
0.7 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3016LNS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.01336
RS 30 3 0.001
RG 20 2 8.56
CGS 2 3 1.2E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 6.5E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ =
0.8 M = 0.6 TT = 5.17E-009
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC3016LDV 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.007058
RS 30 3 0.001
RG 20 2 2.94
CGS 2 3 1.348E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.222
+ TOX = 6E-008 NSUB = 1E+016 KP = 121.1 U0 = 400 KAPPA = 1E-015
.MODEL DCGD D CJO = 3.779E-010 VJ = 0.6 M = 0.4637
.MODEL DSUB D IS = 2.322E-010 N = 1.242 RS = 0.002024 BV = 45 CJO = 1.63E-010 VJ =
0.7 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC3016LDV 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.01336
RS 30 3 0.001
RG 20 2 8.56
CGS 2 3 1.2E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 6.5E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 18.68 KAPPA = 19.32 VTO = -1.634
.MODEL DCGD D CJO = 2.5E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.291E-010 N = 1.209 RS = 0.01908 BV = 34 CJO = 2.5E-010 VJ =
0.8 M = 0.6 TT = 5.17E-009
.MODEL DLIM D IS = 0.0001
.ENDS
.SUBCKT DMG6601LVT G1 S2 G2 D2 S1 D1
*NMOS
M1 1 2 3 3 Nmod1
RD D1 1 Rmod1 18E-3
RS 23 3 Rmod1 24E-3
RG G1 22 2
RIN G1 23 2E11
RDS D1 23 2E9
CGS 2 3 280E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 840E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 D1 DSUB
EL 2 22 1 3 0.003
LS S1 23 2E-9
RL S1 23 3
RLrun S1 S2 3E+9
.MODEL Nmod1 NMOS (LEVEL=3 VTO=1.31 TOX=4.5E-8 NSUB=1E+16 KP=50 NFS=1E+11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 72E-12 VJ = 0.45 M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=1E-12 N=1.03 RS=0.022 BV=33 CJO=120E-12 VJ=0.45 M=0.33 TT=3E-9
TRS1=.0035)
.MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6)
.SIMULATOR DEFAULT
*PMOS
M2 4 5 6 6 Pmod1
RD2 D2 4 Rmod2 40E-3
RS2 53 6 Rmod2 50E-3
RG2 G2 52 17
RIN2 G2 53 2E11
RDS2 D2 53 2E9
CGS2 5 6 460E-12
EGD2 16 0 4 5 1
VFB2 18 0 0
FFB2 4 5 VFB2 1
CGD2 17 18 860E-12
R12 17 0 1
D12 16 17 DLIM
DDG2 19 18 DCGD2
R22 16 19 1
D22 19 0 DLIM
DSD2 D2 53 DSUB2
EL2 5 52 4 6 .003
RL2 S2 53 3
LS2 S2 53 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.2 TOX=4.5E-8 NSUB=1E+15 KP=45 NFS=1E+11 IS=1E-15
N=10)
.MODEL DCGD2 D (CJO = 100E-12 VJ = 0.45 M = 0.33 T_ABS=25)
.MODEL DSUB2 D (IS=.14E-12 N=1.02 RS=0.033 BV=33 CJO=94E-12 VJ=.45 M=0.33 TT=3E-9
TRS1=.002)
.MODEL Rmod2 RES (TC1=2.5e-3 TC2=1E-6)
.ENDS
*DIODES_INC_SPICE_MODEL ZXMC10A816N8
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Sep2014
*VERSION=1
*NMOS
M1 1 2 3 3 Nmod1
RD D11 1 Rmod1 90E-3
RS 23 3 Rmod1 84E-3
RG G1 22 10
RIN G1 23 2E11
RDS D11 23 2E9
CGS 2 3 370E-12
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 380E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 23 D11 DSUB
EL 2 22 1 3 0.0035
LS S1 23 2E-9
RL S1 S2 3E+10
.MODEL Nmod1 NMOS (LEVEL=3 VTO=3.45 TOX=11E-8 NSUB=2.83E+15 KP=50 NFS=1E+12 IS=1E-
15 N=10)
.MODEL DCGD D (CJO = 8E-12 VJ = 0.6 M = 0.33 T_ABS=25)
.MODEL DSUB D (IS =5E-12 N=1.08 RS=0.02 BV=105 CJO=200E-12 VJ=0.53 M=0.55 TT=40E-9
IKF=200m)
.MODEL Rmod1 RES (TC1=1E-3 TC2=6E-6)
*PMOS
M2 4 5 6 6 Pmod1
RD2 D21 4 Rmod2 130E-3
RS2 53 6 Rmod2 84E-3
RG2 G2 52 240
RIN2 G2 53 2E11
RDS2 D21 53 2E9
CGS2 5 6 500E-12
EGD2 16 0 4 5 1
VFB2 18 0 0
FFB2 4 5 VFB2 1
CGD2 17 18 600E-12
R12 17 0 1
D12 16 17 DLIM
DDG2 19 18 DCGD2
R22 16 19 1
D22 19 0 DLIM
DSD2 D21 53 DSUB2
EL2 5 52 4 6 .0003
RL2 S2 53 3
LS2 S2 53 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-3.4 TOX=11E-8 NSUB=3.56E+16 KP=60 NFS=.1E+12 IS=1E-
15 N=10)
.MODEL DCGD2 D (CJO = 240E-12 VJ = 0.45 M = 0.33 T_ABS=25)
.MODEL DSUB2 D (IS=1E-12 N=1 RS=0.012 BV=105 CJO=100E-12 VJ=0.45 M=0.33 TT=40E-9
IKF=140m TRS1=1.5m)
.MODEL Rmod2 RES (TC1=2.6e-3 TC2=3E-6)
*NMOS
.SUBCKT DMG4511SK4_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.02
RS 30 3 0.0001227
RG 20 2 1.56
CGS 2 3 8.311E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 9.4E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.001 VTO = 2.45
+ TOX = 6E-008 NSUB = 1E+016 KP = 43.98 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 3.144E-010 VJ = 0.09587 M = 0.3239
.MODEL DSUB D IS = 3.094E-011 N = 1.136 RS = 0.01791 BV = 40 CJO = 1.281E-010
VJ = 0.3722 M = 0.5383
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMG4511SK4_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02422
RS 30 3 0.001
RG 20 2 7
CGS 2 3 9.898E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.558E+005 ETA = 0.0001
+ TOX = 6E-008 NSUB = 1E+016 KP = 16.62 KAPPA = 1 VTO = -1.536
.MODEL DCGD D CJO = 3.059E-010 VJ = 0.1859 M = 0.2861
.MODEL DSUB D IS = 3.103E-011 N = 1.129 RS = 0.03535 BV = 45 CJO = 1.446E-010
VJ = 0.8474 M = 0.6504
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMG1029SV_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 1.631
RS 30 3 0.001
RG 20 2 133
CGS 2 3 2.711E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.628E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0 VTO = 1.596
+ TOX = 6E-008 NSUB = 1.945E+017 KP = 1.196 KAPPA = 1E-015 U0 = 400 THETA =
5.648E-007
.MODEL DCGD D CJO = 2.628E-011 VJ = 0.009081 M = 0.2561
.MODEL DSUB D IS = 2.05E-009 N = 1.698 RS = 0.1282 BV = 65 CJO = 6.226E-012
VJ = 1 M = 0.6474
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMG1029SV_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 2.072
RS 30 3 0.001
RG 20 2 1
CGS 2 3 2.301E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 4.1E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001 TOX = 6E-008 NSUB =
1E+016 KP = 0.3083 KAPPA = 32.1 VTO = -1.513
.MODEL DCGD D CJO = 7.698E-012 VJ = 0.2 M = 0.2205
.MODEL DSUB D IS = 9.579E-010 N = 1.677 RS = 0.1623 BV = 50 CJO = 9.694E-012 VJ =
0.4761 M = 0.3849
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC4050SSDQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01247
RS 30 3 0.001
RG 20 2 1.29
CGS 2 3 1.225E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.7E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378
+ TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6
.MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6
M = 0.7823
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC4050SSDQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.006043
RS 30 3 0.001
RG 20 2 6.43
CGS 2 3 1.554E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 1.4E-009
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ =
0.0947 M = 0.3174
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC6040SSDQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.03016
RS 30 3 0.001
RG 20 2 1.66
CGS 2 3 1.107E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 8.5E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.359
+ TOX = 6E-008 NSUB = 1E+016 KP = 58.33 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 1.99E-010 VJ = 0.7999 M = 0.6
.MODEL DSUB D IS = 2.23E-010 N = 1.26 RS = 0.006689 BV = 67 CJO = 2.221E-010 VJ =
0.6969 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC6040SSDQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.0844
RS 30 3 0.001
RG 20 2 13.61
CGS 2 3 1.079E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 7.5E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 14.83 KAPPA = 19.32 VTO = -1.879
.MODEL DCGD D CJO = 2E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 3.531E-010 N = 1.296 RS = 0.01283 BV = 67 CJO = 2.66E-011 VJ =
0.8 M = 0.6 TT=7E-09
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC4040SSDQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01247
RS 30 3 0.001
RG 20 2 1.29
CGS 2 3 1.225E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.7E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.378
+ TOX = 6E-008 NSUB = 1E+016 KP = 59.42 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 5.583E-010 VJ = 0.6 M = 0.6
.MODEL DSUB D IS = 1.44E-009 N = 1.222 RS = 0.009951 BV = 47 CJO = 1E-015 VJ = 0.6
M = 0.7823
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC4040SSDQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.006043
RS 30 3 0.001
RG 20 2 6.43
CGS 2 3 1.554E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 1.4E-009
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010
+ TOX = 6E-008 NSUB = 1E+016 KP = 11.66 KAPPA = 9.057 VTO = -1.385
.MODEL DCGD D CJO = 5.62E-010 VJ = 0.6 M = 0.4221
.MODEL DSUB D IS = 4.586E-010 N = 1.275 RS = 0.01773 BV = 50 CJO = 2.892E-010 VJ =
0.0947 M = 0.3174
.MODEL DLIM D IS = 0.0001
.ENDS
*N-CH
.SUBCKT DMG1016VN D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=57.5m
RD 10 1 240m
RS 30 3 60m
RG 20 2 93
CGS 2 3 57p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 27p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17
*********************************************
.MODEL DCGD D CJO=27p VJ=80m M=0.320
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VN
*P-CH
.SUBCKT DMG1016VP D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L=0.6U W=41m
RD 10 1 300m
RS 30 3 75m
RG 20 2 150
CGS 2 3 54.55p
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 22.2p
R1 13 30 1.00
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1.00
D2 30 15 DLIM
DSD 10 3 DSUB
*********************************************
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17
*********************************************
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=20p VJ=0.600 M=0.350
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VP
*NMOS
.SUBCKT DMC2004LPK_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.1925
RS 30 3 0.001
RG 20 2 68
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 3.272E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 6.7E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35
.MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101
.MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ
= 0.1753 M = 0.2672
.MODEL DLIM D IS = 0.0001
.MODEL DESD D IS=2E-7 N=2.2 BV=13
.ENDS
*PMOS
.SUBCKT DMC2004LPK_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.4041
RS 30 3 0.001
RG 20 2 14.3
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 4.178E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 5.7E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823
.MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576
.MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ =
0.3007 M = 0.2934
.MODEL DLIM D IS = 0.0001
.MODEL DESD D IS=1E-7 N=2.2 BV=12.3
.ENDS
*Diodes DMC2004LPK Spice Model v1.0 (ESD added) Last Revised 2012/6/1
*NMOS
.SUBCKT DMC2004DWK_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.1925
RS 30 3 0.001
RG 20 2 68
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 3.272E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 6.7E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35
.MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101
.MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ
= 0.1753 M = 0.2672
.MODEL DLIM D IS = 0.0001
.MODEL DESD D IS=2E-7 N=2.2 BV=13
.ENDS
*PMOS
.SUBCKT DMC2004DWK_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.4041
RS 30 3 0.001
RG 20 2 14.3
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 4.178E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 5.7E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823
.MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576
.MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ =
0.3007 M = 0.2934
.MODEL DLIM D IS = 0.0001
.MODEL DESD D IS=1E-7 N=2.2 BV=12.3
.ENDS
*Diodes DMC2004DWK Spice Model v1.0 (ESD added) Last Revised 2012/6/1
*NMOS
.SUBCKT DMC2004VK_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.1925
RS 30 3 0.001
RG 20 2 68
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 3.272E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 6.7E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35
.MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101
.MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ
= 0.1753 M = 0.2672
.MODEL DLIM D IS = 0.0001
.MODEL DESD D IS=2E-7 N=2.2 BV=13
.ENDS
*PMOS
.SUBCKT DMC2004VK_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.4041
RS 30 3 0.001
RG 20 2 14.3
DESD1 2 5 DESD
DESD2 3 5 DESD
CGS 2 3 4.178E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 5.7E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823
.MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576
.MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ =
0.3007 M = 0.2934
.MODEL DLIM D IS = 0.0001
.MODEL DESD D IS=1E-7 N=2.2 BV=12.3
.ENDS
*Diodes DMC2004VK Spice Model v1.0 (ESD added) Last Revised 2012/6/1
*NMOS
.SUBCKT DMC2038LVT_NMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.02716
RS 30 3 0.001
RG 20 2 1.9
CGS 2 3 3.359E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 7.5E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 0.9264
+ TOX = 6E-008 NSUB = 1E+017 KP = 48.04 KAPPA = 0.1 U0 = 400
.MODEL DCGD D CJO = 3.417E-010 VJ = 0.2406 M = 0.4472
.MODEL DSUB D IS = 2.969E-010 N = 1.598 RS = 0.02426
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC2038LVT_PMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.04586
RS 30 3 0.001
RG 20 2 72
CGS 2 3 5.078E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 7.9E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 14.56 KAPPA = 1 VTO = -0.75
.MODEL DCGD D CJO = 3.371E-010 VJ = 0.226 M = 0.4329
.MODEL DSUB D IS = 1.334E-008 N = 1.338 RS = 0.1868 BV = 25
+ CJO = 3.296E-011 VJ = 0.3087 M = 0.4639
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMC2038LVT_PMOS Spice Model v2.0 Last Revised 2013/8/27
*NMOS
.SUBCKT DMC2990UDJ_NMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.3743
RS 30 3 0.001
RG 20 2 113
CGS 2 3 2.5E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 8E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716
+ TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7
.MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429
.MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ
= 0.2048 M = 0.1841
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC2990UDJ_PMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.6562
RS 30 3 0.001
RG 20 2 400
CGS 2 3 2.653E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 5.8E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305
.MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749
.MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705
+ BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC2400UV_NMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.1925
RS 30 3 0.001
RG 20 2 68
CGS 2 3 3.272E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 6.7E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.9058
+ TOX = 6E-008 NSUB = 1E+016 KP = 3.223 U0 = 400 KAPPA = 15.35
.MODEL DCGD D CJO = 1.94E-011 VJ = 0.1108 M = 0.3101
.MODEL DSUB D IS = 1E-009 N = 1.905 RS = 0.02633 BV = 25 CJO = 5.066E-012 VJ
= 0.1753 M = 0.2672
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC2400UV_PMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.4041
RS 30 3 0.001
RG 20 2 14.3
CGS 2 3 4.178E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 5.7E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 1.095 KAPPA = 49.86 VTO = -0.8823
.MODEL DCGD D CJO = 1.311E-011 VJ = 0.2302 M = 0.2576
.MODEL DSUB D IS = 3E-009 N = 1.688 RS = 0.5 BV = 25 CJO = 6.498E-012 VJ =
0.3007 M = 0.2934
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC1229UFDB_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01212
RS 30 3 0.001
RG 20 2 1.26
CGS 2 3 7.966E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.5E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.842
+ TOX = 6E-008 NSUB = 1E+016 KP = 85.31 U0 = 400 KAPPA = 4.441E-010
.MODEL DCGD D CJO = 5.233E-010 VJ = 0.5 M = 0.5671
.MODEL DSUB D IS = 1.415E-009 N = 1.088 RS = 0.04255 BV = 20 CJO = 1E-015 VJ
= 0.6 M = 0.6045
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC1229UFDB_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.0273
RS 30 3 0.001
RG 20 2 57
CGS 2 3 8.383E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 1.15E-009
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 32.61 KAPPA = 49.86 VTO = -0.9861
.MODEL DCGD D CJO = 7.701E-010 VJ = 0.7998 M = 0.6
.MODEL DSUB D IS = 6.057E-009 N = 1.269 RS = 0.0595 BV = 20 CJO = 3.41E-012
VJ = 0.8 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC1028UFDB_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01016
RS 30 3 0.001
RG 20 2 4.8
CGS 2 3 6.15E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.5E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.955
+ TOX = 6E-008 NSUB = 1E+016 KP = 60.27 U0 = 400 KAPPA = 4.441E-010
.MODEL DCGD D CJO = 7.098E-010 VJ = 0.6435 M = 0.6
.MODEL DSUB D IS = 9.003E-010 N = 1.119 RS = 0.04018 BV = 50 CJO = 2.22E-010
VJ = 0.3 M = 0.6045
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC1028UFDB_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.03888
RS 30 3 0.001
RG 20 2 15
CGS 2 3 5.112E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 17.45 KAPPA = 49.86 VTO = -0.7114
.MODEL DCGD D CJO = 3.238E-010 VJ = 0.6 M = 0.52
.MODEL DSUB D IS = 1.955E-008 N = 1.194 RS = 0.1356 BV = 30 CJO = 1.43E-012
VJ = 0.8 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC2450UV_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.2445
RS 30 3 1E-008
RG 20 2 68
CGS 2 3 1.832E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 5.732E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 0.9194
+ TOX = 6E-008 NSUB = 1E+016 KP = 4.018 U0 = 400 KAPPA = 4.441E-010
.MODEL DCGD D CJO = 9.036E-011 VJ = 0.1064 M = 0.9082
.MODEL DSUB D IS = 2.332E-010 N = 1.704 RS = 0.05944 BV = 23.5 CJO = 1E-015 VJ =
0.1745 M = 0.9133
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMC2450UV_N Spice Model v1.0 Last Revised 2015/9/07
*N-CH
.SUBCKT DMG1016VQ D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=57.5m
RD 10 1 240m
RS 30 3 60m
RG 20 2 93
CGS 2 3 57p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 27p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17
*********************************************
.MODEL DCGD D CJO=27p VJ=80m M=0.320
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VN
*P-CH
.SUBCKT DMG1016VP D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L=0.6U W=41m
RD 10 1 300m
RS 30 3 75m
RG 20 2 150
CGS 2 3 54.55p
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 22.2p
R1 13 30 1.00
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1.00
D2 30 15 DLIM
DSD 10 3 DSUB
*********************************************
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17
*********************************************
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=20p VJ=0.600 M=0.350
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VQ
*NMOS
.SUBCKT DMC1030UFDBQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01313
RS 30 3 0.001
RG 20 2 1.63
CGS 2 3 8.902E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.22E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 0.7701
+ TOX = 6E-008 NSUB = 1E+016 KP = 89.51 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 4.613E-010 VJ = 0.6179 M = 0.6
.MODEL DSUB D IS = 1.7E-009 N = 1.041 RS = 0.0586 BV = 20 CJO = 2.066E-015 VJ =
0.7549 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC1030UFDBQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.03274
RS 30 3 0.001
RG 20 2 4.88
CGS 2 3 7.966E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 9.5E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844
.MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ =
0.8 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMC1030UFDBQ Spice Model v1.0M Last Revised 2016/1/28
*NMOS
*PMOS
*NMOS
.SUBCKT DMC1015UPD 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.003806
RS 30 3 0.001
RG 20 2 1.63
CGS 2 3 1.22E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.17E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141
+ TOX = 6E-008 NSUB = 1E+016 KP = 99.78 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 1.283E-009 VJ = 0.6 M = 0.6
.MODEL DSUB D IS = 4.518E-010 N = 1.111 RS = 0.01242 BV = 20 CJO = 2.066E-015 VJ =
0.7549 M = 0.6 TT=1.436E-08
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC1015UPD 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02073
RS 30 3 0.001
RG 20 2 10.39
CGS 2 3 1.384E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 1.3E-009
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 44.98 KAPPA = 19.32 VTO = -0.9359
.MODEL DCGD D CJO = 7.175E-010 VJ = 0.6 M = 0.6
.MODEL DSUB D IS = 6.359E-007 N = 1.663 RS = 0.09391 BV = 20 CJO = 1.769E-012 VJ =
0.8 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC1016UPD 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.003806
RS 30 3 0.001
RG 20 2 1.63
CGS 2 3 1.22E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.17E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 1.141
+ TOX = 6E-008 NSUB = 1E+016 KP = 99.78 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 1.283E-009 VJ = 0.6 M = 0.6
.MODEL DSUB D IS = 4.518E-010 N = 1.111 RS = 0.01242 BV = 20 CJO = 2.066E-015 VJ =
0.7549 M = 0.6 TT=1.436E-08
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC1016PD 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.006917
RS 30 3 0.001
RG 20 2 12.02
CGS 2 3 2.686E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 3.8E-009
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 91.34 KAPPA = 19.32 VTO = -0.7199
.MODEL DCGD D CJO = 1.478E-009 VJ = 0.6094 M = 0.6
.MODEL DSUB D IS = 2.978E-008 N = 1.118 RS = 0.03405 BV = 20 CJO = 3.453E-010 VJ =
0.6 M = 0.6726
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMC2990UDJQ_NMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.3743
RS 30 3 0.001
RG 20 2 113
CGS 2 3 2.5E-011
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 8E-011
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01 VTO = 0.8716
+ TOX = 6E-008 NSUB = 1.886E+016 KP = 2.108 U0 = 400 KAPPA = 10.7
.MODEL DCGD D CJO = 1.594E-011 VJ = 0.2646 M = 0.429
.MODEL DSUB D IS = 2.265E-009 N = 1.422 RS = 1.834 BV = 25 CJO = 2.7E-012 VJ
= 0.2048 M = 0.1841
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMC2990UDJQ_PMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.6562
RS 30 3 0.001
RG 20 2 400
CGS 2 3 2.653E-011
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 5.8E-011
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 0.6965 KAPPA = 32.11 VTO = -0.6305
.MODEL DCGD D CJO = 1.549E-011 VJ = 0.1652 M = 0.3749
.MODEL DSUB D IS = 3.478E-007 N = 2.097 RS = 3.705
+ BV = 25 CJO = 3.247E-012 VJ = 1.719E-014 M = 0.02141
.MODEL DLIM D IS = 0.0001
.ENDS
*
*Zetex ZVP4424Z Spice Model v1.0 Last Revised 17/07/2008
*
.SUBCKT ZVP4424Z 3 4 5
*------connections-------D-G-S
*
M1 6 2 8 8 P4424AM
M2 6 2 8 8 P4424AMS
RG 4 2 27
RD 3 6 5.5
RS 8 5 0.6
RL 3 5 240E6
D1 3 5 P4424AD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 125E-12
C2 2 3 15E-12
C3 15 14 210E-12
C4 16 8 220E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=-1 VOFF=-2
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-1
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=3.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=3.5 VOFF=2.5
.MODEL P4424AM PMOS VTO=-1.4 IS=1E-15 KP=0.26 CBD=65.3E-12 PB=1
.MODEL P4424AMS PMOS VTO=-1.04 IS=1E-15 KP=0.0026 CBD=270E-12 PB=1
.MODEL P4424AD D IS=9.36E-13 RS=.196 N=1.045
.ENDS ZVP4424Z
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP2120G4 3 4 5
M1 13 20 5 5 Pmod1
RG 4 2 100
RIN 2 5 1E9
RL 3 5 1.2E8
RD 3 13 Rmod1 22
C1 2 5 55E-12
D1 3 5 Dmod1
D2 3 17 Dmod2
Egs1 2 17 2 5 1
Egt1 2 20 5 21 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 Rmod2 1
.MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
+ CBD=60E-12 PB=1 LAMBDA=6E-3
.MODEL Dmod1 D IS=5E-12 RS=2 BV=220
.MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10
.MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5)
.MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=17/12/2014
*VERSION=1
.SUBCKT ZXMP10A13F 10 20 30
M1 1 2 3 3 Pmod1
RD 10 1 Rmod1 300E-3
RS 23 3 Rmod1 600E-3
RG 20 22 10
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 13E-12
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 8E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 23 DSUB
EL 2 22 1 3 .009
RL 30 23 3
LS 30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-4 TOX=10.4E-8 NSUB=3.5E+14 KP=38 NFS=13.7E+11
IS=1E-15 N=10)
.MODEL DCGD D (CJO = 8E-12 VJ = 0.45 M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=.29E-12 N=1.01 RS=0.05 BV=105 CJO=20E-12 VJ=0.45 M=0.33 TT=14E-9
TRS1=2m IKF=.5)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1.2e-3 TC2=1E-6)
.ENDS
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=17SEP2010
*VERSION=1
*------connections------- D, G, S
.SUBCKT ZXMP10A17G 30 40 50
M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
RG 4 2 4.2
RIN 2 5 1E9
RD 3 6 Rdmod 0.185
RL 3 5 7E9
D1 3 5 Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15
+ VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41
+ TT=5.2e-8 BV=110)
.MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5)
.ENDS ZXMP10A17G
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=17SEP2010
*VERSION=1
*------connections------- D, G, S
.SUBCKT ZXMP10A17K 30 40 50
M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
RG 4 2 4.2
RIN 2 5 1E9
RD 3 6 Rdmod 0.185
RL 3 5 7E9
D1 3 5 Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15
+ VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41
+ TT=5.2e-8 BV=110)
.MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5)
.ENDS ZXMP10A17K
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP2120E5 3 4 5
M1 13 20 5 5 Pmod1
RG 4 2 100
RIN 2 5 1E9
RL 3 5 1.2E8
RD 3 13 Rmod1 22
C1 2 5 55E-12
D1 3 5 Dmod1
D2 3 17 Dmod2
Egs1 2 17 2 5 1
Egt1 2 20 5 21 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 Rmod2 1
.MODEL Pmod1 PMOS VTO=-2.8 RS=2 IS=1E-15 KP=0.17
+ CBD=60E-12 PB=1 LAMBDA=6E-3
.MODEL Dmod1 D IS=5E-12 RS=2 BV=220
.MODEL Dmod2 D CJO=70e-12 IS=1e-30 N=10
.MODEL Rmod1 RES (TC1=4.5e-3 TC2=4E-5)
.MODEL Rmod2 RES (TC1=-2.5e-3 TC2=3e-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=17SEP2010
*VERSION=1
*------connections------- D, G, S
.SUBCKT ZXMP10A17GQ 30 40 50
M1 6 2 5 5 Pmod L=1.35E-6 W=1.082
M2 5 2 5 6 Nmod L=1.8E-6 W=0.6
RG 4 2 4.2
RIN 2 5 1E9
RD 3 6 Rdmod 0.185
RL 3 5 7E9
D1 3 5 Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Pmod PMOS (LEVEL=3 TOX=9.5E-8 NSUB=5E15
+ VTO=-3.7 KP=0.6E-5 RS=0.05 NFS=0.8E12 KAPPA=0.03 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=9.5E-8 NSUB=2.5E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=7.5E-13 RS=.06 TRS1=1.5e-3 CJO=120e-12 M=0.43 VJ=0.41
+ TT=5.2e-8 BV=110)
.MODEL Rdmod RES (TC1=7.8e-3 TC2=1.4E-5)
.ENDS ZXMP10A17GQ
*
*$
.SUBCKT DMP3056LDM 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02496
RS 30 3 0.001
RG 20 2 11.1
CGS 2 3 8.938E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8.92E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMP3056LDM Spice Model v2.0 Last Revised 2012/8/06
.SUBCKT DMP3056LSD 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02496
RS 30 3 0.001
RG 20 2 11.1
CGS 2 3 8.938E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8.92E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMC3036LSD Spice Model v2.0 Last Revised 2012/8/06
.SUBCKT DMP3056LSS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.02496
RS 30 3 0.001
RG 20 2 11.1
CGS 2 3 8.938E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 8.92E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 2.425E+005 KP = 27.53 ETA = 0.0001
+ TOX = 6E-008 NSUB = 1E+017 KAPPA = 2.932 VTO = -1.9
.MODEL DCGD D CJO = 4.013E-010 VJ = 0.3844 M = 0.3457
.MODEL DSUB D IS = 2.245E-010 N = 1.343 RS = 0.01819
+ BV = 35 CJO = 7.964E-011 VJ = 3.068 M = 0.9583
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMP3056LSS Spice Model v2.0 Last Revised 2012/8/06
*DIODES_INC_SPICE_MODEL DMP3098L
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11Dec2012
*VERSION=1
.SUBCKT DMP3098L 10 20 30
M1 1 2 3 3 Pmod1
RD 10 1 Rmod1 27E-3
RS 23 3 Rmod1 27E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 100E-12
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 400E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS 30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS
*DIODES_INC_SPICE_MODEL DMP3098LDM
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11Dec2012
*VERSION=1
.SUBCKT DMP3098LDM 10 20 30
M1 1 2 3 3 Pmod1
RD 10 1 Rmod1 26E-3
RS 23 3 Rmod1 26E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 100E-12
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 400E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS 30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS
*DIODES_INC_SPICE_MODEL DMP3098LSD
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11Dec2012
*VERSION=1
.SUBCKT DMP3098LSD 10 20 30
M1 1 2 3 3 Pmod1
RD 10 1 Rmod1 26E-3
RS 23 3 Rmod1 26E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 100E-12
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 400E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS 30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS
*DIODES_INC_SPICE_MODEL DMP3098LSS
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=11Dec2012
*VERSION=1
.SUBCKT DMP3098LSS 10 20 30
M1 1 2 3 3 Pmod1
RD 10 1 Rmod1 26E-3
RS 23 3 Rmod1 26E-3
RG 20 22 5
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 100E-12
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 400E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS 30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-2.1 TOX=6E-8 NSUB=5E+16 KP=9 NFS=1E11 IS=1E-15
N=10)
.MODEL DCGD D (CJO = 350E-12 VJ = 0.45 M = 0.33)
.MODEL DSUB D (IS=2.5E-13 N=1 RS=0.018 BV=33 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1)
.MODEL Rmod1 RES (TC1=.5e-3 TC2=3E-6)
.ENDS
*SYM=POWMOSP
.SUBCKT DMP2035U D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L=0.6U W=0.9
RD 10 1 15m
RS 30 3 4m
RG 20 2 9.45
CGS 2 3 1.42n
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 598p
R1 13 30 1.00
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1.00
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-1.02 TOX=16.8n NSUB=2e17
.MODEL DCGD D CJO=598p VJ=0.150 M=0.340
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=40p VJ=0.500 M=0.450
.MODEL DLIM D IS=100U
.ENDS
*SYM=POWMOSP
.SUBCKT DMG2301U D=10 G=20 S=30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L=0.6U W=0.4
RD 10 1 60m
RS 30 3 15m
RG 20 2 44.9
CGS 2 3 560p
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 258p
R1 13 30 1.00
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1.00
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-1.0 TOX=16.8n NSUB=5.36e16
.MODEL DCGD D CJO=298p VJ=0.50 M=0.550
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=28p VJ=0.500 M=0.650
.MODEL DLIM D IS=100U
.ENDS
*DIODES_INC_SPICE_MODEL DMP2225L
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=18sep2013
*VERSION=2
*PINS 10=D 20=G 30=S
.SUBCKT DMP2225L 10 20 30
M1 1 2 3 3 Pmod1
RD 10 1 Rmod1 45E-3
RS 23 3 Rmod1 10E-3
RG 20 22 14
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 220E-12
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 480E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS 30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.13 TOX=7.5E-8 NSUB=1E+16 KP=7.5 NFS=1E+11 IS=1E-
15 N=10)
.MODEL DCGD D (CJO = 380E-12 VJ = 0.45 M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=.9E-12 N=1.02 RS=0.035 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6)
.ENDS
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=01/03/2010
*VERSION=2
*------connections-------D_G_S
*
.SUBCKT DMP2104V 1 2 3
M1 1 2 3 3 Pmod1
M2 1 2 3 3 Pmod2
M3 1 2 3 3 Pmod3
.MODEL Pmod1 PMOS(LEVEL=1 VTO=-1.08 KP=11.9 GAMMA=1.24
+ PHI=.75 LAMBDA=244u RD=45m RS=21.0m
+ IS=475f PB=0.800 MJ=0.460 CBD=81.1p
+ CBS=97.4p CGSO=720n CGDO=600n CGBO=1.88u)
.MODEL Pmod2 PMOS(LEVEL=1 VTO=-0.88 KP=1.2 RD=45 RS=2.1)
.MODEL Pmod3 PMOS(LEVEL=1 VTO=-0.68 KP=0.12 RD=450 RS=210)
.ENDS
*
*$
*SRC=DMP2240UDM;DI_DMP2240UDM;MOSFETs Enh;20.0V 2.00A 0.150ohms Diodes Inc MOSFET
.MODEL DI_DMP2240UDM PMOS( LEVEL=1 VTO=1.00 KP=11.9u GAMMA=1.24
+ PHI=.75 LAMBDA=514u RD=21.0m RS=21.0m
+ IS=1.00p PB=0.800 MJ=0.460 CBD=81.1p
+ CBS=97.4p CGSO=720n CGDO=600n CGBO=1.88u )
* -- Assumes default L=100U W=100U --
*SYM=POWMOSP
.SUBCKT DMG1013UW 10 20 30
* TERMINALS: D G S
M1 1 20 3 3 PMOS L=0.6U W=47.66m
RD 10 1 300m
RS 30 3 85m
CGS 20 3 57.55p
EGD 12 30 20 1 1
VFB 14 30 0
FFB 20 1 VFB 1
CGD 13 14 22.2p
R1 13 30 1.00
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1.00
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0
+ CJO=20p VJ=0.600 M=0.50
.MODEL DLIM D IS=100U
.ENDS
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=01/03/2010
*VERSION=2
*------connections-------D_G_S
*
.SUBCKT DMP2004VK 1 2 3
M1 1 2 3 3 Pmod1
M2 1 2 3 3 Pmod2
M3 1 2 3 3 Pmod3
.MODEL Pmod1 PMOS(LEVEL=1 VTO=-0.95 KP=1.5 GAMMA=1.24
+ PHI=.75 LAMBDA=208u RD=0.5 RS=0.126
+ IS=265f PB=0.800 MJ=0.460 CBD=40.6p
+ CBS=48.7p CGSO=240n CGDO=200n CGBO=1.31u)
.MODEL Pmod2 PMOS(LEVEL=1 VTO=-0.75 KP=0.15 RD=50 RS=13)
.MODEL Pmod3 PMOS(LEVEL=1 VTO=-0.55 KP=0.015 RD=500 RS=130)
.ENDS
*
*$
*----------
DMP2160U Spice Model ----------
.SUBCKT DMP2160U 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.06732
RS 30 3 0.001
RG 20 2 44.9
CGS 2 3 5.341E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 6.75E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1.391E+005 KP = 20.82 ETA =
0.005556
+ TOX = 6E-008 NSUB = 1E+016 KAPPA = 0.5405 VTO = -0.9485
.MODEL DCGD D CJO = 3.766E-010 VJ = 0.2194 M = 0.4355
.MODEL DSUB D IS = 8.7E-009 N = 1.353 RS = 0.08758 BV = 25 CJO = 1E-012 VJ =
0.3188 M = 0.5753
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMP2160U Spice Model v1.0 Last Revised 2011/6/14
*DIODES_INC_SPICE_MODEL DMP2215L
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=06Jan2012
*VERSION=1
*PINS 10=D 20=G 30=S
.SUBCKT DMP2215L 10 20 30
M1 1 2 3 3 Pmod1
RD 10 1 Rmod1 45E-3
RS 23 3 Rmod1 10E-3
RG 20 22 14
RIN 20 23 2E11
RDS 10 23 2E9
CGS 2 3 220E-12
EGD 12 0 1 2 1
REGD 12 0 1
VFB 14 0 0
FFB 1 2 VFB 1
CGD 13 14 480E-12
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 10 23 DSUB
EL 2 22 1 3 .003
RL 30 23 3
LS 30 23 2E-9
.MODEL Pmod1 PMOS (LEVEL=3 VTO=-1.13 TOX=7.5E-8 NSUB=1E+16 KP=7.5 NFS=1E+11 IS=1E-
15 N=10)
.MODEL DCGD D (CJO = 380E-12 VJ = 0.45 M = 0.33 T_ABS=25)
.MODEL DSUB D (IS=.9E-12 N=1.02 RS=0.035 BV=22 CJO=94E-12 VJ=0.45 M=0.33 TT=3E-9)
.MODEL DLIM D (IS=100U N=1 T_ABS=25)
.MODEL Rmod1 RES (TC1=1e-3 TC2=1E-6)
.ENDS
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL DMP2008UFG
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=23Jul2013
*VERSION=1
*SYM=POWMOSP
.SUBCKT DMG1013T 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L=0.6U W=47.66m
RD 10 1 300m
RS 30 3 85m
RG 20 2 1
CGS 2 3 57.55p
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 22.2p
R1 13 30 1.00
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1.00
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0
+ CJO=20p VJ=0.600 M=0.50
.MODEL DLIM D IS=100U
.ENDS
*SYM=POWMOSP
.SUBCKT DMG1013UWQ 10 20 30
* TERMINALS: D G S
M1 1 20 3 3 PMOS L=0.6U W=47.66m
RD 10 1 300m
RS 30 3 85m
CGS 20 3 57.55p
EGD 12 30 20 1 1
VFB 14 30 0
FFB 20 1 VFB 1
CGD 13 14 22.2p
R1 13 30 1.00
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1.00
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL=3 U0=200 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=20n NSUB=2.1e16
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0
+ CJO=20p VJ=0.600 M=0.50
.MODEL DLIM D IS=100U
.ENDS
.SUBCKT DMP1055USW 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.03274
RS 30 3 0.001
RG 20 2 4.88
CGS 2 3 7.966E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 9.5E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 22.87 KAPPA = 19.32 VTO = -0.844
.MODEL DCGD D CJO = 8.091E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 1.135E-008 N = 1.287 RS = 0.07544 BV = 20 CJO = 1.739E-010 VJ =
0.8 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMP1055USW Spice Model v1.0M Last Revised 2016/1/28
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=04/02/2009
*VERSION=3
*PIN_ORDER Sp1, Gp1, Sp2, Gp2, Dp2, Dp2, Dp1, Dp1
*
.SUBCKT ZXMP6A17DN8 1 2 3 4 5 6 7 8
*Dev1 P-channel
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 27 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23 Dpmod1
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 P-channel
M21 60 61 62 62 Ppmod1 L=1.4E-6 W=1.25
M22 62 61 62 60 Npmod1 L=1.4E-6 W=0.95
RG2 61 67 2.8
RIN2 61 62 1E9
RD2 60 64 Rpmod1 0.028
RS2 62 63 Rpmod1 0.068
RL2 63 64 7E9
C2 61 62 160E-12
D2 64 63 Dpmod1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12
+M=0.43 VJ=0.41 TT=3.2e-8 BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP6A17E6 1 2 3
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 27 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23 Dpmod1
LD1 1 24 0.3E-9
LG1 2 27 1.2E-9
LS1 3 23 1.2E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12
+M=0.43 VJ=0.41 TT=3.2e-8 BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP6A17G 1 2 3
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 27 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23 Dpmod1
LD1 1 24 1.0E-9
LG1 2 27 2.3E-9
LS1 3 23 2.3E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12
+M=0.43 VJ=0.41 TT=3.2e-8 BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=3
*PIN_ORDER D G S
*
.SUBCKT ZXMP6A18K 1 2 3
M11 20 21 22 22 Ppmod1 L=1.2E-6 W=2.64
M12 22 21 22 20 Npmod1 L=1.4E-6 W=1.5
RG1 27 21 1.3
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.03
RS1 22 23 1E-6
RL1 23 24 3E9
C11 21 22 500E-12
C12 20 21 15E-12
D1 24 23 Dpmod1
LD1 1 24 1.3E-9
LG1 2 27 2.4E-9
LS1 3 23 2.4E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=5.5E-8 NSUB=.5E17 VTO=-1.83
+KP=1.9E-5 RS=0.035 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=1.6E-12 RS=.022 IKF=1 TRS1=1.5E-3
+CJO=65E-12 BV=66)
.MODEL Rpmod1 RES (TC1=10e-3 TC2=8E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP6A17K 1 2 3
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 27 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23 Dpmod1
LD1 1 24 1.3E-9
LG1 2 27 2.4E-9
LS1 3 23 2.4E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12
+M=0.43 VJ=0.41 TT=3.2e-8 BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS ZXMP6A17K
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER D G S
*
.SUBCKT ZXMP6A17N8 1 2 3
M11 20 21 22 22 Ppmod1 L=1.4E-6 W=1.25
M12 22 21 22 20 Npmod1 L=1.4E-6 W=0.95
RG1 21 2 2.8
RIN1 21 22 1E9
RD1 20 24 Rpmod1 0.028
RS1 22 23 Rpmod1 0.068
RL1 23 24 7E9
C1 21 22 160E-12
D1 24 23 Dpmod1
LD1 1 24 1.3E-9
LS1 3 23 2.4E-9
.MODEL Ppmod1 PMOS (LEVEL=3 TOX=8.6E-8 NSUB=8E15
+VTO=-2.18 KP=3.5E-5 NFS=3.5E11 KAPPA=0.016 IS=1E-15 N=10)
.MODEL Npmod1 NMOS (LEVEL=3 TOX=8.6E-8 NSUB=6.5E15
+TPG=-1 IS=1E-15 N=10)
.MODEL Dpmod1 D (IS=2E-12 RS=0.02 IKF=0.1 TRS1=1.5e-3 CJO=85e-12
+M=0.43 VJ=0.41 TT=3.2e-8 BV=66)
.MODEL Rpmod1 RES (TC1=4.6e-3 TC2=8E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=14FEB2011
*VERSION=1
*PIN_ORDER ZXMHC6A07T8
* 1=G3 8=G4
* 2=S2S3 7=D3D4
* 3=G2 6=S1S4
* 4=G1 5=D1D2
*
.SUBCKT ZXMHC6A07T8 1 2 3 4 5 6 7 8
X1 5 4 6 P6A13
X2 5 3 2 N6A07
X3 7 1 2 N6A07
X4 7 8 6 P6A13
.ENDS ZXMHC6A07T8
*
.SUBCKT N6A07 3 4 5
M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34
M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.12
RL 6 5 10E9
C1 2 5 25E-12
C2 3 2 15E-12
D1 5 3 Dmod1
.MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6
+KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3
+CJO=71e-12 TT=24E-9 BV=66)
.MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
.ENDS N6A07
*
.SUBCKT P6A13 3 4 5
M1 6 2 5 5 Pmod L=1.2E-6 W=0.39
M2 5 2 5 6 Nmod L=1.4E-6 W=0.195
RG 4 2 3
RIN 2 5 1E9
RD 3 6 Rdmod 0.25
RL 3 5 3E9
C1 2 5 25E-12
C2 3 4 15E-12
D1 3 5 Dbodymod
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16
+VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3
+CJO=3.514e-11 BV=66)
.MODEL Rdmod RES (TC1=5e-3 TC2=1e-5)
.ENDS P6A13
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=15FEB2011
*VERSION=1
*PIN_ORDER
* 1=G3 8=G4
* 2=G2 7=D3D4
* 3=S1S2 6=D2S3
* 4=G1 5=D1S4
*
.SUBCKT ZXMHN6A07T8 1 2 3 4 5 6 7 8
X1 5 4 3 N6A07
X2 6 2 3 N6A07
X3 7 1 6 N6A07
X4 7 8 5 N6A07
.ENDS ZXMHN6A07T
*
.SUBCKT N6A07 3 4 5
M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34
M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.12
RL 6 5 10E9
C1 2 5 25E-12
C2 3 2 15E-12
D1 5 3 Dmod1
.MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6
+KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3
+CJO=71e-12 TT=24E-9 BV=66)
.MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
.ENDS N6A07
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=15FEB2011
*VERSION=1
*PIN_ORDER ZXMHC6A07T8
* 1=N1G 8=P1G
* 2=N1D/P1D 7=P1S/P2S
* 3=N1S/P2S 6=N2D/P2D
* 4=N2G 5=P2G
*
.SUBCKT ZXMHC6A07N8 1 2 3 4 5 6 7 8
X1 2 8 7 P6A13
X2 2 1 3 N6A07
X3 6 4 3 N6A07
X4 6 5 7 P6A13
.ENDS ZXMHC6A07N8
*
.SUBCKT N6A07 3 4 5
M1 6 2 5 5 Nmod1 L=.6E-6 W=0.34
M2 5 2 5 6 Pmod1 L=.6E-6 W=0.24
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.12
RL 6 5 10E9
C1 2 5 25E-12
C2 3 2 15E-12
D1 5 3 Dmod1
.MODEL Nmod1 NMOS (LEVEL=3 TOX=85E-9 NSUB=1E17 VTO=3.35 XJ=1.6E-6
+KP=9.5E-6 RS=.035 NFS=1.2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod1 PMOS (LEVEL=3 TOX=80E-9 NSUB=1E16 XJ=2.3E-6
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=0.5E-12 RS=.055 TRS1=1.5e-3
+CJO=71e-12 TT=24E-9 BV=66)
.MODEL Rmod1 RES (TC1=7.3e-3 TC2=1.6E-5)
.ENDS N6A07
*
.SUBCKT P6A13 3 4 5
M1 6 2 5 5 Pmod L=1.2E-6 W=0.39
M2 5 2 5 6 Nmod L=1.4E-6 W=0.195
RG 4 2 3
RIN 2 5 1E9
RD 3 6 Rdmod 0.25
RL 3 5 3E9
C1 2 5 25E-12
C2 3 4 15E-12
D1 3 5 Dbodymod
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1e16
+VTO=-1.5 KP=6e-6 RS=0.005 NFS=12e11 KAPPA=0.01 UO=650 IS=1E-15 N=10)
.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=1e-11 RS=0.05 IKF=0.001966 XTI=-1 TRS1=1.2e-3
+CJO=3.514e-11 BV=66)
.MODEL Rdmod RES (TC1=5e-3 TC2=1e-5)
.ENDS P6A13
*
*$
*NMOS
.SUBCKT DMHC3025LSD_NMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01437
RS 30 3 0.001
RG 20 2 1.84
CGS 2 3 4.55E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.1E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.62E+005 ETA = 0.0001 VTO = 2.222
+ TOX = 6E-008 NSUB = 1E+017 KP = 35.61 KAPPA = 1E-015 U0 = 400
.MODEL DCGD D CJO = 2.222E-010 VJ = 0.2975 M = 0.3378
.MODEL DSUB D IS = 2.278E-010 N = 1.242 RS = 0.007361
+ BV = 35 CJO = 4.795E-011 VJ = 0.3436 M = 0.5232
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMHC3025LSD_PMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.01769
RS 30 3 0.001
RG 20 2 10.8
CGS 2 3 5.834E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 3.85E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010 TOX = 6E-008
+ NSUB = 1E+016 KP = 8.945 KAPPA = 11.93 VTO = -1.877
.MODEL DCGD D CJO = 1.097E-010 VJ = 1 M = 0.24
.MODEL DSUB D IS = 2.613E-010 N = 1.268 RS = 0.01102 BV = 50
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMHC10H170SFJ_NMOS 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.1083
RS 30 3 1E-008
RG 20 2 1.37
CGS 2 3 1.07E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.5E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8E+005 ETA = 0.001 VTO = 2.715
+ TOX = 6E-008 NSUB = 1E+016 KP = 20.25 U0 = 400 KAPPA = 4.441E-010
.MODEL DCGD D CJO = 2.221E-010 VJ = 0.1 M = 0.4408
.MODEL DSUB D IS = 2.405E-010 N = 1.267 RS = 0.006864 BV = 116 CJO = 2.222E-010 VJ
= 0.1225 M = 0.5115
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMHC10H170SFJ_P 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.1739
RS 30 3 0.001
RG 20 2 12.5
CGS 2 3 1.213E-009
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 4E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 4.441E-010
+ TOX = 6E-008 NSUB = 1E+016 KP = 12.42 KAPPA = 61.41 VTO = -2.193
.MODEL DCGD D CJO = 9.262E-011 VJ = 0.7916 M = 0.3376
.MODEL DSUB D IS = 3.112E-009 N = 1.487 RS = 0.008305 BV = 150
+ CJO = 1.637E-010 VJ = 0.753 M = 0.6004
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMHC6070LSD_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.04411
RS 30 3 0.001
RG 20 2 1.31
CGS 2 3 7.136E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.4E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463
+ TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ =
0.706 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
*NMOS_Q1
.SUBCKT DMG4932LSD_Q1 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.007253
RS 30 3 0.001
RG 20 2 2.68
CGS 2 3 1.769E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.666E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
D3 3 10 DS
D4 3 10 DL
D5 3 16 DR
D6 10 16 DB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856
+ TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9
.MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396
.MODEL DLIM D IS = 4.441E-010
.MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311
.MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010
M = 0.4555 TT = 1.595E-008
.MODEL DR D IS = 1E-006 N = 1.178
.MODEL DB D IS = 1E-011 N = 1
.ENDS
*NMOS_Q2
.SUBCKT DMG4932LSD_Q2 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.005805
RS 30 3 0.001
RG 20 2 1.32
CGS 2 3 6.922E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 9.2E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.0143 VTO = 2.028
+ TOX = 6E-008 NSUB = 1E+017 KP = 21.95 KAPPA = 105 U0 = 200
.MODEL DCGD D CJO = 4.611E-010 VJ = 0.3568 M = 0.4267
.MODEL DSUB D IS = 2.567E-010 N = 1.254 RS = 0.01257 BV = 35 CJO = 8.267E-011
VJ = 0.4558 M = 0.5515
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS_Q1
.SUBCKT DMS3017SSD_Q1 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.00327
RS 30 3 0.001
RG 20 2 1.48
CGS 2 3 1.174E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.297E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
D3 3 10 DS
D4 3 10 DL
D5 3 16 DR
D6 10 16 DB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+006 ETA = 0.01379 VTO = 1.824
+ TOX = 6E-008 NSUB = 4.849E+016 KP = 64.51 KAPPA = 1E-015 U0 = 400
.MODEL DCGD D CJO = 7.171E-010 VJ = 0.2386 M = 0.3999
.MODEL DLIM D IS = 4.441E-010
.MODEL DS D IS = 1.011E-012 N = 0.9 RS = 0.007376
.MODEL DL D IS = 1.416E-007 N = 0.8743 RS = 0.2205 VJ = 0.5878 CJO = 4.376E-
010 M = 0.9
.MODEL DR D IS = 1.3E-006 N = 0.6
.MODEL DB D IS = 2.239E-008 N = 0.6
.ENDS
*NMOS_Q2
.SUBCKT DMS3017SSD_Q2 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01149
RS 30 3 0.001002
RG 20 2 1.13
CGS 2 3 4.216E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.55E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098
+ TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010
.MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026
.MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578
+ BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368
.MODEL DLIM D IS = 0.0001
.ENDS
*Diodes DMS3017SSD Spice Model v1.0 Last Revised 2011/6/27
*NMOS_Q1
.SUBCKT DMS3019SSD_Q1 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.007253
RS 30 3 0.001
RG 20 2 2.68
CGS 2 3 1.769E-009
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 1.666E-009
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
D3 3 10 DS
D4 3 10 DL
D5 3 16 DR
D6 10 16 DB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 4.791E+005 ETA = 4.441E-017 VTO = 1.856
+ TOX = 6E-008 NSUB = 3.989E+016 KP = 84.87 KAPPA = 100 U0 = 154.9
.MODEL DCGD D CJO = 7.729E-010 VJ = 0.06542 M = 0.3396
.MODEL DLIM D IS = 4.441E-010
.MODEL DS D IS = 7.339E-010 N = 1.331 RS = 0.0311
.MODEL DL D IS = 8.12E-006 N = 1.142 RS = 0.03216 VJ = 0.188 CJO = 2.828E-010
M = 0.4555 TT = 1.595E-008
.MODEL DR D IS = 1E-006 N = 1.178
.MODEL DB D IS = 1E-011 N = 1
.ENDS
*NMOS_Q2
.SUBCKT DMS3019SSD_Q2 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.01149
RS 30 3 0.001002
RG 20 2 1.13
CGS 2 3 4.216E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 4.55E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 8.276E+005 ETA = 0.02587 VTO = 2.098
+ TOX = 6.045E-008 NSUB = 1.406E+017 KP = 34.37 KAPPA = 1E-015 U0 = 4.441E-010
.MODEL DCGD D CJO = 2.453E-010 VJ = 0.1563 M = 0.3026
.MODEL DSUB D IS = 1.188E-009 N = 1.345 RS = 0.004578
+ BV = 35 CJO = 1.739E-010 VJ = 0.4139 M = 0.4368
.MODEL DLIM D IS = 0.0001
.ENDS
*
*ZETEX ZXTN25012EZ Spice model v1.0 Last revision 14/01/08
*
.MODEL ZXTN25012EZ NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35
+ BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081
+ CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9
+ XTB=1.4
*
*$
*
* (c) 2008 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DD2678 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DD2661 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/01/2009
*VERSION=1
*
.MODEL 2DD2652 NPN IS=2.66E-13 BF=550 IKF=2.25 VAF=34.6
+ ISE=5.7E-14 NE=1.425 BR=280 IKR=0.9 VAR=12.25
+ ISC=2.76E-13 NC=1.46 RB=0.22 RE=0.055 RC=0.038
+ CJC=34.2E-12 MJC=0.298 VJC=0.441 CJE=103.5E-12
+ MJE=0.357 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTN617MA NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=16/9/2009
*VERSION=1
*
.MODEL DSS4220V NPN IS=7.5E-13 BF=700 NF=1.005 VAF=61 IKF=3.3
+ ISE=8.5E-14 NE=1.35 BR=130 NR=1 VAR=11.3 IKR=1.4 ISC=6E-13 NC=1.38
+ RE=0.061 RB=0.5 RC=0.010 CJE=143E-12 VJE=0.80 MJE=0.39 CJC=39E-12
+ VJC=0.40 MJC=0.26 TF=0.48E-9 TR=2.7E-9 RCO=0.42 GAMMA=2E-9
+ QUASIMOD=1 XTB=1.35 TRE1=0.004 TRB1=0.004 TRC1=0.004
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=19/01/2011
*VERSION=1
*
.MODEL ZXTN26020DMF NPN IS=7.5E-13 BF=700 NF=1.005 VAF=61 IKF=3.3
+ ISE=8.5E-14 NE=1.35 BR=130 NR=1 VAR=11.3 IKR=1.4 ISC=6E-13 NC=1.38
+ RE=0.061 RB=0.5 RC=0.010 CJE=143E-12 VJE=0.80 MJE=0.39 CJC=39E-12
+ VJC=0.40 MJC=0.26 TF=0.48E-9 TR=2.7E-9 RCO=0.42 GAMMA=2E-9
+ QUASIMOD=1 XTB=1.35 TRE1=0.004 TRB1=0.004 TRC1=0.004
*
*$
*DIODES_INC_SPICE_MODEL ZXTN649F
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=22Aug2013
*VERSION=1.0
*DIODES_INC_SPICE_MODEL ZXTN19020DG
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=4/01/2013
*VERSION=1
*DIODES_INC_SPICE_MODEL ZXTN19020DZ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=4/01/2013
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTN618MA NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12
+ TF=0.95E-9 TR=2.25E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=E2 8=C2
* 2=B2 7=C2
* 3=E1 6=C1
* 4=B1 5=C1
*
.SUBCKT ZDT6718 1 2 3 4 5 6 7 8
Q1 11 4 3 Nmod
Q2 12 2 1 Pmod
RP1 11 5 0.001
RP2 11 6 0.001
RP3 12 7 0.001
RP4 12 8 0.001
*
.MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12
+ TF=0.95E-9 TR=2.25E-9
.MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9
+ TR=23.7E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=C1 6=E1
* 2=B1 5=B2
* 3=C2 4=E2
*
.SUBCKT ZXTC2061E6 1 2 3 4 5 6
Q1 1 2 6 Nmod
Q2 3 5 4 Pmod
*
.MODEL Nmod NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35
+ BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081
+ CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9
+ XTB=1.4
.MODEL Pmod PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13
+ IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010
+ RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35
+ VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005
+ TRB1=0.005 TRE1=0.005 XTB=1.4
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=C1 6=E1
* 2=B1 5=B2
* 3=C2 4=E2
*
.SUBCKT ZXTC2062E6 1 2 3 4 5 6
Q1 1 2 6 Nmod
Q2 3 5 4 Pmod
*
.MODEL Nmod NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4
+ BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085
+ CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC6718MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12
+ TF=0.95E-9 TR=2.25E-9
.MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9
+ TR=23.7E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27/04/2010
*VERSION=1
*PIN_ORDER C1, B1, C2, E2, B2, E1.
*
.SUBCKT ZXTD6717E6 1 2 3 4 5 6
*
Q1 1 2 6 Nmod1
Q2 3 5 4 Pmod1
*
.MODEL Nmod1 NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
*
.MODEL Pmod1 PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3
+ VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03
+ RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576
+ CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9
+ TR=2E-9
*
.ENDS
*
*$
*
*Zetex ZDT749 Spice Model v1.0 Last Revised 12/09/08
*
.SUBCKT ZDT749 1 2 3 4 5 6 7 8
* E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 PNP IS=2.6E-13 BF=210 VAF=27 IKF=7 ISE=1.2E-13 NE=1.43 BR=70
+ VAR=14 IKR=.6 ISC=12.04E-13 NC=1.4474 NF=.999 NR=.982 RB=.3 RE=.065
+ RC=.04 CJE=410E-12 TF=.65E-9 CJC=140E-12 TR=12E-9 MJC=.35 VJC=.305
*
.ENDS ZDT749
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD717MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Pmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3
+ VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03
+ RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576
+ CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9
+ TR=2E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD718MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Pmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9
+ TR=23.7E-9
.ENDS
*
*$
*
*Zetex ZDT1048 Spice Model v1.0 Last Revised 12/09/08
*
.SUBCKT ZDT1048 1 2 3 4 5 6 7 8
* E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 NPN IS=13.73E-13 NF=1.0 BF=550 IKF=8.0 VAF=120
+ ISE=2.6E-13 NE=1.38 NR=1.0 BR=300 IKR=6 VAR=15
+ ISC=1.6E-12 NC=1.4 RB=0.1 RE=0.022 RC=0.010
+ CJC=136E-12 CJE=559.1E-12 MJC=0.267 MJE=0.299
+ VJC=0.420 VJE=0.533 TF=600E-12 TR=3E-9
*
.ENDS ZDT1048
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*
*Zetex ZDT1049 Spice Model v1.0 Last Revised 12/09/08
*
.SUBCKT ZDT1049 1 2 3 4 5 6 7 8
* E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100
+ ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
+ ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007
+ CJC=136E-12 CJE=550E-12 MJC=0.352 MJE=0.36
+ VJC=0.554 VJE=0.726 TF=400E-12 TR=6.9E-9
*
.ENDS ZDT1049
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD617MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Nmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.92E-13 BF=500 IKF=5 VAF=34.6
+ ISE=1.27E-13 NE=1.425 NR=1 BR=280 IKR=2 VAR=12.25
+ ISC=6.138E-13 NC=1.46 RB=0.1 RE=0.025 RC=0.017
+ CJC=76E-12 MJC=0.2981 VJC=0.4414 CJE=230E-12
+ MJE=0.3569 VJE=0.7042 TF=1.12E-9 TR=2.15E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD618MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Nmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12
+ TF=0.95E-9 TR=2.25E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=17Jun2013
*VERSION=1
*
*DIODES_INC_SPICE_MODEL_DSS20200L
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/10/2012
*VERSION=1
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=17/9/2009
*VERSION=1
*DIODES_INC_SPICE_MODEL DXTP19020DP5
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=08/04/2013
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=18/09/2014
*VERSION=1
*
*
.MODEL ZXTP19020CFF PNP IS=6.3E-13 NF=1 BF=400 VAF=21.5 ISE=1.2E-13 IKF=4.6
+NE=1.42 BR=140 VAR=4.9 ISC=1.3E-13 NC=1.25 RC=0.0045 RB=0.15 RE=0.009
+CJC=145E-12 MJC=0.33 VJC=0.6 CJE=379E-12 MJE=0.47 VJE=0.85 TF=0.4E-9
+TR=4.5E-9 XTB=1.4 QUASIMOD=1 RCO=0.18 GAMMA=0.3E-9 TRC1=.003 TRB1=.003
+TRE1=.003
*
*$
* (c) 2014 Diodes Inc
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=18/09/2014
*VERSION=1
*
.MODEL ZXTP19020DFF PNP IS=8.5E-13 NF=1 BF=530 VAF=25.8 ISE=1.2E-13
+ IKF=3.8 NE=1.48 BR=130 VAR=5.15 ISC=0.8E-13 NC=1.23 RC=0.0045 RB=0.15
+ RE=0.009 QUASIMOD=1 RCO=0.27 GAMMA=2E-10 CJC=112E-12 MJC=0.4 VJC=0.6
+ CJE=345E-12 MJE=0.53 VJE=0.95 TF=0.59E-9 TR=4.2E-9 TRC1=.003 TRB1=.003
+ TRE1=.003 XTB=1.4
*
*$
* (c) 2014 Diodes Inc
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL ZXTP19020DG
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=7/01/2013
*VERSION=1
*DIODES_INC_SPICE_MODEL ZXTP19020DZ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=7/01/2013
*VERSION=1
+TRB1=0.007 XTB=1.4
*
*$
*
*DIODES_INC_SPICE_MODEL ZXTP25012EZ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL
*DATE=9Apr2012
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=21/01/2011
*VERSION=1
*
.MODEL ZXTP26020DMF PNP IS=5.5e-13 NF=1.005 ISE=1.2e-13 NE=1.55 BF=590
+ VAF=21 IKF=2 ISC=1.8e-13 NC=1.39 BR=52 VAR=5.7 IKR=0.6 RE=0.067
+ RB=0.33 RC=0.012 CJE=147e-12 VJE=0.88 MJE=0.48 CJC=51e-12 VJC=0.51
+ MJC=0.33 TF=4.5e-10 TR=5.6e-9 QUASIMOD=1 RCO=0.66 GAMMA=1.3e-9
+ XTB=1.5 TRE1=0.004 TRB1=0.003 TRC1=0.004
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTP717MA PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3
+ VAR=5.64 ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03
+ RC=0.025 CJC=116.9E-12 MJC=0.3456 VJC=0.4576
+ CJE=223.6E-12 MJE=0.4803 VJE=0.9091 TF=1.2E-9
+ TR=2E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTP718MA PNP IS=6.8E-13 BF=480 IKF=2 VAF=23
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9
+ TR=23.7E-9
*
*$
*DIODES_INC_SPICE_MODEL DSS2515M
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=02Apr2012
*VERSION=1
*DIODES_INC_SPICE_MODEL_DSL12AW
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=24/07/2015
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JAN2011
*VERSION=1
*
.MODEL BST39 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500
+ ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12
+ NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7
+ CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8
+ TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=29May2013
*VERSION=1
*
*
.MODEL DXT458P5 NPN IS=5.32E-14 NF=1 BF=230 IKF=1.5 VAF=1500
+ ISE=2.1E-14 NE=1.385 NR=1.05 BR=8 IKR=0.7 VAR=64 ISC=6.42E-12
+ NC=1.25 RB=0.5 RE=0.224 RC=0.134 QUASIMOD=1 RCO=80 GAMMA=4E-7
+ CJC=9.5E-12 MJC=0.32 VJC=0.4 CJE=115E-12 MJE=0.37 VJE=0.8
+ TF=1.3E-9 TR=16E-6 TRC1=.004 TRB1=.004 TRE1=.004 XTB=1.4
*
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL DZT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=1
*
.MODEL DXT5551P5 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL DZT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*
*
.MODEL FCX495 NPN IS=1E-13 NF=1 BF=205 IKF=4 VAF=300 ISE=1E-13
+ NE=1.5 NR=0.98 BR=24 VAR=45 ISC=1e-13 NC=1.2 RB=0.4 RE=0.07
+ RC=0.08 RCO=17 GAMMA=9E-8 CJC=15.3E-12 MJC=0.27 VJC=0.35 CJE=114E-12
+ MJE=0.33 VJE=0.68 TF=0.8E-9 TR=120e-9 XTB=1.4 QUASIMOD=1
*
*$
*
.MODEL FMMT455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14
+NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1
+RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505
+MJC=.455
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*
.MODEL MJD340 NPN IS=2.3E-13 NF=1.003 BF=150 IKF=1.35
+ VAF=295 RCO=20 GAMMA=300E-9 ISE=1.1E-13 NE 1.33 NR=1.001
+ BR=8 VAR=43 ISC=1.8E-13 NC=1.19 RC=0.085 RB 0.35 RE 0.2
+ CJC=45E-12 MJC=0.41 VJC=0.6 CJE=352E-12 TF=0.6E-9 TR=5.5E-7
+ XTB=1.4 QUASIMOD=1
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL MMBT5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$
*SRC=MMBTA42;DI_MMBTA42;BJTs NPN; Si; 300V 0.500A 219MHz Diodes Inc. NPN
Transistor
.MODEL DI_MMBTA42 NPN (IS=51.0f NF=1.00 BF=194 VAF=312
+ IKF=0.182 ISE=34.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.450 RE=11.6 RB=46.3 RC=4.63
+ XTB=1.5 CJE=58.7p VJE=1.10 MJE=0.500 CJC=18.9p VJC=0.300
+ MJC=0.300 TF=481p TR=115n EG=1.12 )
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL MMST5551 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$
*
.MODEL ZTX455 NPN IS =5.6E-14 BF =260 VAF=660 NF =.992 IKF=.155 ISE=3.1E-14
+NE =1.2502 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13 RB =1.1
+RE =.161 RC =.0339 CJC=11.6E-12 TF =.75E-9 CJE=53.5E-12 TR =100E-9 VJC=.505
+MJC=.455
*
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTN5551FL NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*$
*
*Diodes DMMT5451 Spice Model v1.0 Last Revised 17/02/09
*
*.MODEL 5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=E1 6=C1
* 2=B1 5=B2
* 3=C2 4=E2
*
.SUBCKT MMDT5401 1 2 3 4 5 6
Q1 6 2 1 Mod1
Q2 3 5 4 Mod1
*
.MODEL Mod1 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
.ENDS
*
*$
.SUBCKT ZDT795A 1 2 3 4 5 6 7 8
* E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 PNP IS=7E-13 NF=1.005 BF=500 IKF=2 VAF=62 ISE=1E-14
+ NE=1.4 NR=1 BR=10.1 VAR=25 ISC=4.1E-13 IKR=2 NC=1.07 RB=0.45
+ RE=0.06 RC=0.14 CJC=52E-12 MJC=0.515 VJC=0.65 CJE=280E-12
+ TF=0.72E-9 TR=58E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1
+ RCO=4.3 GAMMA=0.5E-7
*
.ENDS ZDT795A
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=E1 6=C1
* 2=B1 5=B2
* 3=C2 4=E2
*
.SUBCKT MMDT5551 1 2 3 4 5 6
Q1 6 2 1 Mod1
Q2 3 5 4 Mod1
*
.MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
.ENDS
*
*$
*
.SUBCKT ZDT694 1 2 3 4 5 6 7 8
* E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 NPN IS=1.59E-12 NF=1.001 BF=1009 IKF=0.26 VAF=45
+ ISE=.253E-12 NE=1.445 NR=1 BR=40 IKR=1 VAR=30 ISC=0.326E-12
+ NC=1.075 RB=0.2 RE=0.065 RC=0.075 CJC=35.5E-12 MJC=.465
+ VJC=.515 CJE=258E-12 TF=.763E-9 TR=130E-9
*
.ENDS ZDT694
*
*Diodes DXT5401 Spice Model v1.0 Last Revised 16/02/09
*
.MODEL DXT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=18/09/2014
*VERSION=1
*
.MODEL DXTA92 PNP IS =4E-14 NF =1.01 BF =105
+IKF=800E-3 VAF=300 ISE=8E-15 NE =1.38 RCO=59
+GAMMA=0.85E-7 NR =1 BR =4 IKR=55e-3 VAR=40
+ISC=8e-12 NC =1.3 RB =9 RE =0.1 RC =0.1 QUASIMOD=1
+CJC=16.9E-12 MJC=0.382 VJC=0.536 CJE=80.9E-12
+TF =0.7E-9 TR =1.6e-6 XTB=1.4
*
*$
*
* (c) 2014 Diodes Inc
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL DZT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*
.MODEL FCX555 PNP IS=1.3E-13 NF=1 BF=220 IKF=1.2
+ VAF=110 ISE=3E-14 NE=1.5 RCO=12 GAMMA=3E-8
+ NR=1 BR=8 VAR=15.5 ISC=1e-13 NC=1.06
+ RB=5 RE=0.2 RC=0.2 QUASIMOD=1 XTB=1.4
+ CJC=28E-12 MJC=0.45 VJC=0.736 CJE=112E-12
+ TF=0.7E-9 TR=2e-7
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*
.MODEL MJD350 PNP IS=1.305E-13 NF=1.0004 BF=120 IKF=.5 VAF=1060
+ ISE=7.5E-13 NE=1.5 RCO=15 GAMMA=5E-8 NR=1 ISC=2E-13 NC=1.8
+ VAR=50 BR=3.2 IKR=.5 RB=.1 RE=.19 RC=.2 CJC=48E-12 MJC=.56
+ VJC=.775 CJE=445E-12 TF=3.03E-9 TR=1500E-9 NK=0.75 XTB=1.6
+ TRE1=.0025 TRB1=.0025 TRC1=.0025 QUASIMOD=1
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL MMBT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*
.MODEL MMST5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*SRC=MMSTA92;DI_MMSTA92;BJTs PNP; Si; 300V 0.100A 60.0MHz Diodes Inc. BJTs
.MODEL DI_MMSTA92 PNP (IS=53.7f NF=1.00 BF=164 VAF=312
+ IKF=66.8m ISE=25.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.165 RE=0.565 RB=2.26 RC=0.226
+ XTB=1.5 CJE=52.0p VJE=1.10 MJE=0.500 CJC=16.8p VJC=0.300
+ MJC=0.300 TF=2.46n TR=426n EG=1.12 )
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23JUL2010
*VERSION=2
*
.MODEL ZTX958 PNP IS=1.601E-12 NF=1.01 BF=175 IKF=2.8 VAF=530 ISE=1.7E-13
+ NE=1.46 NR=1.05 BR=5 IKR=0.8 VAR=28 ISC=5E-11 NC=1.7 RB=0.25 RE=0.038
+ RC=0.035 CJC=113E-12 MJC=0.507 VJC=0.595 CJE=1.05E-9 TF=1.26E-9 TR=1.28E-6
+ XTB=1.4 TRB1=0.005 TRE1=0.005 QUASIMOD=1 VO=10 RCO=7 GAMMA=0.5E-7
*
*$
*DIODES_INC_SPICE_MODEL ZX5T955G
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1
*DIODES_INC_SPICE_MODEL ZX5T955Z
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1
*DIODES_INC_SPICE_MODEL ZXTP2014G
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1
*DIODES_INC_SPICE_MODEL ZXTP2014Z
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTP5401FL PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTP5401G PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL ZXTP5401Z PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=22FEB2011
*VERSION=1
*
.MODEL ZXTP558L PNP IS=7.84E-14 NF=1 BF=210 IKF=1.8 VAF=349 ISE=3.35E-14
+ NE=1.69 NR=1 BR=3.4 IKR=0.15 VAR=82 ISC=9.42E-12 NC=1.05 RB=0.5 RE=0.1
+ RC=0.1 QUASIMOD=1 RCO=54 GAMMA=13e-6 CJC=20.5E-12 MJC=0.38 VJC=0.44
+ CJE=115E-12 MJE=0.43 VJE=0.85 TF=0.9E-9 TR=18E-5 TRC1=.015 TRB1=.015
+ TRE1=.015 XTB=1.4
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=06Sep2013
*VERSION=1
*
*
.MODEL DXTP560BP5 PNP IS=4E-14 NF=0.98 BF=140 VAF=104 ISE=1E-12 NE=1.54
+RCO=100 GAMMA=1.5E-7 NR=1 BR=2 VAR=100 ISC=1e-13 NC=2 IKR=10E-3
+RB=25 RE=.3 RC=.3 CJC=29E-12 MJC=0.364 VJC=0.511 CJE=100.3E-12
+MJE=0.419 VJE=0.877 TF=2E-10 TR=1.5e-6 XTB=1.5 QUASIMOD=1
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=CADENCE PSPICE 15.7
*DATE=01DEC2010
*VERSION=1
*
.MODEL ZXTN10150D NPN IS=7.5E-13 NF=1.008 BF=440 IKF=3
+ VAF=220 ISE=1E-13 NE=1.4 NR=1.008 BR=36 IKR=0.5
+ VAR=39.6 ISC=1E-12 NC=1.2 RB=0.8 RE=0.026 RC=0.046
+ CJC=26E-12 MJC=0.4 VJC=0.4 CJE=220E-12 MJE=0.35 VJE=0.73
+ TF=0.5E-9 TR=380E-9 RCO=9 GAMMA=2E-7 QUASIMOD=1
+ TRE1=0.0045 TRB1=0.0035 TRC1=0.0045 XTB=1.5 XTI=4
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=27-Jan-2014
*VERSION=1
*
*
* (c) 2014 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=27-Jan-2014
*VERSION=1
*
*
* (c) 2014 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL_2DA1971
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/10/2012
*VERSION=2
*DIODES_INC_SPICE_MODEL_DA1201Y
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=06/07/2012
*VERSION=1
*DIODES_INC_SPICE_MODEL DXT2014P5
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Dec2012
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=14-Jan-2014
*VERSION=1
*
.MODEL DXT696BK NPN IS=.98476E-12 NF=.999 BF=705 IKF=0.8 VAF=235
+ISE=8.1E-14 NE=1.36 NR=1.002 BR=20 IKR=.8 VAR=26 ISC=.66E-12
+NC=1.15 RB=.07 RE=.125 RC=.098 CJC=25.4E-12 MJC=.47 VJC=.445
+CJE=270E-12 TF=1.301E-9 TR =690E-9 XTB=1.4
+QUASIMOD=1 RCO=24 GAMMA=75E-8
*
* (c) 2014 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JUL2010
*VERSION=2
*
.MODEL DZT5551Q NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
*
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2013
*VERSION=1
*
*
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2013
*VERSION=1
*
*
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=06/01/2009
*VERSION=1
*
.MODEL DSS60601MZ4 NPN IS=1.0085E-12 NF=1.0001 BF=210 IKF=4 VAF=158
+ ISE=7E-13 NE=1.38 NR=0.9988 BR=90 IKR=3 VAR=46 ISC=4.6515E-13
+ NC=1.334 RB=0.2 RE=0.018 RC=0.016 CJC=93E-12 MJC=0.4348
+ VJC=0.6477 CJE=0.63E-9 TF=0.75E-9 TR=20E-9 XTB=1.5
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=19NOV2010
*VERSION=1
*
.MODEL DXT2010P5 NPN IS =1.0085E-12 NF =1.0001 BF =210 IKF=4 VAF=158
+ ISE=7E-13 NE =1.38 NR =0.9988 BR =90 IKR=3 VAR=46 ISC=4.6515E-13
+ NC =1.334 RB =0.2 RE =0.018 RC =0.016 CJC=93E-12 MJC=0.4348
+ VJC=0.6477 CJE=0.63E-9 TF =0.75E-9 TR =20E-9 XTB=1.5
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=19JAN11
*VERSION=1
*
.MODEL DXT2011P5 NPN IS=6E-13 NF=1 BF=240 IKF=10 VAF=500 ISE=1.8E-13
+ NE=1.42 NR=1 BR=40 IKR=1 VAR=28 ISC=8E-13 NC=1.18 RC=0.007 RB=0.15
+ RE=0.019 CJC=84E-12 MJC=0.35 VJC=0.43 CJE=700E-12 MJE=0.37 VJE=0.78
+ QUASIMOD=1 RCO=1.2 GAMMA=1.3E-8 TF=0.85E-9 TR=75E-9 XTB=1.4
+ TRC1=0.003 TRB1=0.003 TRE1=0.003
*
*$
*SRC=DXT651;DI_DXT651;BJTs NPN; Si; 60.0V 3.00A 200MHz
.MODEL DI_DXT651 NPN (IS=7.42f NF=1.00 BF=206 VAF=139
+ IKF=1.98 ISE=13.4f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=3.00 RE=32.0m RB=0.128 RC=12.8m
+ XTB=1.5 CJE=390p VJE=1.10 MJE=0.500 CJC=48.3p VJC=0.300
+ MJC=0.300 TF=626p TR=76.3n EG=1.12 )
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JAN2011
*VERSION=1
*
.MODEL FMMT451 NPN IS =3.941445E-14 BF =175 VAF=109.45 NF =1 IKF=.8
+ISE=7.4025E-15 NE =1.3 BR =20.5 VAR=14.25 NR =.974 IKR=.1 ISC=3.157E-13
+NC =1.2 RB =1.1 RE =.1259 RC =.0539 CJE=63E-12 TF =.75E-9 CJC=15.8E-12
+TR =85E-9 VJC=.505 MJC=.39
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23JUN10
*VERSION=1
*
.MODEL FMMTA06 NPN IS=3.8E-14 NF=1.008 BF=150 IKF=2 VAF=300 XTB=1.4
+ ISE=1E-14 NE=1.22 NR=1.015 BR=6 IKR=1.8 VAR=48 ISC=5E-13 NC=1.2
+ RB=1 RE=0.155 RC=0.061 CJC=18E-12 MJC=0.31 VJC=0.45 CJE=65E-12
+ MJE=0.34 VJE=0.7 TF=8E-10 TR=6E-7 QUASIMOD=1 RCO=17 GAMMA=1E-7 VO=20
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*
.MODEL MJD31C NPN IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154
+ ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13
+ NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534
+ VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=09FEB2011
*VERSION=2
*
.MODEL ZXTN19060CG NPN IS=6E-13 NF=1 BF=375 IKF=9 VAF=176 ISE=7E-14 NE=1.42
+NR=1 BR=65 IKR=.12 VAR=23.3 ISC=3E-13 NC=1.27 RB=0.17 RE=0.007 RC=0.005
+CJC=62E-12 MJC=0.38 VJC=0.51 CJE=379E-12 MJE=0.38 VJE=0.8 TF=10E-10
+TR=2.5E-8 XTB=1.4 TRC1=.01 TRB1=.01 TRE1=.01 QUASIMOD=1 RCO=1.1
+GAMMA=1.6E-8
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/04/2009
*VERSION=2
*
.MODEL ZXTN2018F NPN IS=3E-13 NF=1 BF=245 IKF=8.5 VAF=87 ISE=1.3E-13
+ NE=1.42 NR=1 BR=50 IKR=1 VAR=33 ISC=7e-13 NC=1.4 RE=0.0077 RB=0.15
+ RC=0.0049 QUASIMOD=1 RCO=0.75 GAMMA=3E-9 VO=11.5 CJE=610E-12 VJE=0.7
+ MJE=0.36 CJC=90E-12 VJC=0.6 MJC=0.36 TF=8.8E-10 TR=2.5e-8 XTB=1.4
+ TRE1=0.004 TRB1=0.004 TRC1=0.004
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=26JUL2010
*VERSION=1
*
.MODEL ZXTN2038F NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
+ ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69 ISC=1.6E-12
+ NC=1.38 RB=0.065 RE=0.109 RC=0.075 CJC=17.2E-12 MJC=0.3429
+ VJC=0.4298 CJE=96E-12 TF=0.71E-9 TR=2.5E-9
*
*$
*DIODES_INC_SPICE_MODEL ZXTN26070CV
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=10Nov2011
*VERSION=1
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTN620MA NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5
+ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12
+NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48
+MJC=0.41 TF =9E-10 TR=3.5E-8
*
*$
***********************************************************************************
******************************************************
*SRC=MMDT2227;DI_MMDT2227_NPN;BJTs NPN; Si; 40.0V 0.600A 300MHz Diodes Inc.
BJTs - Complementary
.MODEL DI_MMDT2227_NPN NPN (IS=61.0f NF=1.00 BF=410 VAF=114
+ IKF=0.121 ISE=14.8p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.300 RE=0.269 RB=1.08 RC=0.108
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=15.3p VJC=0.300
+ MJC=0.300 TF=496p TR=81.1n EG=1.12 )
*
.SUBCKT ZDT6702 1 2 3 4 5 6 7 8
* pins E2, B2, E1, B1, C1, C1, C2, C2
*
Q11 12 4 11 SUB603
Q12 12 11 3 SUB603 3.46
Q21 10 2 9 SUB702
Q22 10 9 1 SUB702 3.46
R1 5 12 0.001
R2 6 12 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13
+ NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3
+ RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9
+ XTB=1.5
*
.MODEL SUB702 PNP IS =.5E-13 BF =103 VAF=200 NF =1 IKF=.55
+ ISE=.75E-14 NE =1.5 BR =15 VAR=30 NR =1 IKR=.45 ISC=3E-13
+ NC=1.2 RB=0.3 RE=0.3 RC=0.3 CJE=140E-12 CJC=20E-12
+ VJC=0.85 MJC=0.41 TF=1E-9 TR=290E-9 XTB=1.4
*
.ENDS ZDT6702
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=E2 8=C2
* 2=B2 7=C2
* 3=E1 6=C1
* 4=B1 5=C1
*
.SUBCKT ZDT6753 1 2 3 4 5 6 7 8
Q1 11 4 3 Nmod
Q2 12 2 1 Pmod
RP1 11 5 0.001
RP2 11 6 0.001
RP3 12 7 0.001
RP4 12 8 0.001
*
.MODEL Nmod NPN IS =3.8206E-13 NF =1.0025 BF =250 IKF=1.15 VAF=154
+ ISE=1.035E-13 NE =1.3642 NR =1.0012 BR =50 IKR=0.42 VAR=38
+ ISC=7E-13 NC =1.19 RB =0.04 RE =0.0875 RC =0.06
+ CJC=45.5E-12 MJC=0.4534 VJC=0.5774 CJE=278E-12
+ TF =0.78E-9 TR =30E-9
.MODEL Pmod PNP IS =3.2007E-13 NF =1.0041 BF =200 IKF=1.6 VAF=76
+ ISE=8E-14 NE =1.57 NR =1.0008 BR =33 IKR=0.45 VAR=51
+ ISC=6E-14 NC =1.079 RB =0.087 RE =0.08 RC =0.07
+ CJC=80E-12 MJC=0.4896 VJC=0.7676 CJE=350E-12
+ TF =0.86E-9 TR =24E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC6720MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS =6.5E-13 BF =480 NF=1.003 VAF=150 IKF=1.5
+ISE=2.00E-13 NE=1.42 BR=180 NR=1.0015 VAR=55 IKR=1 ISC=4.00E-12
+NC=1.3 RB=0.04 RE=0.048 RC=0.065 CJE=2.13E-10 CJC=3.30E-11 VJC=0.48
+MJC=0.41 TF =9E-10 TR=3.5E-8
.MODEL Pmod PNP IS =6.348E-13 BF =450 IKF =1.25 VAF =30.24
+ ISE=1.375E-13 NE =1.5 NR =1.00 BR =25 IKR=0.8
+ VAR=12.6 ISC=1E-13 NC =1.093 RB =0.081 RE =0.09
+ RC =0.1 CJC=49.87E-12 MJC=0.494 VJC=0.7653
+ CJE=199E-12 MJE=0.5045 VJE=0.9617 TF =0.57E-9
+ TR =57E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23JUL2010
*VERSION=1
*PIN_ORDER P1=C1, P2=B1, P3=C2, P4=E2, P5=B2, P6=E1
*
.SUBCKT ZXTD4591E6 P1 P2 P3 P4 P5 P6
Q1 P1 P2 P6 Nmod
Q2 P3 P5 P4 Pmod
*
.MODEL Nmod NPN IS=3.05E-13 NF=1.0034 BF=200 IKF=0.8 VAF=165
+ ISE=8.0191E-14 NE=1.4126 NR=1.001 BR=50 IKR=0.6 VAR=69
+ ISC=1.6E-12 NC=1.38 RB=0.065 RE=0.109 RC=0.075
+ CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12
+ TF=0.71E-9 TR=2.5E-9
.ENDS ZXTD4591E6
.MODEL Pmod PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
+ NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
+ RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
+ MJC=0.415
*
*$
***********************************************************************************
******************************************************
*SRC=MMDT2907A;DI_MMDT2907A;BJTs PNP; Si; 60.0V 0.600A 300MHz Diodes Inc. BJTs
- Single device of dual
.MODEL DI_MMDT2907A PNP (IS=61.2f NF=1.00 BF=410 VAF=139
+ IKF=0.279 ISE=22.4p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.690 RE=0.361 RB=1.44 RC=0.144
+ XTB=1.5 CJE=27.6p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=491p TR=81.1n EG=1.12 )
***********************************************************************************
******************************************************
.SUBCKT ZDT751 1 2 3 4 5 6 7 8
* E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13
+ NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07
+ RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705
+ MJC=.46
*
.ENDS ZDT751
*
*$
.SUBCKT ZDT1053 1 2 3 4 5 6 7 8
* E2 B2 E1 B1 C1 C1 C2 C2
Q1 9 4 3 Mod1
Q2 10 2 1 Mod1
R1 5 9 0.001
R2 6 9 0.001
R3 7 10 0.001
R4 8 10 0.001
*
.MODEL Mod1 NPN IS=2.1E-12 NF=1.0 BF=600 IKF=2.2 VAF=100
+ ISE=0.9E-13 NE=1.25 NR=0.99 BR=150 IKR=2.5 VAR=15
+ ISC=5.0E-10 NC=1.76 RB=0.1 RE=0.028 RC=0.016
+ CJC=75.1E-12 CJE=520E-12 MJC=0.415 MJE=0.367
+ VJC=0.512 VJE=0.766 TF=550E-12 TR=22E-9
*
.ENDS ZDT1053
*
*$
*DIODES_INC_SPICE_MODEL BC856B
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=21May2012
*VERSION=1
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=1
*
.MODEL BSR33 PNP IS=2E-13 NF=1 BF=300 IKF=0.8
+ VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9
+ NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25
+ RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1
+ CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12
+ TF=0.8E-9 TR=70e-9 XTB=1.4
*
*$
*SRC=DPBT8105;DI_DPBT8105;BJTs PNP; Si; 80.0V 1.00A 150MHz Diodes Inc. BJT PNP
.MODEL DI_DPBT8105 PNP (IS=101f NF=1.00 BF=410 VAF=161
+ IKF=0.304 ISE=29.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.281 RB=1.13 RC=0.113
+ XTB=1.5 CJE=117p VJE=1.10 MJE=0.500 CJC=28.4p VJC=0.300
+ MJC=0.300 TF=972p TR=162n EG=1.12 )
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=10-Dec-2014
*VERSION=1
*
*
* (c) 2014 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=06/01/2009
*VERSION=1
*
.MODEL DSS60600MZ4 PNP IS=5.3E-13 BF=220 NF=1.0 VAF=84 IKF=11
+ ISE=5E-14 NE=1.4 BR=45 NR=1 VAR=8.9 IKR=5 ISC=5E-14 NC=1.07 RE=0.015
+ RB=0.27 RC=0.022 CJE=750E-12 VJE=0.68 MJE=0.4 CJC=170E-12 VJC=0.55
+ MJC=0.4 TF=0.5E-9 TR=2.2E-8 RCO=0.22 GAMMA=5e-10 QUASIMOD=1
+ TRE1=.005 TRB1=.005 XTB=1.4
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=19JAN11
*VERSION=1
*
.MODEL DXT2013P5 PNP IS=1E-13 NF=1 BF=200 VAF=44 ISE=1.3E-13 IKF=8 NE=1.6
+NR=1 BR=22 VAR=16 ISC=1.3E-13 IKR=4 NC=1.4 RC=0.017 RB=0.13 RE=0.019
+CJC=136E-12 MJC=0.41 VJC=0.50 CJE=570E-12 MJE=0.45 VJE=0.86 TF=0.7E-9
+TR=45E-9 XTB=1.5 QUASIMOD=1 RCO=0.7 GAMMA=5E-10
*
*$
*
.MODEL FMMT591 PNP IS =3.2E-14 BF =170 VAF=45 NF =0.977 IKF=1.25 ISE=7E-15
+NE =1.35 BR =50 VAR=50 NR =.986 IKR=0.15 ISC=0.9E-14 NC =1.08 RB =0.16
+RE =0.195 RC =0.185 CJE=104E-12 TF =0.7E-9 CJC=30.5E-12 TR =3E-9 VJC=0.395
+MJC=0.415
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=1
*
.MODEL FMMTA56 PNP IS=2E-13 NF=1 BF=300 IKF=0.8
+ VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9
+ NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25
+ RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1
+ CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12
+ TF=0.8E-9 TR=70e-9 XTB=1.4
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JUL2010
*VERSION=1
*
.MODEL MJD32C PNP IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76
+ ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14
+ NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896
+ VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23FEB2011
*VERSION=1
*
.MODEL ZXT951K PNP IS=1.3766E-12 NF=1.013 BF=187 IKF=5.0 VAF=66.3
+ ISE=1.4E-13 NE=1.41 NR=1.0099 BR=56 IKR=0.9 VAR=33 ISC=1.7E-12
+ NC=1.4 RB=0.029 RE=0.020 RC=0.0255 CJC=287E-12 MJC=0.4522
+ VJC=0.4956 CJE=1.15E-9 TF=0.83E-9 TR=20E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=9-Sep-2014
*VERSION=1
*
*
* (c) 2014 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL BCX5516
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=24-APR-2013
*VERSION=1
*DIODES_INC_SPICE_MODEL BCP5516
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=24-APR-2013
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=04-Jun-2014
*VERSION=1
*
.MODEL DXT2012P5 PNP IS=5.3E-13 NF=1.0 BF=220 IKF=11 VAF=84 ISE=5E-14 NE=1.4
+NR=1 BR=45 VAR=8.9 ISC=5E-14 IKR=5 NC=1.07 RB=0.27 RE=0.015 RC=0.022
+CJC=170E-12 MJC=0.4 VJC=0.55 CJE=750E-12 MJE=0.4 VJE=0.68 TF=0.5E-9
+TR=2.2E-8 XTB=1.4 TRB1=.005 TRE1=.005 QUASIMOD=1 RCO=0.22 GAMMA=5e-10
*
* (c) 2014 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2013
*VERSION=1
*
*
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=10-Dec-2014
*VERSION=1
*
*
* (c) 2014 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*DIODES_INC_SPICE_MODEL BC846BLP4
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=27Mar2013
*VERSION=1
.MODEL BC846BLP4 NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97
NC=1.1 ISC=10E-15
+ RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40
IKF=48m VAR=24.0 IKR=90.0m)
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2013
*VERSION=1
*
*
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=1
*
.MODEL BCX5316 PNP IS=2E-13 NF=1 BF=300 IKF=0.8
+ VAF=44 ISE=1E-13 NE=1.4 RCO=4.5 GAMMA=5E-9
+ NR=1 BR=20 IKR=0.2 VAR=10 ISC=2e-13 NC=1.25
+ RB=0.15 RE=0.15 RC=0.2 QUASIMOD=1
+ CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12
+ TF=0.8E-9 TR=70e-9 XTB=1.4
*
*$
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=10-Dec-2015
*VERSION=1
*
* (c) 2015 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=31May2016
*VERSION=1-Q
*
.MODEL MJD31CQ NPN (IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154
+ ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13
+ NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534
+ VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9)
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=31May2016
*VERSION=1-Q
*
.MODEL MJD32CQ PNP (IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76
+ ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14
+ NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896
+ VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9)
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=31May2016
*VERSION=1-Q
*
.MODEL MJD31CUQ NPN (IS=3.8206E-13 NF=1.0025 BF=250 IKF=1.15 VAF=154
+ ISE=1.035E-13 NE=1.3642 NR=1.0012 BR=50 IKR=0.42 VAR=38 ISC=7E-13
+ NC=1.19 RB=0.04 RE=0.0875 RC=0.06 CJC=45.5E-12 MJC=0.4534
+ VJC=0.5774 CJE=278E-12 TF=0.78E-9 TR=30E-9)
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=31May2016
*VERSION=1-Q
*
.MODEL MJD32CUQ PNP (IS=3.2007E-13 NF=1.0041 BF=200 IKF=1.6 VAF=76
+ ISE=8E-14 NE=1.57 NR=1.0008 BR=33 IKR=0.45 VAR=51 ISC=6E-14
+ NC=1.079 RB=0.087 RE=0.08 RC=0.07 CJC=80E-12 MJC=0.4896
+ VJC=0.7676 CJE=350E-12 TF=0.86E-9 TR=24E-9)
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=23FEB2011
*VERSION=1
*
.MODEL ZXT849K NPN IS =5.8591E-13 NF =0.9919 BF =230 IKF=18 VAF=90
+ ISE=2.0067E-13 NE =1.4 NR =0.9908 BR =180 IKR=6.8
+ VAR=20 ISC=5.3E-13 NC =1.46 RB =0.023 RE =0.0223
+ RC =0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532
+ CJE=1.21E-9 TF =1.07E-9 TR =9.3E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/01/2009
*VERSION=1
*
.MODEL 2DD2679 NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
+ NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
+ CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
+ RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
*
*$
*
*DIODES_INC_SPICE_MODEL 2DD1664R
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=14/07/2014
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=06/01/09
*VERSION=1
*
.MODEL DSS4540X NPN IS=1.35E-12 NF=1.0 BF=600 IKF=5.0 VAF=120
+ ISE=0.6E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15
+ ISC=1.0E-10 NC=1.7 RB=0.1 RE=0.023 RC=0.010
+ CJC=90.36E-12 CJE=547.5E-12 MJC=0.385 MJE=0.357
+ VJC=0.5 VJE=0.741 TF=600E-12 TR=8E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=1
*
.MODEL DSS4240T NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=2
*
.MODEL DSS4240V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=2
*
.MODEL DSS4140U NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=2
*
.MODEL DSS4140V NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=21Oct2013
*VERSION=1
*
.MODEL DXT690BP5 NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37
+NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027
+CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9
+TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002
+TRC1=0.002
*
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*
.MODEL ZXTN619MA NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84
+ ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4
+ VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033
+ RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12
+ TF=0.78E-9 TR=9E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/01/2009
*VERSION=1
*
.MODEL 2DC4672 NPN IS=2.218E-13 NF=.9956 BF=230 IKF=2 VAF=100 ISE=2.9E-14
+ NE=1.35 NR=.995 BR=56 IKR=1 VAR=30 ISC=2.971E-13 NC=1.321 RB=.04
+ RE=.075 RC=.069 CJC=51E-12 MJC=.42 VJC=.595 CJE=318E-12 TF=.77E-9
+ TR=27E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DD2656 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84
+ ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12
+ NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371
+ VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=13OCT2010
*VERSION=1
*
.MODEL DSS30101L NPN IS=6.8E-13 BF=700 NF=1.005 VAF=100 IKF=2.8
+ ISE=6E-14 NE=1.4 BR=42 NR=1 VAR=14 IKR=1 ISC=4.8E-13 NC=1.44
+ RE=0.02 RB=1 RC=0.032 CJE=141E-12 VJE=0.84 MJE=0.4 CJC=31E-12
+ VJC=0.55 MJC=0.4 TF=0.59E-9 TR=6E-9 RCO=1.7 GAMMA=3E-8
+ QUASIMOD=1 XTB=1.35 TRE1=0.0045 TRB1=0.0035 TRC1=0.0045
*
*$
*DIODES_INC_SPICE_MODEL DN0150ALP4
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=17Aug2012
*VERSION=1.0
.MODEL DN0150ALP4 NPN (IS=26E-15 NF=1 BF=180 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15
NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m
RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1)
*DIODES_INC_SPICE_MODEL DN0150BLP4
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=17Aug2012
*VERSION=1.0
.MODEL DN0150BLP4 NPN (IS=26E-15 NF=1 BF=260 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15
NC=1.1 NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m
RE=500m VAF=30 IKF=.5 XTB=1.8 NK=1.1)
***********************************************************************************
******************************************************
*SRC=LBN150B01;DI_LBN150B01_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc. BJTs
- Complementary
.MODEL DI_LBN150B01_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283
+ XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300
+ MJC=0.300 TF=450p TR=70.2n EG=1.12 )
***********************************************************************************
******************************************************
*SRC=MMDT3946;DI_MMDT3946_NPN;BJTs NPN; Si; 40.0V 0.200A 347MHz Diodes Inc.
BJTs - Complementary
.MODEL DI_MMDT3946_NPN NPN (IS=5.81e-016 NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=2.28p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.750 RE=0.707 RB=2.83 RC=0.283
+ XTB=1.5 CJE=9.67p VJE=1.10 MJE=0.500 CJC=6.86p VJC=0.300
+ MJC=0.300 TF=450p TR=70.2n EG=1.12 )
***********************************************************************************
******************************************************
*SRC=MMDT4413;DI_MMDT4413_NPN;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc.
BJTs - Complementaryl
.MODEL DI_MMDT4413_NPN NPN (IS=60.7f NF=1.00 BF=410 VAF=114
+ IKF=0.219 ISE=19.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.540 RE=85.8m RB=0.343 RC=34.3m
+ XTB=1.5 CJE=36.2p VJE=1.10 MJE=0.500 CJC=15.4p VJC=0.300
+ MJC=0.300 TF=539p TR=84.1n EG=1.12 )
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=E2 8=C2
* 2=B2 7=C2
* 3=E1 6=C1
* 4=B1 5=C1
*
.SUBCKT ZDT6790 1 2 3 4 5 6 7 8
Q1 11 4 3 Nmod
Q2 12 2 1 Pmod
RP1 11 5 0.001
RP2 11 6 0.001
RP3 12 7 0.001
RP4 12 8 0.001
*
.MODEL Nmod NPN IS=1.5E-12 NF=1 BF=1000 IKF=3 VAF=60 ISE=4E-13 NE=1.37
+ NR=1 BR=123 IKR=1 VAR=14.5 ISC=4E-13 NC=1.34 RB=0.1 RE=0.045 RC=0.027
+ CJE=250E-12 VJE=0.68 MJE=0.36 CJC=59E-12 VJC=0.49 MJC=0.36 TF=0.77E-9
+ TR=18E-9 RCO=0.93 GAMMA=5E-9 QUASIMOD=1 XTB=1.4 TRE1=0.002 TRB1=0.002
+ TRC1=0.002
.MODEL Pmod PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75
+ VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
+ ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
+ MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4
+ TRE1=.0025 TRB1=.0025 TRC1=.0025
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=C1 6=E1
* 2=B1 5=B2
* 3=C2 4=E2
*
.SUBCKT ZXTC2045E6 1 2 3 4 5 6
Q1 1 2 6 Nmod
Q2 3 5 4 Pmod
*
.MODEL Nmod NPN IS =2.5E-13 NF =1 BF =600 IKF=1 VAF=51 ISE=2E-13
+ NE =1.4 NR =1 BR =150 IKR=.5 VAR=25 ISC=1e-13 NC =1.47 RB =0.5
+ RE =0.055 RC =0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF =0.8E-9
+ TR =30e-9
.MODEL Pmod PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25
+ ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18
+ RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12
+ VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=C1 6=E1
* 2=B1 5=B2
* 3=C2 4=E2
*
.SUBCKT ZXTC2063E6 1 2 3 4 5 6
Q1 1 2 6 Nmod
Q2 3 5 4 Pmod
*
.MODEL Nmod NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
+NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
+CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
+RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
.MODEL Pmod PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
+ NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
+ RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
+ MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
+ TRC1=0.003 QUASIMOD=1
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=2
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC4591AMC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS =3.05E-13 NF =1.0034 BF =650 IKF=0.8 VAF=165
+ ISE=8.0191E-14 NE =1.4126 NR =1.001 BR =120 IKR=0.6 VAR=69
+ ISC=1.6E-12 NC =1.38 RB =0.065 RE =0.109 RC =0.075
+ CJC=17.2E-12 MJC=0.3429 VJC=0.4298 CJE=96E-12
+ TF =0.71E-9 TR =2.5E-9
.MODEL Pmod PNP IS =3.0572E-13 NF =1.0103 BF =450 IKF=0.93
+ VAF=20 ISE=1.5E-14 NE =1.52 NR =1.007 BR =160 IKR=0.08 VAR=33
+ ISC=3.8736E-14 NC =1.0893 RB =0.112 RE =0.144 RC =0.156
+ CJC=42E-12 MJC=0.4449 VJC=0.3131 CJE=91E-12
+ TF =0.51E-9 TR =3.6E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTC6719MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84
+ ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4
+ VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033
+ RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12
+ TF=0.78E-9 TR=9E-9
.MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4
+ ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21
+ ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12
+ MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021
+ TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025
+ TRC1=.0025
.ENDS
*
*$
*DIODES_INC_SPICE_MODEL DST3906DJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Aug2012
*VERSION=1.1
.MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5
NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6
IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15)
* (c) 2012 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL DST857BDJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Aug2012
*VERSION=1.2
.MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15
NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2
RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7)
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD720MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Pmod
Q2 20 3 4 Pmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4
+ ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21
+ ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12
+ MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021
+ TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025
+ TRC1=.0025
.ENDS
*
*$
*DIODES_INC_SPICE_MODEL DST3904DJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=28Feb2011
*VERSION=1
.MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995
BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1
VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u)
*DIODES_INC_SPICE_MODEL DST847BDJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=15Mar2011
*VERSION=1
.MODEL DST847BDJ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97
NC=1.1 ISC=10E-15
+ RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500 MJC=0.2200 VAF=40
IKF=48m VAR=24.0 IKR=90.0m)
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=08FEB2011
*VERSION=2
*PIN_ORDER
* 1=E1 6=C1
* 2=B1 5=B2
* 3=C2 4=E2
*
.SUBCKT ZXTD09N50DE6 1 2 3 4 5 6
Q1 6 2 1 Mod1
Q2 3 5 4 Mod1
*
.MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84
+ ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12
+ NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371
+ VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=1
*PIN_ORDER
* 1=E1 6=C1
* 2=B1 5=B2
* 3=C2 4=E2
*
.SUBCKT ZXTD2090E6 1 2 3 4 5 6
Q1 6 2 1 Mod1
Q2 3 5 4 Mod1
*
.MODEL Mod1 NPN IS=2.61E-13 BF=550 IKF=0.99 VAF=84
+ ISE=7.17E-14 NE=1.4148 BR=110 IKR=0.63 VAR=51 ISC=2.25E-12
+ NC=1.45 RB=0.093 RE=0.073 RC=0.083 CJC=18E-12 MJC=0.371
+ VJC=0.435 CJE=97.7E-12 TF=0.78E-9 TR=9E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=24JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=B2
*4=E2
*5=C2
*6=C2
*7=C1
*8=C1
*
.SUBCKT ZXTD619MC 1 2 3 4 5 6 7 8
Q1 10 1 2 Nmod
Q2 20 3 4 Nmod
RP1 10 7 0.001
RP2 10 8 0.001
RP3 20 5 0.001
RP4 20 6 0.001
*
.MODEL Nmod NPN IS=5.8032E-13 NF=1.0027 BF=485 IKF=2.2 VAF=84
+ ISE=1.5933E-13 NE=1.4148 NR=1.0006 BR=110 IKR=1.4
+ VAR=51 ISC=5E-12 NC=1.45 RB=0.042 RE=0.033
+ RC=0.0375 CJC=40E-12 MJC=0.3708 VJC=0.4347 CJE=217E-12
+ TF=0.78E-9 TR=9E-9
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DA1797 PNP IS=2.715E-13 BF=170 VAF=70 NF=1.004 IKF=2.75 ISE=1E-13
+ NE=1.535 BR=23 VAR=40 NR=1.005 IKR=.55 ISC=5.15E-14 NC=1.13 RB=.07
+ RE=.065 RC=.085 CJE=360E-12 TF=.94E-9 CJC=90E-12 TR=60E-9 VJC=.705
+ MJC=.46
*
*$
*DIODES_INC_SPICE_MODEL 2DB1184Q
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Nov2012
*VERSION=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=08/01/2009
*VERSION=1
*
.MODEL 2DB1694 PNP IS=2.817E-13 BF=550 IKF=0.63 VAF=28.4
+ ISE=4.76E-14 NE=1.492 BR=42 IKR=0.293 VAR=10.21 ISC=2.7E-14
+ NC=1.124 RB=0.173 RE=0.171 RC=0.089 CJC=28.5E-12 MJC=0.506
+ VJC=0.843 CJE=92E-12 MJE=0.524 VJE=1.021 TF=0.8E-9 TR=20E-9
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/01/2009
*VERSION=1
*
.MODEL 2DB1714 PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
+ NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
+ RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
+ MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
+ TRC1=0.003 QUASIMOD=1
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=21/04/2009
*VERSION=1
*
.MODEL DSS5140U PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430
+ VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3
+ RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12
+ VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1
+ RCO=0.85 GAMMA=6e-10
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=21/04/2009
*VERSION=1
*
.MODEL DSS5140V PNP IS=3e-13 NF=1 ISE=8e-14 NE=1.47 BF=430
+ VAF=27 IKF=2.35 ISC=1e-13 NC=1.25 BR=29 VAR=9.3 IKR=0.5 RE=55e-3
+ RB=500e-3 RC=12e-3 CJE=158e-12 VJE=1.0 MJE=0.55 CJC=51e-12
+ VJC=0.7 MJC=0.45 TF=6e-10 TR=13.6e-9 XTB=1.6 QUASIMOD=1
+ RCO=0.85 GAMMA=6e-10
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=06/01/2009
*VERSION=1
*
.MODEL DSS5240T PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23
+ ISE=10E-14 NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2
+ RE=0.014 RB=0.12 RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12
+ MJC=0.41 VJC=0.62 CJE=183E-12 MJE=0.5 VJE=0.95 TF=3.9E-10
+ TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003 TRC1=0.003 QUASIMOD=1
*
*$
*DIODES_INC_SPICE_MODEL DXT790AP5
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=25Oct2012
*VERSION=1
*DIODES_INC_SPICE_MODEL MMBT3906LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Aug2012
*VERSION=1.1
.MODEL MMBT3906LP PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5
NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6
IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15)
***********************************************************************************
******************************************************
*SRC=MMBT4403T;DI_MMBT4403T;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs
.MODEL DI_MMBT4403T PNP (IS=60.4f NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )
***********************************************************************************
******************************************************
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=10/11/2009
*VERSION=1
*
.MODEL ZXT790AK PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 NK=0.75
+VAF=23.5 ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
+ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
+MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9 XTB=1.4
+TRE1=.0025 TRB1=.0025 TRC1=.0025
*
*$
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=14/11/2013
*VERSION=1
*DIODES_INC_SPICE_MODEL DSS2540M
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=02Apr2012
*VERSION=1
.MODEL DSS2540M NPN(IS=6E-14 BF=500 NF=.98 ISE=1E-14 NE=1.25 ISC=3.3E-14 BR=15 NR=1
NC=1.12 CJE=36.592p VJE=.75 MJE=.37 CJC=9.674p VJC=.5 MJC=.33 VAF=28 IKF=1 RC=.1
RE=.05 NK=.808)
* (c) 2011 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL DN0150ADJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Aug2012
*VERSION=1.2
.MODEL DN0150ADJ NPN (IS=26E-15 NF=1 BF=180 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1
NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m
VAF=30 IKF=.5 XTB=1.8 NK=1.1)
*DIODES_INC_SPICE_MODEL DN0150BDJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Aug2012
*VERSION=1.2
.MODEL DN0150BDJ NPN (IS=26E-15 NF=1 BF=260 ISE=2E-15 NE=1.4 BR=6 ISC=10E-15 NC=1.1
NR=1 CJC=3.58E-12 MJC=0.35 VJC=0.5 CJE=15.8E-12 MJE=0.36 VJE=0.73 RC=80m RE=500m
VAF=30 IKF=.5 XTB=1.8 NK=1.1)
*DIODES_INC_SPICE_MODEL DST3946DPJ
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=31Aug2012
*VERSION=1.1
.SUBCKT DST3946DPJ 1 2 3 4 5 6
Q1 6 2 1 DST3904DJ
Q2 3 5 4 DST3906DJ
.MODEL DST3904DJ NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995
BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1
VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u)
.MODEL DST3906DJ PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5
NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6
IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15)
.ENDS
*DIODES_INC_SPICE_MODEL DST847BPDP6
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=17Aug2012
*VERSION=1.1
.SUBCKT DST847BPDP6 1 2 3 4 5 6
Q1 6 2 1 DST847BDJ
Q2 3 5 4 DST857BDJ
.MODEL DST847BDJ NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97
NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500
MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m)
.MODEL DST857BDJ PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15
NC=1.05 NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2
RE=200m VAF=5 IKF=70m XTB=1.3 NK=.7)
.ENDS
*DIODES_INC_SPICE_MODEL MMBT3904LP
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=17Aug2012
*VERSION=1.0
.MODEL MMBT3904LP NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995
BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1
VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u)
*DIODES_INC_SPICE_MODEL BC847BFA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=10Jul2013
*VERSION=1.0
.MODEL BC847BFA NPN (IS=6E-15 NF=.99 BF=350 ISE=400E-18 NE=1.15 BR=1.8 NR=.97
NC=1.1 ISC=10E-15 RE=0.15 RB=4 RC=0.2 CJE=9p VJE=.7 MJE=0.3 CJC=3.146p VJC=0.500
MJC=0.2200 VAF=40 IKF=48m VAR=24.0 IKR=90.0m)
*DIODES_INC_SPICE_MODEL BC857BFA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=10Jul2013
*VERSION=1.0
.MODEL BC857BFA PNP (IS=10E-15 NF=1 BF=180 ISE=2E-15 NE=1.45 BR=4 ISC=3E-15 NC=1.05
NR=1 CJC=5.45E-12 MJC=0.33 VJC=0.59 CJE=7.53E-12 MJE=0.36 VJE=0.73 RC=.2 RE=200m
VAF=5 IKF=70m XTB=1.3 NK=.7)
*DIODES_INC_SPICE_MODEL MMBT3904FA
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_IM
*DATE=22Oct2013
*VERSION=2.0
.MODEL MMBT3904FA NPN (IS=4.5E-15 NF=1 ISE=2E-15 NE=1.4 BF=170 ISC=30E-15 NC=.995
BR=1.2 NR=1.24 CJE=8.5p VJE=.7 MJE=.345 CJC=2.9p MJC=.23 VJC=.4 RE=.1 RB=5 RC=.1
VAR=2.4 IKR=0.300 VAF=180 IKF=0.121 TF=1n TR=250u)
.MODEL MMBT3906FA PNP (IS=6E-15 BF=150 NE=1.45 NF=1 ISE=2E-15 ISC=2E-15 NR=1 BR=5
NC=1.025 CJC=6.49E-12 MJC=0.32 VJC=0.5 CJE=8.819E-12 MJE=0.35 VJE=0.7 RE=.8 RC=.6
IKF=170m NK=.70 VAF=12 XTB=1.5 QUASIMOD=1 RCO=1 EG=1.15)
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG
*DATE=18Apr2014
*VERSION=1.1
.SIMULATOR DEFAULT
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC142TU;DI_DDTC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
.MODEL DI_DDTC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
***********************************************************************************
******************************************************
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
*SRC=DDTD122JU;DI_DDTD122JU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. PBTs
.MODEL DI_DDTD122JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
***********************************************************************************
*******************************************
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
*******************************************
500mA PNP
***********************************************************************************
*******************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114EK;DI_DCX114EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
.MODEL DI_DCX114EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
***********************************************************************************
*********************************************
***********************************************************************************
****************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC142JU;DI_DDC142JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBTs
.MODEL DI_DDC142JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
***********************************************************************************
******************************************************
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
***************************************************
Note: The following SPICE model is for the transistor element. When applying this
SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/-
20% for R2/R1 ratio tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
***********************************************************************************
******************************************************
*SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc.
Matched BJTs - Single device of dual
.MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114
+ IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463
+ XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
+ MJC=0.300 TF=504p TR=94.3n EG=1.12 )
***********************************************************************************
******************************************************
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=2
*PIN_ORDER
* 1=C1 6=E1
* 2=B1 5=E2
* 3=B2 4=C2
*
.SUBCKT DMMT5401 1 2 3 4 5 6
Q1 1 2 6 Mod1
Q2 4 3 5 Mod1
*
.MODEL Mod1 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=2
*PIN_ORDER
* 1=C1 6=E1
* 2=B1 5=E2
* 3=B2 4=C2
*
.SUBCKT DMMT5551 1 2 3 4 5 6
Q1 1 2 6 Mod1
Q2 4 3 5 Mod1
*
.MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10FEB2011
*VERSION=2
*PIN_ORDER
* 1=B1 6=C1
* 2=E2 5=E1
* 3=B2 4=C2
*
.SUBCKT DMMT5551S 1 2 3 4 5 6
Q1 6 1 5 Mod1
Q2 4 3 2 Mod1
*
.MODEL Mod1 NPN IS=6.5E-15 NF=1 BF=110 VAF=288 ISE=1.0E-14
+ NE=1.5 NR=1 BR=4.5 VAR=70 ISC=3E-12 NC=1.35 RC=0.5 RB =0.26 RE =0.23
+ CJC=6.1E-12 MJC=0.31 VJC=0.4 CJE=57E-12 MJE=0.35 VJE=0.8 TF=0.2E-9
+ TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=170 VO=35 GAMMA=2.2E-7
.ENDS
*
*$
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=18/11/2015
*VERSION=1
.SUBCKT ZXTR2105 1 2 3
Q1 1 4 3 ZXTRNPN
R1 1 4 13.1K TC1=-0.35m
R2 3 2 10Meg
D1 2 4 ZXTRdiode
.ENDS
.SIMULATOR DEFAULT
*
*Zetex ZXGD3001E6 Spice Model v2.0 Last Revised 17/09/08
*
.SUBCKT ZXGD3001E6 1 2 3 4 5 6
*pins Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3001N
Q2 3 5 4 ZXGD3001P
*
.MODEL ZXGD3001N NPN IS=9E-13 BF=990 NF=1 VAF=25 IKF=3.8 ISE=8E-14 NE=1.35
+ BR=410 NR=1 VAR=8 IKR=1.25 ISC=8e-14 NC=1.35 RE=0.0117 RB=0.1 RC=0.0081
+ CJE=168E-12 VJE=0.7 MJE=0.38 CJC=61E-12 VJC=0.52 MJC=0.31 TF=0.5E-9 TR=1.7e-9
+ XTB=1.4
*
.MODEL ZXGD3001P PNP IS=5.5E-13 NF=1 BF=650 VAF=20 ISE=1.9E-13
+ IKF=2.5 NE=1.53 BR=72 VAR=4.1 ISC=7E-14 NC=1.2 IKR=0.25 RC=0.010
+ RB=0.15 RE=0.006 QUASIMOD=1 RCO=0.7 GAMMA=1.7E-9 CJC=57E-12 MJC=0.35
+ VJC=0.53 CJE=168E-12 MJE=0.54 VJE=0.95 TF=0.42E-9 TR=8.4E-9 TRC1=0.005
+ TRB1=0.005 TRE1=0.005 XTB=1.4
*
.ENDS ZXGD3001E6
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*TITLE=ZXGD3006 MACROMODEL
*DATE=26Jan2012
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*VERSION=1
.SIMULATOR DEFAULT
*TITLE=ZXGD3006 MACROMODEL
*DATE=04Feb2015
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*VERSION=1
.SIMULATOR DEFAULT
*
*Zetex ZXGD3002E6 Spice Model v2.0 Last Revised 17/09/08
*
.SUBCKT ZXGD3002E6 1 2 3 4 5 6
*pins Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3002N
Q2 3 5 4 ZXGD3002P
*
.MODEL ZXGD3002N NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4
+ BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085
+ CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6e-9
*
*Zetex ZXGD3003E6 Spice Model v2.0 Last Revised 17/09/08
*
.SUBCKT ZXGD3003E6 1 2 3 4 5 6
*pins Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3003N
Q2 3 5 4 ZXGD3003P
*
.MODEL ZXGD3003N NPN IS=2.5E-13 NF=1 BF=600 IKF=1 VAF=51 ISE=2E-13
+NE=1.4 NR=1 BR=150 IKR=.5 VAR=25 ISC=1e-13 NC=1.47 RB=0.5
+RE=0.055 RC=0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF=0.8E-9
+TR=30e-9
*
.MODEL ZXGD3003P PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25
+ ISE=1e-13 NE=1.38 BR=55 NR=1 VAR=9.9 IKR=0.25 ISC=1e-13 NC=1.18
+ RE=0.06 RB=0.7 RC=0.06 CJE=95.9e-12 VJE=0.897 MJE=0.468 CJC=43.4e-12
+ VJC=1.816 MJC=0.85 TF=495e-12 TR=25e-9
*
.ENDS ZXGD3003E6
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*
*Zetex ZXGD3004E6 Spice Model v2.0 Last Revised 17/09/08
*
.SUBCKT ZXGD3004E6 1 2 3 4 5 6
*pins Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3004N
Q2 3 5 4 ZXGD3004P
*
.MODEL ZXGD3004N NPN IS=5.1E-13 BF=480 NF=1 VAF=99 IKF=3.3 ISE=1.2E-13
+NE=1.49 BR=65 NR=1 VAR=24 IKR=1 ISC=1.1E-13 NC=1.31 RE=0.0115 RB=0.15 RC=0.012
+CJE=192E-12 VJE=0.75 MJE=0.38 CJC=35E-12 VJC=0.47 MJC=0.34 TF=0.62E-9 TR=20E-9
+RCO=1.9 GAMMA=1E-8 QUASIMOD=1 XTB=1.35 TRE1=0.005 TRB1=0.005 TRC1=0.005
*
.MODEL ZXGD3004P PNP IS=4E-13 NF=1 BF=470 IKF=3.5 VAF=23 ISE=10E-14
+ NE=1.49 NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.014 RB=0.12
+ RC=0.0111 RCO=0.88 GAMMA=0.6E-9 CJC=58E-12 MJC=0.41 VJC=0.62 CJE=183E-12
+ MJE=0.5 VJE=0.95 TF=3.9E-10 TR=7.8e-9 XTB=1.5 TRE1=0.003 TRB1=0.003
+ TRC1=0.003 QUASIMOD=1
*
.ENDS ZXGD3004E6
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*TITLE=ZXGD3005 MACROMODEL
*DATE=26Jan2012
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=DIODES, SIMETRIX and PSPICE
*VERSION=1
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Jul2016
*VERSION=1
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=29Jul2016
*VERSION=1
*
*Zetex FCX705 Spice Model v1.0 Last Revised 12/08/08
*
.SUBCKT FCX705 1 2 3
* C B E
Q1 1 2 4 SUB705
Q2 1 4 3 SUB705 4
*
.MODEL SUB705 PNP IS=3.35584E-14 BF=85 VAF=212 NF=1.002 IKF=0.817
+ ISE=3.6E-13 NE=4.1 BR=24 VAR=6 NR=0.999 IKR=0.114 ISC=1.406E-13 NC=1.13
+ RB=1.1 RE=0.4 RC=0.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=0.595
.ENDS FCX705
*
*$
*
* (c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, USA
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JAN2011
*VERSION=1
*PINS C B E
*
.SUBCKT FZT600B 1 2 3
Q1 1 2 4 SUB601B
Q2 1 4 3 SUB601B 2.74
*
.MODEL SUB601B NPN IS=8.354E-14 BF=130 VAF=18.3 IKF=0.2 ISE=2E-13
+NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25
+RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679 MJC=0.3607
+TF=1E-9 TR=1800E-9
.ENDS
*
*$
*SYM=DARBJTN
.SUBCKT DI_MMBTA13 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1 emtr col DSUB
D2 eb base DSUB
.MODEL QPWR NPN (IS=360f NF=1.00 BF=134 VAF=98.6
+ IKF=0.240 ISE=21.9p NE=2.00 BR=4.00 NR=1.00
+ VAR=40.0 IKR=0.360 RE=4.00 RB=16.0 RC=1.60
+ XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
+ VJC=1.10 MJC=0.240 TF=3.77n TR=617n )
.MODEL DSUB D( IS=360f N=1 RS=4.00 BV=30.0
+ IBV=.001 CJO=13.9p TT=617n )
.ENDS
*SYM=DARBJTN
.SUBCKT DI_MMBTA28 col base emtr
Q1 col base eb QPWR .1
Q2 col eb emtr QPWR
D1 emtr col DSUB
D2 eb base DSUB
.MODEL QPWR NPN (IS=600f NF=1.00 BF=134 VAF=161
+ IKF=0.400 ISE=36.5p NE=2.00 BR=4.00 NR=1.00
+ VAR=48.0 IKR=0.600 RE=0.500 RB=2.00 RC=0.200
+ XTB=1.5 CJE=189p VJE=0.740 MJE=0.450 CJC=13.9p
+ VJC=1.10 MJC=0.240 TF=6.15n TR=1.01u )
.MODEL DSUB D( IS=600f N=1 RS=0.500 BV=80.0
+ IBV=.001 CJO=13.9p TT=1.01u )
.ENDS
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=21JAN2011
*VERSION=1
*PINS C B E
*
.SUBCKT FZT7053 1 2 3
Q1 1 2 4 SUB614
Q2 1 4 3 SUB614 5.39
*
.MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284
+ ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2
+ VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375
+ RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127
+ CJE=23.7E-12 TF =1.73E-9 TR =260E-9
.ENDS
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_IM
*SIMULATOR=PSPICE
*DATE=17Dec2013
*VERSION=1
*
.SUBCKT ZXTN04120HK 1 2 3
* C B E
Q1 1 2 4 SUB04120
Q2 1 4 3 SUB04120 3.46
*
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=N/C
*4=A
*5=K
*6=K
*7=C1
*8=C1
*
.SUBCKT ZXTNS618MC 1 2 3 4 5 6 7 8
Q1 11 1 2 Nmod
D1 4 12 S9086
RP1 11 7 0.001
RP2 11 8 0.001
RP3 12 5 0.001
RP4 12 6 0.001
RP5 3 4 1E15
*
.MODEL Nmod NPN IS=5.611E-13 NF=1.0022 BF=480 IKF=4.6 VAF=51
+ ISE=1.73E-13 NE=1.4 NR=1.0002 BR=200 IKR=3 VAR=25
+ ISC=7.3152E-13 NC=1.47 RB=0.032 RE=0.027 RC=0.025
+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12
+ TF=0.95E-9 TR=2.25E-9
.MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p
+ M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=N/C
*4=A
*5=K
*6=K
*7=C1
*8=C1
*
.SUBCKT ZXTPS717MC 1 2 3 4 5 6 7 8
Q1 11 1 2 Pmod
D1 4 12 S9086
RP1 11 7 0.001
RP2 11 8 0.001
RP3 12 5 0.001
RP4 12 6 0.001
RP5 3 4 1E15
*
.MODEL Pmod PNP IS=5.5E-13 BF=500 IKF=3 VAF=14.93
+ ISE=1.75E-13 NE=1.5 NR=1.00 BR=280 IKR=0.3 VAR=5.64
+ ISC=6.01E-13 NC=1.34 RB=0.3 RE=0.03 RC=0.025 CJC=116.9E-12
+ MJC=0.3456 VJC=0.4576 CJE=223.6E-12 MJE=0.4803 VJE=0.9091
+ TF=1.2E-9 TR=2E-9
.MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p
+ M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=N/C
*4=A
*5=K
*6=K
*7=C1
*8=C1
*
.SUBCKT ZXTPS718MC 1 2 3 4 5 6 7 8
Q1 11 1 2 Pmod
D1 4 12 S9086
RP1 11 7 0.001
RP2 11 8 0.001
RP3 12 5 0.001
RP4 12 6 0.001
RP5 3 4 1E15
*
.MODEL Pmod PNP IS=6.8E-13 BF=480 IKF=2 VAF=23
+ ISE=0.8E-13 NE=1.5567 NR=1.00 BR=70 IKR=0.4
+ VAR=7 ISC=7.5E-14 NC=1.19 RB=0.085 RE=0.04
+ RC=0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714
+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF=0.71E-9
+ TR=23.7E-9
.MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p
+ M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=27JAN2011
*VERSION=1
*PIN_ORDER
*1=B1
*2=E1
*3=N/C
*4=A
*5=K
*6=K
*7=C1
*8=C1
*
.SUBCKT ZXTPS720MC 1 2 3 4 5 6 7 8
Q1 11 1 2 Pmod
D1 4 12 S9086
RP1 11 7 0.001
RP2 11 8 0.001
RP3 12 5 0.001
RP4 12 6 0.001
RP5 3 4 1E15
*
.MODEL Pmod PNP IS=6.261E-13 BF=500 IKF=1.4 VAF=28.4
+ ISE=1.057E-13 NE=1.4923 NR=1.00 BR=42 IKR=0.65 VAR=10.21
+ ISC=6E-14 NC=1.124 RB=0.078 RE=0.077 RC=0.04 CJC=59.54E-12
+ MJC=0.5058 VJC=0.8427 CJE=201.4E-12 MJE=0.5244 VJE=1.021
+ TF=0.68E-9 TR=23.7E-9 NK=0.75 XTB=1.8 TRE1=.0025 TRB1=.0025
+ TRC1=.0025
.MODEL S9086 D IS=1E-6 EG=0.62 RS=0.13 BV=40 IBV=100u CJO=175p
+ M=0.333 N=0.823 TT=7.20n XTI=2 TRS1=4e-3 ISR=12e-6 NR=1.25
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=03/08/2010
*VERSION=2
*------connections-------P1=D, P2=G, P3=N/C, P4=C, P5=E, P6=R1, P7=B, P8=S
*
.SUBCKT DLD101 P1 P2 P4 P5 P6 P7 P8
*
*MOSFET model
M1 6 2 5 5 Nmod L=1E-6 W=0.2
M2 5 2 5 6 Pmod L=1.5E-6 W=0.15
RG P2 2 7
RIN 2 5 1E9
RD P1 6 Rdmod 0.58
RB P1 7 Rdmod 0.015
RL 6 5 10E9
C1 2 5 10E-12
C2 P1 P2 3E-12
D1 5 7 Dbodymod
LS 5 P8 2.0E-9
*
*Bipolar model
Q1 P4 P7 P5 NPNmod
R1 P6 P7 4.7E3
R2 P5 P7 47E3
*
.MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=3.7 KP=8.6E-6 RS=.046 NFS=2E12
+ KAPPA=0.06 UO=650 IS=6E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=15E-8 NSUB=6E15 TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=1E-12 N=1.05 RS=0.045 TRS1=1.5e-3 CJO=39e-12 BV=101)
.MODEL Rdmod RES (TC1=7e-3 TC2=1.7E-5)
.MODEL NPNmod NPN (IS=6E-14 NF=1.02 BF=320 IKF=0.3 VAF=80 ISE=5E-14 NE=1.4 NR=1
BR=10
+ IKR=0.06 VAR=10 ISC=2E-13 NC=1.3 RC=0.194 RB=0.5 RE=0.245 CJC=6.05E-12 MJC=0.175
VJC=0.4
+ CJE=13E-12 MJE=0.36 VJE=0.7 TF=0.4E-9 TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=25
GAMMA=5E-8)
.ENDS DLD101
*
*$
*
*DIODES_INC_SPICE_MODEL_AL5801
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=11/06/2012
*VERSION=2
.MODEL SWT NPN(IS=20E-14 NF=.99 BF=320 IKF=0.3 VAF=80 ISE=5E-14 NE=1.4 NR=1 BR=10
+ IKR=0.06 VAR=10 ISC=2E-13 NC=1.3 RC=0.194 RB=0.5 RE=0.245 CJC=6.05E-12 MJC=0.175
VJC=0.4
+ CJE=13E-12 MJE=0.36 VJE=0.7 TF=0.4E-9 TR=1.5E-6 XTB=1.4 QUASIMOD=1 RCO=25
GAMMA=5E-8)
.ENDS
.SIMULATOR DEFAULT
Note: The following SPICE model is for the individual elements of this device.
When applying this SPICE model to your circuit simulation be certain to
add R1 and R2 values per the table found on the data sheet for the pre-biased
transistor elements.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
-----------------------------------------------------------------------------------
-----------------------------------------------------------------------------
*SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs
.MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )
***********************************************************************************
********************************************
*SRC=LMN200B01;DI_LMN200B01_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc.
BJTs
.MODEL DI_LMN200B01P_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
+ MJC=0.300 TF=533p TR=84.1n EG=1.12 )
***********************************************************************************
********************************************
*SRC=LMN200B02;DI_LMN200B02_BJT;BJTs NPN; Si; 40.0V 0.600A 275MHz Diodes Inc.
BJTs
.MODEL DI_LMN200B02_BJT NPN (IS=1.27p NF=1.00 BF=410 VAF=114
+ IKF=60.7m ISE=47.7p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.150 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=14.2p VJC=0.300
+ MJC=0.300 TF=533p TR=84.1n EG=1.12 )
-----------------------------------------------------------------------------------
-----------------------------------------------------------------------------
*SRC=CTA2P1N;DI_CTA2P1N_BJT;BJTs PNP; Si; 40.0V 0.600A 200MHz Diodes Inc. BJTs
.MODEL DI_CTA2P1N_BJT PNP (IS=60.4f NF=1.00 BF=410 VAF=114
+ IKF=0.304 ISE=23.2p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.750 RE=0.261 RB=1.04 RC=0.104
+ XTB=1.5 CJE=27.7p VJE=1.10 MJE=0.500 CJC=18.5p VJC=0.300
+ MJC=0.300 TF=667p TR=84.1n EG=1.12 )
*****************************************************************************
** This model is designed as an aid not an accurate physical model
** DIODES make no warranties with this model
** The model is provided solely on an "as is" basis.
** The entire risk as to its quality and performance is with the customer.
*****************************************************************************
*
* This model is subject to change without notice.
* Diodes is not responsible that this model is actual or to give notice about
changes
*****************************************************************************
*
* Updates:
*
* Version 1.0
*
*****************************************************************************
*Provides ESD Protection per IEC 61000-4-2 Standard: Contact 10kV
*1 Channel of ESD Protection
*Low Channel Input Capacitance
*Typically Used in Cellular Handsets, Portable Electronics,
*Communication Systems, Computers and Peripherals
*****************************************************************************
.SUBCKT DESD5V0U1BA 1 2
* Pin 1 = Electrode 1
* Pin 2 = Electrode 2
* Terminals A K
D1 1 3 ZDiode
D2 2 3 ZDiode
.ENDS DESD5V0U1BA
*
.MODEL ZDiode d
+IS=1e-13 RS=0.151 N=0.957115 EG=1.3
+XTI=4 BV=6.47 IBV=0.00025 CJO=5.52e-12
+VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09
+KF=0 AF=1
*****************************************************************************
** This model is designed as an aid not an accurate physical model
** DIODES make no warranties with this model
** The model is provided solely on an "as is" basis.
** The entire risk as to its quality and performance is with the customer.
*****************************************************************************
*
* This model is subject to change without notice.
* Diodes is not responsible that this model is actual or to give notice about
changes
*****************************************************************************
*
* Updates:
*
* Version 1.0
*
*****************************************************************************
*Provides ESD Protection per IEC 61000-4-2 Standard: Air 30kV, Contact
30kV
*1 Channel of ESD Protection
*Low Channel Input Capacitance
*Typically Used in Cellular Handsets, Portable Electronics,
*Communication Systems, Computers and Peripherals
*****************************************************************************
.SUBCKT D5V0L1B2WS 1 2
* Pin 1 = Electrode 1
* Pin 2 = Electrode 2
* Terminals A K
D1 1 3 ZDiode
D2 2 3 ZDiode
.ENDS D5V0L1B2WS
*
.MODEL ZDiode d
+IS=1e-13 RS=0.25 N=0.957115 EG=1.3
+XTI=4 BV=6.48 IBV=0.00025 CJO=32e-12
+VJ=0.980233 M=0.39895 FC=0.5 TT=1e-09
+KF=0 AF=1
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=09/10/2009
*VERSION=1
*PIN_ORDER C A
*
.SUBCKT 30SMCJ22A 1 2
D1 2 11 Dmod1
L1 1 11 5E-9
.MODEL Dmod1 D (IS=1E-12 N=1.1 RS=0.01 TRS1=5E-4 CJO=5950E-12 VJ=0.51
+ M=0.34 BV=25.3 IBV=100E-6 TBV1=8E-4)
.ENDS 30SMCJ22A
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=1/04/2014
*VERSION=1
.model 30SMCJ28A D(IS=.1u RS=0.1 CJO=1800p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=1m
BV=30 NBV=20 IBV=10u TT=40n EG=.84 TRS1=.1m)
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=1/30/2015
*VERSION=1
.model 3_0SMCJ30A D(IS=.1u RS=0.15 CJO=17000p M=1 VJ=0.4 ISR=.008u N=1.05 IKF=1m
BV=32 NBV=10 IBV=10u TT=4n EG=.84 TRS1=.1m)
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=24/02/2013
*VERSION=1
.model DFLT15A D(IS=4f RS=0.194 CJO=4000p M=0.6 VJ=0.5 ISR=.008u N=1.05 IKF=1m
BV=16.9 IBV=100u TT=40n EG=.84 TRS1=.1m)
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=8/01/2014
*VERSION=1
.model SMAJ48A D(IS=.1u RS=0.078 CJO=1000p M=0.5 VJ=0.4 ISR=.008u N=1.05 IKF=1m
BV=53 NBV=20 IBV=10u TT=40n EG=.84 TRS1=.1m)
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL
*SIMULATOR=SIMETRIX
*ORIGIN=DZSL_DPG_SU
*DATE=23AUG2013
*VERSION=1
.SUBCKT SMBJ18A 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 20
.MODEL DF D ( IS=10f RS=.5 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5f RS=.2 N=1.1 )
.ENDS
.SIMULATOR DEFAULT
* (c) 2013 Diodes Inc
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Zetex Semiconductors Ltd, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=30/01/2015
*VERSION=1
.model SMBJ33A D(IS=.1u RS=0.3 CJO=80000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m
BV=34.3 NBV=20 IBV=10u TT=4n EG=.84 TRS1=.1m)
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10NOV2010
*VERSION=1
*
.SUBCKT SMCJ24A 7 1
*------connections-------Anode Cathode
*
L1 7 2 1.5E-9
*Forward
D1 2 1 Dmod1
.MODEL Dmod1 D IS=1.5E-12 N=1.18 XTI=5 RS=0.04 CJO=620E-12 VJ=0.75 M=0.42 TT=4E-7
C1 1 2 50E-12
*Leakage
RL 1 2 8E6
*Reverse
RZ1 2 3 2
D2 4 3 Dmod2
.MODEL Dmod2 D IS=1E-15 N=0.5
RZ2 2 5 0.33
D3 6 5 Dmod2
EV1 1 4 16 18 1
EV2 1 6 16 18 1.07
IBV 0 16 0.001
RBV 16 0 Rmod2 47750
.MODEL Rmod2 RES TC1=8.3E-4
D4 18 0 Dmod2
IT 0 18 0.001
.ENDS SMCJ24A
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_GM
*SIMULATOR=PSPICE
*DATE=10NOV2010
*VERSION=1
*
.SUBCKT SMCJ24A 7 1
*------connections-------Anode Cathode
*
L1 7 2 2E-9
*Forward
D1 2 1 Dmod1
.MODEL Dmod1 D IS=4E-12 N=1.18 XTI=6 RS=0.012 CJO=2700E-12 VJ=0.6 M=0.45 TT=5.2E-7
C1 1 2 300E-12
*Leakage
RL 1 2 5E6
*Reverse
RZ1 2 3 0.14
D2 4 3 Dmod2
.MODEL Dmod2 D IS=1E-15 N=0.5
RZ2 2 5 0.055
D3 6 5 Dmod2
EV1 1 4 16 18 1
EV2 1 6 16 18 1.05
IBV 0 16 0.001
RBV 16 0 Rmod2 27700
.MODEL Rmod2 RES TC1=8.3E-4
D4 18 0 Dmod2
IT 0 18 0.001
.ENDS SMCJ24A
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=30/01/2015
*VERSION=1
.model SMCJ33A D(IS=.1u RS=0.2 CJO=80000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m
BV=34.3 NBV=20 IBV=10u TT=4n EG=.84 TRS1=.1m)
.SIMULATOR DEFAULT
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=PSPICE
*DATE=28/1/2016
*VERSION=1
.model SMBJ60CA D(IS=.1u RS=0.005 CJO=8000p M=1.3 VJ=0.4 ISR=.008u N=1.05 IKF=1m
BV=6 NBV=10 IBV=200u TT=4n EG=.84 TRS1=.1m)
.SIMULATOR DEFAULT
*SRC=BZT52C4V7;DI_BZT52C4V7;Diodes;Zener <=10V; 4.70V 0.500W Diodes Inc.
-
*SYM=HZEN
.SUBCKT DI_BZT52C4V7 1 2
* Terminals A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.27
.MODEL DF D ( IS=43.8p RS=35.2 N=1.10
+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.77f RS=64.5 N=3.00).ENDS
*SBR02M30LP Spice Model v1.0 Last Revised 1/20/2017 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_SBR02M30LP D ( IS=87.49n RS=387.2m BV=35.00 IBV=1.000m
+ CJO=59.00p M=110.0k N=1.045 TT=20.00n EG=480.0m VJ=1.100 )
*DFLU1200 Spice Model v1.0 01/12/2017 Diodes Inc SuperFast Recovery Rectifier
.MODEL DI_DFLU1200 D (
+LEVEL = 1 IS = 11n RS = 44.7m
+N = 1.10 BV = 200 IBV = 5e-06
+CJO = 45p VJ = 0.468489 MJ = 0.395956
+FC = 0.5 XTI = 3.14412 EG = 1.11
+TT = 33e-9 IKF = 6.06945e-06 TRS1 = -0.00446639
+TRS2 = 9.32759e-06 )
.SUBCKT DMN6070SY_N 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.04411
RS 30 3 0.001
RG 20 2 1.31
CGS 2 3 7.136E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.4E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.463
+ TOX = 6E-008 NSUB = 1E+016 KP = 15.76 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 1.389E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.333E-010 N = 1.31 RS = 0.01036 BV = 60 CJO = 8.659E-011 VJ =
0.706 M = 0.6
.MODEL DLIM D IS = 0.0001
.ENDS
*NMOS
.SUBCKT DMHC4035LSDQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006
RD 10 1 0.02213
RS 30 3 0.001
RG 20 2 1.56
CGS 2 3 5.488E-010
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 6E-010
R1 13 0 1
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL = 3 VMAX = 5.378E+005 ETA = 0.001 VTO = 2.146
+ TOX = 6E-008 NSUB = 1E+016 KP = 30.04 U0 = 400 KAPPA = 10
.MODEL DCGD D CJO = 2.594E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.405E-010 N = 1.261 RS = 0.01477 BV = 43 CJO = 2.653E-010 VJ =
0.8 M = 0.6 TT=3E-09
.MODEL DLIM D IS = 0.0001
.ENDS
*PMOS
.SUBCKT DMHC4035LSDQ 10 20 30
* TERMINALS: D G S
M1 1 2 3 3 PMOS L = 1E-006 W = 1E-006
RD 10 1 0.04326
RS 30 3 0.001
RG 20 2 13.07
CGS 2 3 5.846E-010
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 4.5E-010
R1 13 30 1
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1
D2 30 15 DLIM
DSD 10 3 DSUB
.MODEL PMOS PMOS LEVEL = 3 U0 = 400 VMAX = 1E+006 ETA = 0.001
+ TOX = 6E-008 NSUB = 1E+016 KP = 8.014 KAPPA = 19.32 VTO = -1.583
.MODEL DCGD D CJO = 1.5E-010 VJ = 0.8 M = 0.6
.MODEL DSUB D IS = 2.222E-010 N = 1.255 RS = 0.0255 BV = 43 CJO = 3E-010 VJ = 0.8 M
= 0.6 TT = 7E-009
.MODEL DLIM D IS = 0.0001
.ENDS
*TITLE=BCR402UW6Q*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 44 TC=3.5m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode
.ENDS
*TITLE=BCR405UW6Q
*DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.SUBCKT BCR405UW6 1 6 2 5 3 4
Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 16.5 TC=4m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode
.ENDS
*TITLE=BCR401UW6Q*
DATE=12/05/2016
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*VERSION=1
.SUBCKT BCR401UW6 1 6 2 5 3 4
Q1 5 8 6 BCRPNP
R1 8 1 22K TC=2m,8u
R2 6 4 91 TC=3.5m,6u
Rshort23 2 3 1m
Rshort35 3 5 1m
D1 4 9 BCRdiode
D2 9 8 BCRdiode
.ENDS
*DFLS260 Spice Model v1.0 Last Revised 3/21/2017 Diodes Inc SUPER BARRIER
RECTIFIER
SIMULATOR=SPICE3
.MODEL DI_DFLS260 D ( IS=721.4n RS=80.00m BV=60.00 IBV=10.00
+ CJO=320.8p M=450.7m N=1.029 TT=10.00n EG=480.0m VJ=292.4m )
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=31/03/2017
*VERSION=1
.SUBCKT BCR421UFD 1 2 3 4 5 6
Q1 2 8 5 BCRNPN
R1 4 8 1.5K TC1=0.2m
R2 5 6 95 TC1=2m
D1 8 9 BCRdiode
D2 9 6 BCRdiode
.MODEL BCRNPN NPN IS=300e-11 NF=1.2 ISE=30e-15 NE=1.2 BF=350
+ VAF=10 IKF=300m ISC=2e-13 NC=1.2 BR=15 NR=1 RE=0.01
+ RB=0.33 RC=0.01 CJE=60e-12 VJE=0.55 MJE=0.36 CJC=15e-12 VJC=0.5
+ MJC=0.35 TF=1e-9 TR=4e-9 QUASIMOD=1 RCO=1 GAMMA=1.3e-9 NK=.6
+ XTB=1.4 TRE1=0.004 TRB1=0.003 TRC1=0.004
.SIMULATOR DEFAULT
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG_SU
*SIMULATOR=SIMETRIX
*DATE=31/03/2017
*VERSION=1
.SUBCKT BCR420UFD 1 2 3 4 5 6
Q1 2 8 5 BCRNPN
R1 4 8 20K TC1=0.2m
R2 5 6 95 TC1=2m
D1 8 9 BCRdiode
D2 9 6 BCRdiode
.ENDS
.SIMULATOR DEFAULT