IPBE65R115CFD7A

MOSFET
650VCoolMOSªCFD7ASJPowerDevice D²-PAK7pin

650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleading
automotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothe tab

well-knownattributesofhighqualityandreliabilityrequiredbythe
automotiveindustry,thenewCoolMOS™CFD7Aseriesprovidesforan
integratedfastbodydiodeandcanbeusedforPFCandresonant
switchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC.
1
2
3
45
6
Features 7

•Latest650Vautomotivequalifiedtechnologywithintegratedfastbody
diodeonthemarketfeaturingultralowQrr
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•100%avalanchetested Drain
•Kelvinsourcecontactavailable tab

•Best-in-classRDS(on)inSMDandTHDpackages
Gate *1
Pin 1

Benefits
*2

Driver

•Optimizedforhigherbatteryvoltagesupto475Vthankstofurther Power
Source
Source
Pin 2
improvedrobustness
*1: Internal body diode
*2: Integrated ESD diode Pin 3-7

•Lowerswitchinglossesenablinghigherswitchingfrequencies
•Highqualityandreliability
•Advancedcontrollabilityduetokelvinsource
•Increasedpackagecreepagedistance
•Increasedefficiencyinlightloadandfullloadconditions

Potentialapplications
SuitableforPFCandDC-DCstagesfor:
•UnidirectionalandbidirectionalDC-DCconverters,
•On-BoardbatteryChargers

Productvalidation
QualifiedaccordingtoAECQ101

Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.
Theirexchangemightleadtomalfunction.Forproductionpartapproval
process(PPAP)releaseweproposetoshareapplicationrelated
informationduringanearlydesignphasetoavoiddelaysinPPAPrelease.
PleasecontactInfineonsalesoffice.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS 650 V
RDS(on),max 115 mΩ
Qg,typ 41 nC
ID,pulse 82 A
Eoss @ 400V 5.6 µJ
Body diode diF/dt 1300 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPBE65R115CFD7A PG-TO263-7-11 65A115F7 see Appendix A

Final Data Sheet 1 Rev.2.1,2020-04-02

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IPBE65R115CFD7A

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.1,2020-04-02

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IPBE65R115CFD7A

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 21 TC=25°C
Continuous drain current1) ID A
- - 13 TC=100°C
Pulsed drain current2) ID,pulse - - 82 A TC=25°C
Avalanche energy, single pulse EAS - - 97 mJ ID=4.7A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 4.7 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGSk,pulse -30 - 30 V frepetition<=100kHz, tpulse <= 2ns
Power dissipation Ptot - - 114 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -40 - 150 °C -
Mounting torque - - - - Ncm -
Continuous diode forward current IS - - 21 A TC=25°C
Diode pulse current 2)
IS,pulse - - 82 A TC=25°C
VDS=0...400V,ISD<=9.7A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 70 V/ns
see table 8
VDS=0...400V,ISD<=9.7A,Tj=25°C
Maximum diode commutation speed diF/dt - - 1300 A/µs
see table 8

1)
Limited by Tj max.
2)
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch with identical RG
Final Data Sheet 3 Rev.2.1,2020-04-02
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IPBE65R115CFD7A

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.10 °C/W -
Soldering temperature, reflow soldering
Tsold - - 260 °C reflow MSL1
allowed

Final Data Sheet 4 Rev.2.1,2020-04-02

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IPBE65R115CFD7A

3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage1) V(BR)DSS 650 - - V VGS=0V,ID=1mA
Gate threshold voltage2) V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.49mA
- - 1 VDS=650V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 50 - VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current incl.
IGSS - - 1 µA VGS=20V,VDS=0V
protection diode
- 0.103 0.115 VGS=10V,ID=9.7A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.224 - VGS=10V,ID=9.7A,Tj=150°C
Gate resistance RG - 6.0 - Ω f=250kHz,opendrain

Table5Dynamiccharacteristics
External parasitic elements (PCB layout) influence switching behavior significantly.
Stray inductances and coupling capacitances must be minimized.
For layout recommendations please use provided application notes or contact Infineon sales office.
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 1950 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 29 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 70 - pF VGS=0V,VDS=0...400V
related3)
Effective output capacitance, time
Co(tr) - 741 - pF ID=constant,VGS=0V,VDS=0...400V
related4)
VDD=400V,VGS=13V,ID=9.7A,
Turn-on delay time td(on) - 17 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=9.7A,
Rise time tr - 3 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=9.7A,
Turn-off delay time td(off) - 61 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=9.7A,
Fall time tf - 4 - ns
RG=1.8Ω;seetable9

1)
For applications with applied blocking voltage > 475 V, we recommend to evaluate the impact of the cosmic radiation
effect in early design phase. For assessment, please contact local Infineon sales office.
2)
We do not recommend using the CoolMOS mentioned in this datasheet to operate in “linear mode”. For assessment of
potential “linear mode”, please contact Infineon sales office.
3)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
4)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.1,2020-04-02
 650VCoolMOSªCFD7ASJPowerDevice
IPBE65R115CFD7A

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 11 - nC VDD=400V,ID=9.7A,VGS=0to10V
Gate to drain charge Qgd - 13 - nC VDD=400V,ID=9.7A,VGS=0to10V
Gate charge total Qg - 41 - nC VDD=400V,ID=9.7A,VGS=0to10V
Gate plateau voltage Vplateau - 5.6 - V VDD=400V,ID=9.7A,VGS=0to10V

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 1.1 - V VGS=0V,IF=9.7A,Tj=25°C
VR=400V,IF=9.7A,diF/dt=100A/µs;
Reverse recovery time trr - 110 - ns
see table 8
VR=400V,IF=9.7A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 0.56 - µC
see table 8
VR=400V,IF=9.7A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 8.7 - A
see table 8

Final Data Sheet 6 Rev.2.1,2020-04-02

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IPBE65R115CFD7A

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
125 102
1 µs

100 101
10 µs

75 100
Ptot[W]

100 µs

ID[A]
50 10-1

1 ms

25 10-2

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101

1 µs

101
10 µs

100

100 0.5
ZthJC[°C/W]

100 µs
ID[A]

0.2
-1
10
0.1
1 ms 10-1
0.05
0.02
10-2 0.01
single pulse

10-3 10-2
100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.1,2020-04-02

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IPBE65R115CFD7A

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
125 80
20 V 20 V
10 V
10 V
100 8V 8V
60
7V

75
ID[A]

ID[A]
7V
40

50 6V

20
25 5.5 V
6V

5V
5.5 V
4.5 V 5V 4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.360 2.2

0.330 1.9

0.300 1.6
RDS(on)[normalized]
RDS(on)[Ω]

0.270 5.5 V 6V 6.5 V 7V 10 V 1.3

20 V

0.240 1.0

0.210 0.7

0.180 0.4
0 20 40 60 80 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=9.7A;VGS=10V

Final Data Sheet 8 Rev.2.1,2020-04-02

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IPBE65R115CFD7A

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
125 12

25 °C

10
100

8 120 V 400 V

75

VGS[V]
ID[A]

150 °C 6

50

25
2

0 0
0 2 4 6 8 10 12 0 10 20 30 40 50
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=9.7Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
2
10 100

80

101

60
EAS[mJ]
IF[A]

125 °C 25 °C
40
0
10

20

10-1 0
0.0 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=4.7A;VDD=50V

Final Data Sheet 9 Rev.2.1,2020-04-02

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IPBE65R115CFD7A

Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
750 105

104
720

Ciss
103

690
VBR(DSS)[V]

C[pF]
102

Coss
660

101

Crss
630
100

600 10-1
-50 -25 0 25 50 75 100 125 150 0 100 200 300 400 500
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
7

4
Eoss[µJ]

0
0 100 200 300 400 500
VDS[V]
Eoss=f(VDS)

Final Data Sheet 10 Rev.2.1,2020-04-02

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5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS

ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.1,2020-04-02

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6PackageOutlines

MILLIMETERS
DIMENSIONS
MIN. MAX.
A 4.30 4.50
A1 0.00 0.20
A2 2.30 2.50
b 0.50 0.70
b1 0.00 0.15
c 0.40 0.60
c1 1.17 1.37
D 9.05 9.45
D1 7.30 7.50 DOCUMENT NO.
E 9.80 10.20 Z8B00189665
E1 9.36 9.56 REVISION
E2 0.00 0.30 01
E3 8.40 8.60
e 1.27 SCALE 5:1
H 15.00 0 1 2 3 4 5mm
L 4.20 5.20
L1 0.70 1.30
L2 1.70 2.30 EUROPEAN PROJECTION
L3 2.70
P 0.35 0.55
Q 4.02 4.22
R 2.03 2.23
S 1.40 1.60 ISSUE DATE
THETA 0.00° 8.00° 20.09.2018

Figure1OutlinePG-TO263-7-11,dimensionsinmm

Final Data Sheet 12 Rev.2.1,2020-04-02

 650VCoolMOSªCFD7ASJPowerDevice
IPBE65R115CFD7A

7AppendixA

Table11RelatedLinks
• IFXCoolMOSCFD7AWebpage:www.infineon.com

• IFXCoolMOSCFD7Aapplicationnote:www.infineon.com

• IFXCoolMOSCFD7Asimulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 13 Rev.2.1,2020-04-02

 650VCoolMOSªCFD7ASJPowerDevice
IPBE65R115CFD7A

RevisionHistory
IPBE65R115CFD7A

Revision:2020-04-02,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
0.9 2018-10-29 Release of target version
0.91 2018-10-30 Final Target-DS
1.0 2018-11-15 Release of preliminary version
2.0 2019-07-11 Release of final version
2.1 2020-04-02 Updated marketing text, drain-source breakdown voltage footnote and disclaimer page.

Trademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

Disclaimer

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©2020InfineonTechnologiesAG
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Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 14 Rev.2.1,2020-04-02