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    Chapter-9 금속반도체결함 및 이종결합

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    Shweta Kumari
    This document discusses metal-semiconductor junctions and heterojunctions. Chapter 9 covers the Schottky barrier diode, metal-semiconductor ohmic contacts, and heterojunctions. The Schottky barrier diode forms when a metal contacts a semiconductor and a barrier is created. Ohmic contacts are nonrectifying and allow current to flow easily in both directions. A heterojunction is formed between two semiconductors with different bandgaps but similar crystal structures and can create a two-dimensional electron gas at the interface.

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    Chapter-9 금속반도체결함 및 이종결합

    Uploaded by

    Shweta Kumari
    74 views9 pages
    This document discusses metal-semiconductor junctions and heterojunctions. Chapter 9 covers the Schottky barrier diode, metal-semiconductor ohmic contacts, and heterojunctions. The Schottky barrier diode forms when a metal contacts a semiconductor and a barrier is created. Ohmic contacts are nonrectifying and allow current to flow easily in both directions. A heterojunction is formed between two semiconductors with different bandgaps but similar crystal structures and can create a two-dimensional electron gas at the interface.

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    This document discusses metal-semiconductor junctions and heterojunctions. Chapter 9 covers the Schottky barrier diode, metal-semiconductor ohmic contacts, and heterojunctions. The Schottky barrier diode forms when a metal contacts a semiconductor and a barrier is created. Ohmic contacts are nonrectifying and allow current to flow easily in both directions. A heterojunction is formed between two semiconductors with different bandgaps but similar crystal structures and can create a two-dimensional electron gas at the interface.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    74 views9 pages

    Chapter-9 금속반도체결함 및 이종결합

    Uploaded by

    Shweta Kumari
    This document discusses metal-semiconductor junctions and heterojunctions. Chapter 9 covers the Schottky barrier diode, metal-semiconductor ohmic contacts, and heterojunctions. The Schottky barrier diode forms when a metal contacts a semiconductor and a barrier is created. Ohmic contacts are nonrectifying and allow current to flow easily in both directions. A heterojunction is formed between two semiconductors with different bandgaps but similar crystal structures and can create a two-dimensional electron gas at the interface.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 9

    Chapter 9

    Metal-Semiconductor and
    Semiconductor Heterojunctions

    9.1 The Schottky Barrier Diode


    9.2 Metal-Semiconductor Ohmic Contacts
    9.3 Heterojunctions

    반도체공학 2017년2학기 이문석 1


    9.1 The Schottky Barrier Diode

    Qualitative Characteristics
    фm : metal work function
    фs : semiconductor work function
    χ : electron affinity

    Before contact At equilibrium after contact


    : Schottky Barrier : for electron in metal side to
    flow into semiconductor for фm > фs

    : Built-in potential Barrier : for electron in semiconductor side to flow into metal

    Reverse-biased M-S Junction Forward-biased M-S Junction

    반도체공학 2017년2학기 이문석 2


    9.1 The Schottky Barrier Diode

    ← E ( x =xn ) =0

    -
    n ← φ ( x = xn ) = 0

    eN d xn2
    V= φ (= =
    x 0) ⋅
    bi
    εs 2 : same as the one-sided
    p+n junction
    (reversed-biased case)

    Example 9.1 A contact between Tungsten and n-type silicon doped to Nd = 1016cm-3 at T = 300K.

    반도체공학 2017년2학기 이문석 3


    9.1 The Schottky Barrier Diode

    Image-force-induced barrier lowering (Schottky Effect)

    : Image force

    No electric field :

    −eφ ( x) =

    Constant electric field :

    dφ e
    For max. barrier : =− +E=0
    dx 16πε s x 2

    e eE
    ∆φ =−φ ( x =xm ) =− − Exm =
    16πε s xm 4πε s

    반도체공학 2017년2학기 이문석 4


    9.1 The Schottky Barrier Diode

    Ideal Current Equation

    Δф increases with an
    increase in the applied
    reverse-bias voltage
     more reverse
    saturation current.

    반도체공학 2017년2학기 이문석 5


    9.1 The Schottky Barrier Diode

    Comparison of the Schottky Diode and the pn Junction Diode

    Two important differences : ① the magnitude of reverse saturation current


    ② the switching characteristics

    : Diffusion of minority carriers


    : Thermionic emission of majority carriers over a potential barrier

    “ JsT is 2 or 3 orders of magnitude larger than Js “


    Comparison of forward bias characteristics

    The Schottky diode is a majority carrier device.


     No diffusion capacitance when forward-biased

    No stored minority carrier when forward-biased


     no storage time (fast switching is possible)

    반도체공학 2017년2학기 이문석 6


    9.2 Metal-Semiconductor Ohmic Contacts

    Ohmic Contacts : Nonrectifying metal-to-semiconductor contact


    Ideal Nonrectifying Barrier

    N-type

    Forward biased
    Before contact At equilibrium after contact for фm < фs

    P-type

    Reverse biased
    At equilibrium after contact for фm > фs
    Tunneling Barrier

    Contact
    Resistance :

    반도체공학 2017년2학기 이문석 7


    9.3 Heterojunctions

    Heterojunction
    Two semiconductor materials with different bandgap but nearly matched lattice constants.

    nP
    Hetero
    junction

    nN
    Hetero
    junction 2-D Electron Gas

    반도체공학 2017년2학기 이문석 8


    Chapter 9 Homework

    Review Questions and


    Problems :
    9.1
    9.2
    9.6

    9장 수업 끝나고 일주일 후 수업시간 시작 전 제출

    반도체공학 2017년2학기 이문석 9

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