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SEMICONDUCTOR TECHNICAL DATA by MBD701/D

 

   
Schottky Barrier Diodes
Motorola Preferred Devices

These devices are designed primarily for high–efficiency UHF and VHF detector 70 VOLTS
applications. They are readily adaptable to many other fast switching RF and digital HIGH–VOLTAGE
applications. They are supplied in an inexpensive plastic package for low–cost, SILICON HOT– CARRIER
high–volume consumer and industrial/commercial requirements. They are also DETECTOR AND SWITCHING
DIODES
available in a Surface Mount package.
• The Schottky Barrier Construction Provides Ultra–Stable Characteristics by
Eliminating the “Cat–Whisker” or “S–Bend” Contact
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ VR = 20 V
• High Reverse Voltage – to 70 Volts
1
• Low Reverse Leakage – 200 nA (Max) 2

CASE 182– 02, STYLE 1

(TO–226AC)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
MBD701 MMBD701LT1
2 1
Rating Symbol Value Unit CATHODE ANODE
Reverse Voltage VR 70 Volts
Forward Power Dissipation PF
@ TA = 25°C 280 200 mW
Derate above 25°C 2.8 2.0 mW/°C 3

Operating Junction TJ °C
Temperature Range – 55 to +125 1
2
Storage Temperature Range Tstg – 55 to +150 °C

DEVICE MARKING CASE 318 – 08, STYLE 8

SOT– 23 (TO – 236AB)
MMBD701LT1 = 5H

3 1
CATHODE ANODE

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 µAdc) V(BR)R 70 — — Volts
Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 CT — 0.5 1.0 pF
Minority Carrier Lifetime (IF = 5.0 mA, Krakauer Method) Figure 2 t — 15 — ps
Reverse Leakage (VR = 35 V) Figure 3 IR — 9.0 200 nAdc
Forward Voltage (IF = 1.0 mAdc) Figure 4 VF — 0.42 0.5 Vdc
Forward Voltage (IF = 10 mAdc) Figure 4 VF — 0.7 1.0 Vdc
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
   
TYPICAL ELECTRICAL CHARACTERISTICS

2.0 500
f = 1.0 MHz

t , MINORITY CARRIER LIFETIME (ps)

C T, TOTAL CAPACITANCE (pF)

1.6 400
KRAKAUER METHOD
1.2 300

0.8 200

0.4 100

0 0
0 5.0 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD CURRENT (mA)

Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime

10 100

TA = 100°C IF, FORWARD CURRENT (mA)

IR, REVERSE LEAKAGE (m A)

1.0
10
TA = 85°C TA = – 40°C
TA = 75°C
0.1

1.0
0.01 TA = 25°C
TA = 25°C

0.001 0.1
0 10 20 30 40 50 0 0.2 0.4 0.8 1.2 1.6 2.0
VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)

Figure 3. Reverse Leakage Figure 4. Forward Voltage

IF(PEAK) CAPACITIVE
CONDUCTION

IR(PEAK)

FORWARD STORAGE
CONDUCTION CONDUCTION

SINUSOIDAL BALLAST SAMPLING

NETWORK PADS OSCILLOSCOPE
(50 W INPUT)
GENERATOR
(PADS)
DUT

Figure 5. Krakauer Method of Measuring Lifetime

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

   
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total interface between the board and the package. With the
design. The footprint for the semiconductor packages must correct pad geometry, the packages will self align when
be the correct size to insure proper solder connection subjected to a solder reflow process.

0.037
0.037 0.95
0.95

0.079
2.0

0.035
0.9

0.031 inches
0.8 mm

SOT–23

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of the SOLDERING PRECAUTIONS
drain pad size. This can vary from the minimum pad size for
The melting temperature of solder is higher than the rated
soldering to a pad size given for maximum power dissipation.
temperature of the device. When the entire device is heated
Power dissipation for a surface mount device is determined
to a high temperature, failure to complete soldering within a
by T J(max), the maximum rated junction temperature of the
short time could result in device failure. Therefore, the
die, RθJA, the thermal resistance from the device junction to following items should always be observed in order to
ambient, and the operating temperature, TA . Using the minimize the thermal stress to which the devices are
values provided on the data sheet for the SOT–23 package, subjected.
PD can be calculated as follows: • Always preheat the device.
• The delta temperature between the preheat and
TJ(max) – TA
PD = soldering should be 100°C or less.*
RθJA • When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
The values for the equation are found in the maximum temperature ratings as shown on the data sheet. When
ratings table on the data sheet. Substituting these values into using infrared heating with the reflow soldering method,
the equation for an ambient temperature TA of 25°C, one can the difference shall be a maximum of 10°C.
calculate the power dissipation of the device which in this • The soldering temperature and time shall not exceed
case is 200 milliwatts for the SOT–23 package. 260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
150°C – 25°C temperature gradient shall be 5°C or less.
PD = = 200 milliwatts
625°C/W • After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
The 556°C/W for the SOT–23 package assumes the use Gradual cooling should be used as the use of forced
of the recommended footprint on a glass epoxy printed circuit cooling will increase the temperature gradient and result
board to achieve a power dissipation of 225 milliwatts. There in latent failure due to mechanical stress.
are other alternatives to achieving higher power dissipation • Mechanical stress or shock should not be applied during
from the SOT–23 package. Another alternative would be to cooling.
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal * Soldering a device without preheating can cause excessive
Clad, an aluminum core board, the power dissipation can be thermal shock and stress which can result in damage to the
doubled using the same footprint. device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

  
PACKAGE DIMENSIONS

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
B
Y14.5M, 1982.

ÉÉ
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.

ÉÉ
SEATING
R 4. DIMENSION F APPLIES BETWEEN P AND L.
PLANE DIMENSIONS D AND J APPLY BETWEEN L AND K

ÉÉ
MINIMUM. LEAD DIMENSION IS
D UNCONTROLLED IN P AND BEYOND DIM K
L

ÉÉ
P F
MINIMUM.

K J
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.21
B 0.170 0.210 4.32 5.33

X X SECTION X–X C 0.125 0.165 3.18 4.49

D 0.016 0.022 0.41 0.56
D F 0.016 0.019 0.407 0.482
G G 0.050 BSC 1.27 BSC
H 0.100 BSC 3.54 BSC
H J 0.014 0.016 0.36 0.41
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
V N 0.080 0.105 2.03 2.66
C
P ––– 0.050 ––– 1.27
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––
1 2 N
STYLE 1:
N PIN 1. ANODE
CASE 182–02 2. CATHODE
(T0–226AC)
ISSUE H

NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
L Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
3 FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
B S MATERIAL.
1 2

INCHES MILLIMETERS
V G DIM MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0180 0.0236 0.45 0.60
L 0.0350 0.0401 0.89 1.02
C
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60
D H J
K STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE

CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

   

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

  

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6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

*MBD701/D*
◊ MBD701/D