SID40N03

36A, 30V,RDS(ON)21mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

TO-251
Description
2.3±0.1
6.6±0.2
The SID40N03 provide the designer with the best combination 5.3±0.2 0.5±0.05

of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.
7.0±0.2
The TO-251 is universally preferred for all commercial-industrial 5.6±0.2

surface mount applications and suited for low voltage applications

such as DC/DC converters. 1.2±0.3
0.75±0.15

7.0±0.2
Features
* Repetitive Avalanche Rated 0.6±0.1 0.5±0.1
* Dynamic dv/dt Rating 2.3REF.
* Simple Drive Requirement G D S

* Fast Switching
Dimensions in millimeters

Marking Code: 40N03

G
XXXX(Date Code)

Absolute Maximum Ratings

Parameter Symbol Ratings Unit
Drain-Source Voltage VDS 30 V

Gate-Source Voltage VGS ± 20 V

o
Continuous Drain Current,VGS@10V ID@TC=25 C 36 A
o
Continuous Drain Current,VGS@10V ID@TC=100C 25 A
1
Pulsed Drain Current IDM 150 A
Total Power Dissipation PD@TC=25 C
o
50 W
o
Linear Derating Factor 0.4 W/ C
o
Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C

Thermal Data
Parameter Symbol Ratings Unit
o
Thermal Resistance Junction-case Max. Rthj-c 2.5 C /W

Thermal Resistance Junction-ambient Max. Rthj-a 110 o

C /W

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01-Jun-2002 Rev. A Page 1 of 5

 SID40N03
36A, 30V,RDS(ON)21mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET

o
Electrical Characteristics( Tj=25 C Unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Condition

30 _ _ V
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA

Breakdown Voltage Temp. Coefficient _ _ o

V/ C
o
Reference to 25 C, ID=1mA
BVDS/ Tj 0.037

Gate Threshold Voltage VGS(th) _ V

1.0 3.0 VDS=VGS, ID=250uA

_ _ ±100 VGS=±20V
Gate-Source Leakage Current IGSS nA

o
_ _
Drain-Source Leakage Current (Tj=25 C ) 25 uA VDS=30V,VGS=0
IDSS
o
Drain-Source Leakage Current(Tj=150C) _ _ uA VDS=24V,VGS=0
250
_
18 21 VGS=10V, ID=18A
Static Drain-Source On-Resistance RD S (O N ) mΩ
_ 24 30 VGS=4.5V, ID=14A

_
Total Gate Charge2 Qg 17 _
ID=18A
Gate-Source Charge Qgs _ _ nC VDS=24V
3
VGS= 5V
Gate-Drain ("Miller") Charge _ _
Qgd 10
_ _
Turn-on Delay Time2 Td(ON) 7.2 VDD=15V
_ _ ID=18A
Rise Time Tr 60
nS VGS=10V
Td(Off) _ _ RG=3.3Ω
Turn-off Delay Time 22.5
RD=0.83Ω
Fall Time Tf _ _
10
_ _
Input Capacitance Ciss 800
VGS=0V
_ _ VDS=25V
Output Capacitance Coss 380 pF
f=1.0MHz
Crss _ _
Reverse Transfer Capacitance 133

Forward Transconductance Gfs _ 26 _ S VDS=10V, ID=18A

Source-Drain Diode
Parameter Symbol Min. Typ. Max. Unit Test Condition

VSD _ _ o
Forward On Voltage 2 1.3 V IS=36 A, VGS=0V.Tj=25C

IS _ _
Continuous Source Current(Body Diode) 36 A VD=VG=0V,VS=1.3 V

Pulsed Source Current(Body Diode)

1 _ _ 150
ISM A

Notes: 1.Pulse width limited by safe operating area.

2. Pulse width≦300us, dutycycle≦2%.

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01-Jun-2002 Rev. A Page 2 of 5

 SID40N03
36A, 30V,RDS(ON)21mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET

Characteristics Curve

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Maximum Drain Current

v.s. Case Temperature Fig 6. Type Power Dissipation
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01-Jun-2002 Rev. A Page 3 of 5

 SID40N03
36A, 30V,RDS(ON)21mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristics of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
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01-Jun-2002 Rev. A Page 4 of 5

 SID40N03
36A, 30V,RDS(ON)21mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET

Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform

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01-Jun-2002 Rev. A Page 5 of 5