BJT Transistor Modelling: Prepared By: Engr. Mark S. Cañete

BJT Transistor Modelling
Prepared by:
Engr. Mark S. Cañete
BJT Transistor Modelling
AC Equivalent Models
 AC equivalent models can be obtained by:
 Setting all DC sources to zero and replacing

them by a short- circuit equivalent
 Replacing all capacitors by short-circuit
equivalent
Removing all elements bypassed by the short
–circuit equivalents introduced by step 1 and
2.
Redraw the network in a more convenient
and logical form
AC equivalent Models
 Example:
AC equivalent Models
AC Equivalent Models
Note: R12 is the parallel combination of R1 and R2

Important Parameters in AC analysis
•I •Io
i
•Zi •Two port •Zo

•Vi •Vo
System
Input Impedance
 For the input Side, the input impedance is
define as:
Vi
Zi 
Ii
Note:
For small signal analysis, once the input impedance has been
determined the same numerical value can be used for changing
levels of applied signal. It is purely resistive in nature and depending
on the manner in which the transistor is employed. An ohmmeter
cannot be used to measure the small signal ac input impedance
since it is in the DC mode.
Input Impedance
 Considering the source resistance
Rs Ii
Zi
Vi Two port System
Vs
Input Impedance
Vs Vi
Ii 
Rsource
Input Impedance
 Example1:
 Using two port system, solve for the input
impedance given the following values:
R s  1k 
V s  2 mV
V i  1 . 2 mV
Output Impedance
 The output impedance of a BJT transistor

amplifier is resistive in nature and depending
on the configuration and the placement of
the resistive element Zo can varyfrom a few
ohms that can be exceed 2Mohm.
Vo
Zo 
Io
Voltage Gain
 One of the most important
characteristic of an amplifier is the small
signal ac voltage gain.
V0
AV 
Vi
 For no load voltage gain:
Vo
AVNL 
Vi RL   ( opencircui t )
No load Voltage Gain
•Ii
Rs •Zi
•Vi •AVNL •Vo

Vs
Voltage Gain
V0 Zi
AVs   AVNL
Vi Zi  Rs
Voltage Gain Example2
• For the BJT Amplifier, Rs = 1.2K
and Vs = 40mV, AVNL=320
determine:
Ii
a. Vi
Rs
b. Ii Zi
Vi AVNL Vo=7.68 V
Vs
c. Zi
d. Avs
Current Gain
I0 Vo
Ai  Io 
Ii RL
Zi
Ai  Av
RL
Re Transistor Model
• Re model employs a diode and controlled
current source to duplicate the behavior of a
transistor in the region of interest
Re Transistor model
• Common Base NPN Configuration
Figure 1. Common Base Configuration Figure 2. re Equivalent model
Figure 3. Common Base re Equivalent circuit

Re Transistor Model
• Common Base PNP Configuration
Figure 1. Common Base Configuration Figure 2. re Equivalent model
Figure 3. Common Base re Equivalent circuit

Re Transistor Model
• Useful Equation in common based
configuration
re is the Ac resistance of the emitter
26mV diode. It is important because it
re  determines the voltage gain.
IE
Z i  re CB For common base configuration,

typical values of Zi ranges from a
few ohms to a maximum of about 50

Zo   CB For common base configuration,
typical values of Zo are in the
megaohm range
For CB typical input impedance is relatively low and output Z quite high
Re Transistor Model
Common Base Voltage gain
RL RL
AV  
re re
Common Base Current
gain
Ai    1
Example3
 For a common base configuration of figure below
with IE = 4 mA,  = 0.98, and an AC signal of 2 mV
applied between the base and emitter terminals:
a. Determine the input impedance
b. Calculate the voltage gain if a load of 0.56 k is
connected to the output terminals
c. Find the output impedance and current gain
Re Transistor Model
• Common emitter Configuration
Ic = Ib
Figure 1. Common Emitter Configuration Figure 2. re Configuration
IE  Ib
Figure 3. re equivalent Figure 4. re model for CE configuration

Re Transistor Model
Collector Current and Emitter current
I c   I b
I e  I b
Input Impedance Output Impedance
Zi  re
For CE
Z0  r0 configuration,
typical values of Zo
Voltage Gain
are in the range of
40 to 50 k
Current Gain
 RL
Av 
re CE,r0  Ai  
example4
 Given = 120 and IE = 3.2 mA for a
common emitter configuration with ro =

a. Zi
b. Av if the load of 2 K  is applied
c. Ai with the 2 K  load.

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BJT Transistor Modelling

 Setting all DC sources to zero and replacing

Note: R12 is the parallel combination of R1 and R2

•Zi •Two port •Zo

 The output impedance of a BJT transistor

•Vi •AVNL •Vo

Figure 1. Common Base Configuration Figure 2. re Equivalent model

Figure 3. Common Base re Equivalent circuit

Figure 1. Common Base Configuration Figure 2. re Equivalent model

Figure 3. Common Base re Equivalent circuit

Z i  re CB For common base configuration,

Figure 1. Common Emitter Configuration Figure 2. re Configuration

Figure 3. re equivalent Figure 4. re model for CE configuration

Input Impedance Output Impedance

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