EDC Lab 4

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Electronic Devices and Circuits

(EL-1004)
LABORATORY MANUAL
FALL 2023

(LAB # 04)
Analysis and Implementation of Practical Circuits
containing Diodes

Student Name: Muhammad Ahmed Khan, Zain Khalid

Roll No: 22i-2200 ,22i-2161 Section: A

Date performed: _____________________, 2023

Manual Submission Date: ______________, 2023

_______________________________
LAB ENGINEER SIGNATURE & DATE MARKS
AWARDED: /10
NATIONAL
____________________________________________________________________________________________________________________________

UNIVERSITY OF COMPUTER AND EMERGING SCIENCES, ISLAMABAD__________________________


Prepared by: Engr. Kashif Ullah Version: 2.14
Last Edited by: Engr. Kashif Ullah Updated: Fall 2023
Verified by: Dr. Awais Ayub
Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________

LAB: 04 Analysis and Implementation of Practical Circuits


containing Diodes
Objectives:
 To analyze practical diode circuits.
To construct practical diode circuits on breadboard.
 To analyze theoritical and practical results of diode circuits.
Equipment required:
 DC power supply (variable)
 Multi-meter (DMM)
 Resistor 1kohm
 IN 4007 (diode)  Bread Board Theory:
A diode is an electrical device allowing current to move through it in one direction with far
greater ease than in the other. The most common kind of diode in modern circuit design is the
semiconductor diode, although other diode technologies exist.
When placed in a simple battery circuit, the diode will either allow or prevent current through
the it, depending on the polarity of the applied voltage.
Forward Bias:
When the positive terminal of the battery is connected to the P-side and the negative terminal
is connected to the N-side of the diode, then the diode is in the forward bias. In forward bias
the diode does not conduct until the breakdown occurs. At a certain voltage the majority carriers
get sufficient energy to pass the junction. This voltage is called breakdown voltage and if the
applied voltage is increased beyond the voltage, a large current flows through the diode. In the
reverse bias the breakdown occurs at high voltages.
Reverse Bias:
When the positive terminal of the battery is connected to the n-side and negative terminal is
connected to the p-side, then the diode is in reverse bias. In this condition the diode does not
conduct and there is no current due to majority carriers, because the depletion layer widens
with the reverse bias. The positive ions in the n-side is repel by the positive terminal and the
negative ions in the P-side are repel by the negative terminal of the battery, so the depletion
region widens.
In reverse bias, there is reverse saturation current due to the minority carriers which is very
small. The minority carriers that found themselves in the depletion region passes it and thus a
small reverse saturation current denoted by ‘Is’ flows in the reverse direction.
The diode is a device formed from a junction of n-type and p-type semiconductor material. The
I-V characteristic curve of diode is shown below.

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________
Fig-3.1: Characteristic
Curve of PN-junction
diode

The lead connected to


the p-type material is
called anode and the
lead connected to ntype
material is called
cathode. In general, the
cathode of a diode is
marked by a solid line
on diode.

Fig-3.2: Leads Indication and symbol of diode

When analyzing circuits, the real diode is usually replaced with a simple model. In the simplest
form, the diode is modeled by a switch (shown in figure).the switch is closed when the diode
is forward biased and open when the diode is reversed biased.

Fig-3.4: Model of diode

Testing a diode:

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________
Digital multimeters can test diodes using one of two methods:
1. Diode Test mode: almost always the best approach.
2. Resistance mode: typically used only if a multimeter is not equipped with a Diode Test
mode. Note: In some cases it may be necessary to remove one end of the diode from the
circuit in order to test the diode.
1. Diode Test mode:
A diode is best tested by measuring the voltage drop across the diode when it is
forwardbiased. A forward-biased diode acts as a closed switch, permitting current to
flow. A multimeter’s Diode Test mode produces a small voltage between test leads.
The multimeter then displays the voltage drop when the test leads are connected across
a diode when forward-biased. The Diode Test procedure is conducted as follows:
i. Make certain a) all power to the circuit is OFF and b) no voltage exists at the diode.
Voltage may be present in the circuit due to charged capacitors. If so, the capacitors
need to be discharged. Set the multimeter to measure ac or dc voltage as required.
ii. Turn the dial (rotary switch) to Diode Test mode ( ) It may share a space on
the dial with another function.
iii. Connect the test leads to the diode. Record the measurement displayed.
iv. Reverse the test leads. Record the measurement displayed. Diode Test Analysis:
i. A good forward-based diode displays a voltage drop ranging from 0.5 to 0.8 volts for the
most commonly used silicon diodes. Some germanium diodes have a voltage drop
ranging from 0.2 to 0.3 V.
ii. The multime ter displays OL when a good diode is reverse-biased. The OL reading
indicates the diode is functioning as an open switch.
iii. A bad (opened) diode does not allow current to flow in either direction. A multimeter
will display OL in both directions when the diode is opened.
iv. A shorted diode has the same voltage drop reading (approximately 0.4V) in both
directions

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________
Fig 3.5: Diode test mode
2. Resistance Test mode: A multimeter set to the Resistance mode (Ω) can be used as an
additional diode test or, as mentioned previously, if a multimeter does not include the
Diode Test mode.
i. The forward-biased resistance of a good diode should range from 1000 Ω to 10
MΩ. The resistance measurement is high when the diode is forwardbiased because
current from the multimeter flows through the diode, causing the high-resistance
measurement required for testing.
ii. The reverse-biased resistance of a good diode displays OL on a multimeter.
The diode is bad if readings are the same in both directions. Things
to know about the Resistance mode when testing diodes:
i. Does not always indicate whether a diode is good or bad. ii. Should not be taken when
a diode is connected in a circuit since it can produce a false reading.
iii. Can be used to verify a diode is bad in a specific
application after a Diode Test indicates a diode is bad.
Precautions:
 Do not use current meter in parallel.
 Always break the circuit while measuring current.
 Do not use volt meter in series.
 Before applying to the circuit measured the voltages of
source.
LAB TASKS
Task 1:
Connect the diode in the forward and reverse biased configurations in diode test mode(Fig 3.5).
Note the voltages and check whether the diode is faulty one or not. a)
Voltage of diode in forward biased configuration: 0.532L .
b) Voltage of diode in reverse biased configuration: 0L .
Connect the diode in the forward and reverse biased configurations in resistance test mode.
Note the resistances and check whether the diode is faulty one or not. a)
Resistance of diode in forward biased configuration: 0.67M ohm .
b) Resistance of diode in reverse biased configuration: 0L .
Task 2:

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


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_________________________________________________________________________________
Construct the circuits as shown below and measure output currents and volatges. Compare
Theoritical and Practical results. (a) Calculations:

With Diode With LED (Status: ON / OFF ?)

Vin (V) V (V) I (mA) V (V) I (mA)

5V 0.57 1.65 1.844 ON 1.20

Practical Results:

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________
(b) Calculations:

With LED (Status: ON / OFF


With Diode
?)With LED Practical
Results:
Vin (V) V (V) I (mA) V (V) I(mA)

5V 5.06 0.0 1.88 OFF 0.0

(c)Calculations:

Practical Results:
With LED (Status: ON / OFF
With Diode
?)

Vin (V) V (V) I (mA) V (V) I (mA)

5V 5.07 0.00 1.88 ON 0.00

(d) Calculations:

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________

Practical Results:
With LED x(Status: ON /
With Diode
OFF ?)

Vin (V) V (V) I (mA) V (V) I (mA)

5V 0.6 1.7 1.838OFF 0

Task 3:
Construct the circuits as shown below and measure output currents and volatges.
Compare Theoritical and Practical results.
i.

Practical Results:
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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________

Vin(V) V (V) I (mA) ID2 (mA)

± 5V 0.052 0.45 0.44

± 10V 0.046 0.99 0.99


Calculations:
(a) Vin = ± 10V

PICTURE PASTE AT THE END OF TASK 4

(b) Vin = ± 5V

PICTURE PASTE AT THE END OF TASK 4

ii.

Practical Results:

Vin(V) V (V) I (mA) ID2 (mA)

± 5V 1.90 0.044 0.67

± 10V 3.354 0.012 1.36

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________
Calculations:
(a) Vin = ± 10V

PICTURE PASTE AT THE END OF TASK 4

(b) Vin = ± 5V

PICTURE PASTE AT THE END OF TASK 4

Task 4:
Lets connect three diodes in parallel combinations as shown below and apply three
different volatges. First how they will behave, how many of these diode will be in forward
biased conditions. Show your observations and then prove them with practical results. (a)
Observations:
+ 5V
In this case 5V diode is forward biased
+ 3V
3V and 2V diodes are reverse biased which means
they are off. +2V

Practical Results:
Output

V (V) I (mA)

4.57 4.26

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________
(b) Observations:

V= 3.1V.

There is high voltage at the anode reigon.

So, we can conclude that 2V diode is forward biased


which means it is ON.

While remaning diodes are reverse biased which states


that they are off.

+ 5V
Practical Results:
+ 3V
Output

V (V) I (mA) +2V


3.1 2.62

TASK 3 CALCULATIONS:
(a) Vin = ± 10V

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________
(a) Vin = ± 5V

TASK 3 (ii) CALCULATIONS:


(a) Vin = ± 10V

(a) Vin = ± 5V

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________

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& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________

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Electronic Devices National University Roll No: __________

& Circuits of Computer and Emerging Sciences 04


(EL-1004) Islamabad
_________________________________________________________________________________

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