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SEMICONDUCTOR TECHNICAL DATA by MRF421/D

The RF Line
 
   
Designed primarily for application as a high–power linear amplifier from 2.0 to
30 MHz.
• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 100 W (PEP)
Minimum Gain = 10 dB 100 W (PEP), 30 MHz
RF POWER
Efficiency = 40%
TRANSISTORS
• Intermodulation Distortion @ 100 W (PEP) — NPN SILICON
IMD = – 30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

CASE 211–11, STYLE 1

MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 45 Vdc
Emitter–Base Voltage VEBO 3.0 Vdc
Collector Current — Continuous IC 20 Adc
Withstand Current — 10 s — 30 Adc
Total Device Dissipation @ TC = 25°C PD 290 Watts
Derate above 25°C 1.66 W/°C
Storage Temperature Range Tstg – 65 to +150 °C

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.6 °C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 20 — — Vdc
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) V(BR)CES 45 — — Vdc
Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0) V(BR)CBO 45 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc
Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) ICES — — 10 mAdc
(continued)

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997 MRF421
1
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain hFE 10 70 — —
(IC = 5.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS
Output Capacitance Cob — 550 800 pF
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain GPE 10 12 — dB
(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
Collector Efficiency η 40 — — %
(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc,
ICQ = 150 mA, f = 30, 30.001 MHz)
Intermodulation Distortion (1) IMD — – 33 – 30 dB
(VCE = 12.5 Vdc, Pout = 100 W, IC = 10 Adc,
ICQ = 150 mA, f = 30, 30.001 MHz)
NOTE:
1. To proposed EIA method of measurement. Reference peak envelope power.

R1
+ +
L5
BIAS CR1 C5 C6 C7 C8 C9 C10 12.5 Vdc

– L2 –
L4

C4 RF
C2 L1 OUTPUT
RF
INPUT D.U.T.

C3 L3
C1 R2

C1, C2, C4 — 170 – 780 pF, ARCO 469 R2 — 10 Ω, 1.0 Watt Carbon
C3 — 80 – 480 pF, ARCO 466 CR1 — 1N4997
C5, C7, C10 — ERIE 0.1 µF, 100 V L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
C6 — MALLORY 500 µF @ 15 V Electrolytic L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D.
C9 — 100 µF, 15 V Electrolytic L3 — 1–3/4 Turns, 1/8″ Tubing, 3/8″ I.D., 3/8″ Long
C8 — 1000 pF, 350 V UNDERWOOD L4 — 10 µH Molded Choke
R1 — 10 Ω, 25 Watt Wirewound L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B

Figure 1. 30 MHz Test Circuit Schematic

MRF421 MOTOROLA RF DEVICE DATA

2
 160 160
VCC = 12.5 V
Pout , OUTPUT POWER (WATTS PEP)

Pout , OUTPUT POWER (WATTS PEP)

IMD = – 30 dB
ICQ = 150 mA ICQ = 150 mA
120 TWO TONE TEST: 120 f = 30, 30.001 MHz
f = 30, 30.001 MHz

80 80

40 40

0 0
0 4 8 12 16 8 10 12 14 16
Pin, INPUT POWER (WATTS PEP) VCC, SUPPLY VOLTAGE (VOLTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage

25 – 20

IMD, INTERMODULATION DISTORTION (dB)

VCC = 12.5 V
ICQ = 150 mA
20 – 25
f = 30, 30.001 MHz
G PE , POWER GAIN (dB)

15 – 30

10 – 35
3RD ORDER
VCC = 12.5 V
ICQ = 150 mA
5 Pout = 100 W PEP – 40
5TH ORDER

0 – 45
1.5 2 3 5 7 10 15 20 30 0 20 40 60 80 100 120 140
f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS PEP)

Figure 4. Power Gain versus Frequency Figure 5. Intermodulation Distortion

versus Output Power

40

20
IC, COLLECTOR CURRENT (AMP)

VCC = 12.5 V
8 30
ICQ = 150 mA
TC = 25°C Pout = 100 W PEP
4 15
FREQUENCY Zin
Zin MHz Ohms
2
7.5 2.0 5.35 – j2.2
7.5 2.8 – j1.9
0.8 15 1.39 – j1.1
30 0.7 – j0.5
0.4
1 2 5 10 20 50 100 f = 2 MHz
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 6. DC Safe Operating Area Figure 7. Series Equivalent Impedance

MOTOROLA RF DEVICE DATA MRF421

3
 20,000 2.5

Cout , PARALLEL EQUIVALENT OUTPUT

Rout , PARALLEL EQUIVALENT OUTPUT

VCC = 12.5 V VCC = 12.5 V
ICQ = 150 mA ICQ = 150 mA
16,000 2
Pout = 100 W (PEP) Pout = 100 W (PEP)

RESISTANCE (OHMS)
CAPACITANCE (pF)

12,000 1.5

8000 1

4000 0.5

0 0
1.5 2 3 5 7 10 15 20 30 1.5 2 3 5 7 10 15 20 30
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

Figure 8. Output Capacitance versus Frequency Figure 9. Output Resistance versus Frequency

PACKAGE DIMENSIONS

A
U NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
M Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1 INCHES MILLIMETERS
M
Q 4
DIM MIN MAX MIN MAX
A 0.960 0.990 24.39 25.14
B 0.465 0.510 11.82 12.95
R B C 0.229 0.275 5.82 6.98
D 0.216 0.235 5.49 5.96
E 0.084 0.110 2.14 2.79
H 0.144 0.178 3.66 4.52
2 3 J 0.003 0.007 0.08 0.17
K 0.435 ––– 11.05 –––
D M 45 _NOM 45 _NOM
K Q 0.115 0.130 2.93 3.30
R 0.246 0.255 6.25 6.47
U 0.720 0.730 18.29 18.54
J
STYLE 1:
C PIN 1. EMITTER
H E 2. BASE
SEATING 3. EMITTER
PLANE
4. COLLECTOR

CASE 211–11
ISSUE N

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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*MRF421/D*
MRF421 ◊ MRF421/D
MOTOROLA RF DEVICE DATA
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